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1132 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO.

6, NOVEMBER 2017

Letters
Tunable THz Multiband Frequency-Selective Surface Based on Hybrid
Metal–Graphene Structures
Da-Wei Wang, Wen-Sheng Zhao , Member, IEEE, Hao Xie, Jun Hu, Liang Zhou, Wenchao Chen, Pingqi Gao,
Jichun Ye, Yang Xu, Hong-Sheng Chen, Er-Ping Li, Fellow, IEEE, and Wen-Yan Yin , Fellow, IEEE

Abstract—In this letter, a tunable multiband THz frequency- detection, and wireless communication, have drawn a great deal
selective surface (FSS) is developed based on hybrid metal– of attention in the past decade [2], [3]. Recently, more and more
graphene structures. The tunability characteristics are realized researchers put focus on the design of THz frequency-selective
by inserting graphene strips between metal patches. The proposed
FSS is studied based on the equivalent circuit model, which is vali- surface (FSS) due to its wide applications in the signal spec-
dated against the simulation results using numerical methods. It is tral processing and antenna design. However, conventional THz
shown that the proposed hybrid structure has good performance FSS are usually made of metal materials, and merely operate at
in terms of bandwidth, gain, and tunability, and it is easy to be fixed pre-designed frequencies, which greatly hinder their prac-
built as a potential competitor for THz applications.
tical applications. Frequency-tunable THz devices have been
Index Terms—Frequency-selective surface (FSS), graphene, developed by employing some technologies like Schottky diode
multiband, terahertz. and phase-change material [4]. But the device complexity is
increased, with its frequency range also limited.
Graphene has been considered as a good candidate for de-
I. INTRODUCTION
signing tunable THz devices, as it possesses some extraordinary
ERAHERTZ (THz) regime, i.e., between 300 GHz and
T 10 THz, is a promising yet vexing slice of the electro-
magnetic spectrum [1]. THz applications, including imaging,
properties over a wideband frequency range. In particular, its
conductivity can be controlled by electrostatic or magnetostatic
field [5], [6]. More recently, many theoretical and experimental
investigations have been devoted to the development of
Manuscript received May 15, 2017; revised July 5, 2017 and August 6, 2017; graphene-based tunable THz devices, such as FSSs, couplers,
accepted September 1, 2017. Date of publication September 5, 2017; date of
current version November 8, 2017. This work was supported in part by the Na- and antennas [7]–[15]. However, these devices are usually
tional Natural Science Foundation of China under Grants 61431014, 61504033, designed based on graphene alone, and their performance
and 61504121, in part by the Zhejiang Provincial Natural Science Foundation parameters are limited by high conduction loss of graphene
of China under Grant LZ14F010001, in part by the Science Challenge Project
under Grant JCKY2016212A502, and in part by the Talent Project of Zhejiang sheet. In order to overcome such drawback, some hybrid metal-
Association for Science and Technology under Grant 2017YCGC012. The graphene structures, which could reduce loss while maintaining
review of this letter was arranged by Associate Editor M. Cole. the tunability, have been proposed recently [16]–[18].
D.-W. Wang and J. Hu are with the Centre for Optical and EM Research,
State Key Lab of Modern Optical Instrumentation, College of Optical Sci-
In this letter, a tunable multiband THz FSS is proposed based
ence and Engineering, Zhejiang University, Hangzhou 310058, China (e-mail: on a stacked hybrid metal-graphene structure. To facilitate its
davidwangwf@hotmail.com). design and optimization, an analytical approach based on the
W.-S. Zhao is with the Key Lab of RF Circuits and Systems of Ministry of
Education, School of Electronics and Information, Hangzhou Dianzi University,
equivalent circuit model is adopted and validated against the
Hangzhou 310018, China (e-mail: wsh.zhao@gmail.com). simulation results using numerical methods. This letter is or-
H. Xie, W. Chen, Y. Xu, H.-S. Chen, and E.-P. Li are with the Innovative ganized as follows. In Section II, the proposed FSS and its
Institute of Electromagnetic Information and Electronic Integration, College of
Information Science and Electronic Engineering, Key Lab of Advanced Micro-
equivalent circuit model are presented. In Section III, the simu-
Nano Electronic Devices and Smart Systems of Zhejiang Province, Zhejiang lation results are captured and analyzed. Some conclusions are
University, Hangzhou 310058, China. finally drawn in Section V.
W.-Y. Yin is with the Innovative Institute of Electromagnetic Information and
Electronic Integration, College of Information Science and Electronic Engineer-
ing, Key Lab of Advanced Micro-Nano Electronic Devices and Smart Systems II. GEOMETRY OF THE THZ MULTIBAND FSS
of Zhejiang Province, and State Key Lab of Modern Optical Instrumentation,
Zhejiang University, Hangzhou 310058, China (e-mail: wyyin@zju.edu.cn). A. FSS Structure
L. Zhou is with the Center for Microwave and RF Technologies, Key Labo- The configuration of a unit cell of the proposed FSS is shown
ratory of Ministry of Education of Design and EMC of High-Speed Electronic
Systems, Shanghai Jiao Tong University, Shanghai 200240, China. in Fig. 1(a). It is embedded into the silicon dioxide layers, and
P. Gao and J. Ye are with the Ningbo Institute of Material Technology and symmetrical to the middle plane. The parameter wp is the unit
Engineering, Chinese Academy of Science, Ningbo 315201, China. cell width (i.e., FSS period), wm is the metal grid width of the
Color versions of one or more of the figures in this letter are available online
at http://ieeexplore.ieee.org. top and bottom mesh grid layers, and h1 , h2 , and h3 are the
Digital Object Identifier 10.1109/TNANO.2017.2749269 thicknesses of the corresponding substrates, respectively. There
1536-125X © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications standards/publications/rights/index.html for more information.
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO. 6, NOVEMBER 2017 1133

