BECT Semiconductor Devices Circuits 211208 193735

Module 2
⮚ Semiconductor Basics
⮚ Diodes
⮚ BJT & FET
10/12/2021
• The basic properties of semiconductors and, in
particular, Silicon (Si) – the material used to
make most modern electronic circuits
• How doping a pure silicon crystal dramatically

changes its electrical conductivity – the
fundamental idea in underlying the use of
semiconductors in the implementation of
electronic devices
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• The two mechanisms by which current flows in
semiconductors – drift and diffusion charge
carriers.
• The structure and operation of the pn junction

– a basic semiconductor structure that
implements the diode and plays a dominant
role in semiconductors.
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Intrinsic Semiconductors
▪ Semiconductor – a material whose conductivity lies between
that of conductors (copper) and insulators (glass).
▪ Single-element – such as Germanium (Ge) and Silicon (Si).
▪ Compound – such as Gallium-Arsenide (GaAs).
Single-element crystal Compound crystal
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▪ What does a Semiconductor look like?
▪ Where is it used? SiO2 under SEM (Scanning
Raw Silicon Si wafer Electron Microscope)
Procesed Wafer
and
Electronics
Components
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• Valence electron – is an electron
that participates in the formation of valence
chemical bonds. electron
• Lies in the outermost electron
shell of an element
• The number of valence
electrons that an atom has
determines the kinds of
chemical bonds that it can form.
• Covalent bond – is a form of
chemical bond in which two atoms
share a pair of electrons
• By sharing their outer most covalent
(valence) electrons, atoms can bond
fill up their outer electron shell
and gain stability
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Why use Si?
• Cheap and abundant
• Thermally stable
• SiO2 is strong dielectric
Si atom
• Has four valence electrons
(Carbon group or group IV)
• Requires four more to
complete outermost shell Two-dimensional representation of the silicon
• Each pair of shared forms a

crystal. The circles represent the inner core of
silicon atoms, with +4 indicating its positive charge
covalent bond of +4q, which is neutralized by the charge of the
four valence electrons. Observe how the covalent
bonds are formed by sharing of the valence
electrons. At 0K, all bonds are intact and no free
electrons are available for current conduction.
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Silicon at low temp
• all covalent bonds – are intact
• no electrons – are available for
conduction
• conductivity – is zero
Silicon at room temp
• some covalent bonds – break, freeing
an electron and creating hole, due to
thermal energy
• some electrons – will wander from
their parent atoms, becoming available
for conduction
• conductivity – is greater than zero
The process of freeing electrons, creating holes, and filling
them facilitates current flow…
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3.1: Intrinsic
At room temperature, some of the covalent bonds are broken by
thermal generation. Each broken bond gives rise to a free
Semiconductors
electron and a hole, both of which become available for current
conduction.
• silicon at low temps: • silicon at room temp:

• all covalent bonds are • sufficient thermal energy
intact exists to break some
• no electrons are available covalent bonds, freeing an
for conduction electron and creating hole
the processisofzero
• conductivity freeing • a freecreating
electrons, electron may holes,
wander
from its parent atom
and filling them facilitates current flow
• a hole will attract
neighboring electrons
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• Intrinsic semiconductor – is one which is not doped
• One example is pure silicon.
• Generation – is the process of free electrons and holes being
created.
• generation rate – is speed with which this occurs.
• Recombination – is the process of free electrons and holes
disappearing.
• recombination rate – is speed with which this occurs
• Thermal generation – effects a equal concentration of free
electrons and holes: electrons move randomly throughout the
material.
• In thermal equilibrium, generation and recombination rates are
equal.
1) Generation can be effected by thermal energy (heat)
2) Both generation and recombination rates are functions of
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Insulator, Semiconductors,Conductors
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• Q: Why can thermal generation not be used to effect
meaningful current conduction?
• A: Silicon crystal structure described previously is not
sufficiently conductive at room temperature.
• Additionally, a dependence on temperature is not
desirable.
• Q: How can this “problem” be fixed?
• A: doping
Doping – is the intentional introduction of impurities

