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 Phys. Scr. 96 (2021) 125536 https://doi.org/10.1088/1402-4896/ac42a8

PAPER

Bidirectional switchable beam splitter/filter based graphene loaded

RECEIVED
26 November 2021
Si ring resonators
ACCEPTED FOR PUBLICATION
13 December 2021
PUBLISHED
Amin Bagheri1 , Fakhroddin Nazari2 and Mohammad Kazem Moravvej-Farshi3
23 December 2021 1
Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 1477893855, Iran
2
Faculty of Engineering Modern Technologies, Amol University of Special Modern Technologies, Amol 4616849767, Iran
3
Faculty of Electrical and Computer Engineering, Nano Plasmo-Photonic Research Group, PO Box 14115-194, Tarbiat Modares
University, Tehran 1411713116, Iran
E-mail: moravvej@modares.ac.ir

Keywords: graphene, ring resonators, splitter, filter

Abstract
Using bus waveguides coupled to the graphene-loaded Si-ring resonators (GSRRs) all on a Si-on-
insulator substrate, we propose a compact bidirectional switchable beam splitter/filter controlled by
graphene-based electro-absorptive (refractive) mode modulation. The design is suitable for dense
wavelength division multiplexing (DWDM), according to International Telecommunication Union
(ITU) standard. The proposed device consists of a through waveguide coupled to two drop waveguides
via two GSRRs. Each GSRR consists of a stack of hBN/graphene/hBN nanolayers sandwiched
between two Si-ring resonators. Using a finite difference time domain method, we have tuned the
resonant wavelengths of GSRRs in the range of 1551.5 < λ < 1552.1 nm, linearly with the slope of
∼ 2.46 nm eV−1 via appropriately changing the graphene chemical potential, electrostatically. The
numerical results show that when both GSRRs are in an electro-refractive state and a transverse
electric (TE) polarized light beam of an appropriate wavelength is launched into one of the though-
ports,∼84.5% of the input intensity equally splits between the adjacent drop-ports. The transmission
out of the second through-port is less than 0.8%. The numerical results further show that when one
GSRR is in an electro-refractive mode, and the other one is in an electro-absorptive state, ∼ 68.4% of
the input intensity transmits out of the drop-port adjacent to the former GSRR, and the other ports
experience insignificant outputs (<0.7%). The device’s structural symmetry makes it a bidirectional
tunable, suitable for long-haul optical telecommunication applications. Finally, we investigated the
fabrication tolerances in the designed parameters.

1. Introduction

Future advances in computer speeds are contingent on augmenting the bandwidth of the underlying network-
on-chip (NoC). Replacing conventional NoCs with their next-generation optical counterparts projects a
decrease in power consumption and delay [1]. The realization of photonic devices for chip-level
communications requires devices such as modulators [2–5], filters [6–8], switches [9–11], dense wavelength
division multiplexers (DWDM) [12–14], and splitters [15–18]. Photonic interconnects, in general, routing the
optical power from the off-chip laser to all-optical stations in an NoC via a backbone waveguide [19]. The station
associated with NoC includes a switch, filter, and power splitter that splits a portion of the light-power from the
backbone waveguide at a specific wavelength for its consumption. The size of the power that deviated from the
backbone waveguide depends on the split ratio of the power splitter. The majority of optical power splitters
primarily have been made of Y branches [20], directional couplers [21], and multimode interferometers (MMIs)
[17]. Typically, these splitters always split a predefined amount of power from the backbone waveguide at a given
wavelength, regardless of the need for an optical station. This approach has proven to increase power
consumption because some stations receive optical power even when they are not transmitting any data on the
NoC and do not need the power they received [22]. Thapliya et al [17] have designed MMI-based 1×2 splitters,