For an infinite graphene sheet, the surface impedance can be


calculated as Zs = 1/σg = Rg + jωLg , and the resistance and
inductance of the graphene sheet can be given as

   −1
π2 μc μc
Rg = + 2 ln 1 + exp − (3)
e2 τ kB T kB T kB T
   −1
π2 μc μc
Lg = 2 + 2 ln 1 + exp − (4)
e kB T kB T kB T

C. Equivalent Circuit Model


Fig. 1(b) shows the equivalent circuit model of the proposed
multiband FSS. The inductive impedance of the mesh grid layer
can be calculated by [21]
Fig. 1. (a) Unit cell of the proposed tunable THz multiband FSS, and its
(b) equivalent circuit model.
ηeff
ZFS
TE
= jα (5)
2
are two kinds of hybrid metal-graphene layers, which can be ob-  
tained by depositing metal patches onto the cross-center nodes ηeff k02
ZFS
TM
= jα 1− 2 sin θ
2
(6)
of the patterned graphene grids. The widths of metal patch and 2 2keff
graphene grid in the metal-graphene layer (i = 1 and 2) are de-
noted as wi and wgi , respectively, and the corresponding chem-
The grid parameter α can be obtained from [22]. k0 is the
ical potential of the graphene grid is μci . In Fig. 1(a), a 50
wavenumber in free space, θ is the incident angle, ηeff =
nm-thick poly-silicon layer, together with a 10 nm-thick alu- √
ε0 εeff μ0 is the effective characteristic impedance of the uni-
minum oxide layer, is introduced on the top of silicon dioxide
form host medium with an effective dielectric constant εeff , and
layers to serve as an electrode. It can be easily realized by RF
keff is the effective wavenumber.
sputtering. In the following analysis, these two layers are ne-
For the hybrid metal-graphene structure in this study, the
glected due to their extremely thin profiles [19]. By adjusting the
metal-graphene contact resistance can be neglected [17]. The
bias voltage between the graphene and electrode, the graphene
impedance is a parallel combination of the inductive graphene
chemical potential and conductivity can be tuned dynamically
grid impedance and capacitive metal patch impedance, i.e.,
[6]. The metal sheet is assumed to be a zero-thickness perfect
electric conductor (PEC).  
1 wp − wn
ZFPn = Zp  Zg , n = 1, 2 (7)
B. Graphene Conductivity 2 wg n
Graphene can be modeled as a 2-D impedance boundary
whose conductivity is composed of intra- and inter-band ones. The metal patch impedance can be obtained by [21]
As the interband part is negligible in the interested frequency
range up to several THz here, graphene conductivity can be   −1
k2
expressed as [5] ZpTE = −jηeff 2α 1 − 02 sin2 θ (8)
2keff
   
