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µPC2533
AM TUNER FOR ELECTRONIC TUNING CAR RADIOS
The µPC2533 is an IC developed as an AM tuner for car stereos and car radios.
It employs an up-conversion type double super-heterodyne configuration (IF1 = 10.71 MHz, IF2 = 450 kHz).
The internal configuration consists of the MIX1 block (MIX1, OSC1, Buff1), MIX2 block (MIX2, OSC2, Buff2), IF
amplifier, detection circuit, AGC circuit, signal meter circuit, SD (station detector) circuit, and Lo/DX (short range/long
range) circuit.
Features
• Possible to select stations using only one varactor diode with narrow variable capacitance range
• Tracking adjustment unnecessary
• Coil switching between LW (long wave) and MW (middle wave) unnecessary
• Less sensitivity deviation due to tracking error
• High S/N: 60 dB
• Signal meter output with good linearity
• Signal meter output voltage inclination setting possible by external resistor.
• Can be used with IF (intermediate frequency) counter turning system or high/low tuning system.
µPC2533GS-01 Set by pin No. 7 Set by pin No. 9 Depends on SD SD sensitivity of IF counter
sensitivity setting system and high/low system
can be set independently.
µPC2533GS-02 Set by pin No. 7 Set by pin No. 9 Tilt of the signal meter
voltage can be set without
regard to SD sensitivity.
Document No. S11989EJ4V0DS00 (4th edition) The mark shows major revised points.
Date Published August 1998 N CP(K)
Printed in Japan
© 1993
µPC2533
Ordering Information
IF AGC T.C.
MIX1OUT
MIX1OUT
Buff1OUT
MIX2OUT
MIX2OUT
Buff2OUT
RF AGC1
RF AGC2
MIX1BYP
MIX2BYP
MIX1IN
Buff1IN
MIX2IN
Buff2IN
IF2IN
GND
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
RF AGC
MIX 1 Buff 1 MIX 2 Buff 2
driver
RF AGC MIX 2
detector AGC
IF
amplifier
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
OSC1 Buff
SD ACadj [SDadj]
ALC
Vref1
LO/DX
SEEK
SD ACOUT
SD IFIN
SD DCadj [SMOUT]
SD DCOUT
OSC2 (B)
OSC2 (E)
Vref2
MIX2AGC T.C.
VO (AF)
GND
VCC
IF2OUT
2
µPC2533
ALC 2 35 RF AGC2
LO/DX 4 33 MIX1IN
SEEK 5 32 MIX1OUT
SD ACOUT 6 31 MIX1OUT
SD IFIN 8 29 Buff1IN
SD DCOUT 10 27 Buff1OUT
Vref 2 13 24 MIX2OUT
VO (AF) 15 22 Buff2IN
GND 16 21 Buff2OUT
IF2OUT 18 19 IF2IN
Remark µPC2533GS-02 pin names are in parentheses. Pins not in parentheses are used in both the
µPC2533GS-01 and µPC2533GS-02.
3
µPC2533
1. Pin Description
Names and symbols in parentheses indicate pin names for µPC2533GS-02. Names and symbols not in
parentheses are pin names used in both the µPC2533GS-01 and µPC2533GS-02.
