Lab Answer Sheet - E6 CHARACTERISTICS OF BJT AMPLIFIER EEE410/EPO413

LABORTORY REPORT COVERPAGE (CO4, PO9:30%)
ELECTRICAL ENGINEERING LABORATORY(EEE410/EP0413)

FACULTY OF ELECTRICAL ENGINEERING
UNIVERSITI TEKNOLOGI MARA
EXPERIMENT’S TITLE:
EXPERIMENT NO:
GROUP: EXPERIMENT DATE:
PROGRAM CODE: SUBMISSION DATE:
INSTRUCTORS: i)
ii)
STUDENT’S NAME STUDENT ID
1)
2)
3)
Weighted Marks
(Part A) Assessment Criteria ** Marks Allocated
Obtained (WMO)
Results:
List all the data collected and show them graphically. 30.00
Present and label clearly the figures, tables and graphs.
Exhibit significant results of the project
Discussions:
Discuss and analyze all results thoroughly. 30.00
Discuss and evaluate the experimental procedure to achieve the objectives
Include calculation and interpret them by comparing with theoretical values.
Explain the reason on each interpretation
Conclusions:
Summarize the whole experimental results 10.00
State whether your results support your theory
Comments about its success and effectiveness.
Explain your achievements, problems and suggestions.
Grammar:
Written with correct grammar e.g. sentence structure, tenses and spelling 5.00
Total Part (A) 75.00
**Notes: All criteria in Part (A) are assessed based on the PO9 Lab Report Evaluation rubrics.
Marks Marks Obtained

(Part B) Assessment Criteria Rem
Allocated
arks
Pre-Lab 15.0
Pre-lab is assessed based on the marking
Students need to answer and submit all 0
pre-lab in the report. scheme of the respective laboratory
Quizzes 10.0
Quizzes are assessed based on the
Students need to submit answer for 0
marking scheme of the respective
quizzes in the lab report.
laboratory
Total Part (B) 25.0

0
TOTAL ( (A) +
(B)) /100%
1
CHARACTERISTICS OF BJT AMPLIFIER EEE410/EPO413
PRE-LAB WORK:
Read this document, especially the Experimental Work section. Search the internet or refer to the
textbook and grasp as much as possible the material before performing the virtual lab session. Students
should understand the basic operation of an amplifier by answering the following questions:
1) Draw the small signal analysis for the circuit of Figure 2
R1 RC Co
120 K 3K3 22 µF
+ Vo
Ci
2.2 µF
BC VCC
+
108 15 V
R3 RE
+
Vi CE
27 K 1K 47 µF
Figure 2
Answer:
2) Draw the frequency response graph. In the graph, identify the region for low frequency, high
frequency, bandwidth and the point where low cut-off and high cut-off frequency occur.
Answer:
2
3) What types of capacitor that will affect low frequency region?
Answer:
4) What types of capacitor that will affect high frequency region?
Answer:
NOTE:
Bring references, text books, internet materials to the lab.
Bring along graph papers.
Students/Group leader has to get your instructor to approve all your PRE-LAB work before commencing
the experiment. Submit the pre-lab work together with the report.
EXPERIMENTAL WORK & RESULTS:
1. Construct circuit shown in Figure 1 using LTSPICE Simulation software.
Figure 1
2. Run and simulate the circuit to measure value of V B, VC and VE respectively. Use DC operating
point analysis. Record the values in Table 1. Using the values obtained, calculate the values of
VBE and VCE using the following relations:
VBE = VB – VE
VCE = VC – VE
3. Verify your results using theoretical calculations. Use β the same as the data of your transistor
applied in the simulation and VBE=0.7V.
Answer:
Table 1 (approximately)
3
VB VC VE VBE = VB -VE VCE = VC - VE

Calculated
Simulated
Answer:
4. Change the input signal, Vin according to Figure 2 and set the AC Amplitude to 1.
Figure 2
5. Set the Transient Analysis as depicted in Figure 3 for the analysis setup.
4
Figure 3
6. Perform the AC operating point analysis as depicted in Figure 4.
Figure 4.
7. Based on the frequency response graph acquired, determined the lower cut-off frequency, upper
cut-off frequency and bandwidth.
Answer :
5
DISCUSSIONS:
1) Discuss the finding of VE, VB and VC between simulation and calculation. Does the simulation
result consistent with the expected results?
2) Discuss further on the bandwidth of amplifier from graph.

The bandwidth (BW), which is the range of frequencies over which gain remains within 3
dB of constant gain Av(mid). From the simulation graph, the value of :
Lower cut-off frequency (f1) = ≈
Upper cut-off frequency (f2) = ≈.
Bandwidth = f2 – f1 =
3) State the advantages and disadvantages of both BJT and FET amplifiers.
QUIZ:
Determine the resistor value of R 1, R2 and Rc for the common-emitter voltage divider
bias network as shown in Figure Q1 using resistor nearest preferred values (NPV) with
the following parameters:
VCC = 20 V, ICsat = 6 mA, ICQ = 0.5 ICsat, and β = 100.

VCC
20 V
R1 RC
Co
Vo
Ci
Q1
Vi R2 RE
1K0 CE
Figure Q1
6
CONCLUSION:
Conclude the detail findings and the outcomes from this experiment. This should include the summary of
knowledge gained, comments and discussion of the results, errors and their possible sources and how
this experiment can be improved.
REFERENCES:
1) Boystead, L. R. & Nashelsky, L., “Electronic Devices and Circuit Theory” 10 th Edition, Pearson
Prentice Hall, 2009.
2) Rashid, M. H., “Microelectronic Circuits Analysis and Design”, Cengage Learning, 2011.
END
7
SET OF QUIZZES:
EEE410 ELECTRICAL ENGINEERING LABORATORY I

QUIZ CHARACTERISTICS OF BJT AMPLIFIER - E6
QUIZ 1
Determine the resistor value of R 1, R2 and Rc for the common-emitter voltage divider
bias network as shown in Figure Q1 using resistor nearest preferred values (NPV) with
the following parameters:
VCC = 20 V, ICsat = 6 mA, ICQ = 0.5 ICsat, and β = 100.