e2 τ kB T μc μc η
σg = + 2 ln 1 + exp − ZpTM = −j
eff
(9)
(1 + jωτ ) π2 kB T kB T 2α
(1)
where μc is the chemical potential, τ is the relaxation time, T
[(wp − wn )/wg n ] · Zg is the impedance of the graphene grid,
is the temperature,  is the reduced Planck’s constant, ω is the
Zg is the surface impedance of the infinite graphene sheet, and
angular frequency, and kB is the Boltzmann’s constant. Here, τ
the factor (wp − wn )/wg n is the width-to-length ratio of the
and T are assumed to be 0.5 ps and 300 K, respectively [11],
graphene grid [23]. The characteristic impedance of ith substrate
[20]. The relationship between the biased electric field strength
with permittivity εi (i = 1, 2 and 3) can be determined by [16]
E0 and chemical potential μc is given by
 ∞
e η0
E0 = ε [fd (ε) − fd (ε + μc )] dε (2) ZiTE = √ (10)
ε0 π2 υF2 0 εi − sin2 θ

where υF is the Fermi velocity, and fd (ε) is the Fermi-Dirac η0 εi − sin2 θ
ZiTM = (11)
distribution. εi
1134 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO. 6, NOVEMBER 2017

Fig. 2. (a) Schematic of the simulation space for an infinite graphene sheet.
(b) Circuit model of a unit cell of graphene sheet in x-y plane, and (c) the
impedance model. The periodic boundary condition is employed to expand the
finite graphene sheet to infinite one.

The chain matrixes for the cascaded FSSs and substrates can
be expressed as
 
1 0
TFS = (12) Fig. 3. Transmission coefficients of the proposed multiband FSS with different
1/ZFS 1 (a) chemical potentials, and (b) incident angles.
 
1 0
TFPn = , n = 1, 2 (13)
1/ZFPn 1
  curl equations can be given as
cos (kz i hi ) jZi sin (kz i hi )
Ti = , i = 1, 2, 3
jsin (kz i hi ) /Zi cos (kz i hi ) ∂H
(14) ∇ × E = μ0 (17)
∂t

The total ABCD matrix of the whole design can be obtained ∂E


∇×H =ε +J (18)
by ∂t

TFSS = TFS T1 TFP1 T2 TFP2 T3 TFP2 T2 TFP1 T1 TFS (15) By applying the spatial and time difference techniques, the
updating equations of the LE-FDTD with a graphene sheet lo-
Then, the transmission coefficient of the proposed multiband cated in the x-y plane (see Fig. 2(a)) are derived as
FSS is calculated by [24]
Δt Δt
  Exn +1 = Exn + (∇ × H)n +1/2 − I n +1/2
 2  εx εx ΔyΔz x

|S21 | =   (16) (19)
A + B/Zs + CZs + D 
Δt Δt
Eyn +1 = Eyn + (∇ × H)n +1/2 − I n +1/2
where Zs = Z0 /cos θ. εy εy ΔxΔz y
(20)
Δt
D. LE-FDTD Method Ezn +1 = Ezn + (∇ × H)nz +1/2 (21)
εz
FDTD method is commonly used for the electromagnetic
Δt
characterization of graphene-based devices in the THz range [7], Hxn +1/2 = Hxn −1/2 − (∇ × E)nx +1 (22)
[15]. Due to the electrical characteristics and physical structure μ0
of graphene sheet, it is convenient and reasonable to derive it as Δt
an impedance network along the mesh edge. Therefore, the LE- Hyn +1/2 = Hyn −1/2 − (∇ × E)ny +1 (23)
μ0
FDTD method is employed in this study. The main procedure of
Δt
the LE-FDTD implementation is outlined as follows [25]. In the Hzn +1/2 = Hzn −1/2 − (∇ × E)nz +1 (24)
case of a lossy material, the time- domain form of the Maxwell’s μ0
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO. 6, NOVEMBER 2017 1135

Fig. 4. Transmission coefficients of the proposed FSS as a function of fre-


quency and incident angle (μ c = 0 eV).