(1/7)
Pin No. Symbol Name Equivalent Circuit
ZO = 30 Ω ±20 %
5 kΩ
5
60 kΩ
4
µPC2533
(2/7)
Pin No. Symbol Name Equivalent Circuit
6 SD ACOUT SD AC output
RO = 20.5 kΩ ±20 %
500 Ω
6
20 kΩ
5 kΩ
5.2 V
5 kΩ
8 SD IFIN SD IF input
Vref
60 kΩ
500 Ω
5
µPC2533
(3/7)
Pin No. Symbol Name Equivalent Circuit
5 kΩ
VCC
5.2 V
5 kΩ
ZO = 240 Ω ±20 %
12
6
µPC2533
(4/7)
Pin No. Symbol Name Equivalent Circuit
ZO = 300 Ω ±20 %
15
20
15
RT
20
RT = 100 kΩ ±20 %
7
µPC2533
(5/7)
Pin No. Symbol Name Equivalent Circuit
21
22
ZIN = 30 kΩ ±20 %
23 26
23 26
27
ZO = 330 Ω ±20 %
8
µPC2533
(6/7)
Pin No. Symbol Name Equivalent Circuit
29
ZIN = 15 kΩ ±20 %
33 30
Vref
33 30
34
ZO = 12 kΩ ±20 %
9
µPC2533
(7/7)
Pin No. Symbol Name Equivalent Circuit
ZO = 11 kΩ ±20 %
35
36
ZO = 22 kΩ ±20 %
10
µPC2533
VCC
R1
C8 LPF
L3 R2 C6
L4 L5
33
MIX1
Q1 C3 C4 C5 30
+
From MIX2
Q2 C9 C7
L1
35
L2
C1 36 RF AGC LO/DXNote
34
C2 +
4
Note LO : 3 V or higher
DX : 1 V or lower
In the AM band, the capacitance of a car radio antenna depends on its length, diameter, cable length, etc. Therefore,
J-FET is used in the µPC2533 to raise RF input impedance.
Since the µPC2533 raises the first IF (intermediate frequency) to 10.71 MHz, there is no need for a tuning circuit
between the RF amplifier circuit and MIX1. Instead, it employs an LPF (about 6 MHz) consisting of L4, L5 and C3
to C5 between the RF amplifier circuit and MIX1 in order to cut image frequency (21.4 MHz or higher). Because this
allows a wide-band RF amplifier circuit to be configured without using a tuning circuit, frequency sensitivity deviation
can be minimized to a high degree.
The AGC circuit consists of RF AGC1 by the PIN diode connected to the FET gate and RF AGC2 by the cascade
transistor Q1. Use a low-noise transistor even with low current for the cascade transistor Q1 (if a high-noise one is
used, the S/N ratio deteriorates).
11
µPC2533
T1
VT
To 10.7 MHz
BPF
VCC
+
2 3 31 32 17 29 27
Q101 Q104
R112
Q102 Q103
Buff1
R11
Bias circuit
OSC1 Note
Q105 R111
Q109 Q108
Q106 Q107 R109
1
R110
R107 R108
28
30
Note Output impedance and input impedance of Buff1 are 330 Ω and 15 kΩ, respectively.
12
µPC2533
VCC Xtal
Note To IF amplifier
From 10.7 MHz BPF
+
28 23 17 24 25 14 13 12 11 22 21
R209
R207 R208
Note Output impedance and input impedance of Buff2 are 2 kΩ and 30 kΩ, respectively.
13
µPC2533
R412
Q401
Bias circuit
R405
Q405
36 35 34
To RF amplifier
circuit (Fig. 2-1) +
The configuration of the RF AGC is shown in Fig. 2-4. After being detected by the RF AGC detector and added,
the input signal from MIX1 and MIX2 is smoothed by external capacitor of pin 34, and its DC voltage controls the RF
AGC.
RF AGC output controls the PIN diode from pin 36 and controls base voltage of cascade transistor which determines
FET VDS from pin 35. In addition, by detecting sudden fluctuation of pin 34 voltage and switching over time constants,
RF AGC response convergence when the electric field suddenly changes is improved.
Operation start time of the RF AGC can be delayed slightly by connecting a resistor parallel to the external capacitor
of pin 34.
14
µPC2533
R19 T3
From 450kHz BPF To SD circuit
+
C19
19 18 VCC
17
IF amp
–
Bias circuit
Q301
R301 R302
+ Q302
15 Audio
output
R303 R304
In the IF amplifier block, DC feedback is carried to pin 19 via an external low pass filter (composed of T3 and C19)
from pin 18, an output pin. The DC electric potential of pin 18 is designed to be fixed approximately equal to the (+)
side input of the IF amplifier. The value of R19 is the input impedance, so impedance matching to 450 kHz ceramic
filter is possible.
The output signal current of the IF amplifier is converted to signal voltage by being resonated by T3 and input to
the detection circuit after frequency selection.
Emitter follower detection by Q302 is adopted for the detection circuit block.
