Chapter 7 Solutions (Global Edition)

Prob. 7.1
Plot the doping profile.
For the base diffusion,
D ⋅ t = 3 ⋅10-13 cms ⋅ 3600s = 10.8 ⋅10-10 cm 2
2

2 D ⋅ t = 6.58 ⋅10-5cm π ⋅ D ⋅ t = 5.82 ⋅10-5cm

2
 x  x2
Ns -  -
N a (x) = ⋅e 2 D⋅ t 
= 8.6 ⋅10
17 1
⋅e 4.3⋅10-9 cm 2

π⋅D⋅t cm 4

Fo r the emitter diffusion,

D ⋅ t = 3 ⋅10-14 cm 2
s ⋅ 900s = 27.0 ⋅10-12 cm 2
2 D ⋅ t = 1.04 ⋅10-5cm π ⋅ D ⋅ t = 9.21 ⋅10-6 cm
 x   x 
N d (x) = N s ⋅ erfc   = 5 ⋅10
20 1
⋅ erfc  
 1.04 ⋅10 cm 
-5
 2 D⋅t 
cm3
Prob. 7.2
Sketch I C versus –V CE for the BJT and find –V CE for I B =0.1mA.
iC (mA)

20 0.20

0.16

IC
0.12

IB (mA)
10
0.08

0.04

5 10 -vCE (V)

-VCE (V)

-V CE =5V for I B =0.1mA

Prob. 7.3
Calculate the minority excess hole distribution δp ( x) / ∆p E in the base of a p-n-p
bipolar junction transistor (BJT), assuming WB / L p = 0.2 and 0.5. The calculations
have to be carried out for the base distance of L p and 2 L p .

We know excess minority hole concentration per excess hole concentration at the edge of
the E depletion region at n-type base is,

− xn / L p −WB / L p
δp( xn ) e
WB / L p xn / L p
.e −e .e
=
∆p E WB / L p −WB / L p
e −e

Now, WB / L p = 0.2: exp(0.2) = 1.2214; exp(-0.2) = 0.8187

δp( xn ) 1.2214 x0.3679 − 0.8178 x 2.7183

At xn = L p : = = −4.164
∆p E 1.2214 − 0.8187

δp( xn ) 1.2214 x0.1353 − 0.8178 x7.3891

At xn = 2 L p : = = −14.61
∆p E 1.2214 − 0.8187

Now, WB / L p = 0.2: exp(0.5) = 1.6487; exp(-0.5) = 0.6065

 δp( xn ) 1.6487 x0.3679 − 0.6065 x 2.7183
At xn = L p : = = −0.999
∆p E 1.6487 − 0.6065

δp( xn ) 1.6487 x0.1353 − 0.6065 x7.3891

At xn = 2 L p : = = −4.0860
∆p E 1.6487 − 0.6065

Prob. 7.4
Show the bias polarities, and depletion regions of an npn BJT in the normal active,
saturation and cutoff modes of operation. Draw the 3 sketches one below the other to
(qualitatively) reflect the depletion widths for these biases, and the relative emitter, base,
and collector doping.
Consider a BJT with a base transport factor of 1.0 and an emitter injection efficiency of
0.5.
Calculate roughly by what factor would doubling the base width of a BJT would
increase, decrease, or leave unchanged, the emitter injection efficiency and base
transport factor? Repeat for the case of emitter doping increased 5X. Explain with key
equations, and assume other BJT parameters remain unchanged!
B = 1, γ = 0.5
i
B = c = 1 means negligible recombination in base
i en
If Wb is reduced by 2X, still no recombination ⇒ B = 1
i en 2i en
i 'en = 2i en ; γ = = 0.5 ⇒ γ ' = = 0.67
i en + i ep 2i en + i ep
If emitter doping is changed, no effect on B ⇒ B = 1
ni2
If N E increased by 5X, i 'en ∝ ↓ 5X
NE
i en i
γ= = 0.5 ⇒ en = 1
i en + i ep i ep
i en 5
γ' = =
i en + 0.2i en 6