into an extremely pure (intrinsic) semiconductor for
changing carrier concentrations.
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Doped Semiconductors
• p-type semiconductor • n-type semiconductor
• doped with trivalent • doped with pentavalent
impurity atom (e.g. impurity atom (e.g.
Boron) Phosphorus)
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• Silicon is doped with element • Silicon is doped with element
having a valence of 3. having a valence of 5.
• To increase the concentration • To increase the concentration of
of holes (p). free electrons (n).
• One example is boron, which is • One example is phosphorus,
an acceptor. which is a donor.
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Law of Electrical Neutrality
• Positive charge density must equal that of Negative
concentration as semiconductor is electrically neutral.
Law of Electrical Neutrality

Semiconductor is electrically Neutral
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• p-type doped semiconductor
• Concentration of acceptor atoms is NA
• If NA is much greater than ni …
• Then the concentration of holes in the p-type is
defined as below.
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• n-type doped semiconductor
• Concentration of donor atoms is ND
• If ND is much greater than ni …
• Then the concentration of electrons in the n-type is
defined as below.
Important: now the number of free electrons (aka.

conductivity) is dependent on doping concentration, not
temperature…
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Doped
Semiconductors
▪ Free electrons in p-type ▪ Holes in n-type
semiconductor semiconductor
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• np will have the same • pn will have the same
dependence on dependence on
temperature as n 2
temperature as ni2 i
• the concentration of • the concentration of

holes (pp) will be much free electrons (nn) will
larger than electrons be much larger than
• holes are the majority holes
charge carriers
• free electrons are the • electrons are the
minority charge carriers majority charge carriers
• holes are the minority
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charge carriers 19
• p-type or n-type semiconductor
• is electrically neutral by itself (as standalone unit)
• charge of majority carriers (holes in p-type and
electrons in n-type) is neutralized by the bound
charges associated with impurity atoms
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Current Flow in Semiconductors
• Summary
• Holes (absence of electrons, p) and free electrons (n):
• p-type semiconductor: holes are majority carriers ( pp
), free electrons (np) are minority carriers
• n-type semiconductor: free electrons are majority
carriers (nn), holes are minority carriers ( pn )
• Two distinct mechanisms for current flow (movement of

charge carriers)
• Drift Current (IS)
• Diffusion Current (ID)
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Drift Current
• Q: What happens when an electrical field (E) is applied to
a semiconductor crystal?
• A: Holes are accelerated in the direction of E, free
electrons are repelled.
• Q: How is the velocity of these holes defined?
Electrons
move faster
than holes!
.E (V/ cm), μp (cm2/Vs) = 400 for doped Si,.μn (cm2/Vs) = 1110 for
doped Si
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Drift Current (IS)
• Assume that, for the single-crystal silicon bar on previous
slide, the concentration of holes is defined as p and
electrons as n.
• Q: What is the current components attributed to the flow
of holes (Ip) and electrons (In)?
Ip In
IS = Ip+In
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Mobility
Holes have less mobility than free electrons
Why?
• Free electrons are loosely tied to the nucleus and are
closer to the conduction band
• Holes are absence of electrons in the covalent bond
between Si atoms and B
• Holes are locked or subjected to the stronger atomic force
pulled by the nucleus than the electrons residing in the
higher shells or farther shells
• So, holes have a lower mobility
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Diffusion Current (ID)
Example of Diffusion Process
▪ Inject holes – By some
unspecified process, one
injects holes in to the left
side of a silicon bar. inject
▪ Concentration profile arises holes diffusion occurs
– Because of this continuous
hole injection, a
concentration profile arises.
▪ Diffusion occurs – Because
of this concentration concentration
gradient, holes will flow profile arises
from left to right.
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Diffusion Current (ID)
• Carrier diffusion – is the flow of charge carriers from area of
high concentration to low concentration.
• It requires non-uniform distribution of carriers.
• Diffusion current – is the current flow that results from
diffusion.
• Current flow due to mobile charge diffusion is proportional to
the carrier concentration gradient.
• The proportionality constant is the diffusion constant.
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Drift Current (IS)
• Conductivity (σ.) – relates
current density (J=Is/A)
and electrical field (E)
• Resistivity (ρ.) – Inverse of
conductivity
1) Resistivity of the intrinsic silicon is reduced

