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Highly Sensitive Terahertz Gas Sensor Based on Surface Plasmon Resonance

With Graphene

Article  in  IEEE Photonics Journal · December 2017

DOI: 10.1109/JPHOT.2017.2778245

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Highly sensitive terahertz gas sensor based on surface

plasmon resonance with graphene
Yuanjiang Xiang, Jiaqi Zhu, Leiming Wu, Qi You, Banxian Ruan, and Xiaoyu Dai*
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology,

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,

College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China

*Corresponding author: xiaoyudai@126.com

Abstract: One of the main important applications of THz frequencies is biomedical sensing. However, in THz range, surface plasmon
waves (SPWs) on flat metals are not confined and therefore cannot be used for sub-wavelength sensing. But it has been shown that
graphene can support surface waves at THz frequencies which has similar properties as plasmonic waves in optical range. In this work,
a highly sensitive gas sensor in the terahertz frequencies by exciting surface plasmon resonance (SPR) of graphene is proposed. The
results show that the proposed SPR gas sensor has high stability and high sensitivity (S), and the highest Smax (~147°/RIU) has been
obtained by optimizing the Fermi energy, the thickness of the dielectric layer, and the incident light frequency. Moreover, the S of the
proposed THz sensor for different refractive index (RI) of gas sensing medium (n1) is also discussed.
Index Terms: Surface plasmon resonance, Terahertz gas sensor, Graphene.

1. Introduction
SPR is the resonant oscillation of conduction electrons by incident light at the interface between negative and positive
permittivity material stimulated. SPRs are very sensitive to any change of the boundary since the surface plasmon wave
(SPW) is on the boundary. Hence, since the SPR phenomenon is discovered, it has also been widely used in the field of
optical applications, such as optical modulators [1, 2], optical bistability [3, 4], plasma detectors [5, 6]. Especially in the
application of sensing technology is subject to extensive research [7-10]. The conventional SPR sensor in the visible range
always uses a single Au film coated on the prism to excite the SPW. And the SPW is very sensitive to the variation of the
surrounding medium. A slight change in n1 can lead to a dramatic change of the reflectivity curve. By analyzing the
reflectance curve (SPR curve), we can obtain useful information about the corresponding biological or chemical reactions.
SPR sensors have been widely used in various fields, such as food safety monitoring [11, 12], environmental engineering
[13, 14], medical analysis [15, 16], and biochemical test [17, 18]. However, the conventional SPR (CSPR) sensors have a
disadvantage of low S. Therefore, the design of a SPR biosensor with high S is expected.

After the 21st century, material science has entered a stage of rapid development. Many advanced and practical
two-dimensional materials have been prepared, for instance, graphene [19]. Graphene is a single atomic layer of graphite,
and the carbon hexagonal ring of the structure is very stable and solid. Therefore, it has a high chemical stability and good
biocompatibility to be used as biomolecule recognition element, which provides the possibility for its application in
biosensors. Wu et al. reported a SPR biosensor by using the graphene layer to have a nearly 25% enhancement of
sensitivity [20]; Gupta et al. designed a SPR biosensor with a high S = 134.6 º/RIU by using graphene [21]; Sreekanth et al.
proposed a graphene-based one-dimensional photonic crystal biosensor have an enhancement of the S [22].

In the past, the application of graphene in the SPR sensor has mostly stayed in the visible range or near infrared. And it
only uses the absorption of graphene to achieve the enhancement of sensitivity. However, this is not taking full advantage of
the specific properties of graphene. As a super-material, graphene can excite the surface plasmons (SPs) at the
Mid-infrared [23-25] or terahertz frequency [26-28], which has the potential for the application in the SPR sensor.
Purkayastha et al. proposed a SPR based gas sensor with Otto configuration in terahertz frequency to obtain a S = 34.11
º/RIU [29]. In this article, we design a graphene-based terahertz gas sensor by using graphene to excite the SPW, and the
highest sensitivity we have obtained is 147º/RIU.

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Fig. 1. The schematic diagram for the proposed SPR gas sensor.