© 2021 IOP Publishing Ltd

Phys. Scr. 96 (2021) 125536 A Bagheri et al

offering the possibility of dynamically tuning the power-splitting ratio using electro-optic (EO) polymers. Peter
et al [16] have used a p–n junction ring resonator to adjust the power splitter split-ratio. Ghosh et al [15],
employing an electro-optic polymer, have reported the design of a tunable optical power splitter based on an
add-drop structure. Moreover, a couple of research groups have utilized 2D materials for designing various
electro-optic devices recently. Graphene having superior advantages [5, 23], has emerged as a promising 2D
material in designing THz photonic devices. Nowadays, there is a tendency to integrate multi-functional
photonic devices on a single chip, having the advantages of compact size, high performance, low loss, and low
power consumption [24]. Shu et al [5] proposed a compact graphene modulator using a graphene-silicon
waveguide, experimentally and theoretically. Using externally applied voltages, they have shown the possibility
of switching the device from electro- absorptive modulation mode to electro-refractive modulation mode.
Besides, QIU et al [25] investigated the graphene-based plasmonic MMI power splitters with ultra-compact size.
Utilizing a graphene-Si-waveguide micro-ring, Yang et al [10] designed a 2×2 optical switch based on an add-
drop structure. Later, Campany et al [26] reported a reconfigurable coupler using a Si-graphene Mach Zehnder
interferometer. Sorianello et al [27] have reported graphene-based optical modulators integrated on Si photonic
platforms. Then, using a graphene-ribbon waveguide, Yang et al [24] proposed an ultra-compact splitter/filter
for a mid-infrared band. In our most recent work [27], we have employed the electro-optic effect in a pair of
graphene-loaded Si-ring resonators (GSRRs) and proposed a tunable demultiplexer for DWDM applications.
We have demonstrated the designed tunable demultiplexer having strong light confinement and high quality
factor enjoys from narrow FWHM with small channel spacing, compatible with ITUT standards.
Extending our earlier design [27], in the present manuscript, we have proposed an ultra-compact and CMOS
compatible bidirectional switchable beam splitter/filter, utilizing two graphene-loaded silicon-ring resonators
(GSRRs). The new design also complies with ITUT standards and is hence suitable for DWDM based optical
communication networks. Here, using a mode-solving technique, we obtained the electric-field distributions
and dispersion feature of the device. To simulate the characteristics of the proposed optical beam splitter/filter,
we employed a finite difference time domain (FDTD) method. For these simulations, we utilized a non-uniform
meshing with a minimum resolution of 0.1 nm, suitable for the graphene micro-ribbons.

2. Device structure and operating principles

2.1. Structure
Figure 1(a) illustrates a three-dimensional (3D) schematic view of the proposed optical beam splitter/filter.
The platform is a Si-on-insulator (SOI) substrate. The device structure consists of a through-waveguide with
ports T1 and T2 and two drop-waveguides with ports D11(12) and D21(22) coupled via two GSRRs. Figure 1(b)
illustrates an x-z cross-section (AA’ view) of the structure shown in figure 1(a). As observed from figure 1,
each GSRR consists of a graphene micro-ribbon sandwiched between two Si rings separated by hBN
nanolayer spacers on both sides. Yang et al [28] have shown that single-layer graphene can be directly grown
on hBN by a plasma-assisted deposition method. Kim et al [29] demonstrated the accomplishment of
multiple stacking of graphene and hBN on Si and SiO2 by a film transfer method. Besides, an hBN nanolayer
with a dielectric strength of ∼1.2 V nm−1 [30] permits the graphene micro-ribbon to preserve its high
mobility because it is inherently flat, free of charge traps, and dangling bonds [31]. The lower hBN nanolayer
in each GSRR (figure 1(b)) plays the role of the gate oxide in the parallel-plate capacitor
(graphene/hBN/n +–Si/Au), and Au/n+–Si acts as the gate electrode. The Si bar in the middle of each GSRR
seen in figure 1(b) merely supports the ground terminal (Au) on top of the graphene micro-ribbon. Table 1
list the geometrical dimensions and the material parameters of the structural constituents. We have designed
the two Si ring resonators with the same drop and through coupling regions to meet the critical coupling
condition, experiencing a minimum insertion loss at the drop port when the ring resonator is at resonance,
leading to an optimized insertion loss for the proposed device [7].
Figures 1(c) and (d) show the transmission spectrum for a single embedded silicon ring resonator and the
related mode intensity distribution. At the resonance, the drop port exhibits the maximum transmission of ∼1.
A fraction of the incoming field coupled to the ring builds up and then drops to this port. In this case, the
microring resonator is ON resonance, and hence, the through port exhibits a minimum of ∼ 0. Moreover, as
shown in the mode intensity distribution, the ring resonator selects a specific wavelength and switches it, mainly
to the drop port.

