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DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC2533
AM TUNER FOR ELECTRONIC TUNING CAR RADIOS

The µPC2533 is an IC developed as an AM tuner for car stereos and car radios.
It employs an up-conversion type double super-heterodyne configuration (IF1 = 10.71 MHz, IF2 = 450 kHz).
The internal configuration consists of the MIX1 block (MIX1, OSC1, Buff1), MIX2 block (MIX2, OSC2, Buff2), IF
amplifier, detection circuit, AGC circuit, signal meter circuit, SD (station detector) circuit, and Lo/DX (short range/long
range) circuit.

Features
• Possible to select stations using only one varactor diode with narrow variable capacitance range
• Tracking adjustment unnecessary
• Coil switching between LW (long wave) and MW (middle wave) unnecessary
• Less sensitivity deviation due to tracking error
• High S/N: 60 dB
• Signal meter output with good linearity
• Signal meter output voltage inclination setting possible by external resistor.
• Can be used with IF (intermediate frequency) counter turning system or high/low tuning system.

SD Sensitivity Setting Signal Meter Voltage


Type Number Remarks
IF Counter Output High/Low Output Inclination Setting

µPC2533GS-01 Set by pin No. 7 Set by pin No. 9 Depends on SD SD sensitivity of IF counter
sensitivity setting system and high/low system
can be set independently.

µPC2533GS-02 Set by pin No. 7 Set by pin No. 9 Tilt of the signal meter
voltage can be set without
regard to SD sensitivity.

• LO/DX function on-chip


• Since IFT (intermediate frequency transformer) turn ratio is free from limitation for matching of ceramic filter
impedance, it is easy to design MIX gain with IFT.

The information in this document is subject to change without notice.

Document No. S11989EJ4V0DS00 (4th edition) The mark shows major revised points.
Date Published August 1998 N CP(K)
Printed in Japan
© 1993
µPC2533

Ordering Information

Part Number Package


µPC2533GS-01 36-pin plastic shrink SOP (300 mil)
µPC2533GS-02 36-pin plastic shrink SOP (300 mil)

Block Diagram RF AGC T.C.

IF AGC T.C.
MIX1OUT

MIX1OUT

Buff1OUT

MIX2OUT

MIX2OUT

Buff2OUT
RF AGC1

RF AGC2

MIX1BYP

MIX2BYP
MIX1IN

Buff1IN

MIX2IN

Buff2IN

IF2IN
GND
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19

RF AGC
MIX 1 Buff 1 MIX 2 Buff 2
driver

RF AGC MIX 2
detector AGC
IF
amplifier

AGC Time constant


comparator selector switch
Signal IF
LO/DX meter AGC

OSC OSC 1 Station OSC 2 Detector


Buff SEEK detector

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
OSC1 Buff

SD ACadj [SDadj]
ALC

Vref1

LO/DX

SEEK

SD ACOUT

SD IFIN

SD DCadj [SMOUT]

SD DCOUT

OSC2 (B)

OSC2 (E)

Vref2

MIX2AGC T.C.

VO (AF)

GND

VCC

IF2OUT

Remarks 1. Bold lines indicate flow of audio signal.


2. µPC2533GS-02 pin names are in parentheses. Pins not in parentheses are used in both the
µPC2533GS-01 and µPC2533GS-02.

2
µPC2533

Pin Configuration (Top View)

36-pin plastic shrink SOP (300 mil)


• µPC2533GS-01
• µPC2533GS-02

OSC1 Buff 1 36 RF AGC1

ALC 2 35 RF AGC2

Vref 1 3 34 RF AGC T.C.

LO/DX 4 33 MIX1IN

SEEK 5 32 MIX1OUT

SD ACOUT 6 31 MIX1OUT

SD ACadj [SDadj] 7 30 MIX1BYP

SD IFIN 8 29 Buff1IN

SD DCadj [SMOUT] 9 28 GND

SD DCOUT 10 27 Buff1OUT

OSC2 (B) 11 26 MIX2BYP

OSC2 (E) 12 25 MIX2OUT

Vref 2 13 24 MIX2OUT

MIX2AGC T.C. 14 23 MIX2IN

VO (AF) 15 22 Buff2IN

GND 16 21 Buff2OUT

VCC 17 20 IF AGC T.C.

IF2OUT 18 19 IF2IN

Remark µPC2533GS-02 pin names are in parentheses. Pins not in parentheses are used in both the
µPC2533GS-01 and µPC2533GS-02.