Prob. 7.5
An npn BJT has emitter, base and collector doping levels of 1019 cm-3, 5X1018 cm-3 and
1017 cm-3, respectively. It is biased in the normal active mode, with a emitter-base voltage
of 1V. If the neutral base width is 100 nm, the emitter is 200 nm wide, and we have
negligible base recombination, calculate the emitter current, emitter injection efficiency
and base transport factor. You can assume electron and hole mobility of 500 and 100
cm2/V-s, respectively, in the emitter, and 800 and 250 cm2/V-s in the base. The device
gets heated up to 400 K during operation such that n i = 1012 cm-3, and ε r = 15.
Qualitatively sketch the device structure, the carrier concentrations, and the band
diagram under bias below it. Assume that the carrier lifetimes are 0.1μs everywhere.
VEB = 1 V
μ n = 500 cm /V ⋅ s μ n = 800 cm /V ⋅ s
2 2

E:  B: 
μ p = 100 cm /V ⋅ s μ p = 250 cm /V ⋅ s
2 2

T = 400 K, n i = 1012 cm -3 , ε r = 15
Wb = 100 nm
kT 400 K
= 0.0259 V × = 0.0345 V
q T = 400K 300 K
kT
Dn = × μ n = 0.0345 V × 800 cm 2 /V ⋅ s = 27.6 cm 2 /s
q
kT
Dp = × μ p = 0.0345 V ×100 cm 2 /V ⋅ s = 3.45 cm 2 /s
q
⇒ Lnp = D p τ p = ( 3.45 cm /s )( 0.1×10 s ) = 5.88 μm
2 -6

Since WE = 200 nm, carrier profile is linear in E

Since there is negligible base recombination, carrier profile is linear in B
IEn qD n n i 2  qVkTBE  2  0.0345 V 
1V
=  e (
-1  ; 8.83 × 10 -8
A/cm)  e  = 0.34 MA/cm
2

A WB N B    
IEp qD p n i  kT 
2 qV
 1 V

( )
BE

= e -1 ; 2.76 ×10-9 A/cm 2  e 0.0345 V  = 0.0107 MA/cm 2

A WE N E    
Base transport factor: B = 1 (negligible base recombination)
Ien 0.34
γ= = = 0.97
Ien + Iep 0.34 + 0.0107
Prob. 7.6
For a n+—p—n- BJT, show the current contributions, and band diagram.

EQUILIBRIUM NORMAL BIAS

n+ p n n+ p n

E – n+ B–p
electron flow

IE
recombination
back injection IP

IB
Prob. 7.7
Find the emitter injection efficiency, base transport factor, and transistor gains.

For a pnp transistor, p p = 5 x1018 / cm 3 ; nn = 1017 / cm 3 m n = 1250cm 2 / V − sec ;

m p = 450cm 2 / V − sec WB = 0.985 x10 −4 cm and τ p = τ n = 10 −7 sec ;
L p = Ln = 10 mm = 10 −4 cm

−1
 L p n .nn .µ n p W 
γ = 1 + . tanh  B 
Injection efficiency,  Ln p . p p .µ p n L n 
  p 
= 0.9945

W 
Base transport factor, B = sec h Bn  = sec h(0.0985) = 0.9951
L 
 p 

CB current gain, α = B.γ = 0.9951x0.9945 = 0.9896

α 0.9896
CE current gain, β = = = 95.43
1 − α 0.01037
Prob. 7.8
Calculate the desired values for each BJT modification.
Let us assume a PNP BJT; the results are the same for NPN.
WB, WE « L
a) find the change in the collector current NE NB NC
q ⋅ A ⋅ Dp ⋅ pn q ⋅ A ⋅ Dp ⋅ n 2 q⋅VBE
⋅e
i kT
IC = =
W N B WB WE WB
If WB′ = 0.5 ⋅ WB and N′B = 10 ⋅ N B forward reverse
IC I
then I′C = = C
10 ⋅ 0.5 5
b) find γ and B
W B , W E >>L