significantly when it is doped .
2) Also, doping reduces carrier mobility
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Relationship Between D and μ.?
• Q: What is the relationship between diffusion constant (D) and
mobility (μ)?
• A: thermal voltage (VT)
• Q: What is this value?
• A: at T = 300K, VT = 25.9mV
Einstein’s Equation
Where, VT = kT
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Example : Resistivity of Intrinsic and Doped Semiconductor
Q(a): Find the resistivity of intrinsic silicon using following
values:
μn = 1350cm2/Vs, μp = 480cm2/Vs, ni = 1.5E10/cm3.
Q(b): Find the resistivity of p-type silicon with NA = 1016/cm2

and using the following values:
μn = 1110cm2/Vs, μp = 400cm2/Vs, ni = 1.5E10/cm3
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P-n Junction
One end of a silicon or germanium crystal can be doped as a p- type material and
the other end as an n-type material.
The result is a p-n junction.
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Depletion Region Formation
At the p-n junction, the excess
conduction-band electrons on
the n-type side are attracted to
the valence-band holes on the
p-type side.
The electrons in the n-type

material migrate across the
junction to the p-type
material (electron flow).
The result is the formation
of a depletion region
around the junction.
The electron migration

results in a negative charge
on the p-type side of the
junction and a positive
charge on the n-type side of
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Diode Operating Conditions
A diode has three operating
conditions:
• No bias
• Forward bias
• Reverse bias
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No Bias
• No external voltage is applied: VD =
0V
• No current is flowing: ID = 0 A
• Only a modest depletion region
exists
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Forward Bias
External voltage is applied across the p-n
junction in the same polarity as the p- and n-
type materials.
• The forward voltage causes

the depletion region to
narrow.
• The electrons and holes are
pushed toward the p-n
junction.
• The electrons and holes have
sufficient energy to cross the
p-n junction.
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Reverse Bias
External voltage is applied across the p-n
junction in the opposite polarity of the p- and
n-type materials.
• The reverse voltage causes

the depletion region to
widen.
• The electrons in the n-type
material are attracted toward
the positive terminal of the
voltage source.
• The holes in the p-type
material are attracted toward
the negative terminal of the
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voltage source.
Current flow in forward & Reverse direction
Conduction Region Non-Conduction Region
• The voltage across the diode is 0 • All of the voltage is across the
V diode
• The current is infinite • The current is 0 A
• The forward resistance is • The reverse resistance is
defined as RF = VF / IF defined as RR = VR / IR
• The diode acts like a short • The diode acts like open
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Current flow in forward & Reverse direction
The two modes of operation of ideal diodes and the use of an external circuit to limit
(a) the forward current and (b) the reverse voltage.

Diode Current Equation
Is is the saturation current ~10 -14

Vd is the diode voltage
n – emission coefficient (varies from 1 - 2 )
k = 1.38 × 10–23 J/K is Boltzmann’s constant
q = 1.60 × 10–19 C is the electrical charge of
an electron.
At a temperature of 300 K, we have
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Ideal diodes (Switch )
The diode is a 2-terminal device. A diode ideally conducts

in only one direction.
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Constant voltage diode model
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Diode Equivalent Circuit
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Actual Diode Characteristics
Note the regions for no

bias, reverse bias, and
forward bias conditions.
Carefully note the scale

for each of these
conditions.
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Temperature dependence of the diode forward characteristic
Temperature dependence of the diode forward characteristic. At a constant current, the
voltage drop decreases by approximately 2 mV for every 1°C increase in temperature.

