1. (a) For the ionized impurity scattering mechanism, explain its temperature dependence of mobility.

(5%)
(b) Draw the electron concentration vs. temperature and indicate the three regions: partial ionization, extrinsic
and intrinsic. (5%)
(d) Draw the position of Fermi level as function of donor concentration for an n-type semiconductor. (5%)
(e) What is surface effect? (5%)
(f) What is low-level injection? (5%)

2. Si at T = 300 K contains acceptor atoms at a density of NA = 5 × 1015 cm-3. Donor atoms are added forming an
n-type compensated semiconductor such that the Fermi level is 0.215 eV below the conduction band edge.
What concentration of donor atoms is added. (NV, Si = 1.04 × 1019 cm-3, NC, Si = 2.8 × 1019 cm-3, ni, Si = 1.5 ×
1010 cm-3) (15%) (4-49)

3. In a particular semiconductor, μn = 1000 cm2/V-s, μp = 600 cm2/V-s, and NC = NV = 1019 cm-3. These parameters
are independent of temperature. The measure conductivity is σ = 10-6 (Ω-cm)-1 at T = 300 K. Find the
conductivity at T = 500 K. (10%) (5-9)
4. The electron concentration in silicon at T = 300K is given by: n(x) = 1015 exp(-x/Ln) cm-3. Ln = 10-4 cm and Dn
= 25 cm2/s. Determine the electron diffusion current density at x = 10-4 cm. (10%) (P. 173 E.5-8)

5. In a p-type Si semiconductor, excess carriers are being generated at the end of the semiconductor bar at x = 0.
The doping concentration is NA = 5× 1016 cm-3 and ND = 0. The steady-state excess-carrier concentration at x =
0 is 1015 cm-3. The applied electric field is zero. Assume τn0 = τp0 = 8 × 10-7 sec. Calculate the excess carrier
distribution, δn(x), and the electron current densities at x = 0 ? (15%) (6-20)
6. An n-type Si sample with ND = 1016 cm-3 is steadily illuminated such that g’ = 1021 cm-3-s-1. If τn0 = τp0 = 10-6
sec, calculate the position of the quasi-Fermi levels for electrons and holes with respect to the intrinsic level,
EFi and plot these levels on an energy-band diagram. (15%) (6-29)

7. A silicon abrupt junction in thermal equilibrium at T = 300 K is doped such that EC - EF = 0.21 eV in the
n-region and EF - EV = 0.18 eV in the p-region.
Determine: (a) Vbi; (b) s.c.r. width at zero bias; (c) maximum electric field at zero bias; (d) depletion
capacitance at VR = -2 V. (20%) (E.7.7 p. 262)

(a)
(b)
12 12
 2 (V  VR )  N a  N d    2(11 .7)(8.85  10 14 )( 0.69 )  (9.97  8.43)  1015  
w   s bi     (9.97 )(8.43)  10 30  
 e  Na Nd   1.6  10 19  

 w  4.422 105 cm  0.442m

(c)
 2(Vbi  VR ) 2(0.69 )
Em ax    3.122  10 4 V cm
W 0.442  10  4

(d)
12 12
 e s N a N d   (1.6  1019 )(11.7)(8.85  1014 )(9.97  8.43)  1030 
C'       11.86  10 9 F cm2
 2(Vbi  VR )(N a  N d )   20.69  29.97  8.43  1015 