Electronics I (EECE 3110)

Lab 5
Version: EECE_3110_2017_Rev_B

MOSFETs

Objective:

o Investigate MOSFET Characteristics and Applications

Test Equipment Required:

o 1 Breadboard
o 1 Dual Power Supply (+/12 V minimum)
o 1 DMM Bench-top
o 1 DMM Hand-held
o 1 Analog Discovery or Analog Discovery 2
o 1 Bench “Shoebox” containing cables and other test components
o Personal USB Drive (Student supplied)

Materials (Components)

o 1 1 kΩ Resistor
o 1 3.9 kΩ Resistor
o 1 5.6 kΩ Resistor
o 1 6.2 kΩ Resistor
o 1 39 kΩ Resistor
o 1 56 kΩ Resistor
o 1 1 µF Capacitor
o 1 10 µF Capacitor
o 1 2N7000 n-channel MOSFET (or MOSFET assigned by the instructor)
o 1 2N3904 npn Transistor
o 1 LED

WARNINGS AND PRECAUTIONS

1. Never install or remove components from an energized circuit or equipment

2. Do not construct circuits while energized

3. Follow electrical safety precautions

4. KEEP THE MOSFET DRAIN CURRENT UNDER 200 mA. DO NOT USE THE POWER
BRICK TO PROVIDE POWER/CURRENT TO THE DRAIN OR SOURCE OF THE
MOSFET. USE THE POWER SUPPLY ON THE BENCH AND SET THE CURRRENT
LIMIT TO 200 mA (0.2 A) FOR ALL PARTS. When using the Analog Discovery, the
PowerBRICK is limited to 100 mA output.

Background Information

Field-effect transistors (FETs) are three terminal devices that operate as voltage controlled current
source: varying the voltage on the gate terminal will vary the current through the drain and source

Page 1 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

terminals. FETs work on an entirely different principle than BJTs (Bipolar Junction Transistors),
which you will be looking at in an upcoming lab. Enhancement MOSFETs (Metal Oxide
Semiconductor FET) are probably the most prolific semiconductor device around today. Modern CPUs
contain roughly 1 billion of these devices. Flash memory and RAM are also based on the MOSFET
structure. Enhancement MOSFETS are normally off devices: the device is non-conducting between the
drain and source until the voltage at the gate exceeds the threshold voltage.

NOTE: The MOSFET threshold voltage is NOT the diode threshold voltage, nor is it the
thermal voltage.

Figure 1: 2N7000 n-channel MOSFET

The device investigated in this lab will be the 2N7000 enhancement n-channel MOSFET. The pin out
is shown in Figure 1. The first part of this lab investigates the threshold voltage of the MOSFET.
The characteristic curves for a FET will be examined in part 2. The characteristic curve is a plot of
drain source voltage as a function of drain current for a given gate source voltage, and is a very
important tool for characterizing the device.
The final part of is introduces a circuit that uses the ohmic region (also known as the triode region) of
the MOSFET as a variable resistor to control the gain of a basic BJT amplifier. The ohmic region is
near VDS = 0, and in fact for the circuit you will test, the operating point is set at VDS = 0 by connecting
a capacitor in series with the drain.

Pre-Lab Preparation

1. Ability to Log into Blackboard

2. If a “hard” copy of the lab is required, download from Blackboard and print prior to the start of the
lab
3. Read this lab and perform all required reference readings along with constructing the appropriate
tables in your lab notebook
4. Perform all calculations PRIOR TO arriving in the lab
5. From the Blackboard library, locate the Fairchild 2N7000 n-channel enhancement MOSFET data
sheet

a. Write down the range of values for the threshold voltage (VGS(TH) on the data sheet) in your
laboratory notebook

b. What is the range of values of kn? Derive the values of kn by using the following formulas:

