TECHNICAL SEMINAR REPORT ON

PRIMARY MEMORY
submitted in the partial fulfillment of the academic requirements
For the award of the Degree of
BACHELOR OF TECHNOLOGY
in
ELECTRONICS AND COMMUNICATION ENGINEERING
By
PORTHI VAISHNAVI (18B61A04A6)
 Department of Electronics and Communication Engineering

NALLA MALLA REDDY ENGINEERIG COLLEGE

Autonomous Institution
(Accredited by NACC with ‘A’ Grade , NBA Accredited , Affiliated to Jawaharlal Nehru Technological University , Hyderabad)

Divyanagar, KachivaniSingaramPost , Ghatkesar(M) , Medchal(Dist)-500088 2018-2022

Submitted By :
Porthi Vaishnavi
18B61A04A6
 TABLE OF CONTENTS :
• Abstract
• Introduction
• Classification of primary memory
• Brief introduction to ROM
• Types of ROM
• Brief introduction to RAM
• Types of RAM
• Working principles of SRAM and DRAM
• Memory comparsion
• Applications
• Conclusion
ABSTRACT:
Now-a-days , memories are included in various electronic gadgets to access
the running execution faster . Primary memory is physically closer to the
processor and it provides fast access to the CPU.
. The purpose of this report is to explain the different types of primary
memory.
.This report helps in understanding the operations and working principles
of RAM , ROM and their types.
.The main aim of this report is to understand the accessing of memories.

INTRODUCTION :
• What is primary memory ?
• It is also called as system memory
• It is essential for computer to operate
• It stores data and commands to be used by the CPU.
• It stores basic system settings.
• It consists of two types of memories. They are
>>SRAM
>>DRAM
5
BODY :
• Classification of primary memory is as follows :
READ ONLY MEMORY (ROM)
INTRODUCTION:
• ROM is a program or code storage memory which is used to store the
instructions of the program.
• It is also referred as a non-volatile memory as it does not losses the
data , even when the power is turned off . Hence, by using ROM’S ,
permanent storage of data can be achieved.
• ROM cell can be configured using only one transistor for storing one
storage bit.
• Types of ROM includes : MROM , PROM , EPROM , EEPROM and
FLASH memory.
READ ONLY MEMORY (ROM) :

• ROM consists of single transistor which is

grounded by means of a switch . Hence , the value
 of transistor switches to zero when the switch is closed otherwise the
value of transistor is said to be one.
*When word line is made high and if the switch of the transistor is closed ,
a value of “0” flows out of the circuit.
**No write operation is possible with ROM’S , since data is added only
during the manufacturing.
MASKED ROM (MROM) :
• Masked ROM is one time programmable device which stores data
using hardwired technology.
• It is manufactured using metallization and masking based on end user
specifications.
• It is a low-cost device with high volume of production.
• It cannot be modified or reprogrammed as it permanently stores the
bit information.

PROGRAMMABLE ROM (PROM) :

• It is also a one-time programmable memory by the end user which is
used to store the programs.
• This memory consists a matrix of nichrome or polysilicon wires acting
as fuses.
• According to the pattern , the fuses are made to burn selectively.
• The default state is logic one which represents the fuse is not burned.
• Logic 0 represents the fuse which is burnt or blown out.

ERASABLE PROGRAMABLE ROM (EPROM) :

• EPROM facilitates data erasing and writing as many times as possible.
• The bit information is stored in the EPROM by using a EPROM
programmer which charge the floating gate of FET using the applied
high voltage.
• The stored information can be erased by exposing the stored
information to UV-rays for about 20-30 minutes.
• Therefore , it supports reprogramming and it is a time consuming
process.
ELECTRICALLY ERASABLE PROGRAMMABLE ROM (EEPROM) :

• EEPROM is flexible to erase and operate and reprogram the data.

• It uses electrical signals at the register or byte level , to store or
change the information.
• The data can be erased in milliseconds by using EEPROM.
• The drawback is it has less capacity than the standard ROM.
 FLASH MEMORY:
• It combines the technology reprogram-ability of EPROM and the high
capacity of standard ROM’S.
• It stores the data in an array of floating gas transistors arranged in
blocks.
• The memory can be easily erased without affecting other sectors or
pages.
 RANDOM ACCESS MEMORY(RAM) :
• RAM is a data memory which involves reading from or writing data to
it.
• It is a volatile memory as it does not store the data , if the power is
turned off.
• RAM is a direct access memory as the required memory location can
be directly obtained without searching the entire memory.
• Types of RAM includes : SRAM and DRAM
 INTRODUCTION TO SRAM :
• SRAM stores the data in the form of voltage.
• These are mainly made up of flipflops.
• SRAM cell is basically made up of 6 transistors in which 4 of them are
used for building the latch part of the memory cell and the remaining
2 for accessing the transistors.
• SRAM is the fastest form of RAM available.
CIRCUIT DIAGRAM OF STATIC RAM
 DYNAMIC RAM INTRODUCTION AND CIRCUIT DIAGRAM :
• DRAM stores the data in the form of charge.
• It consists of a transistor and a capacitor but data in the capacitor
cannot be stored for a long time as capacitor does not hold the data
for a long time.
• DRAM requires a periodic refreshing of the stored data.
• Access devices or switches are used for RD/WR operations.
 READ AND WRITE OPERATIONS:
READ operation :

• Pre-charge bit-line to Vdd/2.

• Activate word line i.e. WR=1
• Capacitor and bit-line shares the charge.
>>If capacitor is discharged , bit-line voltage decreases slightly i.e. the output of sense-amplifier will be
0.
>> If capacitor is charged , bit-line voltage increases slightly i.e. the output of sense-amplifier will be 1.
**Refreshing of the circuit after read operation is required as the capacitor cannot hold the data for a long
time.
WRITE OPERATION :
.Here , bit-line acts as input.
. Activate word-line i.e. WR=1.
.Drive bit-line to ground or vdd which charges and discharges the capacitor.
.when bit line is driven to vdd the capacitor charges and the output of sense amplifier is said to be one.
.when bit-line is driven to ground the capacitor discharges and the output of sense amplifier is said to be 0.
.Thus , we can write into the memory.

MEMORY COMPARISON
SRAM DRAM
• Larger cell = lower density ,
higher cost/bit.
• No refresh is required.
• Faster access
• Smaller cell=higher
density , lower cost/bit.
• Needs periodic refresh and
refresh after read
• Longer access time

APPLICATIONS :
• Primary memories are included in
• >>computers
• >>digital cameras
• >>cell phones
• >>electronic musical instruments
• >>GPS and etc…

CONCLUSION :
• Primary memory stores the data and commands which are used by
the CPU.
• Primary memories are not only used in the computers . But in
most other electronic items as well.
• It is available in limited size and accessing of data is much faster
when compared to secondary memory.
REFERENCES :
Wikipedia[online]:http://en.Wikipedia.org/wiki/primary memory
VLSI Text book by Lal Kishore