15
µPC2533
R501 R502
Voltage
5 kΩ 5 kΩ
limiter
R501 R502
To SD circuit
5 kΩ 5 kΩ
(Fig. 2-7)
From SD circuit
(Fig. 2-7)
7 9 20
+
IF AGC block configuration is shown in Fig. 2-6. The signal detected from pin 15 is smoothed by the capacitor
of pin 20, and its DC voltage controls the IF AGC.
The IF AGC controls the IF amplifier and MIX2. In the operation sequence, it first controls the gain of the IF amplifier,
then controls the gain of MIX2.
The signal meter circuit output (current output) is in proportion to the DC voltage smoothed by pin 20, and converted
to voltage by the external resistor of pin 7 or 9. Therefore, output voltage value and gain can be set by the value of
Note
the external resistor.
Note For relation between the external resistor and the signal meter, refer to Signal meter output voltage
(adjustment by resistor between pin 9 and GND) in section 4. Characteristic Curves.
16
µPC2533
ON/OFF
+ Detection comparator 1
–
1.0 V
Bias circuit
Bias circuit
+ Detection comparator 2
–
1.0 V
–
+
From signal meter
circuit (Fig. 2-6) To time constant
switchover circuit
(Fig. 2-6)
10 5 6 8
The configration station detector (SD) circuit block is shown in Fig. 2-7.
The SD circuit stops scanning or seeking when a broadcast wave is received when auto scanning or seek tuning.
Since the µPC2533 has two outputs (DC high/low signal (open collector) and AC IF signal (f = 450 kHz)), it can be
used according to DTS (digital tuning system) type. Input the SD request signal from DTS to pin 5.
The SD sensitivity setting methods of the µPC2533GS-01 and µPC2533GS-02 differ.
With the µPC2533GS-01, SD sensitivities in the IF counter output system and in the high/low output system are
set by external resistor between pin 7 and GND and by external resistor between pin 9 and GND.
With the µPC2533GS-02, SD sensitivities in both the IF counter output system and high/low output system are set
by external resistor between pin 7 and GND (refer to Fig. 2-6).
Value of Resistor between Pin 9 or Pin 7 and GND SD Sensitivity (AC, DC)
51 kΩ 27 dBµV
24 kΩ 29 dBµV
10 kΩ 33 dBµV
17
µPC2533
The reference voltage of the µPC2533-01 and µPC2533-02 detection comparator has been internally fixed at
1.0 V.
Under the influence of R501 (5 kΩ) and R502 (5 kΩ) of the siganl meter circuit (Fig. 2-6), signal meter output voltage
and detection comparator input voltage do not perfectly coincide. For SD sensitivity setting, refer to the following
formula.
R501
Signal meter output voltage × (1 + )
Value of resistor between pin 7 and GND
Remark Because DC output is open-collector type (Active high), connect pull-up resistor to pin 10 to use.
18
µPC2533
3. Electical Characteristics
Caution Exposure to Absolute Maximum Ratings for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
The device should be operated within the limits specified under DC and AC Characteristics.
Electrical Characteristics
(Unless specified, TA = 25 °C, VCC = 8 V, fIN = 999 kHz, fMOD = 400 Hz, AMMOD = 30 %, RSD1 (resistor between pin
7 and GND) = RSD2 (resistor between pin 9 and GND) = 24 kΩ, 15-pin measurement load = 100 kΩ)
Total harmonic distortion 3 THD3 VIN = 130 dBµV, AMMOD = 80 % – 0.7 1.5 %
Signal meter output voltage 2 VS2 VIN = 30 dBµV 0.5 1.5 2.5 V
Signal meter output voltage 3 Note VS3 VIN = 74 dBµV 4.8 5.5 6.7 V
(4.3) (5.0) (5.5)
Local buffer output 1 VOSC 1-pin load: 20 pF or less 106 110 114 dBµV
Note Specifications in parentheses for signal meter output voltage 3 are for µPC2533GS-02. Values of other items
are the same for µPC2533GS-01 and µPC2533GS-02.