Page 2 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

1
𝐼𝐼𝐷𝐷 = 𝑘𝑘𝑛𝑛 (𝑉𝑉𝐺𝐺𝐺𝐺 − 𝑉𝑉𝑡𝑡 )2
2

2 ⋅ 𝐼𝐼𝐷𝐷
𝑘𝑘𝑛𝑛 =
(𝑉𝑉𝐺𝐺𝐺𝐺 − 𝑉𝑉𝑡𝑡 )2

using VGS= 4.5 V, and ID= 75 mA

Procedure

IMPORTANT: To gain proficiency with the bench top lab equipment, the Analog Discovery, and the DMM
Hand-held, you must ensure that approximately half of this lab is accomplished with the bench top
equipment and the other half is performed using the Analog Discovery and the DMM Hand-held. Your lab
notebook and lab report must identify which test equipment is used to accomplish each section of
the lab.

NOTE 1: When the Analog Discovery is used outside of the lab (prior approval required by the TA or
Instructor) in performance of any portion of this lab, take photographs of your setup and include them in
your lab report.

NOTE 2: Throughout this procedure, use MATLAB to perform the required calculations and producing plots
and graphs.

1) MOSFET Threshold Voltage:

NOTE: If the Analog Discovery and/or hand held meter are used to perform this section outside
of the lab (prior approval required by the TA or Instructor), take photographs of your setup
and include them in your lab report.

Figure 2: First circuit to measure the threshold voltage

a. Using the MOSFET provided, construct the circuit shown in Figure 2. Use the signal
generator from the Analog Discovery or oscilloscope to generate the DC gate voltage.
Start with VGS at 0 V and VDS at 4 V. VDS is the bench power supply. AGAIN, SET THE
CURRENT LIMIT TO 200 mA (0.2 A). Slowly increase the gate voltage until the LED
Page 3 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

glows brightly. This is the threshold voltage.

b. Construct the circuit shown in Figure 3. VIN is different if you use the function generator
in the oscilloscope or the Analog Discovery. Refer to Table 1 for the settings.

Table 1: Settings for Part 1) b.

Analog Discovery Oscilloscope
Triangle Wave Ramp Wave
Amplitude: 2.5 V Amplitude: 5 Vpp
Offset: 2.5 V Offset: 2.5 V
Frequency: 100 Hz Frequency: 100 Hz
Symmetry: 100% Symmetry 100%

c. Apply channel 1 to VIN and channel 2 to VOUT. Change the display to x-y mode. The
displayed curve should look like Figure 4. The value of VIN where VOUT decreases from 5 V
is the threshold voltage. Include this plot in your report

Figure 3: Second circuit to measure the threshold voltage

Page 4 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

Figure 4: Transfer function of the circuit in Figure 3

d. QUESTION - How do the values of the threshold voltage in parts 1(a) and 1(c) compare?

QUESTION - Do these values fall within the specifications?

e. PRIOR TO DISASSEMBLY, have a TA or the instructor verify proper operation of your

circuit. The TA or Instructor shall initial in your Notebook. If the Analog Discovery
and/or DMM Hand-held are used to perform this section outside of the lab (prior
approval required by the TA or Instructor), take photographs of your setup and
include them in your lab report.

2) MOSFET Characteristic Curve:

NOTE: If the Analog Discovery and/or hand held meter are used to perform this section outside
of the lab (prior approval required by the TA or Instructor), take photographs of your setup
and include them in your lab report.

Figure 5: Circuit used to measure the MOSFET characteristic curve

Page 5 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

a. Using the 2N7000 MOSFET, construct the circuit shown in Figure 5.

Start with VGS = 1.5 V and VDS at 0 V. Connect an ammeter as shown.

Increase VDS to 1 V in 0.1 V intervals, and measure ID at each point. Put this information
in your laboratory notebook.

b. Repeat 2.a. with VGS = 1.8 V, 2.1 V, and 2.4 V. Record ID.

c. For the last value (VGS = 2.4 V, VDS = 1.0 V), find the current going into the gate. Does this
value make sense?

d. Plot the data using MATLAB. The plot should look like the plot in Figure 6.

e. Find kn using the data. How does this number compare to the values found in the prelab?

