Professional Documents
Culture Documents
2018(Even)
Time : 3 Hrs. Sem.- I/II
EEE
Full Marks : 80
Pass Marks : 26
PTO
02104/01204/P01204 2 3 02104/01204/P01204
GROUP A
(i)
PTO
02104/01204/P01204 4 5 02104/01204/P01204
(v) The resistance of a wire varies inversely as (vii) In a d.c generator, the generateed emf is
(a) area of cross-section inversely proportional to the
3R
R/6
PTO
02104/01204/P01204 6 7 02104/01204/P01204
6R (x) (H)
R/3 (B)
(ix) Transformers are rated in KVA instead of kw B oH / r
because B rH / o
(a) Load power factor is often not known B H
(b) Total transformer loss depends on volt- B H / o r
ampere (xi) An alternating voltage of frequency 50 Hz and
(c) KVA is fixed whereas kw depends on load maximum value of 250v is expressed as
p.f
(a) V 250sin 628t
(d) None of these
(b) V 250 2 sin 314t
(ix)
(c) V 250sin 314t
(d) V 250 2 sin157t
(xi)
V 250sin 628t
V 250 2 sin 314t
V 250sin 314t
V 250 2 sin157t
(x) The magnetising force (H) and magnetic flux
(xii) Voltmeter is always connected in
density (B) are related by
(a) B oH / r (a) Parallel
(b) B rH / o (b) Series
(c) B H (c) Both (a) & (b)
(d) B H / o r (d) None of the above
PTO
02104/01204/P01204 8 9 02104/01204/P01204
(xii) AND
NOR
(xv) The forbidden energy gap for germanium is
(a) 0.3 ev
(b) 3.5 ev
(xiii) Which of the following is an active element in
a circuit. (c) 0.72 ev
(a) Current Source (d) 1.1 ev
(b) Resistance (xv)
(c) Inductance 0.3 ev
(d) Capacitance
3.5 ev
(xiii)
0.72 ev
1.1 ev
(xvi) In a P-N junction without biasing, the P-side is
(a) Negatively charged
(b) Positively charged
(xiv) Which of the following gates is universal gate? (c) Uncharged
(a) NOT gate (d) None of the above
(b) OR gate
(xvi)
(c) AND gate
(d) NOR gate
(xiv)
NOT
OR
PTO
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(xvii) The decimal equivalent of binary 10011 is (xix) The bollean equation of exclusive OR gate is
(a) 7
(a) A B C
(b) 21
(b) A B C
(c) 17
(c) A.B C
(d) 19
(d) A B C
(xvii)
(xix)
A B C
A B C
A.B C
A B C
(xviii) Which semiconductor device acts like a diode
(xx) Binary equivalent of decimal number 22 is
and two resistors?
(a) Triac (a) 11010
(b) Diac (b) 10110
(c) SCR (c) 10101
(d) UJT (d) 10001
(xviii)
(xx)
PTO
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GROUP B
Or
State and explain flux, flux density, reluctance and 5. Explain extrinsic semiconductor with neat diagram. 4
permeability. 4
Or
3. Derive and expression for the force between two Define current amplification factor and , and
parallel current carrying conductors. 4 establish relation between them. 4
Or
A-B
7. What do you understand by dynamically and statically
induced e.m. f ? Explain 8
Or
Differentiate between a primary and secondary cell. 8
8. (a) State and explain ohm's law and give its limitations.
(b) Define rms value, Average value peak factor and 9. With neat and clean diagram explain the construction
form factor of a ac waveform. 8 and working principle of a dc generator. 8
Or
Or
State and explain the construction and operation of a
JFET 8
Or
(a) Draw V-I characteristics of a P-N junction diode
and explain it
(b) What do you mean by 'Donor' and 'Acceptor'
impurities in semiconductors? 8
P-N V-I
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