19
µPC2533
Reference Characteristics
S/D output time T-SD Delay time from the time when 0 5 25 ms
changing SEEK VIN = 0 → 40
dBµV to the time when pin 10
voltage becomes 4.8 V or more
20
µPC2533
4. Characteristic Curves
VO
0
MS (VO =
Detection output level VO (dB), Noise (dB)
7 VCC = 8 V
–10 dB) fIN = 216 kHz
–10 fMOD = 400 Hz
US (at S/N=20 dB)
6 AMMOD = 30 %
(µ PC2533GS-01) RSD1 = RSD2 = 24 kΩ
–20
5 Signal meter voltage
–30 (µ PC2533GS-02)
4
–40
3
–50
Noise
2
–60
1 THD 30 %
–70
THD 80 %
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
MS = 12.5 dB µ V US = 28 dB µ V
21
µPC2533
VO
0
VCC = 8 V
–20 fIN = 999 kHz
fMOD = 400 Hz
–30 AMMOD = 30 %
RSD1 = RSD2 = 24 kΩ
–40
Noise
–50
–60
–70
VO
Detection output level VO (dB), Noise VN (dB)
0
VO VCC = 8 V
fIN = 999 kHz
–10 fMOD = 400 Hz
29 dB AMMOD = 30 %
RSD1 = RSD2 = 24 kΩ
–20
–30
–40
LO/DX low
LO/DX high VN
–50
–60
VN
–70
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Signal input level (dBµ V)
22
µPC2533
Desired:
0 V = 100 dBµ V
80 dBµV
–10 40 dBµ V 45 dBµ V
VCC = 8 V
–30 Desired:
V = 40 dBµV
–40 45 dBµ V
60 dBµ V
–50
100 dBµV
80 dBµ V
–60
Desired: 400 Hz 30% modulation; interference: non-modulation
Desired: non-modulation; interference: 400 Hz 30% modulation
Desired: non-modulation; interference: non-modulation
50 60 70 80 90 100 110 120 130 140
Interference signal input level (dBµV)
Cross-Modulation Characteristics (40 kHz Detuning, FET Load 255 Ω) (Reference Only)
Desired:
0 V = 100 dBµ V
80 dBµ V
–10
Detection output level VO (dB)
45 dBµV 60 dBµV
40 dBµV
–20
VCC = 8 V
Desired:
–30 Desired: f = 999 kHz
Interference:
V = 40 dBµV
f = 1039 kHz
–40 45 dBµ V
–50 65 dBµ V
23
µPC2533
Desired:
0 V = 100 dBµ V
80 dBµ V
VCC = 8 V
–10 Desired: f = 999 kHz 40 dBµ V
60 dBµV
–30 Desired:
V = 40 dBµV
–40
60 dBµ V
–50
100 dBµV
80 dBµ V
–60
Desired: 400 Hz 30% modulation; interference: non-modulation
Desired: non-modulation; interference: 400 Hz 30% modulation
Desired: non-modulation; interference: non-modulation
50 60 70 80 90 100 110 120 130 140
Interference signal input level (dBµV)
VO
0
Recommended
operating range
Maximum sensitivity MS (dB µV), usable sensitivity
–10 6
40 –30 4
SS
30 –40 3
US
20 –50 2
VS2
MS
10 –60 1
S/N
THD 80 %
THD 30 %
0
6 7 8 9 10
Power supply voltage (V)
24
µPC2533
600
VCC = 8 V
fIN = 999 kHz
500
400
2 200
1 100
THD
0 0
20 40 60 80 100
Modulation factor (%)
90
80
70
Signal input level (dBµV)
60
50
40
30
20
10
–15 –10 –5 0 5 10 15
Detuning frequency (kHz)
25
µPC2533
0
VO
–10
–20
4
–30
3
–40
2
–50
THD
1
–60
0
10 50 100 500 1k 5k 10k
Modulation frequency (Hz)
Signal Meter Output Voltage (Adjustment by Resistor between Pin 9 and GND)
7 51 kΩ
36 kΩ
6
Signal meter output voltage (V)
VCC = 8 V 24 kΩ
fIN = 999 kHz (51 kΩ)
5
AMMOD = 30 % (24 kΩ)
fMOD = 400 Hz 20 kΩ
4
3
12 kΩ
2
6.2 kΩ
(6.2 kΩ)
1
1 kΩ
(1 kΩ)
0 10 20 30 40 50 60 70 80 90 100
Signal input level (dBµV)
Remark Figures in parentheses indicate setting value (resistor between pin 9 and GND) for µPC2533GS-02. A
circuit that restricts output current from pin 9 is mounted on µPC2533GS-02.