2. Theory models and numerical methods

A highly sensitive terahertz gas sensor based on SPR by using few-layer graphene is proposed (Fig. 1). In this five-layer
configuration, we use the semi-cylindrical prism (Germanium, Ge) with a high RI (np=4) as the coupling prism. The second
layer is the gas sensing layer, and its refractive index and thickness are n1 and d1, respectively. The third layer is a
monolayer graphene, and it is coated on the surface of a low RI dielectric (n2=1.46). The conductivity of graphene is given
as [30, 31]:

   int ra   int er , (1)

where,

ie2 EF
 int ra  , (2)
 h(  i 1 )

ie2  2 EF  (  i 1 )h 
 int er  ln  , (3)
4 h  2 EF  (  i 1 )h 

where, e, EF, ω, τ, ћ=h/2π are the charge of an electron, Fermi-energy, angular frequency, phenomenological electron
relaxation time, and reduced Planck’s constant, respectively. The thickness of the low RI dielectric is d2. The last layer is the
substrate layer, and its refractive index equal to the prism: n3=np.

The gaseous analyte flows in the gas sensing layer from the air inlet and then flows out from the air outlet. In this work, we
have theoretically discussed the high performance of the THz gas sensor by using the transfer matrix method (TMM) [32].
The change of resonance angle (  ) which is caused by the variation of n1 ( n ) has a relation [33-36]:

S   n , (4)

where S is the sensitivity.

3. Numerical results and discussions

As we know, the conventional SPR sensors in visible range always use the single Au thin film to excite the SPP, but its
sensitivity is not high. In this article, we proposed a THz SPR gas sensor with few-layer graphene to excite the SPW under
terahertz frequency. Fig. 2 has given the relation of the reflectance and the incident angle. From the figure, it can be found
that the Δθ is 0.48°when the n1 changes from 1.000 to 1.005. By calculating, the S as high as 96°/RIU for the frequency
f=3THZ (λ=100µm) of the proposed terahertz SPR gas sensor.

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Fig. 2. Variation of reflectance with respect to the incident angle when Δn=0.005 for the proposed terahertz SPR gas sensor. Here, the thickness of d1 and
d2 are 1.2µm and 12µm, respectively, and the Fermi energy EF=0.75eV.

Fig. 3. (a) Variation of reflectance with respect to the incident angle; (b)Variation of the sensitivity with respect to the different refractive index (n1) of
sensing layer; (c) the electric field distributions of the proposed gas sensor for n1=1.00, n1=1.04, and n1=1.08. Here, EF=0.75eV, d1=1.2 µm, d2=12µm, and
f=3THZ.

Fig. 3(a) has illustrated the relation of the reflectance and the incident angle for different refractive index of sensing layer.
From it, we can find that the reflectance curves will have an obvious movement to a larger angle with the increase of n1.
o o
However, the incident angle has a range of 0 ~90 . With the increase of n1, the reflectance curve will have a movement and
o
its limit is 90 . Fig. 3(b) has shown the change of S with respect to the different n1. It demonstrates that the S will firstly
increases to the highest value (136 °/RIU) when n1=1.09, and then decreases when n1>1.09. Here, we also have plotted the
electric field distributions for different n1 (Fig. 3(c)). The resonance angle for n1=1.00, n1=1.04, n1=1.08 are 65.14°, 69.21°,
and 74.04°, respectively. It is obvious that there is a dramatic change in the electric field at the interface of
graphene/sensing layer when the refractive index of sensing layer changes from 1.00 to 1.08. When a slight change of n1,
the1943-0655
SPW (c) at2017
theIEEE.
interface will be changed, and then the electric field has a dramatic variation.
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In the proposed THz SPR gas sensor, the thickness of d1 and d2 can also has an important effect to S. Fig .4 has shown
the relationship between the S and the n1 for different thickness of d1 and d2. Fig .4(a) shows the variation of the S with
respect to the n1 for the different thickness of dielectric 1 (d1) when the thickness of dielectric 2 is 12 µm; while Fig. 4(b)
shows the change of the S with respect to the n1 for the different thickness of dielectric 2 (d2) when the thickness of dielectric
1 is 1.2 µm. The curves in the Fig. 4 illustrate that the S of the proposed THz SPR gas sensor will have an increase to the
highest at an appropriate value of n1, and then decreases. From Fig. 4(a), we can obtain some conclusions: 1) When
n1<1.10, we can choose the proposed SPR biochemical sensor with d1 = 1.2µm to receive the highest S; 2) When
1.12<n1<1.15, we can choose the proposed SPR biochemical sensor with d1 = 1.3 µm to have the highest S; 3) When
n1>1.15, we can choose the proposed SPR biochemical sensor with d1 = 1.4 µm to receive the highest S. While from Fig.
4(b), we can find that the effect of d2 to the S is also obvious. When the n1 is relatively small, we can choose a smaller d1,
while we can choose a larger d1 when the n1 is relatively large to obtain a higher S and a larger detection range. Here, using
the Snell's law, we can easily to know that the resonance angle will have a movement with n1 increasing. But with the
increase of n1, the reflectance curve will have a movement to a larger angle and its limit is 90o. When the n1 increases to a
certain value, we can obtain the largest Δθ to receive the highest S. However, when n1 continues to increase, the Δθ will
decrease due to the limitation of the angle range, and then the S begins to have a decrease.