Since we assume that the base and the emitter are much shorter than the diffusion length,
the carrier concentration profiles vary linearly with distance in the top figure.
If N E = 100 ⋅ N B and WE = 0.1 ⋅ WB
q⋅VBE q⋅VBE
n i2 n i2
then using I En α ⋅ e kT and I Ep α ⋅ e kT
N E ⋅ WE N B ⋅ WB
1
IEp N B ⋅ WB 1 1 1
γ= = = = = = 0.91
IEp + IEn 1 1 N B ⋅ WB N B ⋅ WB 1 + 0.1
+ 1+ 1+
N B ⋅ WB N E ⋅ WE N E ⋅ WE 100 ⋅ N B ⋅ 0.1 ⋅ WB
Base carrier profile is linear so B = 1

c) find B and γ
Here, since we assume that the base and emitter regions are much longer than the
diffusion lengths, the carrier concentrations decay exponentially with distance, as shown
in the lower figure.
Base carrier profile for long diode exponentially decays to 0; so B = 0
If N E = 100 ⋅ N B and L n = L p = L
q⋅VBE q⋅VBE
n i2 n i2
then using I En α ⋅e kT
and I Ep α ⋅ e kT
NE ⋅ L NB ⋅ L
1
IEp NB ⋅ L 1 1 1
γ= = = = = = 0.99
IEp + IEn 1 1 NB NB 1 + 0.01
+ 1+ 1+
NB ⋅ L NE ⋅ L NE 100 ⋅ N B
Prob. 7.9
Identify which gives the best diode characteristics.

Connection (b) gives the best diode since the stored charge is least and the current is
good. Connection (a) is not a good diode since the current is small and symmetrical
about V=0. Connections (c) and (d) are not good diodes because the stored charge is
high.
Prob. 7.10
Derive the expression for the excess minority hole concentration by solving the diffusion
equation in a uniformly doped p-n-p bipolar transistor in forward active region having
base width WB .

In the base of pnp BJT, from diffusion equation we get,

d 2 (dp( x )) dp( x )
Dn . − = 0 where, LB = DB .τ B
dx 2 τB

 x   x 
The general solution is of the form, δp ( x ) = A. exp  + B. exp − 
 LB   LB 

Now applying boundary conditions,

  V  
δp(0) = A + B = p(0) − p0 = p0 exp EB  − 1

KT / q   

 WB   
Also, δp (WB ) = A. exp  + B exp − WB  = − p0
 Lp   Lp 
   
  V  
Thus, δp(0 ) = A + B = p(0 ) − p0 = p0 exp EB  − 1
  KT / q  

Substituting in the second boundary condition, we get,

  V   W 
p0 exp EB  − 1. exp B  + p0
  KT / q    Lp 
B=  
W 
2 sinh  B 
 Lp 
 
   V    − WB 
− p0 exp EB  − 1. exp  − p0
  KT / q    L 
B=  p 
W 
2 sinh  B 
 Lp 
 
Thus the minority hole concentration will be,

  V   W − x   
p0 exp EB  − 1.sinh  B  − sinh  x 
  KT / q    Lp   Lp 
δp( x ) =    
W 
sinh  B 
 Lp 
 

Prob. 7.11
(a) Find I for the transistor connection
q ⋅ A ⋅ D p ⋅ Dp E W 
DpC =0 so I = ⋅ ctnh  b 
Lp  Lp
 
.
(b) Describe how I divides between the base and collector leads.
q ⋅ A ⋅ D p ⋅ Dp E W 
IC = ⋅ csch  b 
Lp  
 Lp 
q ⋅ A ⋅ D p ⋅ Dp E  Wb 
⋅ tanh 

IB =
Lp  2 ⋅ Lp
 
Prob. 7.12
Show currents and find the current transfer ratio, the emitter junction efficiency, the
common base current gain, the common emitter current gain, I CBO , the base transit time,
and the lifetime.
E–p B–n C–p