Fig. 5. Transmission coefficients of the proposed multiband FSS (a) as a


function of μ c 1 with μ c 2 = 0.3 eV and (b) as a function of μ c 2 with μ c 1 =
0.3 eV. The resonant frequencies are marked in the figures for reference.

where Δt is the time step, and Δx, Δy and Δz are the FDTD
cell sizes in the x−, y− and z−direction, respectively. As shown
in Fig. 2(b), a unit cell of the graphene sheet can be modeled Fig. 6. Transmission coefficients of the proposed multiband FSS as a function
with four impedances. Supposing each impedance is a series of (a), (b) w g 1 and (c), (d) w g 2 with different graphene chemical potentials.
combination of the resistance Rg and the inductance Lg , as The resonant frequencies are marked in the figures for reference.
shown in Fig. 2(c), Ix and Iy can be given as

2Δt · Δx 2Lg − Δt · Rg n −1/2 III. NUMERICAL RESULTS AND DISCUSSION


Ixn +1/2 = En + I (25)
2Lg + Δt · Rg x 2Lg + Δt · Rg x Fig. 3(a) shows the magnitude of transmission coefficients
of the proposed FSS. The following parameter settings are se-
2Δt · Δy 2Lg − Δt · Rg n −1/2
Iyn +1/2 = En + I (26) lected as h1 = 8 μm, h2 = 6 μm, h3 = 5 μm, wp = 10 μm,
2Lg + Δt · Rg y 2Lg + Δt · Rg y wm = 0.5 μm, w1 = 8 μm, w2 = 7 μm, wg1 = 1.2 μm, and
wg2 = 3 μm. The solid and dashed lines are obtained using
The resistance and inductance of the graphene sheet can be the finite-element method (FEM) electromagnetic solver HFSS
calculated using (3) and (4). and the in-house developed LE-FDTD algorithm, respectively,
1136 IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO. 6, NOVEMBER 2017

Fig. 7. Transmission coefficients of the proposed multiband FSS as a function of (a) w p , (b) h 1 , (c) h 2 , and (d) h 3 with μ c = 0.3 eV. The resonant frequencies
are marked in the figure for reference.

Fig. 8. Transmission coefficients of the proposed multiband FSS with the resonant frequency (a) fre s1 , (b) fre s2 , and (c) fre s3 kept stable and others tuned.

while the symbols are obtained using the circuit model in propagated along the graphene sheet is attenuated due to the
Fig. 1(b). As shown in Fig. 3(a), the results from the three complex wavenumber [20].
methods agree well. The transmission coefficients with differ- To facilitate the analysis, only the normal incident case, i.e.,
ent incident angles are shown in Fig. 3(b). Fig. 4 illustrates θ = 0◦ , is considered in the following. By virtue of the circuit
the transmission coefficients of the proposed FSS versus fre- model, the magnitude of the transmission coefficients versus
quency and incident angle. It can be seen from Fig. 3 that the graphene chemical potential are plotted in Fig. 5. By increasing
proposed FSS exhibits multiband behavior, whose bands are μc1 from 0 to 0.6 eV, fres3 is increased by 0.32 THz, while
marked as 1, 2, and 3. The corresponding resonant frequencies the other two resonant frequencies shift slightly. In contrast, the
are denoted as fres1 , fres2 , and fres3 , respectively. It is shown variation of μc2 mainly affects the first two bands with the third
that good tunability can be realized at three resonant frequen- band kept almost unchanged. Therefore, it can be expected that
cies. In the normal incident case, with the chemical potential of the three bands can be tuned separately by reasonably adjusting
graphene increasing from 0 to 0.3 eV, the resonant frequencies μc1 and μc2 , which demonstrates highly flexible tunability of
are blue-shifted from 2.93 to 3.13 THz, 4.52 to 4.66 THz, and the proposed FSS.
5.79 to 5.97 THz, respectively. At the same time, however, the The impacts of graphene grid widths on the resonant fre-
graphene conduction loss is exacerbated, thereby leading to de- quencies are investigated, as shown in Fig. 6. It can be seen that
creased transmission coefficients [11]. This can be explained as the resonant frequencies increase linearly with the graphene
follows. The device losses are mainly attributed to the graphene grid width, and the slope is larger at higher chemical potential.
ohmic loss and plasmonic loss. With the increase of μc , the bi- Therefore, the tunability of the proposed FSS can be enhanced
ased graphene behaves as a good conductor with non-negligible by increasing the graphene grid width. For example, as both
ohmic loss, while the surface plasmonic polariton (SPP) wave μc1 and μc2 increasing from 0 to 0.3 eV, the tunability ranges
IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 16, NO. 6, NOVEMBER 2017 1137

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