3
µPC2533

1. Pin Description

Names and symbols in parentheses indicate pin names for µPC2533GS-02. Names and symbols not in
parentheses are pin names used in both the µPC2533GS-01 and µPC2533GS-02.

(1/7)
Pin No. Symbol Name Equivalent Circuit

1 OSC1 Buff OSC1 Buff output


VCC

ZO = 30 Ω ±20 %

2 ALC OSC1 ALC


VCC 2

3 Vref1 Reference voltage Reference voltage (5.3 V)

4 LO/DX LO/DX control VCC

5 SEEK Seek request


Vref

5 kΩ
5

60 kΩ

4
µPC2533

(2/7)
Pin No. Symbol Name Equivalent Circuit

6 SD ACOUT SD AC output

RO = 20.5 kΩ ±20 %

500 Ω
6
20 kΩ

7 SD ACadj SD AC sensitivity setting


(and signal meter ouput) ( µ PC2533GS-01)
VCC

5 kΩ

[SDadj] [SD AC sensitivity and SD DC


sensitivity setting] ( µ PC2533GS-02)
VCC

5.2 V

5 kΩ

8 SD IFIN SD IF input
Vref

60 kΩ

500 Ω

5
µPC2533

(3/7)
Pin No. Symbol Name Equivalent Circuit

9 SD DCadj SD DC sensitivity setting


( µ PC2533GS-01)
(and signal meter output)
VCC

5 kΩ

[SMOUT] [Signal meter output] ( µ PC2533GS-02)

VCC

5.2 V

5 kΩ

10 SD DCOUT SD DC output (Active high)


10

11 OSC2 (B) OSC2 (base)


ZIN = 5 kΩ ±20 %
12 OSC2 (E) OSC2 (emitter)
11
VCC
Vref

ZO = 240 Ω ±20 %

12

13 Vref2 Reference voltage Reference voltage (6.0 V)

6
µPC2533

(4/7)
Pin No. Symbol Name Equivalent Circuit

14 MIX2AGC T.C. MIX2 AGC smoothing


14 RT = 1 kΩ ±20 %
RT
Vref

15 VO(AF) Audio output VCC

ZO = 300 Ω ±20 %

15

20

16 GND Ground GND (low frequency)

17 VCC Power supply voltage VCC

18 IF2OUT IF amplifier output


18

19 IF2IN IF amplifier input


19

20 IF AGC T.C. IF AGC input


VCC

15
RT

20
RT = 100 kΩ ±20 %

7
µPC2533

(5/7)
Pin No. Symbol Name Equivalent Circuit

21 Buff2OUT 2nd IF burffer output


ZO = 2 kΩ ±20 %

21

22 Buff2IN 2nd IF buffer input Vref

22

ZIN = 30 kΩ ±20 %

23 MIX2IN MIX2 input

23 26

ZIN = 330 Ω ±20 %

24 MIX2OUT MIX2 output


25 MIX2OUT MIX2 output 25 24

26 MIX2BYP MIX2 bypass

23 26

ZIN = 330 Ω ±20 %

27 Buff1OUT 1st IF buffer output

27

ZO = 330 Ω ±20 %

8
µPC2533

(6/7)
Pin No. Symbol Name Equivalent Circuit

28 GND Ground GND (high frequency)

29 Buff1IN 1st IF buffer input


Vref

29

ZIN = 15 kΩ ±20 %

30 MIX1BYP MIX1 bypass

33 30

ZIN = 1.2 kΩ ±20 %

31 MIX1OUT MIX1 output


32 MIX1OUT MIX1 output 31 32

Vref

33 MIX1IN MIX1 input

33 30

ZIN = 1.2 kΩ ±20 %

34 RF AGC T.C. RF AGC smoothing

34

ZO = 12 kΩ ±20 %

9
µPC2533

(7/7)
Pin No. Symbol Name Equivalent Circuit

35 RF AGC2 RF AGC output (cascade base)


Vref

ZO = 11 kΩ ±20 %

35

36 RF AGC1 RF AGC output (PIN diode)

36

ZO = 22 kΩ ±20 %

10
µPC2533

2. Operation of Each Block

2.1 FR Amplifier Circuit Block

Fig. 2-1 RF Ampliier Circuit

VCC

R1

C8 LPF
L3 R2 C6
L4 L5
33
MIX1
Q1 C3 C4 C5 30
+
From MIX2
Q2 C9 C7
L1

35
L2
C1 36 RF AGC LO/DXNote

34
C2 +
4

Note LO : 3 V or higher
DX : 1 V or lower

In the AM band, the capacitance of a car radio antenna depends on its length, diameter, cable length, etc. Therefore,
J-FET is used in the µPC2533 to raise RF input impedance.