Temperature Effects
• As temperature increases it adds energy to the diode.
• It reduces the required forward bias voltage for forward- bias conduction.
• It increases the amount of reverse current in the reverse- bias condition.
• It increases maximum reverse bias avalanche voltage.
Germanium diodes are more sensitive to temperature variations than silicon or gallium arsenide
diodes.
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Practice problems
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Diode Resistance
Static resistance of a diode is the ratio of obtained
voltage to the current applied across the diode.
However ,often the static resistance is not suitable in
many applications, as it varies significantly with the
applied voltage.Instead for small signal operations
dynamic or incremental resistance r is An important
parameter.
The dynamic resistance is defined by
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Series Diode Configurations
Forward Bias
Constants
• Silicon Diode: VD = 0.7 V
• Germanium Diode: VD = 0.3 V
Analysis (for silicon)

• VD = 0.7 V (or VD = E if E < 0.7
V)
• VR = E – VD
• ID = IR = IT = VR / R
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Parallel Configurations
solution:
Vd1 =Vd2 = .7
V(R)= E -Vd1 = 10 -.7 = 9.3
I1= (9.3/.33k ohm)

I1= 28.18 mamp.
Id1 =Id2= (28.18/2) = 14.09 mamp.
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QUESTION ON DIODE
Q1:- The following diagram has Si and Ge diode with cut in voltage .7V and .3V find the output
voltage and current through 10kohm resistance. Input voltage is 2V.
Q2:- Find out the output voltage of the fig.2 in which Si diodes are used with cut in voltage .7V. also
give comment on the states of diode. Input voltage is 2V.
52
fig2
Q3:-In the following fig.3 below if the resistance value is 1kohm and cut in voltage is .7V of each
diode then find the value of n for which the current through each diode is .01mA.
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Q4 :- Find the output voltage V0 of following ckt given input voltage are 4V and 6V..
Q5:-Find out the maximum and minimum value of output voltage. If input voltage 5sinwt.
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Q6:-Find out the Idc current and Vac voltage across diodes if our diodes are Si diode with cut in voltage .7V.
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Zener Diode
A Zener is a diode operated in reverse
bias at the Zener voltage (VZ).
Common Zener voltages are between 1.8

V and 200 V
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Zener Region
● The Zener region is in
the diode’s reverse-bias
region.
● At some point the reverse
bias voltage is so large the
diode breaks down and the
reverse current increases
dramatically.
● The maximum reverse voltage that
won’t take a diode into the zener
region is called the peak inverse
voltage or peak reverse voltage.
● The voltage that causes a diode to
enter the zener region of operation
is called the zener voltage (VZ).
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Breakdown Mechanism
• Zener breakdown
• Avalanche breakdown
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Breakdown mechanism
Zener Breakdown
• When we increase the reverse voltage across the p-n junction diode, the electric field across the diode
junction increases (both internal & external).
• This results in a force of attraction on the negatively charged electrons at junction. This force frees
electrons from its covalent bond and moves those free electrons to conduction band.
• When the electric field increases (with applied voltage), more and more electrons are freed from its
covalent bonds. This results in drifting of electrons across the junction and electron hole recombination
occurs. So a net current is developed and it increases rapidly with increase in electric field.
• Zener breakdown phenomena occurs in a p-n junction diode with heavy doping & thin junction (means
depletion layer width is very small).
• Zener breakdown does not result in damage of diode. Since current is only due to drifting of electrons,
there is a limit to the increase in current as well.
60
Breakdown mechanism
Avalanche Breakdown
• Avalanche breakdown occurs in a p-n junction diode which is moderately doped
and has a thick junction (means its depletion layer width is high).
• Avalanche breakdown usually occurs when we apply a high reverse voltage
across the diode (obviously higher than the zener breakdown voltage, say Vz). So
as we increase the applied reverse voltage, the electric field across junction will
keep increasing.
• If applied reverse voltage is Va and the depletion layer width is d; then the
generated electric field can be calculated as Ea =Va/d
• This generated electric field exerts a force on the electrons at junction and it
frees them from covalent bonds. These free electrons will gain acceleration and it
will start moving across the junction with high velocity. This results in collision
with other neighboring atoms. These collisions in high velocity will generate
further free electrons. These electrons will start drifting and electron-hole pair
recombination occurs across the junction. This results in net current that rapidly
P-n Junction Breakdown
Breakdow
n
V
voltage,
VBR A
A Zener diode is designed to

operate in the breakdown mode:
62
Breakdown Voltage, VBR
• If the reverse bias voltage (-VA) is so large that the peak electric
field exceeds a critical value ECR, then the junction will “break
down” (i.e. large reverse current will flow)
63
Avalanche Breakdown Mechanism
High E-field: if VBR >> Vbi
ECR increases slightly with N:

