MCC95-12io1B

Thyristor Module VRRM = 2x 1200 V

I TAV = 116 A
VT = 1.28 V

Phase leg

Part number

MCC95-12io1B

Backside: isolated

3 1 2
6 7 5 4

Features / Advantages: Applications: Package: TO-240AA

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 3600 V~
● Planar passivated chip ● Softstart AC motor control ● Industry standard outline
● Long-term stability ● DC Motor control ● RoHS compliant
● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting
● AC power control ● Base plate: DCB ceramic
● Lighting and temperature control ● Reduced weight
● Advanced power cycling

Terms and Conditions of Usage

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved

 MCC95-12io1B

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 200 µA
VR/D = 1200 V TVJ = 125°C 5 mA
VT forward voltage drop I T = 150 A TVJ = 25°C 1.29 V
I T = 300 A 1.50 V
I T = 150 A TVJ = 125 °C 1.28 V
I T = 300 A 1.70 V
I TAV average forward current TC = 85 °C T VJ = 125 °C 116 A
I T(RMS) RMS forward current 180° sine 182 A
VT0 threshold voltage TVJ = 125 °C 0.85 V
for power loss calculation only
rT slope resistance 2.4 mΩ
R thJC thermal resistance junction to case 0.22 K/W
RthCH thermal resistance case to heatsink 0.20 K/W
Ptot total power dissipation TC = 25°C 455 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 2.25 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.43 kA
t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.92 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 2.07 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 25.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 24.6 kA²s
t = 10 ms; (50 Hz), sine TVJ = 125 °C 18.3 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 17.7 kA²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 119 pF
PGM max. gate power dissipation t P = 30 µs T C = 125 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 250 A 150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 116 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 125°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 2.5 V
TVJ = -40 °C 2.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA
TVJ = -40 °C 200 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 125°C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 µs TVJ = 25 °C 450 mA
IG = 0.45 A; di G /dt = 0.45 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.45 A; di G /dt = 0.45 A/µs
tq turn-off time VR = 100 V; I T = 150 A; V = ⅔ VDRM TVJ =100 °C 185 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved

 MCC95-12io1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 125 °C
T op operation temperature -40 100 °C
Tstg storage temperature -40 125 °C
Weight 81 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 3600 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 3000 V

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MCC95-12io1B MCC95-12io1B Box 36 458163

Similar Part Package Voltage class

MCMA110P1200TA TO-240AA-1B 1200
MCMA140P1200TA TO-240AA-1B 1200

Equivalent Circuits for Simulation * on die level T VJ = 125 °C

I V0 R0 Thyristor

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 1.2 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved

 MCC95-12io1B

Outlines TO-240AA

3 1 2
6 7 5 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved

 MCC95-12io1B

Thyristor
300 2000 105
50 Hz, 80% VRRM VR = 0 V

250

200 1600
IT ITSM 2 TVJ = 45°C
TVJ = 45°C It
150 104 TVJ = 140°C
[A] TVJ = 125°C [A] [A2s]
100 140°C 1200
TVJ = 140°C

50
TVJ = 25°C
0 800 103
0.5 1.0 1.5 2.0 0.01 0.1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
Fig. 2 Surge overload current 2
Fig. 1 Forward characteristics Fig. 3 I t versus time (1-10 s)
ITSM: crest value, t: duration
tp = 30 µs
tp = 500 µs
100 100.0 200
PGM = 120 W, tP = 30 µs
60 W, tP = 500 µs
PGAV = 8 W dc =
160 1
TVJ = 125°C 0.5
10 10.0 0.4
0.33
VG tgd ITAVM120 0.17
0.08
[V] [μs] lim. [A] 80
1 1.0
typ.
IGT (TVJ = -40°C)
125°C

25°C

IGT (TVJ = 0°C)

40
IGT (TVJ = 25°C)
IGD
0.1 0.1 0
0.01 0.1 1 10 0.01 0.10 1.00 10.00 0 40 80 120 160
IG [A] IG [A] Tcase [°C]
Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at
case temperature

250 0.24

dc = RthHA 0.20
200 1
0.1
Ptot 0.5
0.2 0.16
0.4
0.4
150 0.33 ZthJC
0.6
[W] 0.17
0.8 0.12
0.08
1.0
100 [K/W]
0.08 i Rthi (K/W) ti (s)
1 0.0073 0.0001
50 2 0.0128 0.0031
0.04 3 0.1329 0.084
4 0.067 0.42
0 0.00
0 40 80 120 160 0 40 80 120 160 1 10 100 1000 10000
IT(AV) [A] Tamb [°C] t [ms]

Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance junction to case
Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved

 MCC95-12io1B

Thyristor
1200
Circuit
W3 RthKA K/W
1000 3x MCC95 or 0.03
3x MCD95 0.06
0.08
800 0.12
0.15
Ptot 0.3
600 0.5

[W]
400

200

0
0 50 100 150 200 250 0 50 100 150
IRMS [A] Ta [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature

0.30
RthJC for various conduction angles d:

0.25 d RthJC [K/W]

DC 0.22
0.20 180° 0.23
30°
120° 0.25
60°
ZthJC 120° 60° 0.27
0.15 180° 30° 0.28
DC
[K/W]
0.10 Constants for ZthJC calculation:
i Rthi [K/W] ti [s]
0.05 1 0.0066 0.0019
2 0.0678 0.0477
0.00 3 0.1456 0.3440
10-3 10 -2 10 -1 10 0 10 1 10 2
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

0.5 RthJK for various conduction angles d:

d RthJK [K/W]
0.4 DC 0.42
30°
180° 0.43
60°
120°
120° 0.45
ZthJK 0.3 180° 60° 0.47
DC 30° 0.48

[K/W] 0.2 Constants for ZthJK calculation:

i Rthi [K/W] ti [s]
0.1 1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.3440
0.0
4 0.2000 1.3200
10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3

t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20161222c

© 2016 IXYS all rights reserved