Fig. 4. (a) Change of the S with respect to the n1 for the different thickness of dielectric 1 (d1) when the thickness of dielectric 2 is 12 µm; (b) Change of the
S with respect to the n1 for the different thickness of dielectric 2 (d2) when the thickness of dielectric 1 is 1.2 µm. Here, EF=0.75eV, f=3THZ.

The effect of Fermi energy to the S is also an important factor for the THz SPR gas sensor. The change of S with respect
to the Fermi energy for different n1 has shown in Fig. 5. From the figure, we can know that the highest S for n1=1.00, n1=1.05,
and n1=1.10 can be obtained when EF=0.66eV, EF=0.71eV, and EF=0.76eV, respectively. It is obvious that the optimal value
of Fermi energy will have a movement to larger one with the increase of n1. If the n1 is determined in the vicinity of 1.00, we
can obtain the highest sensitivity by controlling the Fermi energy at EF=0.66eV; If the n1 is determined in the vicinity of 1.05,
we can obtain the highest sensitivity by controlling the Fermi energy at EF=0.71eV; If the n1 is determined in the vicinity of
1.10, we can obtain the highest sensitivity by controlling the Fermi energy at EF=0.76eV.

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Fig. 5. Change of the S with respect to the Fermi energy for n1=1.00, n1=1.05, and n1=1.10. Here, d1=1.2 µm, d2=12µm, and the frequency is f=3THZ.

Fig. 6 has shown the Change of S with respect to the incident light frequency for the THz SPR gas sensor with different
Fermi energy. The figure illustrates that different Fermi energy corresponds to an optimum incidence frequency. When the
Fermi energy EF=0.65eV, we can get the highest S (136°/RIU) at the optimum incident frequency f=2.8THZ; When the Fermi
energy EF=0.70eV, we can get the highest S (141°/RIU) at the optimum incident frequency f=3.5THZ; When the Fermi
energy EF=0.75eV, we can get the highest S (145°/RIU) at the optimum incident frequency f=4THZ; When the Fermi energy
EF=0.80eV, we can get the highest S (147 °/RIU) at the optimum incident frequency f=4.6THZ.

Fig. 6. Variation of the S with respect to the frequency for the THz SPR sensor with different Fermi energy.

4. Conclusions
Surface plasmon resonances (SPRs) are well known for sensing applications in optical frequencies mainly because of their
highly confined and enhanced fields. However, at THz range, SPW are not confined to the surface like in optical frequencies.
Using graphene which support surface waves is a candidate to have waves with properties similar to plasmonic wave at
optical frequencies. In this work, a novel terahertz SPR gas sensor is proposed by using the monolayer graphene to excite
the surface plasmon. We have analyzed the incident light frequency, the Fermi energy, and the thickness of the dielectric
around the graphene to obtain an optimizing value of sensitivity. We showed that using this optimizing structure, sensitivity
of ~147°/RIU is achievable. In addition, we use the enhancement of electric field to verify the highly S of the proposed THz
SPR sensor. Finally, the change of S with respect to different n1 is discussed.

Acknowledgments
This work is partially supported by the National Natural Science Foundation of China (Grant Nos. 61505111, 61490713, and 51806001), the Science and
Technology Planning Project of Guangdong Province (Grant No. 2016B050501005) and the Educational Commission of Guangdong Province (Grant No.
2016KCXTD006), the Science and Technology Project of Shenzhen (JCYJ20150324141711667), and the Natural Science Foundation of SZU (Grant Nos.
1943-0655
201517, (c) 2017 IEEE. 827-000052,
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