IXLF 19N250A

High Voltage IGBT IC25 = 32 A

in High Voltage VCES = 2500 V
ISOPLUS i4-PACTM VCE(sat) = 3.2 V
tf = 250 ns

1
1
2
5
2

IGBT Features
• High Voltage IGBT
Symbol Conditions Maximum Ratings - substitute for high voltage MOSFETs
VCES TVJ = 25°C to 150°C 2500 V with significantly lower voltage drop
and comparable switching speed
VGES ± 20 V - substitute for high voltage thyristors
with voltage control of turn on & turn off
IC25 TC = 25°C 32 A
- substitute for electromechanical trigger
IC90 TC = 90°C 19 A
and discharge relays
ICM VGE = ±15 V; RG = 47 Ω; TVJ = 125°C 70 A • ISOPLUS i4-PACTM
VCEK RBSOA, Clamped inductive load; L = 100 µH 1200 V high voltage package
- isolated back surface
Ptot TC = 25°C 250 W - enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
Symbol Conditions Characteristic Values - application friendly pinout
(TVJ = 25°C, unless otherwise specified) - high reliability
min. typ. max. - industry standard outline
VCE(sat) IC = 19 A; VGE = 15 V; TVJ = 25°C 3.2 3.9 V - UL registered E72873
TVJ = 125°C 4.7 V
Applications
VGE(th) IC = 1 mA; VGE = VCE 5 8 V
• switched mode power supplies
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.15 mA • DC-DC converters
TVJ = 125°C 0.2 mA • resonant converters
• laser generators, x ray generators
IGES VCE = 0 V; VGE = ± 20 V 500 nA • discharge circuits
td(on) 100 ns
tr 50 ns
Inductive load, TVJ = 125°C
td(off) 600 ns
VCE = 1500 V; IC = 19 A
tf 250 ns
VGE = ±15 V; RG = 47 Ω
Eon 15 mJ
Eoff 30 mJ
Cies 2.28 nF
Coes VCE = 25 V; VGE = 0 V; f = 1 MHz 103 pF
Cres 43 pF
QGon VCE = 1500V; VGE = 15 V; IC = 19 A 142 nC
RthJC 0.5 K/W
407

IXYS reserves the right to change limits, test conditions and dimensions.

© 2004 IXYS All rights reserved 1-4

 IXLF 19N250A

Component Dimensions in mm (1 mm = 0.0394")

Symbol Conditions Maximum Ratings

TVJ -55...+150 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~
FC mounting force with clip 20...120 N

Symbol Conditions Characteristic Values

min. typ. max.
dS,dA C pin - E pin 7.0 mm
dS,dA pin - backside metal 5.5 mm
RthCH with heatsink compound 0.15 K/W
Weight 9 g

407

2-4 © 2004 IXYS All rights reserved

 IXLF 19N250A

80 50
VGE = 17 V
VGE = 17 V
TJ = 25°C 15 V TJ = 125°C
A A
15 V
40
IC 60 IC
13 V
13 V
30
40 11 V

20
11 V
20
10
9V
9V
0 0
0 1 2 3 4 5 V 6 0 1 2 3 4 5 V
VCE VCE

Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics

80 10000
VCE = 20 V
f = 1 Mhz
70
A
pF
60 Cies
Capacitance

IC
1000
50
40
30 Coes
TJ = 125°C 100
20
Cres
10
TJ = 25°C
0 10
6 7 8 9 10 11 12 13 14 V 15 0 10 20 30 V 40
VGE VCE

Fig. 3 Typ. Transfer Characteristics Fig. 4 Capacitance curves

20 80
V A
VCE = 1500 V
15 IC = 19 A 60
TJ = 25°C ICM
VGE RG = 47Ω
TJ = 125°C
10 40 VCEK < VCES

5 20

0 0
0 50 100 150 nC 0 400 800 1200 1600 2000 2400 V
QG VCE

Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area
RBSOA
407

© 2004 IXYS All rights reserved 3-4

 IXLF 19N250A

50 200 60 1200
mJ VCE = 1500 V ns ns
VCE = 1500 V
VGE = ±15 V mJ
50 1000
40 160 VGE = ±15 V
RG = 47 Ω
Eon Eoff RG = 47 Ω
TJ = 125°C
tr t 40 800 t
TJ = 125°C
30 120
td(on) 30 600
20 80 td(off)
20 400

10 40
10 200
Eoff tf
Eon
0 0 0 0
0 10 20 30 40 A 0 10 20 30 40 A
IC IC
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current

35 350 40 2000
mJ VCE = 1500 V td(on) ns
30 300 mJ ns
VGE = ±15 V Eoff
IC = 19 A
Eon 25 250 t Eoff 30 1500
TJ = 125°C VCE = 1500 V t
tr
VGE = ±15 V td(off)
20 200
20 IC = 19 A 1000
15 150 TJ = 125°C
Eon
10 100
10 500
tf
5 50

0 0 0 0
0 50 100 150 200 Ω 250 0 50 100 150 200 Ω 250
RG RG

Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor

1
K/W

ZthJC

0.1

single pulse IXLF19N250A

0.01
0.001 0.01 0.1 1 s 10
t

Fig. 11 Typ. transient thermal impedance

407

4-4 © 2004 IXYS All rights reserved

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