For 1014 cm-3 < N < 1018 cm-3,
105 V/cm < ECR < 106 V/cm
Low E-field:
64
Tunneling (Zener) Breakdown Mechanism
Dominant breakdown mechanism when both sides of a

junction are very heavily doped.
VA = VA <
0 0
Ec
Ev
Typically, VBR < 5 V for Zener breakdown

65
VBR Temperature Dependence
• For the avalanche mechanism:

• VBR increases with increasing T, because the mean free path decreases
• For the tunneling mechanism:

• VBR decreases with increasing T, because the flux of valence-band electrons
available for tunneling increases
66
Zener Diodes
The Zener is a diode operated
in reverse bias at the Zener
Voltage (Vz).
• When Vi ≥ VZ
– The Zener is on
– Voltage across the Zener is VZ
– Zener current: IZ = IR – IRL
– The Zener Power: PZ = VZIZ
• When Vi < VZ
– The Zener is off
– The Zener acts as an open circuit
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Zener Resistor Values
If R is too large, the Zener diode cannot conduct because the available amount of
current is less than the minimum current rating, IZK. The minimum current is given
by:
ILmin = IR − IZK The maximum value of resistance is:
RLmax = VZ
I Lmin
If R is too small, the Zener current exceeds the maximum

current rating, IZM . The maximum current for the circuit is
given by: V VZ
IL = =
max L R L R L
min
The minimum value of resistance
is:
RLmin = RV
VZi −V Z
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Practical Applications
● Rectifier Circuits
– Conversions of AC to DC for DC operated
circuits
– Battery Charging Circuits
● Simple Diode Circuits

– Protective Circuits against
– Overcurrent
– Polarity Reversal
– Currents caused by an inductive kick in a relay
circuit
● Zener Circuits
– Overvoltage Protection
– Setting Reference Voltages
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Examples Zener Diode
Q1:-Determine the reference voltages provided by the network of Fig.
which uses a white LED to indicate that the power is on. What is the level of current
through the LED and the power delivered by the supply? How does the power absorbed by
the LED compare to that of the 6-V Zener diode?
soln:
First we have to check that there is sufficient applied voltage to turn on all the
series diode elements. The white LED will have a drop of about 4 V across it, the 6-V and
3.3-V Zener diodes have a total of 9.3 V, and the forward-biased silicon diode has 0.7 V,
for a total of 14 V. The applied 40 V is then sufficient to turn on all the elements and, one
hopes, establish a proper operating current.
70
71
a. For the network of Fig. 2.119 , determine the range of R L and I L that will result in V RL
being maintained at 10 V.
b. Determine the maximum wattage rating of the diode.
72
73
2:Determine the range of values of Vi that will maintain the Zener diode of Fig. 2.121 in the “on”
state.
74
75
practise on zener diode
1:- Find out the output voltage if the breakdown voltage of Zener diode is 75V.
76
2. Find out the output voltage from the fig.
77
3.Find out the output voltage from the fig.
78
Rectifiers
• Half wave Rectifiers
• Full wave Rectifiers
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Half-Wave Rectification
The diode only

conducts when it
is forward
biased, therefore
only half of the
AC cycle passes
through the
diode to the
output.
The DC output voltage is 0.318Vm, where Vm = the peak AC

voltage.
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Que1:-
a. Sketch the output v o and determine the dc level of the output for the network of Fig.
b. Repeat part (a) if the ideal diode is replaced by a silicon diode.
solution:-
In this situation the diode will conduct during the negative part of the input as shown in
Fig.2.50 and vo will appear as shown in the same figure. For the full period, the dc level is
The negative sign indicates that the polarity of the output is opposite to the defined
polarity of Fig. 2.49 .
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82
Que2:-Determine the output waveform for the network of Fig. and calculate
the output dc level and the required PIV of each diode.
83
84
Full-Wave Rectification
The rectification process can be