Since the µPC2533 raises the first IF (intermediate frequency) to 10.71 MHz, there is no need for a tuning circuit
between the RF amplifier circuit and MIX1. Instead, it employs an LPF (about 6 MHz) consisting of L4, L5 and C3
to C5 between the RF amplifier circuit and MIX1 in order to cut image frequency (21.4 MHz or higher). Because this
allows a wide-band RF amplifier circuit to be configured without using a tuning circuit, frequency sensitivity deviation
can be minimized to a high degree.
The AGC circuit consists of RF AGC1 by the PIN diode connected to the FET gate and RF AGC2 by the cascade
transistor Q1. Use a low-noise transistor even with low current for the cascade transistor Q1 (if a high-noise one is
used, the S/N ratio deteriorates).

Remark Set bias voltage for cascade transistor Q1 to VC > VB.

11
µPC2533

2.2 MIX1 Block

Fig. 2-2 MIX1 Block

T1
VT
To 10.7 MHz
BPF
VCC
+

2 3 31 32 17 29 27

Q101 Q104
R112
Q102 Q103
Buff1
R11

Bias circuit
OSC1 Note
Q105 R111
Q109 Q108
Q106 Q107 R109
1
R110

R107 R108

28

From To RF AGC circuit (Fig. 2-4)


33
LPF

30

Note Output impedance and input impedance of Buff1 are 330 Ω and 15 kΩ, respectively.

MIX1 (Q101 to Q108) is a DBM (double balanced mixer).


MIX1 output is supplied to 10.7 MHz ceramic filter via Buff1 (output impedance: 330 Ω) for impedance matching.
The local oscillation signal is applied to the bases of Q101 to Q104, and the RF signal to the base of Q105. MIX1
(Q101 to 108) multiplies the local oscillation signal by RF signal, and converts to the resonance frequency of IFT T1
for output.
The local oscillation signal is output from pin 1 via Q109 (OSC Buff). It has an amplitude of 110 dBµV and can
be directly input to CMOS LSI for use by the PLL synthesizer.
The RF signal applied to the base of Q105 is also input to the detector of the RF AGC circuit.

12
µPC2533

2.3 MIX2 Block

Fig. 2-3 MIX2 Block

VCC Xtal
Note To IF amplifier
From 10.7 MHz BPF
+

28 23 17 24 25 14 13 12 11 22 21

R211 Current control R212


circuit
Buff2
Note
Q201 Q204
Q203
Q202 Q203
Bias
circuit
OSC2
Q208
R210 Q207
Q205
Q206

R209
R207 R208

To RF AGC circuit (Fig. 2-4)


From IF AGC (Fig. 2-6)

Note Output impedance and input impedance of Buff2 are 2 kΩ and 30 kΩ, respectively.

MIX2 (Q201 to Q208) is a DBM with a configuration similar to that of MIX1.


The major difference from the MIX1 is that MIX2 is equipped with a current control circuit for output and is controlled
by the AGC.
Input impedance of MIX2 is 330 Ω to match the 10.7 MHz ceramic filter. Output impedance of Buff2 is 2 kΩ to
match the 450 kHz ceramic filter.
IF signal input from pin 23 is also input to the detector of the RF AGC. The RF AGC is detected by both MIX1 and
MIX2 blocks.
The Buff1 and Buff2 ensure impedance matching between MIX1 and MIX2 outputs and each ceramic filter. As
a result, IFT design is not restricted by the need to match ceramic filter impedance. For turn ratio, etc., only conversion
gain need be taken input account, so it is easy to design.

13
µPC2533

2.4 RF AGC Block

Fig. 2-4 RF AGC Block

R412

R403 Q407 Q408

Q401
Bias circuit

R405

Q405

AMP. + From MIX2


Q402 Detection – (Fig. 2-3)
Time
constant and
Q403
switchover addition
R409 circuit AMP.
+ From MIX1
Q404 Q406 – (Fig. 2-2)
R402 D401
R404 R410
R406 R408

36 35 34
To RF amplifier
circuit (Fig. 2-1) +

The configuration of the RF AGC is shown in Fig. 2-4. After being detected by the RF AGC detector and added,
the input signal from MIX1 and MIX2 is smoothed by external capacitor of pin 34, and its DC voltage controls the RF
AGC.
RF AGC output controls the PIN diode from pin 36 and controls base voltage of cascade transistor which determines
FET VDS from pin 35. In addition, by detecting sudden fluctuation of pin 34 voltage and switching over time constants,
RF AGC response convergence when the electric field suddenly changes is improved.
Operation start time of the RF AGC can be delayed slightly by connecting a resistor parallel to the external capacitor
of pin 34.