IE Ip Emitter holes Ip Collector IC

recombination reverse
In saturation
back injection
currents

IB=IEp+(1-B)IEn

I Cp 9.8mA
current transfer ratio = B = = = 0.9800
IEp 10mA
IEp 10mA
emitter efficiency = γ = = = 0.9901
IEp + IEn 10mA+0.1mA
common base current gain = α = B ⋅ γ = 0.9703
α
common emitter current gain = β = = 32.7
1-α
ICBO = ICn = 1μA
QB 4.9 ⋅10-11C
base transit time = τ t = = = 5 ⋅10-9s = 5ns
I Cp 9.8 ⋅10 A
-3

QB 4.9 ⋅10-11C
lifetime = τ p = = = 2.45 ⋅10-8s = 24.5ns
⋅
(1-B) I Ep ⋅ ⋅
0.02 10 10 A-3

If ICp decreases then B decreases as do α and β.

If I En decreases then B decreases as do α and β.
Prob. 7.13
(a) Calculate the peak electric field at the CB junction and the CB depletion
capacitance/unit area for normal biasing, with a CB bias of 30 V.
(b) Estimate the neutral base width narrowing at this voltage, ignoring the EB depletion
region.

1 1 q.W
We know, VCB = E.W = . .W = 30
2 2  1 1 
ε 0 . + 
 Na Nd 
Or,
1/ 2 1/ 2
  1 1   −14  1 1 
 2 x30 xε 0 x +    2 x 30 x11. 8 x8 . 854 x10 x 
 16 + 
15  
W =  a
N N d 
=  10 10 
 q   1.6 x10 −19 
   
   
= 65.65 x10 − 5 cm

2VCB 2 x30
Maximum electric field, E = = = 0.93 x105 V/cm.
W − 5
65.65 x10

ε 11.8 x8.854 x10 −14

CB depletion capacitance/ unit area, C j = = = 1.59 x10 − 9
W 65.65 x10 − 5
F/cm2.

−5
Now total base width, W = xn0 + x p 0 = 65.65 x10

16 15
Again, 10 .xn0 = 10 .x p 0

 x p0  −5
Thus, xn0 .1 +  = 65.65 x10
 xn 0 

xn0 = 5.97 x10 − 5 cm = effective base width narrowing.

Prob. 7.14
(a) Show that I EO and I CO are the saturation currents of the emitter and collector.
 q⋅VCB   q⋅VEB 
For IC = 0, equation 7-32b gives ICS ⋅  e kT - 1 = α n ⋅ I ES ⋅  e kT - 1
   
 q⋅VEB   q⋅VCB 
Substituting in 7-32a gives I E = I ES ⋅ (1 - α I ⋅ α N ) ⋅  e kT - 1 = I EO ⋅  e kT - 1
   

 q⋅kT
VEB
  q⋅kT
VCB

For I E = 0, equation 7-32a gives I ES ⋅  e - 1 = α l ⋅ ICS ⋅  e - 1
   
 q⋅kT
VCB
  q⋅kT
VCB

Substituting in 7-32b gives -IC = ICS ⋅ (1 - α I ⋅ α N ) ⋅  e - 1  = ICO ⋅  e -1 
   
where the minus sign arises from the choice of IC defined in the reverse direction
through the collector junction.

(b) Find Δp C with emitter forward biased and collector open and with emitter open and
collector forward biased. Find Δp E with collector forward biased and emitter open.

IC =0 → ΔpC = α I ⋅ Δp E
I E =0 → Δp E = α N ⋅ ΔpC
(c) Sketch δp(x n ) for each of the cases in part(b).
δp δp

∆PE ∆PC

α Ι∆PE α Ν∆PC

xn O xn
O
Wb Wb
Prob. 7.15
Compute the saturation currents and the electron and hole components of emitter current
under 0.2 V of emitter-base applied bias.