improved by using a full-wave rectifier
circuit.
Full-wave rectification produces a

greater DC output:
• Half-wave: Vdc = 0.318Vm

• Full-wave: Vdc = 0.636Vm
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Bridge Rectifier
● Four diodes are

connected in a bridge
configuration
VDC = 0.636Vm
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Center-Tapped
Transformer Rectifier
Requires
• Two diodes
• Center-tapped
transformer
VDC = 0.636Vm
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Derivation of Average value for Half wave.
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Derivation of RMS value for Half Wave.
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Continued…
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Derivation of Average value for Full wave
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Derivation of RMS value for Full Wave.
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Efficiency of Half Wave Rectifier
• Efficiency( η) = dc power delivered to load
Ac Input Power
Rf – diode forward Resistance

Rs- Series winding Resistance
RL- Load Resistance
Similarly Efficiency for Full wave Rectifier can be determined by substituting Idc and Irms Value for Full wave
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Ripple Factor for Half wave Rectifier
• Ripple Factor(γ)= RMS value of ac component of Current
Dc value or average value of Current
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Similarly Ripple factor for full wave rectifier can be determined by substituting Irms
and Idc value for full wave
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PIV (PRV)
Because the diode is only forward biased for one-half of the AC
cycle, it is also reverse biased for one-half cycle.
It is important that the reverse breakdown voltage rating of the

diode be high enough to withstand the peak, reverse-biasing AC
voltage.
PIV (or PRV) > Vm
• PIV = Peak inverse voltage

• PRV = Peak reverse voltage
• Vm = Peak AC voltage
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Diode Clippers
The diode in a series clipper
“clips” any voltage that does
not forward bias it:
•
•A reverse-biasing polarity
•A forward-biasing polarity less
than
0.7 V (for a silicon diode)
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Biased Clippers
Adding a DC source in
series with the clipping
diode changes the
effective forward bias of
the diode.
98
Parallel Clippers
The diode in a parallel

clipper circuit “clips” any
voltage that forward bias
it.
DC biasing can be added in

series with the diode to
change the clipping level.
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Summary of Clipper Circuits
more…
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Summary of Clipper Circuits
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Clampers
A diode and capacitor

can be combined to
“clamp” an AC signal to
a specific DC level.
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Biased Clamper Circuits
The input signal can be any type
of waveform such as sine, square,
and triangle waves.
The DC source lets you adjust

the DC camping level.
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Summary of Clamper Circuits
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question on clipper,clamper
1. find out the Vo output voltage of the following fig. 1,2,3.
105
unknown value of resistance at input is R.
106
BJT
Transistor Construction
There are two types of transistors:
• pnp
• npn
pnp
The terminals are labeled:

• E - Emitter
• B - Base
• C - Collector
npn
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107
Currents in a Transistor
Emitter current is the sum of the
collector and base currents:
I E = IC + I B
The collector current is comprised

of two currents:
IC = IC(mejority)+ ICO(minority)
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108
Common-Base Configuration
The base is common to both input (emitter–

base) and output (collector–base) of the
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transistor.
109
Common-Base Amplifier
Input Characteristics
This curve shows the relationship

between of input current (IE) to
input voltage (VBE) for three
output voltage (VCB) levels.
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110
Common-Base Amplifier
Output Characteristics
This graph demonstrates the

output current (IC) to an output
voltage (VCB) for various levels of
input current (IE).
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111
Operating Regions
• Active – Operating range of the

amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.
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112
Approximations
Emitter and collector
currents:
Ic ≌ Ie
Base-emitter voltage:
VBE = 0.7 V (for Silicon)
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113
Alpha (α)
Alpha (α) is the ratio of IC to IE
:
α IC
dc =
IE
Ideally: α = 1
In reality: α is between 0.9 and 0.998
Alpha (α) in the AC mode:

Ic
αac IE
=
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114
Transistor Amplification
Currents and Voltage

Voltages: Gain:
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115
Common––Emitter Configuration
The emitter is common to both input