2.2. Operating principle

The choice of W (width) and h (height) of each waveguide and GSRR are such that both can confine a single
mode transverse electric (TE) polarized light beam. The desired center wavelength of this light beam
(λ0=2π R neff/m) should coincide with the resonance wavelength of the GSRRs of the same average radii (R)

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 1. (a) 3D Schematic representation of the bidirectional switchable beam splitter and filter based on two graphene loaded micro-
ring resonators (b) A z-x cross-sectional view of the graphene-loaded micro-ring resonator. (c) The transmission spectrum of a
sandwiched single silicon ring resonator without the graphene layer. (d) The corresponding mode intensity distributions across the
entire structure at the resonance wavelength.

Table 1. The utilized geometrical and physical parameters [32–35].

Symbol Definition Size Unit

g1 Lateral spacing between through-waveguide and GSRRs 200 nm

g2 Lateral spacing between drop-waveguides and GSRRs 210 nm
h GSRRs and waveguides heights 220 nm
n Refractive index of n+−Si 3.46−8.8×10−22N0 −
N0 n+–Si doping concentration 1019 cm−3
R GSRRs average radii 5 μm
ts SiO2 thickness 2 μm
td hBN thickness 7 nm
vF Graphene’s Fermi velocity 1.2×106 m s−1
W GSRRs and waveguides widths 400 nm
WG Graphene microribbons widths 5.2 μm
εb The refractive index of SiO2 1.44 −
εd hBN relative dielectric constant 3.92 −
ε0 Free space permittivity 8.85×10−12 F m−1
τ1 Graphene intraband momentum relaxation time 10 fs
τ2 Graphene interband momentum relaxation time 1.2 ps

and the effective refractive indices (neff). Notice, m is a positive integer number. Each embedded graphene layer
is in the x-y plane, wherein the maximum intensity of the resonance mode within that GSSR occurs. Moreover,
the Au electrodes are far enough from the waveguides and the GSRRs to prevent impacting their propagation
modes. In practice, one can launch the laser beam into the through-port utilizing a lensed single-mode fiber tip
mounted on an XYZ nanopositioning stage [8]. One may use a similar approach to collect the output beam from

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 2. Variation of Re (σg) and Im (σg) with the chemical potential at λ0=1552 nm.