14
µPC2533

2.5 IF Amplifier Block and Detection Block

Fig. 2-5 IF Amplifier and Detection Block

R19 T3
From 450kHz BPF To SD circuit
+
C19

19 18 VCC

17

IF amp


Bias circuit

Q301
R301 R302
+ Q302

15 Audio
output

R303 R304

From IF AGC circuit To IF AGC circuit


(Fig. 2-6) (Fig. 2-6)

In the IF amplifier block, DC feedback is carried to pin 19 via an external low pass filter (composed of T3 and C19)
from pin 18, an output pin. The DC electric potential of pin 18 is designed to be fixed approximately equal to the (+)
side input of the IF amplifier. The value of R19 is the input impedance, so impedance matching to 450 kHz ceramic
filter is possible.
The output signal current of the IF amplifier is converted to signal voltage by being resonated by T3 and input to
the detection circuit after frequency selection.
Emitter follower detection by Q302 is adopted for the detection circuit block.

15
µPC2533

2.6 IF AGC Block

Fig. 2-6 IF AGC Block (for µPC2533GS-01)

From detection circuit


To MIX2 (Fig. 2-3) To IF amp. (Fig. 2-5)
(Fig. 2-5)
VCC

Signal meter circuit Time


constant
D501 Q504 switchover
Q503
Bias circuit

Q501 Q502 D502


Note In the case of µPC2533GS-02,
Note the part enclosed by the
dotted line is illustrated as
shown below.

R501 R502
Voltage
5 kΩ 5 kΩ
limiter

R501 R502
To SD circuit
5 kΩ 5 kΩ
(Fig. 2-7)
From SD circuit
(Fig. 2-7)
7 9 20
+

IF AGC block configuration is shown in Fig. 2-6. The signal detected from pin 15 is smoothed by the capacitor
of pin 20, and its DC voltage controls the IF AGC.
The IF AGC controls the IF amplifier and MIX2. In the operation sequence, it first controls the gain of the IF amplifier,
then controls the gain of MIX2.
The signal meter circuit output (current output) is in proportion to the DC voltage smoothed by pin 20, and converted
to voltage by the external resistor of pin 7 or 9. Therefore, output voltage value and gain can be set by the value of
Note
the external resistor.

Note For relation between the external resistor and the signal meter, refer to Signal meter output voltage
(adjustment by resistor between pin 9 and GND) in section 4. Characteristic Curves.

16
µPC2533

2.7 Station Detector Circuit Block

Fig. 2-7 Station Detector Circuit Block

ON/OFF
+ Detection comparator 1


1.0 V
Bias circuit

Bias circuit
+ Detection comparator 2

1.0 V

+
From signal meter
circuit (Fig. 2-6) To time constant
switchover circuit
(Fig. 2-6)

10 5 6 8

From DTS (request)


SD output SD AC output 450kHz IF input
(Active high) (from T3)

The configration station detector (SD) circuit block is shown in Fig. 2-7.
The SD circuit stops scanning or seeking when a broadcast wave is received when auto scanning or seek tuning.
Since the µPC2533 has two outputs (DC high/low signal (open collector) and AC IF signal (f = 450 kHz)), it can be
used according to DTS (digital tuning system) type. Input the SD request signal from DTS to pin 5.
The SD sensitivity setting methods of the µPC2533GS-01 and µPC2533GS-02 differ.
With the µPC2533GS-01, SD sensitivities in the IF counter output system and in the high/low output system are
set by external resistor between pin 7 and GND and by external resistor between pin 9 and GND.
With the µPC2533GS-02, SD sensitivities in both the IF counter output system and high/low output system are set
by external resistor between pin 7 and GND (refer to Fig. 2-6).