At Base:

2
ni 2.25 x10 20
pn = = 16
= 2.25 x10 4 / cm 3
nn 10

KT
Diffusion coefficient, D p = µ p = 0.0259 x 400 = 10.36
q

Diffusion length, L p = D p .τ p = 10.36 x10 −6 = 3.21x10 −3 cm

Saturation currents,
 Dp   WB   −4 
I ES = I CS = q. A. . p n . coth  = 1.6 x10 −19 x10 − 4 x 10.36  x 2.25 x10 4 x coth 0.8 x10 
  3.21x10 −3   3.21x10 −3 
 L p   Lp   
= 4.65 x10 −15 Amp

At Emitter:

ni 2 2.25 x10 20
np = = 18
= 2.25 x10 2 / cm 3
pn 10

KT
Diffusion coefficient, Dn = µ n = 0.0259 x800 = 20.72
q

Diffusion length, Ln = Dn .τ n = 20.72 x10 −6 = 4.55 x10 −3 cm

Electron component of emitter current,

D   q.V   20.72   0.2 
I En = q. A. n .n p . exp EB  = 1.6 x10 −19 x10 − 4 x −3 
x 2.25 x10 2 x exp 
 Ln   KT   4.55 x10   0.0259 
= 3.70 x10 −`4 Amp
Hole component of emitter current,
 Dp   
I Ep = q. A. . p n . exp q.V EB . coth WB 
 Lp   KT   Lp 
   
 10.36  18  0.2 
= 1.6 x10 −19 x10 −4 x −3 
x10 x exp  x coth(0.025)
 3.21x10   0.0259 
= 4663.93 Amp

Prob. 7.16
(a) Explain how the base transit time may be shorter than the hole lifetime.
δp(x n ) is a steady steady state hole distribution with an
average replacement time equal to the hole lifetime.
These replaced holes are indistinguishable and transit
time is not affected by this replacement; so, the base
transit time may be shorter than the hole lifetime.

(b) Explain why the turn-on transient of a BJT is faster

when the device is driven into oversaturation.
The turn-on transient is faster in oversaturation because the Q b =Q s condition is reached
earlier in the exponential rise.
 -
t
τp

Q b = IB ⋅ τ p ⋅ 1 - e 
 
 
 
 1 
t s = τ p ⋅ ln   with β ⋅ I B � IC giving t s >τ p
 1- IC 
 β⋅I 
 B 

Prob. 7.17
Design an n-p-n HBT with reasonable γ and base resistance.
Since this is an open-ended design problem, there is no unique solution. Students should
use the results of Equation 7-81 with the band gap difference of 0.42eV between GaAs
and Al 0.3 Ga 0.7 As, to conclude that the base doping can be considerably higher than the
emitter doping while maintaining a good emitter injection efficiency for electrons. It is
possible to estimate the base spreading resistance with the higher doping concentration.
Note that Appendix III only gives values for light doping. Clearly, much important
information will be lost in these estimates because of the sparse information the students
have to work with. For example, real HBTs using AlGaAs/GaAs suffer from surface
recombination problems, and scaling of these devices to small dimensions is inhibited.
Some of the students will be interested enough to read current articles on and will
therefore provide comments to this effect. In fact, a good answer to this problem might
begin, “I wouldn’t use AlGaAs/GAAs. Instead, I would…”
Prob. 7.18
Plot β for the given BJT.

Prob. 7.19
(a) What is Q b in Figure 7-4 at the d-c bias?
Q b = I B ⋅ τ p = 10-4 A ⋅10-5s = 10-9 C
or Q b = IC ⋅ τ t = 10-2 A ⋅10-7s = 10-9 C

(b) Why is B different in the normal and inverted mode of a diffused BJT?
The base transport factor is affected by the built-in field resulting from the doping
gradient in the base. This field assists transport in the normal mode, but opposes
transport in the inverted mode.
Prob. 7.20
For the given p-n-p transistor, calculate the neutral base width Wb .
The built-in potential at the base-emitter junction can be given by (assuming contribution
on heavily doped emitter side is half E g =0.55 eV):
kT N B
VbiBE ≅ 0.55 + ln = 0.898 V
q ni
The built-in potential at the collector-base junction is given by:
kT  N B N 
VbiBC ≅ ln + ln c 
q  ni ni 
 1016 1016 
= 0.0259V⋅ln + ln  = 0.696 V
⋅ 10
 1.510 ⋅ 10 
1.510