26
µPC2533
0
(LW band) (MW band) VO
–10
(LW band)
30 –40
(MW band)
US
20 –50
(LW band) (MW band) S/N
10 –60 MS
(MW band)
(LW band)
0 –70
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Receiving frequency (MHz)
10
9
Signal meter output voltage 2 VS2 (V),
signal meter output voltage 3 VS3 (V)
6
VS3
5
2 VS2
0
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)
27
µPC2533
Temperature Characteristics (Maximum Sensitivity, Usable sensitivity vs. Operating Ambient Temperature)
50
40
30
Usable
sensitivity
20
Maximum
sensitivity
10
0
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)
Temperature Characteristics (Detection Output Level, Signal-to-Noise Ratio vs. Operating Ambient Temperatue)
200 0
180 –10
Detection output level VO (mVrms)
VO
140 –30
120 –40
100 –50
S/N
80 –60
60 –70
40 –80
–40 –20 0 20 40 60 80 100
Operating ambient temperature TA (°C)
28
µPC2533
1 THD3
THD1 THD2
0
–40 –20 0 20 40 60 80 100
29
µPC2533
0.047 µ F
510 Ω
L3 22 Ω SFE10.7MHY-A CFWS450HT
12 µ H 12 µ H 0.047 µ F
47 pF
150 pF 100 pF 2 kΩ
T1 T2
2SC1844
2.2 µF
+ 47 µ F 0.022 µ F 0.022 µ F 4.7 µF
0.022 µ F +
10 µ F 50 Ω 0.022 µ F 50 Ω 0.022
0.022
µF µF
3300 pF + +
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
2SK1000
RF AGC
driver MIX1 Buff1 MIX2 Buff2
65 pF AGC
15 pF comparator Signal meter Time constant
selector switch
30 Ω LO/DX IF
AGC
OSC
Buff OSC1 Station detector OSC2 Detector
SG IN SEEK
0.01 µ F 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
5. Measurement Circuit
OSC1 Buff
LO/DX (LO: 3 V or higher; DX: 1 V or lower)
OUT
39
pF 0.01 0.01 µ F
L4 + + (4) (2)
OFF: 0.3 V or lower)
330 pF µF
SEEK (ON: 1.5 V or higher;
15 pF 47 pF
VTUNE 1 µF 10 µ F
RSD1
RSD2
SDIN
51 2.7 kΩ + (1)
100 kΩ kΩ
10.26 MHz 47 µ F
47 pF 0.01 0.047 µ F
µF 5V
0.033 µ F
SD AC OUT
SD ACadj
[SDadj]
T3
SD DCadj
[SMOUT]
SD DC OUT
30
µPC2533
(2)
L = 4.7 µH
(1) (6) Qu > 60
(2)
L = 100 mH
(1) (6) Qu > 45
(2)
L = 2 mH
(1) (6) Qu > 50
(2)
L = 1.8 µH
(1) (6) Qu > 70
31
µPC2533
6. Package Drawing
36 19
detail of lead end
1 18
A
H
F
I J
G
C B L
K N S
D M M
K 0.22 +0.08
−0.07
L 0.6±0.2
M 0.10
N 0.10
R 5°±5°
P36GM-80-300B-4
32
µPC2533
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our
sales offices.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Infrared ray reflow Peak temperature: 235 °C or below (Package surface temperature), IR35-00-2
Reflow time: 30 seconds or less (at 210 °C or higher),
Maximum number of reflow processes: 2 times.
Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120 °C or below (Package surface temperature).
Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or
the device will be damaged by heat stress.
33
µPC2533
[MEMO]
34
µPC2533
[MEMO]
35
µPC2533
[MEMO]
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
34