Table 2-1 SD Sensitivity Setting Examples

Value of Resistor between Pin 9 or Pin 7 and GND SD Sensitivity (AC, DC)

51 kΩ 27 dBµV

24 kΩ 29 dBµV

10 kΩ 33 dBµV

17
µPC2533

The reference voltage of the µPC2533-01 and µPC2533-02 detection comparator has been internally fixed at
1.0 V.
Under the influence of R501 (5 kΩ) and R502 (5 kΩ) of the siganl meter circuit (Fig. 2-6), signal meter output voltage
and detection comparator input voltage do not perfectly coincide. For SD sensitivity setting, refer to the following
formula.

Detection comparator input voltage =

R501
Signal meter output voltage × (1 + )
Value of resistor between pin 7 and GND

Remark Because DC output is open-collector type (Active high), connect pull-up resistor to pin 10 to use.

18
µPC2533

3. Electical Characteristics

Absolute Maximum Ratings (TA = 25 °C)

Item Symbol Rating Unit

Power supply voltage VCC 10 V

Power dissipation PD 600 mW

Operating ambient temperature TA –40 to +85 °C

Storage temperature Tstg –55 to +125 °C

Caution Exposure to Absolute Maximum Ratings for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
The device should be operated within the limits specified under DC and AC Characteristics.

Recommended Operating Conditions (TA = 25 ˚C)

Item Symbol Conditions MIN. TYP. MAX. Unit

Power supply voltage VCC 7.5 8.0 8.5 V

Input voltage VIN 132 dBµV

Electrical Characteristics
(Unless specified, TA = 25 °C, VCC = 8 V, fIN = 999 kHz, fMOD = 400 Hz, AMMOD = 30 %, RSD1 (resistor between pin
7 and GND) = RSD2 (resistor between pin 9 and GND) = 24 kΩ, 15-pin measurement load = 100 kΩ)

Item Symbol Conditions MIN. TYP. MAX. Unit

Circuit current ICC No input (excluding FET) – 45 55 mA

Detection output VO VIN = 74 dBµV 150 180 210 mVrms

Signal-to-noise ratio S/N VIN = 74 dBµV 53 60 – dB

Total harmonic distortion 1 THD1 VIN = 74 dBµV – 0.3 1.0 %

Total harmonic distortion 2 THD2 VIN = 74 dBµV, AMMOD = 80 % – 0.7 1.0 %

Total harmonic distortion 3 THD3 VIN = 130 dBµV, AMMOD = 80 % – 0.7 1.5 %

Signal meter output voltage 1 VS1 No input – 0 0.2 V

Signal meter output voltage 2 VS2 VIN = 30 dBµV 0.5 1.5 2.5 V

Signal meter output voltage 3 Note VS3 VIN = 74 dBµV 4.8 5.5 6.7 V
(4.3) (5.0) (5.5)

Local buffer output 1 VOSC 1-pin load: 20 pF or less 106 110 114 dBµV

Note Specifications in parentheses for signal meter output voltage 3 are for µPC2533GS-02. Values of other items
are the same for µPC2533GS-01 and µPC2533GS-02.

19
µPC2533

Reference Characteristics

Item Symbol Conditions MIN. TYP. MAX. Unit

Maximum sensitivity MS VIN making VO –10 dB, where – 13 – dBµV


VO = 0 dB at VIN = 74 dBµV

S/D sensitivity (AC) SS(AC) VIN making SEEK, SD AC – 29 – dBµV


OUT level 101 dBµV or more

S/D sensitivity (DC) SS(DC) VIN making SEEK, SD AC – 29 – dBµV


OUT voltage 4.8 V or more

S/D output time T-SD Delay time from the time when 0 5 25 ms
changing SEEK VIN = 0 → 40
dBµV to the time when pin 10
voltage becomes 4.8 V or more

Vo stabilization time T-VO VIN = 60 → 100 dBµV, 60 160 260 ms


VO = ±3 dB

Tweet TW VIN = 74 dBµV, 2IF – 60 – dB

2nd local buffer negative ZOSC2 Maximum value of a series 400 – – Ω


impedance resistor with which the crystal
can oscillate

Usable sensitivity US VIN making S/N = 20 dB – 25 – dBµV

20
µPC2533

4. Characteristic Curves

Input/Output Characteristics (1)

Total harmonic distortion THD (%), Signal meter voltage (V)


MS (VO = VO
0 –10 dB)
7 VCC =8 V

Total harmonic level VO (dB), Noise (dB)