Next calculate the width of the base-emitter and base-collector space charge regions
2∈s
WEB =
qN B
(
VbiBE -VEB )
Since N E >>N B and the B-E junction is forward biased.
⋅ ⋅
211.88.85 ⋅10-14 cm
F
WEB = ( 0.898V - VEB )
1.6 ⋅10-19 C10
⋅ -16 cm1 3
for V EB = 0.2V W EB = 3.02·10-5 cm
for V EB = 0.6V W EB = 1.97·10-5 cm
The width of the collector-base space charge region is given by:
2∈s N C +N B
WCB = ⋅ ⋅φT
q NC NB

Note: One-sided step junction cannot be assumed since for this problem N B =N C
Given: V CB = 0
φT = VbiBC = 0.696V
Hence:
WCB = 0.426 ⋅10-4 cm
Calculate width of neutral base region
Given: W = metallurgical base width = 1.5 microns
NC
WB = W - WEB - ⋅WCB
N B +N C
For VEB = 0.2V
0.426
WB = 1.5 - 0.302 - = 0.985 microns
2
For VEB = 0.6V
0.426
WB =1.5 - 0.197 - = 1.09 microns
2
Prob. 7.21
For the BJT in Problem 7.20, calculate the base transport factor and the emitter injection
efficiency for V EB = 0.2V and 0.6V.
First determine the electron and hole diffusion lengths.
Given τ n = τ p = τ o = 10-7s
2
D n = D p = 10 cms
L n = D n τ n = 10 ⋅10-7 = 10-3cm
L P = L n = L = 10μm

Calculate the base transport factor, B.

2
W 1 1 W 
For B << 1, B = ≈ 1- ⋅  b 
Lp W  2  L p 
cos h  b 
 Lp
 
2
1  0.985μm 
For VEB =0.2V → B = 1- ⋅   = 0.995
2  10μm 
2
1  1.09μm 
For VEB =0.6V → B = 1- ⋅   = 0.994
2  10μm 
Calculate the emitter efficiency γ:

IEp
γ=
IEp + IEn
I Ep is the current for holes from the emitter to the base;
I En is the current for electrons injected from the base to the emitter.

Calculate I Ep and I En as functions of VEB .

I Ep = diffusion current injected across B-E junction by the emitter (holes for p-n-p transistor)
I En = diffusion current injected across B-E junction by the base (electrons for p-n-p transistor)
For the given p-n-p:
D p ⋅ n i2 qVEB
IEp = A⋅q ⋅ ⋅e kT
(hole current)
N B WB
D n ⋅ n i2 qVkTEB
IEn = A⋅q⋅ ⋅e (electron current; WE in the demoniator rather than L n since WE = L n )
N E WE
At VEB =0.2V,
10 cms ⋅ (1.5 ⋅1010
2
1 0.2eV
)
I E= 10 cm ⋅1.609 ⋅10 C ⋅
-5 2 -19 cm3
⋅ e 0.0259eV =8.251 ⋅10-12 A
p
1016 1
cm3
⋅ 0.985 ⋅10 cm
-4

10 cms ⋅ (1.5 ⋅1010

2
1 0.2eV
)
I En = 10 cm ⋅1.609 ⋅10 C ⋅
-5 2 -19 cm3
⋅ e 0.0259eV = 2.709 ⋅10-15 A
1019 1
cm3
⋅ 3 ⋅10-4 cm
At VEB =0.6V,
10 cms ⋅ (1.5 ⋅1010
2
1 0.6eV
)
I E= 10 cm ⋅1.609 ⋅10 C ⋅
-5 2 -19 cm3
⋅ e 0.0259eV =3.8 ⋅10-5 A
p
1016 1
cm3
⋅ 0.985 ⋅10 cm
-4

10 cms ⋅ (1.5 ⋅1010

2
1 0.6eV
)
I En = 10 cm ⋅1.609 ⋅10 C ⋅
-5 2 -19 cm3
⋅ e 0.0259eV = 1.38 ⋅10-8 A
1019 1
cm3
⋅ 3 ⋅10-4 cm

From those currents, γ may be calculated.