(base-emitter) and output (collector-
emitter).
The input is on the base and the

output is on the collector.
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116
Common-Emitter Characteristics
Base Characteristics
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Collector Characteristics 117
Common-Emitter Amplifier Currents
Ideal Currents
IE = IC + IB IC = α IE
Actual Currents
IC = α IE + ICBO where ICBO = minority collector

current
ICBO is usually so small that it can be ignored,
except in high power transistors and in high
temperature environments.
When IB = 0 A the transistor is in cutoff, but there is some minority

current flowing called ICEO. ICBO
ICEO = 1−α IB =0 A
10/12/2021 118
Beta
( β )
β represents the amplification factor of a transistor. (β is
sometimes referred to as hfe, a term used in transistor
modeling calculations)
In DC mode:
Ic
β dc=
IB
In AC
mode:
= IC
β ac IB VCE =consant
10/12/2021
119
Beta (β)
Determining β from a
Graph
(3.2 mA −2.2mA)
β AC =
(30 uA − 20 uA)
= 100 =
2.7 mA
β DC = VCE =
25 A 7.5
= 108
10/12/2021
120
Beta (β)
Relationship between amplification factors β and α
β α
α= β=
β+ α −1
1
Relationship Between Currents
IC = IE = (β + 1)IB
βIB
10/12/2021
121
Transistor
Numerical
Analysis of the circuit for Example (a) circuit; (b) circuit redrawn to remind the reader of the
convention used in this book to show connections to the dc sources; (c) analysis with the steps
numbered.
given VBE=.7v BETA =100
(a) circuit; (b) analysis, with the steps indicated by the circled
numbers.
Load Line
10/12/2021 125
Voltage Divider bias Circuit
practise question on bjt
1:find the value of ic and vce
Determine the levels of RC, RE, R1, and R 2 for the network of Fig. 4.63
for the operating point indicated.

FETs vs.
BJTs
Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits
Differences:
• FETs are voltage controlled devices. BJTs are current controlled
devices.
• FETs have a higher input impedance. BJTs have higher gains.
• FETs are less sensitive to temperature variations and are more easily
integrated on ICs.
• FETs are generally more static sensitive than BJTs.
10/12/2021
131
FET
Types
•JFET: Junction FET
•MOSFET: Metal–Oxide–Semiconductor
FET
③D-MOSFET: Depletion MOSFET

③E--MOSFET: Enhancement
MOSFET
132
N-Channel JFET Symbol
133
D-Type MOSFET Symbols
10/12/2021
134
Enhancement MOSFET SYMBOLS
10/12/2021
135
JFET Construction
There are two types of JFETs
•n-channel
•p-channel
The n-channel is more widely used.
There are three terminals:
•Drain (D) and Source (S) are connected to the n-channel

•Gate (G) is connected to the p-type material
10/12/2021
136
JFET Operation:The Basic Idea
JFET operation can be compared to a water spigot.
The source of water pressure is the

accumulation of electrons at the
negative pole of the drain-source
voltage.
The drain of water is the electron

deficiency (or holes) at the positive
pole of the applied voltage.
The control of flow of water is the

gate voltage that controls the width
of the n-channel and, therefore, the
flow of charges from source to
drain.
10/12/2021 137
JFET Operating Characteristics
There are three basic operating conditions for a
JFET:
• VGS = 0, VDS increasing to some positive value

• VGS < 0, VDS at some positive value
• Voltage-controlled resistor
10/12/2021
138
JFET Operating Characteristics: VGS = 0 V
Three things happen when VGS = 0 and VDS is increased from 0 to a more positive
voltage
• The depletion region between p-gate
and n-channel increases as electrons
from n-channel combine with holes
from p-gate.
• Increasing the depletion region,

decreases the size of the n-
channelwhich increases the
resistance of the n-channel.
• Even though the n-channel resistance

is increasing, the current (ID) from
source to drain through the n-
channel is increasing. This is because
VDS is increasing.
10/12/2021
139
JFET Operating Characteristics:Pinch Off
If VGS = 0 and VDS is further increased to a

more positive voltage, then the depletion zone
gets so large that it pinches off the n-channel.
This suggests that the current in the n- channel