–10 fIN = 999 kHz
US (at S/N=20 dB) fMOD = 400 Hz
6 (µ PC2533GS-01) AMMOD = 30 %
–20 RSD1 = RSD2 = 24 kΩ
Signal meter voltage
5
–30 (µ PC2533GS-02)
4
–40
3
–50
2 Noise
–60
1 THD 30 %
–70
THD 80 %
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
MS = 14 dB µ V US = 25 dB µ V
Signal input level (dB µV)

Input/Output Characteristics (2)


Total harmonic distortion THD (%), Signal meter voltage (V)

VO
0
MS (VO =
Detection output level VO (dB), Noise (dB)

7 VCC = 8 V
–10 dB) fIN = 216 kHz
–10 fMOD = 400 Hz
US (at S/N=20 dB)
6 AMMOD = 30 %
(µ PC2533GS-01) RSD1 = RSD2 = 24 kΩ
–20
5 Signal meter voltage
–30 (µ PC2533GS-02)
4
–40
3
–50
Noise
2
–60
1 THD 30 %
–70
THD 80 %
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
MS = 12.5 dB µ V US = 28 dB µ V

Signal input level (dB µ V)

21
µPC2533

Input/Output Characteristics (3) (FET Load: 255 Ω) (Reference Only)

VO
0

Detection output level VO (dB), Noise (dB)


–10

VCC = 8 V
–20 fIN = 999 kHz
fMOD = 400 Hz
–30 AMMOD = 30 %
RSD1 = RSD2 = 24 kΩ
–40
Noise
–50

–60

–70

0 10 20 30 40 50 60 70 80 90 100 110 120 130


Signal input level (dBµ V)

Input/Output Characteristics (4)

VO
Detection output level VO (dB), Noise VN (dB)

0
VO VCC = 8 V
fIN = 999 kHz
–10 fMOD = 400 Hz
29 dB AMMOD = 30 %
RSD1 = RSD2 = 24 kΩ
–20

–30

–40
LO/DX low
LO/DX high VN
–50

–60
VN

–70
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Signal input level (dBµ V)

22
µPC2533

Cross-Modulation Characteristics (40 kHz Detuning)

Desired:
0 V = 100 dBµ V
80 dBµV
–10 40 dBµ V 45 dBµ V
VCC = 8 V

Detection output level VO (dB)


Desired: f = 999 kHz 60 dBµ V
–20 Interference: f = 1039 kHz

–30 Desired:
V = 40 dBµV
–40 45 dBµ V

60 dBµ V
–50
100 dBµV
80 dBµ V
–60
Desired: 400 Hz 30% modulation; interference: non-modulation
Desired: non-modulation; interference: 400 Hz 30% modulation
Desired: non-modulation; interference: non-modulation
50 60 70 80 90 100 110 120 130 140
Interference signal input level (dBµV)

Cross-Modulation Characteristics (40 kHz Detuning, FET Load 255 Ω) (Reference Only)

Desired:
0 V = 100 dBµ V
80 dBµ V
–10
Detection output level VO (dB)

45 dBµV 60 dBµV
40 dBµV
–20
VCC = 8 V
Desired:
–30 Desired: f = 999 kHz
Interference:
V = 40 dBµV
f = 1039 kHz
–40 45 dBµ V

–50 65 dBµ V

80 dBµ V 100 dBµV


–60
Desired: 400 Hz 30% modulation; interference: non-modulation
Desired: non-modulation; interference: 400 Hz 30% modulation
Desired: non-modulation; interference: non-modulation
0 50 60 70 80 90 100 110 120 130 140
Interference signal input level (dBµV)

23
µPC2533

Cross-Modulation Characteristics (400 kHz Detuning)

Desired:
0 V = 100 dBµ V
80 dBµ V
VCC = 8 V
–10 Desired: f = 999 kHz 40 dBµ V
60 dBµV

Detection output level VO (dB)


Interference: f = 1399 kHz
–20

–30 Desired:
V = 40 dBµV

–40

60 dBµ V
–50
100 dBµV
80 dBµ V
–60
Desired: 400 Hz 30% modulation; interference: non-modulation
Desired: non-modulation; interference: 400 Hz 30% modulation
Desired: non-modulation; interference: non-modulation
50 60 70 80 90 100 110 120 130 140
Interference signal input level (dBµV)

Power Supply Voltage Characteristics


Detection output level VO (dB), signal-to-noise ratio S/N (dB)

VO
0
Recommended
operating range
Maximum sensitivity MS (dB µV), usable sensitivity

–10 6

Signal meter output voltage 2 VS2 (V)