VCC
20 V
R1 RC
Co
Vo
Ci
Q1
Vi R2 RE
1K0 CE
Figure Q1
Answer:
I CQ =0.5 I Csat =0.5 ( 6 m )=3 mA x Assume I C ≈ I E x KVL , x−V CC + I C RC +V CE + I E R E =0 x
At saturation ,V CE=0
V CC 20
I Csat = =6 mA x RC = −1 k=2.33 k Ω x NPV , RC =2.2 k Ω x Assume: β R E=10 R2 x
RC + R E 6m
100 ( 1 k )
R2= =10 k Ω xV B=V BE+ I E R E =0.7+3 m ( 1k )=3.7 V x
10
R2 10 k
V B= ( V ) =3.7 V = (20 ) x R1=44.1 k Ω x NPV , R1=47 k Ω
R 1+ R 2 CC R1 +10 k
8

QUIZ 2
Determine RC and RB for a fixed-bias configuration in Figure Q2 if VCC = 12 V, β = 100,

ICQ = 2.5mA and VCEQ = 6V. Use standard resistor values (NPV).
VCC
RB RC
Co
Vo
Ci
Q2
Vi
Figure Q2
Answer:
I C 2.5 m 12−0.7
KVL , x I B= = =25 μA x −V CC + I B R B +V BE =0 x R B= =452 k Ω x
β 100 25 μ
12−6
NPV , RB =470 k Ω x KVL , x −V CC + I C RC +V CE =0 x RC = =2.4 k Ω x NPV , RC =2.2 k Ω
2.5 m
9

QUIZ 3
Determine RC, RE and RF for emitter-stabilized network in Figure Q3 at ICQ = 0.5ICsat and
VC = 0.5VCC. Use VCC = 16 V, ICsat =10mA, β = 100 and RF = 4RC. Use standard resistor
values (NPV).
VCC
RB RC
Co
Vo
Ci
Q3
Vi
RE
Figure Q3
Answer:
IC 4m
V C =0.5V CC=0.5 ( 16 )=8 V x I B= = =40 μA x KVL , x−V CC + I C RC +V C =0 x
β 100
16−8
RC = =2 k Ω x NPV , RC =2.2 k Ω x R F=40 RC =40 ( 2k )=80 k Ω x NPV , R F=82k Ω x
4m
16−8− ( 40 μ )( 80 k )
−V CC + I B R F +V BE + I E RE =0 x Assume I C ≈ I E x R E= =1.2 k Ω x
4m
NPV , R E=1.2 k Ω
10

QUIZ 4
Determine the resistor value of R1, R2, RE, and Rc for a voltage-divider bias network in
Figure Q4 using supply of 24 V, a transistor with beta of 110 and an operating point of
ICQ = 4 mA and VCEQ = 8V. Use standard resistor values (NPV) and with the following
assumptions, βRE = 10R2 and VE = 0.1 VCC.
VCC
R1 RC
Co
Vo
Ci
Q4
Vi R2 RE CE
Figure Q4
Answer:
V E 2.4
V E=0.1 V CC =0.1 ( 24 ) =2.4 V x Assume I C ≈ I E=4 mA x R E= = =600 Ω x NPV , R E=560 Ω x
IE 4m
24−8−2.4
KVL , x−V CC + I C RC +V CE + I E R E =0 xRC = =3.4 k Ω xNPV , RC =3.3 k Ω x
4m
110 ( 600 )
Assume: β R E=10 R2 x R2= =6.6 k Ω x NPV , R2=6.8 k Ω x
10
R2 6.6 k
V B=V BE+ V E =0.7+2.4=3.1 V xV B= ( V CC ) =3.1 V = ( 24 ) x R1=44.5 k Ω x
R 1+ R 2 R1+ 6.6 k
NPV , R1=47 k Ω
11
12

Lab Answer Sheet - E6 CHARACTERISTICS OF BJT AMPLIFIER EEE410/EPO413

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LABORTORY REPORT COVERPAGE (CO4, PO9:30%)

ELECTRICAL ENGINEERING LABORATORY(EEE410/EP0413)

Total Part (A) 75.00

Marks Marks Obtained

Total Part (B) 25.0

1) Draw the small signal analysis for the circuit of Figure 2

3) What types of capacitor that will affect low frequency region?

4) What types of capacitor that will affect high frequency region?

Bring along graph papers.

EXPERIMENTAL WORK & RESULTS:

1. Construct circuit shown in Figure 1 using LTSPICE Simulation software.

VB VC VE VBE = VB -VE VCE = VC - VE

6. Perform the AC operating point analysis as depicted in Figure 4.

2) Discuss further on the bandwidth of amplifier from graph.

Lower cut-off frequency (f1) = ≈

Upper cut-off frequency (f2) = ≈.

VCC = 20 V, ICsat = 6 mA, ICQ = 0.5 ICsat, and β = 100.

EEE410 ELECTRICAL ENGINEERING LABORATORY I

VCC = 20 V, ICsat = 6 mA, ICQ = 0.5 ICsat, and β = 100.

EEE410 ELECTRICAL ENGINEERING LABORATORY I

Determine RC and RB for a fixed-bias configuration in Figure Q2 if VCC = 12 V, β = 100,

EEE410 ELECTRICAL ENGINEERING LABORATORY I

EEE410 ELECTRICAL ENGINEERING LABORATORY I

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