IEp
γ=
IEp + IEn
8.251 ⋅10-12 A
For VEB =0.2V, γ = = 0.9997
8.251 ⋅10-12 A+ 2.709 ⋅10-15 A
3.8 ⋅10-5 A
For VEB =0.6V, γ = = 0.9996
3.8 ⋅10-5 A+ 1.38 ⋅10-8 A
Prob. 7.22
For the BJT in Problem 7.20, calculate α, β, I E , I B , I C , and the Gummel number.
To calculate common base current gain alpha
α = B⋅ γ
VEB =0.2 V → α = 0.995 ⋅ 0.9997 = 0.9947
VEB =0.6 V → α = 0.994 ⋅ 0.9996 = 0.9936

To calculate beta
α
β=
1-α
0.9947
For VEB = 0.2 → β = = 187.7
1-0.9947
0.9936
For VEB = 0.6 → β = = 155.3
1-0.9936

To calculate currents I E , I B and I C for V EB = 0.2 and 0.6 V the emitter current is given
by:
IE = IEp + IEn
where I Ep and I En are the hole and electron currents, respectively, injected across
the base-emitter junction.
For VEB = 0.2V → I E = 8.251 ⋅10-12 A + 2.709 ⋅10-15 A = 8.254 ⋅10-12 A = 8.254pA
For VEB =0.6V → I E = 3.8 ⋅10-5 A + 1.38 ⋅10-8 A = 3.8 ⋅10-5 A = 38μA

The collector and base currents can be determined by:

D p ⋅ n i2 q⋅kT
VEB
IC = α ⋅ I E or IC = B ⋅ I Ep = B ⋅ A ⋅ q ⋅e
N B ⋅ Wb
I B = (1-α ) ⋅ I E = I E - IC
VEB =0.2V → α = 0.9947 and I E = 8.254pA
IC = 0.9947 ⋅ 8.254pA = 8.21pA
I B = 8.254pA - 8.21pA = 0.044pA
VEB =0.6V → α=0.9936 and I E = 38μA
IC = 0.9936 ⋅ 38μA = 37.8μA
I B = 28μA - 37.8μA = 0.2μA
Base Gummel Number = N B ⋅ Wb
For VEB =0.2V, Gummel number = 1016 1
cm3
⋅1.09 ⋅10-4 cm = 1.09 ⋅1012 1
cm 2

For VEB =0.6V, Gummel number = 1016 1

cm3
⋅ 0.985 ⋅10-4 cm = 9.85 ⋅1011 cm1 2

Prob. 7.23
For the given BJT, calculate β in terms of B and γ and using the charge control model.

kT
In emitter, LEn = μ n ⋅ ⋅ τ n = 150 cm
V⋅s ⋅ 0.0259V ⋅10 s = 1.97 ⋅10 cm = 0.197μm
-10 -5
2

q
In base,
kT
LBp = D p τ p = μ p ⋅ ⋅ τp = 400 cm
V⋅s ⋅ 0.0259V ⋅ 25 ⋅10 s = 1.61 ⋅10 cm = 1.61μm
-10 -4
2

-1 -1
 μE ⋅ NB ⋅ W   V⋅s ⋅10 cm3 ⋅ 0.2μm

216 1
150 cm
γ = 1+ nB DE Eb  = 1+  = 0.9992
 μ p ⋅ N A ⋅ L n  ⋅ ⋅ ⋅
2 18
 
cm 1
400 V⋅s 5 10 cm 3 0.197μm

( 0.2μm ) =.9961
2
W2
B=1- b2 =1-
2 ⋅ Lp 2 ⋅ (1.61μm )
2

B⋅ γ
β= = 213
1-B ⋅ γ

Charge control approach

Wb2
τt = = 0.514 ⋅10−11 s
2 ⋅ Dp
τp
β= = 486
τt

These differ because the charge control approach assumes γ = 1.