Signal meter output voltage 3 VS3 (V)
VS3

50 –20 5 Total harmonic distortion THD (%),


US (dBµ V), S/D sensitivity SS (dBµ V)

40 –30 4

SS
30 –40 3
US
20 –50 2
VS2
MS
10 –60 1
S/N
THD 80 %
THD 30 %
0
6 7 8 9 10
Power supply voltage (V)

24
µPC2533

Modulation Factor Characteristics

600
VCC = 8 V
fIN = 999 kHz
500

Detection output level VO (mVrms)


VO

400

Total harmonic distortion THD (%)


3 300

2 200

1 100
THD

0 0
20 40 60 80 100
Modulation factor (%)

Detuning Frequency Characteristics (Maximum Sensitivity), Signal Selectivity Characteristics

90

80

70
Signal input level (dBµV)

60

50

40

30

20

10

–15 –10 –5 0 5 10 15
Detuning frequency (kHz)

25
µPC2533

Modulation Frequency Characteristics

0
VO

–10

Detection output level (dB)


5 VCC = 8 V
Total harmonic distortion THD (%)

–20
4
–30
3
–40
2
–50
THD
1
–60
0
10 50 100 500 1k 5k 10k
Modulation frequency (Hz)

Signal Meter Output Voltage (Adjustment by Resistor between Pin 9 and GND)

7 51 kΩ
36 kΩ

6
Signal meter output voltage (V)

VCC = 8 V 24 kΩ
fIN = 999 kHz (51 kΩ)
5
AMMOD = 30 % (24 kΩ)
fMOD = 400 Hz 20 kΩ
4

3
12 kΩ

2
6.2 kΩ
(6.2 kΩ)
1
1 kΩ
(1 kΩ)
0 10 20 30 40 50 60 70 80 90 100
Signal input level (dBµV)

Remark Figures in parentheses indicate setting value (resistor between pin 9 and GND) for µPC2533GS-02. A
circuit that restricts output current from pin 9 is mounted on µPC2533GS-02.

26
µPC2533

Receiving Frequency Characteristics

0
(LW band) (MW band) VO
–10

Detection output level VO (dB),


signal-to-noise ratio S/N (dB)
Maximum sensitivity MS (dB µV), 50 –20
usable sensitivity US (dB µV)
40 –30

(LW band)
30 –40
(MW band)
US
20 –50
(LW band) (MW band) S/N
10 –60 MS
(MW band)
(LW band)
0 –70
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Receiving frequency (MHz)

Temperature Characteristics (Signal Meter Voltage vs. Operating Ambient Temperature)

10

9
Signal meter output voltage 2 VS2 (V),
signal meter output voltage 3 VS3 (V)

6
VS3
5

2 VS2

0
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)

27
µPC2533

Temperature Characteristics (Maximum Sensitivity, Usable sensitivity vs. Operating Ambient Temperature)

50

Maximum sensitivity, Usable sensitivity (dBµV)

40

30
Usable
sensitivity

20

Maximum
sensitivity
10

0
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)

Temperature Characteristics (Detection Output Level, Signal-to-Noise Ratio vs. Operating Ambient Temperatue)

200 0

180 –10
Detection output level VO (mVrms)

VO

Signal-to-noise ratio S/N (dB)


160 –20

140 –30

120 –40

100 –50
S/N

80 –60

60 –70

40 –80
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)

28
µPC2533

Temperature Characteristics (THD vs. Operating Ambient Temperatue)

Total harmonic distortion THD (%)


4
Input: 74 dBµV
Modulation factor: 30 %
Input: 74 dBµV
3 Modulation factor: 80 %
Input: 130 dBµV
Modulation factor: 80 %
2

1 THD3
THD1 THD2

0
–40 –20 0 20 40 60 80 100

Operating ambient temperature TA (°C)

29
µPC2533

0.047 µ F
510 Ω

L3 22 Ω SFE10.7MHY-A CFWS450HT
12 µ H 12 µ H 0.047 µ F

47 pF
150 pF 100 pF 2 kΩ
T1 T2
2SC1844
2.2 µF
+ 47 µ F 0.022 µ F 0.022 µ F 4.7 µF
0.022 µ F +
10 µ F 50 Ω 0.022 µ F 50 Ω 0.022
0.022
µF µF
3300 pF + +
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19

2SK1000
RF AGC
driver MIX1 Buff1 MIX2 Buff2

Remark Pin names in parentheses are those of µPC2533GS-02.