Figure 6 - Characteristic Curves of the 2N7000

f. PRIOR TO DISASSEMBLY, have a TA or the instructor verify proper operation of your

circuit. The TA or Instructor shall initial in your Notebook. If the Analog Discovery
and/or DMM Hand-held are used to perform this section outside of the lab (prior
approval required by the TA or Instructor), take photographs of your setup and

Page 6 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

include them in your lab report.

3) MOSFET as a Voltage-Controlled Resistor (Voltage Control of Gain):

NOTE: If the Analog Discovery and/or hand held meter are used to perform this section outside
of the lab (prior approval required by the TA or Instructor), take photographs of your setup
and include them in your lab report.

a. Measure and record the values of the resistors listed in Table 2.

Table 2 – Resistor Measurements (Part 3)

Resistor RB1 RB2 RC RE

Listed Value 56 kΩ 39 kΩ 1 kΩ 3.9 kΩ
Measured Value

b. A MOSFET can function as a voltage controlled resistor, which is useful in a variety of

circuits. Figure 7 shows a BJT amplifier with a MOSFET used for gain control. The
MOSFET is operating in the ohmic region and provides an ac resistance path to ground in
the emitter circuit. To analyze the circuit, start with the dc values.

Figure 7 – Circuit for Part 3

c. Construct the amplifier shown in Figure 7. Use the MOSFET assigned. The signal
generator should be turned off and VG is set to a minimum (0 V). Measure and record the
dc voltages listed in Table 3.

Page 7 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

Table 3 – DC Voltages

DC Quantity VB VE IE VC VCE=VC-VE
Computed Value 4.92 V 4.22 V 10.89 V
Measured Value

d. When the MOSFET is on (VGS ≥ VT) and for small values of VDS the MOSFET acts variable
resistor, dependent on the voltage on the gate. Set your function generator for a signal
level of 40 mVpp at 10 kHz sine wave. Adjust VG from 1.0 to 2.0 V in 0.1 volt intervals and
measure vout. Ensure that you are using AC coupling. Use the measured output voltage to
determine the measured gain. The gain is defined as:

𝑣𝑣𝑜𝑜𝑜𝑜𝑜𝑜
𝐴𝐴𝑉𝑉 =
𝑣𝑣𝑠𝑠

Create a table listing how the gain changes for different values of VG.

e. PRIOR TO DISASSEMBLY, have a TA or the instructor verify proper operation of your

circuit. The TA or Instructor shall initial in your Notebook. If the Analog Discovery
and/or DMM Hand-held are used to perform this section outside of the lab (prior
approval required by the TA or Instructor), take photographs of your setup and
include them in your lab report.

4) Design Challenge:

a. Will be issued in a future revision of this lab.

SUMMARY:

We have had our first look at the MOSFET, first by looking at its characteristics, and then we looked at
several applications.

Lab Notebook Requirements:

1) Ensure that you have recorded all the data requested during the lab in your lab notebook as well
as your lab report.

Lab Report:

1) Use the course required format.

Page 8 of 9
 Electronics I (EECE 3110)
Lab 5
Version: EECE_3110_2017_Rev_B

Lab Questions:

1) See questions throughout this lab.

2) You measured the drain current rather than the source current in this lab. What is the difference between
the source current and the drain current?

References:

1) Recitation textbook
2) This lab was developed from:
Buchla, D. M. (2008). Laboratory Exercises for Electronic Devices. (8th ed.). Pearson, NJ

Horowitz, P. (2015). The Art of Electronics. (3rd ed.). Cambridge University Press, NY

Hayes, T. C. (2002). Student Manual for The Art of Electronics. Cambridge University
Press, NY

Page 9 of 9