(ID) would drop to 0A, but it does just the
opposite–as VDS increases, so does ID.
10/12/2021
140
JFET Operating Characteristics: Saturation
At the pinch-off point:
• Any further increase in VGS does not

produce any increase in ID. VGS at
pinch-off is denoted as Vp.
• ID is at saturation or maximum. It is
referred to as IDSS.
• The ohmic value of the channel is

maximum.
10/12/2021
141
‘
As VGS becomes more negative, the
depletion region increases.
10/12/2021
10
142
As VGS becomes more negative:
• The JFET experiences

pinch-of at a lower
voltage (VP).
• ID decreases (ID < IDSS)

even though VDS is
increased.
• Eventually ID reaches 0
A. VGS at this point is
called Vp
or VGS(off)..
Also note that at high levels of VDS the JFET reaches a breakdown
situation. ID increases uncontrollably if VDS > VDSmax.
10/12/2021 143
p-Channel JFET Characteristics
The p-channel JFET behaves the

same as the n-channel JFET,
except the voltage polarities and
current directions are reversed.
10/12/2021
144
JFET Transfer
Characteristics
The transfer characteristic of input-to-output is not as straightforward in

a JFET as it is in a BJT.
In a BJT, β indicates the relationship between IB (input) and IC (output).
In a JFET, the relationship of VGS (input) and ID (output) is a little more

complicated:
145
JFET Transfer
Curve
This graph shows the

value of ID for a
given value of VGS.
10/12/2021
146
practise on JFET
147
148
149
150
Textbooks & Reference Books:-
Microelectronics by Sedra Smith
Integrated Electronics by Millman & Halkies
Electronic devices & Circuits theory by Boylestad
10/12/2021 151

BECT Semiconductor Devices Circuits 211208 193735

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Module 2

• How doping a pure silicon crystal dramatically

• The structure and operation of the pn junction

Single-element crystal Compound crystal

• Each pair of shared forms a

• silicon at low temps: • silicon at room temp:

Doping – is the intentional introduction of impurities

Law of Electrical Neutrality

Important: now the number of free electrons (aka.

• the concentration of • the concentration of

• Two distinct mechanisms for current flow (movement of

1) Resistivity of the intrinsic silicon is reduced

Q(b): Find the resistivity of p-type silicon with NA = 1016/cm2

The result is a p-n junction.

The electrons in the n-type

The electron migration

• The forward voltage causes

• The reverse voltage causes

(a) the forward current and (b) the reverse voltage.

Is is the saturation current ~10 -14

The diode is a 2-terminal device. A diode ideally conducts

Note the regions for no

Carefully note the scale

Temperature dependence of the diode forward characteristic. At a constant current, the

voltage drop decreases by approximately 2 mV for every 1°C increase in temperature.

Analysis (for silicon)

V(R)= E -Vd1 = 10 -.7 = 9.3

I1= (9.3/.33k ohm)

Common Zener voltages are between 1.8

A Zener diode is designed to

ECR increases slightly with N:

Dominant breakdown mechanism when both sides of a

Typically, VBR < 5 V for Zener breakdown

• For the avalanche mechanism:

• For the tunneling mechanism:

If R is too small, the Zener current exceeds the maximum

● Simple Diode Circuits

The diode only

The DC output voltage is 0.318Vm, where Vm = the peak AC

The rectification process can be

Full-wave rectification produces a

• Half-wave: Vdc = 0.318Vm

● Four diodes are

Rf – diode forward Resistance

It is important that the reverse breakdown voltage rating of the

PIV (or PRV) > Vm

• PIV = Peak inverse voltage

The diode in a parallel

DC biasing can be added in

A diode and capacitor

The DC source lets you adjust

The terminals are labeled:

The collector current is comprised

The base is common to both input (emitter–

This curve shows the relationship

This graph demonstrates the

• Active – Operating range of the

Alpha (α) in the AC mode:

Currents and Voltage

The emitter is common to both input

The input is on the base and the

IC = α IE + ICBO where ICBO = minority collector