L2
L1
MIX2 IF
Dummy RF AGC detection amplifier
AGC
antenna

65 pF AGC
15 pF comparator Signal meter Time constant
selector switch
30 Ω LO/DX IF
AGC

OSC
Buff OSC1 Station detector OSC2 Detector
SG IN SEEK

0.01 µ F 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
5. Measurement Circuit

OSC1 Buff
LO/DX (LO: 3 V or higher; DX: 1 V or lower)

OUT
39
pF 0.01 0.01 µ F
L4 + + (4) (2)
OFF: 0.3 V or lower)

330 pF µF
SEEK (ON: 1.5 V or higher;

15 pF 47 pF
VTUNE 1 µF 10 µ F
RSD1

RSD2
SDIN

51 2.7 kΩ + (1)
100 kΩ kΩ
10.26 MHz 47 µ F
47 pF 0.01 0.047 µ F
µF 5V
0.033 µ F
SD AC OUT

SD ACadj
[SDadj]

T3
SD DCadj
[SMOUT]

SD DC OUT

KV1310 (TOKO, Inc.)


AUDIO OUT
(6) (3)
VCC

30
µPC2533

Coil Specifications (TOKO, Inc.)

Product No. Connection Diagram Prototype No. Specifications

L1 X119FNS-16314Z (1) - (3)


(3) (4) 15T

(2)
L = 4.7 µH
(1) (6) Qu > 60

L2 388DN-1043BS (4) - (6)


(3) (4) 1440T

(2)
L = 100 mH
(1) (6) Qu > 45

L3 247BR-0147Z (1) - (3)


(3) (4) 274T

(2)
L = 2 mH
(1) (6) Qu > 50

L4 392AN - 1871Y (1) - (3) (1) - (2) (2) - (3)


(3) (4) 8T 4T 4T

(2)
L = 1.8 µH
(1) (6) Qu > 70

T1 392AC-1883N (1) - (3) (1) - (2) (2) - (3)


(3) (4) 14T 7T 7T
(4) - (6)
(2)
C = 43 pF 3T
(1) (6) Qu > 50
fO = 10.7 MHz

T2 7PSYC-1779N (1) - (3) (1) - (2) (2) - (3)


(3) (4) 152T 76T 76T
(4) - (6)
(2)
C = 180 pF 40T
(1) (6) Qu > 25
fO = 450 kHz

T3 CX7YCS-8986N (1) - (3) (1) - (2) (2) - (3)


(3) (4) 148T 43T 105T
(4) - (6)
(2)
C = 180 pF 30T
(1) (6) Qu > 40 ±20 %
fO = 450 kHz

• BPF SFE10.7 MHY-A (MURATA mfg. Co., Ltd.)


CFWS450HT (MURATA mfg. Co., Ltd.)

• RF FET 2SK1000 (NEC)

31
µPC2533

6. Package Drawing

36 PIN PLASTIC SSOP (300 mil)

36 19
detail of lead end

1 18
A

H
F
I J
G

C B L
K N S
D M M

NOTE ITEM MILLIMETERS


Each lead centerline is located within 0.10 mm of A 15.3±0.24
its true position (T.P.) at maximum material condition. B 0.97 MAX.
C 0.8 (T.P.)
D 0.37 +0.08
−0.07
E 0.125±0.075
F 1.675+0.125
−0.175
G 1.55
H 7.7±0.3
I 5.6±0.15
J 1.05±0.2

K 0.22 +0.08
−0.07
L 0.6±0.2
M 0.10
N 0.10
R 5°±5°
P36GM-80-300B-4

32
µPC2533

7. Recommended Soldering Conditions

When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our
sales offices.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).

Surface mount device

µPC2533GS-01, 2533GS-02: 36-pin plastic shrink SOP (300 mil)

Process Conditions Symbol

Infrared ray reflow Peak temperature: 235 °C or below (Package surface temperature), IR35-00-2
Reflow time: 30 seconds or less (at 210 °C or higher),
Maximum number of reflow processes: 2 times.

VPS Peak temperature: 215 °C or below (Package surface temperature), VP15-00-2


Reflow time: 40 seconds or less (at 200 °C or higher),
Maximum number of reflow processes: 2 times.

Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120 °C or below (Package surface temperature).

Partial heating method Pin temperature: 300 °C or below, –

Heat time: 3 seconds or less (Per each side of the device).

Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or
the device will be damaged by heat stress.

33
µPC2533

[MEMO]

34
µPC2533

[MEMO]

35
µPC2533

[MEMO]

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5

34

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