EEE3411 Electronics

│LECTURE 2│
│

Bipolar Junction Transistor

Learning Objectives

Understand the characteristics and operation of both NPN

and PNP transistors

1. Characteristics of BJTs

Transistor Structure
Bipolar Junction Transistors (BJT) has three layers and two p-n
junctions. Transistors can be either NPN or PNP type.

Fig 2-1 BJT structure and schematic symbol

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 Transistor Bias
In order for the transistor to operate properly as an amplifier, the BE
junction must be forward-biased, and the BC junction must be
reverse-biased.

Fig 2-2 Transistor bias

Transistor Action and Current Relationship

Emitter is heavily doped.
Base is very thin and lightly doped.
Collector is medium doped.
98% or more current carriers emitted from emitter go into collector
region.
IE = IC + IB
IE ≅ IC (IB ≅ 0)

Fig 2-2 Transistor currents

Transistor connection mode

CE mode: Base as input, Collector as output, Emitter as common
CB mode: Emitter as input, Collector as output, Base as common
CC mode: Base as input, Emitter as output, Collector as common

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Transistor DC Current Gains

dc current gain in CE mode (βdc or β) = hFE = IC/IB
dc current gain in CB mode (αdc or α) = hFB = IC/IE

βdc = αdc / (1 − αdc)

αdc = βdc / (1 + βdc )

Example
Determine βDC and IE for a transistor where IB = 50µA and IC = 3.65mA.

Solution

βdc = IC/IB = 3.65mA / 50µA = 73

IE = IC + IB = 3.65mA + 50µA = 3.7mA

Current – Voltage Analysis of BJT Circuit

Ohm’s law, Kirchhoff’s voltage law and βdc are required to analysis a
transistor circuit.
VBE ≅ 0.7V
IB = (VBB − VBE) / RB
IC = βIB
VCE = VCC − ICRC
VCB = VCE − VBE

Fig 2-3 Current-Voltage analysis of BJT

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 Example
Determine IB, IC, IE, VBE, VCE and VCB in the circuit of Figure 4-8. The
transistor has a βdc = 150.

Fig 2-4 Example of BJT bias circuit

Solution

Assume VBE = 0.7V

IB = (VBB − VBE) / RB = (5 − 0.7) / 10k = 430µ
µA
IC = βIB = (150)(430µA) = 64.5mA
IE = IC + IB = 64.5mA + 430µA = 64.9mA

VCE = VCC − ICRC = 10 − (64.5mA)(100Ω) = 3.55V

VCB = VCE − VBE = 3.55 − 0.7 = 2.85V

2. Characteristic curves, load line

Curves showing how the collector current (IC) varies with the
collector-emitter voltage (VCE), for specified values of base current (IB)

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Fig 2-5 Characteristics of transistor in CE mode

Transistor at Cut-off
IB = 0
The transistor is in the cutoff region
(practically no current flow in the collector part of the circuit, IC = ICEO ≅ 0)
With the transistor in the cutoff state, VCE = VCC

Fig 2-5 Transistor at cut-off

Transistor in Saturation

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 Although IC = β IB, however, there is a limit to how much current can
flow in the collector circuit regardless of additional increases in IB.
Once this maximum, IC(sat)=VCC/RC, is reached, the transistor is said to be
in saturation.
VCE(sat) ≅ 0 (0.2V typical)

Fig 2-6 Transistor in saturation

Example
Determine whether or not the transistor in Figure 4-15 is in saturation.
Assume VCE(sat) = 0.2V

Fig 2-7 Example of Transistor in saturation

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Solution

IC(sat) = (VCC − VCE(sat)) / RC = (10 − 0.2) / 1k = 9.8mA

IB = (VBB − VBE) / RB = (3 − 0.7) / 10k = 0.23mA
IC = βIB = (50)(0.23) = 11.5mA

βIB > IC(sat) ⇒ Saturation

DC Load Line
The dc load line graphically illustrates IC(sat) and cutoff for a transistor.
y-intercept: IC(sat) = VCC/RC
x-intercept: VCE = VCC

Fig 2-8 The DC load line

Maximum Transistor Rating

Maximum collector current, IC(max)
Maximum collector-emitter voltage, VCE(max)
Maximum power rating, PD(max)

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 Fig 2-9 Maximum transistor ratings

3. The BJT as a switch

A transistor when used as a switch is simply being biased so that it is in
cutoff (switched off) or saturation (switched on). Remember that the
VCE in cutoff is VCC and 0V in saturation.

Fig 2-10 Transistor as a switch

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Example
A BJT with a 5V supply is designed to switch a 5V 20mA lamp on and
off. The transistor chosen is from a batch with variations in hfe from
100-500. The switching configuration is for common emitter, the bias
circuit is shown below. Find a value for Rb to work with any transistor
in the same gain group.

Fig 2-11 Example of transistor as a switch

Solution

As the transistor chosen may have any hfe between 100 and 500 then
the minimum current gain is chosen (100). The collector current is
20mA, the required base current is therefore:
hfe = Ic / Ib
ib = Ic / hfe(min) = 20/100= 0.2mA

The value of Rb can now be found. As the switching input, Vin is 5V

and the base emitter voltage of the transistor, Vbe is 0.6V then 4.4V is
developed across Rb. As a base current of 0.2mA is required, then :
Rb = 4.4 / 0.2 = 22 kΩ
A transistor with a gain higher equal to or higher than 100 will easily
work and light the lamp. The collector emitter voltage of the
transistor will be very low (around 0.1 V) the power dissipated in the
transistor is also low Ic * Vce = 2mW, and almost full power is
developed in the load.
Note: An over-drive factor of 1 is assumed in the calculation.

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 4. Reading data sheets
Manufacturers generally classify their BJTs into three broad categories:
general-purpose/small devices, power devices, and RF devices.

The following sample shows part of the specification of a power BJT

(2N3055).

Fig 2-12 Example of data sheet of a power transistor

 Revision

Read reference on No. 3 Sections 4-3, 4-5

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