Prob. 7.24
For the BJT in 7.21, calculate the charge stored in the base when V CB =0V and
V EB =0.7V. Find f T if the base transit time is the dominant delay component.
 ( )
2
1 qVEB
1 1.5 ⋅1010 cm1 3 0.7
Q b ≈ ⋅ q ⋅ A ⋅ Wb ⋅ p n ⋅ e kT
= ⋅1.6 ⋅10 C ⋅10 cm ⋅ 0.2 ⋅10 cm ⋅
-19 -4 2 -4
⋅e .026
= 1.968 ⋅10-12 C
2 2 1016 cm1 3

( )
2
Wb2 0.2 ⋅10-4 cm
τt = = = 1.93 ⋅10-11s
2 ⋅ Dp 2 ⋅10.36 cms
2

1
fT = = 8.24 ⋅109 Hz
2π ⋅ τ t
Prob. 7.25
Calculate the base transit time for the transistor and the cut off frequency for the
transistor.

WB 2 100 x100 x10 −14

Base transit time, t tb = = = 4.48 ps.
2.Dn 2 x 25

Neglecting parasitic capacitances, the B-E charging time will be,

1x10 −12 = 25.9 ps.

KT 1 1
τe = . .C je = 0.0259 x
q IE − 3
1x10

xdc 50 x10 − 7
Collector depletion region transit time, τ cd = = = 0.217 ps.
vs 2.3 x10 − 7

( )
Collector capacitance charging time, τ C = rC . C µ + C S = 20 x[0.1 + 0.1]x10
−12
=4
ps.

Total emitter to collector delay,

t = t e + t tb + t cd + t C = 25.9 + 200 + 0.217 + 4 = 230.12 ps

1 1
Cut- off frequency, fT = = = 0.69 GHz.
2pτ 2 xpix 230.12 x10 −12
Prob. 7.26
Calculate (a) emitter injection efficiency (γ), (b) base transport factor (B), (c)
recombination factor, (d) CE current gain (β), and (e) CB current gain (α).

(1.5 x1010 ) 2
So we calculate, p E 0 = = 2.25 x10 2 /cm3.
1018

(1.5 x1010 ) 2
nB0 = = 2.25 x10 4 /cm3.
16
10

Emitter diffusion length, LE = DE .τ E 0 = 10 x10 − 7 = 10 − 3 cm.

Base diffusion length, LE = DB .τ B 0 = 25 x 4 x10 − 7 = 3.54 x10 − 3 cm.

Emitter injection efficiency,

1
γ=
p .D .L tanh (WB / LB )
1 + E0 E E .
n B 0 .DB .LE tanh(WE / LE )

1
=
1+
2
2.25 x10 x10 x10 −3
.
( −7
tanh 100 x10 / 3.16 x10 −3
) = 0.9944

2.25 x103 x 25 x3.16 x10 − 3 tanh(0.5 x10 − 4 / 10 − 3 )

Base transport factor,

1 1
B= =
(
cosh (WB / LB ) cosh 100 x10 − 7 / 3.16 x10 − 3
= 0.9998
)
Now,
q.DB .n B 0 1.6 x10 −19 x 25 x 2.25 x103
J so = = = 1.29 x10 − 9
LB . tanh(WB / LB ) 3.16 x10 − 3 x tanh(100 x10 − 7 / 3.16 x10 − 3 )
A/cm2.
 1
Recombination factor, δT = = 0.800
5 x10 − 6  − 0.5 
1+ . exp 
1.29 x10 − 9  2 x0.025 

CB current gain, α = γ .B.δ T = 0.9944 x0.9998 x0.800 = 0.795

α
CE current gain, β= = 3.87 .
1−α