ES-371 CEP REPORT

SUBMITTED BY
SAREM MEHMOOD-2019459
FAZAL SUBHAN AFRIDI-2019132

SUBMITTED TO
SIBTUL HASSAN
ABSTRACT
This paper tells us about Hall Effect and how it describes how current flows through a
conducting material that is a metal or a semiconductor. Hall effect was discovered by EDWIN
HALL in 1879. Hall found that when a magnet was placed perpendicular to the face of a metal
or a semiconductor through which a current was flowing, a difference in potential appears at
the opposite edges.
In this report we will configure a metal to study its phenomenon of proximity and by using this
configuration we will be able to evaluate certain parameters which will be use in determining
charge carriers’ density in the materials and Hall coefficient.

INTRODUCTION
The Hall Effect is basic to solid state physics and important diagnostics tool for the
characterization of materials particularly, semiconductors. It provides the direct determination
of sign of charge carriers and their density given in the sample.
A current (I) is arranged to flow through the strip from left to right, and the voltage difference
between the top and bottom is measured. Assuming the voltmeter probes are vertically aligned,
the voltage difference is zero when B = 0. The current I flows in response to an applied electric
field, with its direction established by convention. However, on the microscopic scale I is the
result of either positive charges moving in the direction of I, or negative charges moving
backwards. In either case, the magnetic Lorentz force q v × B causes the carriers to curve
upwards. Since charge cannot leave the top or bottom of the strip, a vertical charge imbalance
builds up in the strip. This charge imbalance produces a vertical electric field which
counteracts the magnetic force, and a steady-state situation is reached. The vertical electric
field can be measured as a transverse potential difference on the voltmeter. Suppose now that
the charge carriers where electrons ( q − e = ). In this case negative charge accumulates on the
strip’s top so the voltmeter would read a negative potential difference. Alternately, should the
carriers be holes ( q positive voltage. + e = ) we measure a positive voltage.
Problem Statement:

1.1 Configure Hall Effect sensor to study/detect the phenomena of

proximity with respect to any system as shown in Figure 1.

Figure 1 Hall Effect Sensor

The left-hand side of the figure shows the Hall effect. The electric current passes through the
metal plate, the magnet perpendicular to the metal plate gives the magnetic field to the electrons
and the holes. Due to this magnetic field the electrons tend to move upwards directions while
holes move to the downward direction. This deflection is caused by Lorentz force. These two
sides get some voltage which can be measured by digital multimeter. This is the basic working
principle of Hall Effect.
Hall Effect can be used for measuring proximity because of their continuous linear output and
digital output. In the right-hand side of the figure, we can make a proximity system which can
detect the RPM of a wheel. The Hall Effect sensor is placed near the tooth disk. The gap
between the disk and sensor is very small so that whenever the tooth of the disk evolves across
the sensor, it changes the surrounding magnetic field which will cost the output of the sensor
to go either high or low. In this case the output of the sensor is a square wave, which can be
easily used for calculating the RPM of the wheel.
1.2 Evaluate the hall-effect properties (Hall Voltage, Charge Carrier Density
and Hall Coefficient) using Equation-Based Modelling. Refer to Table
1 for evaluating parameters.

Parameters Range
Current As per your requirement
Magnetic Field Corresponding to the Current
Thickness of a Sample As per your need
Hall Current As per your need
Table 1 Parameters and Ranges for the
Hall Geometry
𝐼𝐻 × 𝐵
𝑉𝐻 =
𝑛𝑞𝑑
n=3.221x1020
𝐼𝐻 =1x10-3 A
B=0.14x10-3 T
q=1.6x10-19
d=0.5x10-3 m
𝑽𝑯 = 𝟓. 𝟒 × 𝟏𝟎−𝟔
𝑉𝐻 𝑑
𝑅𝐻 = ×
𝐵 𝐼
𝑹𝑯 = 𝟎. 𝟎𝟏𝟗 𝑻
N= 𝟑. 𝟐 × 𝟏𝟎𝟏𝟕
 1.2 Support the results obtained from part 2.2 with the help of Virtual Tools. In case
of any divergence, emphasize on the reasons of that difference.

𝑉𝐻 𝑑
𝑅𝐻 = ×
𝐵 𝐼
1
𝑛=
𝑒 × 𝑅𝐻

No. Of Readings I(mA) B(mT)

1 1 0.14

2 2 0.29

3 3 0.44

4 4 0.59

5 5 0.74
 No. Of B(mT) VH(mV) 𝐼𝐻 (mA) d(mm) 𝑅𝐻 Charge
Readings Carriers
1 0.14 5.751 1 0.5 20.539 3.042 × 1017

2 0.29 11.50 1 0.5 19.82 3.15 × 1017

3 0.44 17.253 1 0.5 19.60 3.18 × 1017
4 0.59 23.005 1 0.5 19.49 3.20 × 1017
5 0.74 28.756 1 0.5 19.42 3.21 × 1017

Approaches Suggested Parameters Compliance/

for the Tools Divergence
Analysis
Electric Magnetic Hall Charge Hall Reasons of
Current Field Voltage Carrier Coefficient compliance or
/Field Density divergence from
other results
Hall Effect ------------
Sensor
Equation- Mathematica/ 0.14 5.4x10-6 3.2 × 1017 0.019 n-type Ge
Based MATLAB
Modeling
Virtual Tools Amrita 0.14 5.751 3.0 × 1017 20.539 n-type Ge
Labs/OLABS
Physical Lab PHYWE 0.16 5.627 3.17 19.782 n-type Ge
Apparatus
× 1017