Semiconductor Physics Final Exam.

Name:________________ (務必繳交題目卷)

1. Describe the following terms: (20%)

(a) ionized impurity scattering and its temperature dependence;
(b) velocity overshoot; (c) Einstein relation;
(d) charge neutrality; (e) low-level injection.

2. (a) Draw the electron concentration vs. temperature and indicate the three regions: partial ionization, extrinsic
and intrinsic. (5%)
(b) For a PN junction, describe the conditions to obtain: (i) np > ni2 and (ii) np < ni2. (5%)

3. A Si semiconductor material at T = 300 K is doped with arsenic (As) atoms to a concentration of 2 × 1015 cm-3
and with boron (B) atoms to a concentration of 1.2 × 1015 cm-3. Determine n0 and p0. (10%)
n o  N d  N a  2  10 15  1.2  10 15
 8 1014 cm 3

po 
n i2


1.5  1010 2

 2.81 10 5 cm 3
no 8  1014

4. Si at T = 300 K is doped with NA = 5 × 1015 cm-3. Donor atoms are added forming an n-type compensated
semiconductor such that 0.215 eV below the conduction band edge. What concentration of donor atoms are
added? (NV, Si = 1.04 × 1019 cm-3, NC, Si = 2.8 × 1019 cm-3, ni, Si = 1.5 × 1010 cm-3) (10%)
  E c  E F  
n o  N d  N a  N c exp  
 kT 

 0.

  0.215 
N d  5  1015  2.8  10 19 exp
0259
  5  10  6.95  10
15 15

 
N d  1.2  10 16 cm 3

5. A Si sample is 2.5 cm long and has a cross-sectional area of 0.1 cm2. The silicon sample is n-type with ND = 2
× 1015 cm-3. The resistance of the sample is measured and found to be 70 Ω. What is the electron mobility?
(10%)
L L L
R  
A A e n N d A
L 2.5
n    1116 cm 2 /V-s
eN d RA 1.6 10 
19

2  10 700.1
15

6. The hole concentration in p-type GaAs is given by p( x )  10 16 ( 1  x / L )2 cm-3 for  L  x  0 where L =

12 μm. The hole diffusion coefficient Dp = 10 cm2/s. Calculate the hole diffusion current density at x = -6 μm.
(10%)

d  16  x 
2
dp 10 16  x
J p  eD p  eD p 10 1     eD p   21  
dx dx   L   L  L

   
 6
 1.6  10 19 10  1016 2 1  
 12 
Jp 
12  10  4
7. Consider a bar of p-type silicon is uniformly doped at NA = 2 × 1016 cm-3 at T = 300 K. The applied electric
field is zero. A light source is incident at the end of the semiconductor as shown below. The steady-state
concentration generated at x = 0 is δp(0) = δn(0) =2 × 1014 cm-3. Assume μn = 1200 cm2/V-s, μp = 400 cm2/V-s,
τn0 = 10-6 s, and τp0 = 5 × 10-7 s. Neglecting surface effects. Determine the steady-state excess hole and electron
concentrations as a function of distance into the semiconductor. (15%)

nx   px   2  1014 e  x / Ln cm 3

p-type; minority carriers - electrons
 kT 
Dn     n  0.0259 1200   31.08 cm /s
2

 e 


L n  D n n 0  31.08 10 6  
1/ 2
 5.575  10 3 cm

8. A p-type Si sample is doped at NA = 6 × 1015 cm-3. It is determined that EFn - EFi = 0.27 eV. (a) Determine the
excess carrier concentration. (b) Calculate EFi - EFp. (Eg, Si = 1.12 eV; ni, Si = 1.5 × 1010 cm-3) (15%)
 n 
(a) E Fn  E Fi  kT ln 

 ni 
 E Fn  E Fi 
or n  ni exp 
kT    0.270 
 1.5  10 10 exp  
  5.05  10 cm
14 3

   0.0259 
 p o  p   6  1015  5.05  10 14 
(b) E Fi  E Fp  kT ln   0.0259  ln   0.33618 eV
  1.5  1010 
 ni   

9. Consider a uniformly doped Si junction with NA = 2 × 1017 cm-3 and ND = 4 × 1016 cm-3 at T = 300 K. The
junction area is 2 × 10-4 cm2 and the applied reverse bias is VR = -2.5 V. Calculate (a) Vbi; (b) s.c.r. width; (c)
maximum electric field; and (d) junction capacitance. (15%)

(a) Vbi  0.0259 ln 

 
 2  1017 4  10 16 

  0.8081 V

 1.5  10 10
2
 

 2  V  V R   N a  N d  
1/ 2 1/ 2
  211.7  8.85  10 14 0.8081  2.5  2  10 17  4  1016  
(b) W   s bi    
 e  N N
 a d

  1.6  10 19 
 2  10 4  10
17 16
  
 

 0.3584  10 4 cm = 0.3584  m
2Vbi  V R  20.8081  2.5
(c)  max    1.85  10 5 V/cm
W 0.3584  10  4

       
1/ 2
 1.6  10 19 11.7  8.85  10 14
1/ 2
 e s N a N d   2  1017 4  10 16
(d) C  A  
 2  10 4
  
 2Vbi  V R N a  N d   20.8081  2.5  2  10  4  10
17 16
  

 5.78  10 12 F = 5.78 pF