the drop port. We can use a fiber-based polarization controller to rotate the laser polarization and excite the
fundamental TE mode of the single-mode silicon waveguide [8]. Consider launching a TE polarized light beam
of λ0=2π R neff into the port T1. The light in the vicinity of the coupling regions couples partially into each
GSRR. Then, part of the light beam circulating in each upper (lower) GSRR couples into the adjacent drop-
waveguide, transmitting out of port D11(21). However, an off-resonance light exits the through-waveguide from
the port T2 without being coupled to the GSRRs. Concerning structural symmetry, the proposed device can
operate as a bidirectional switchable beam splitter and filter.
By changing the voltage (VG1(2)) applied to the gate electrodes, we can tune the graphene optical conductivity
and hence the GSRR effective refractive index and their resonance wavelengths as desired, switching them
between the electro-absorptive and electro-refractive modes. Applying an appropriate positive voltage (VG1(G2))
to the gate electrode, we can control the chemical potential of the corresponding micro-ribbon and hence the
surface carrier densities (n2D) via μC=(ÿ2v2F π n2D)1/2, in which ÿ and vF represent the reduced Planck constant
and the carrier Fermi velocity in graphene. Moreover, n2D≈ε0εd (V+V0)/etd, where V0=0.8 V is the offset
voltage caused by natural doping, and εd and td are the permittivity and the thickness of the gate dielectric (See
table 1). Via modulating the graphene’s chemical potential, one can modulate its optical conductivity. Using the
technique described here, one can modulate graphene conductivity in the range of −1<σg <1 S [36, 37]. In the
absence of an external magnetic field, one may use the simplified Kubo formulas to estimate σg [34]:
4mC 1 w - 2mC 1 w + 2mC i (w + 2mC ) 2 + (G2) 2 ⎞ ⎫
sg = s0 ⎧ + tan-1 - tan-1 - ln ⎜⎛ ⎟ + 1 (1)
⎩ p (G1 - iw )
⎨ p G2 p G2 2p ⎝ (w - 2mC ) 2 + (G2) 2 ⎠ ⎬
⎭
where σ0 = e2/(4ħ), ω represents the angular frequency of the light beam, T is the temperature, kB is the
Boltzmann constant, Γ1=1/τ1, and Γ2=1/τ2, where τ1, τ2 are intra-band and inter-band momentum
relaxation time, respectively [34]. Using the Drude model and treating the graphene monolayer as an ultra-thin
film, the equivalent volumetric permittivity of graphene for transverse electric (TE) polarization ε|| can be
written as [38–40]:
e = er + isg e0 w D and e^ = er (2)
where ε0 is the free space permittivity, εr represents the average effective permittivity of the embedded graphene
layer, and Δ = 1 nm is the presumed thickness of the graphene layer, knowing that the graphene actual thickness
is ∼0.34 nm. Considering sufficiently small mesh size (0.1 nm) within the graphene layer, the deviation between
the simulation results obtained from the presumed thickness and those obtained from the actual thickness
becomes negligible [41–45].

3. Results and discussions

Using equation 1, we have calculated the real and imaginary parts of the optical conductivity of graphene (Re (σg)
and Im (σg)) for the wavelength of interest (λ0=1552 nm) as shown in figure 2. As can be seen from this figure,
σg varies sharply around μC=ћω/2≈0.4 eV, leading to a significant change in the graphene effective
permittivity. Since the out-of-plane effective permittivity of the graphene micro-ribbons sandwiched between
two dielectric layers, ε⊥, is constant, the electric field intensity of the transverse magnetic (TM) mode (i.e., Ez) is
much unaffected [35]. On the other hand, the TE mode sees the variations of the in-plane permittivity ε||, and
corresponding electric field components (Ex and Ey) become significant [27, 35]. Furthermore, the E-field
component of the TE mode on the GSRRs sidewalls is higher, whereas that of the TM mode is stronger on the

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 3. The real and imaginary parts of the effective refractive index of the graphene-loaded micro-ring resonator versus μC(eV), at
λ = 1552 nm.

Figure 4. The mode intensity profile within a cross-section of one GSRR surrounded by dashes in figure 1(b), for λ = 1552 nm and
μC=0.44 eV. White dots show the Si boundaries and the yellow dashes represent the graphene layer.

GSRRs top and bottom surfaces. Hence knowing these and the lateral coupling between GSRRs and waveguides,
we have chosen the proposed device to operate in the TE mode.
Using the mode-solving technique, we calculated the dispersion behavior of the GSRR around λ=1552
nm. Figure 3 illustrates the real and imaginary parts of the effective index of GSRRs (Re(neff) and Im (neff)) for the
TE mode at the given λ0. As shown in this figure, Re (neff) and Im (neff) vary sharply around μC=ÿω/2≈0.4
eV (i.e., obtained at the gate voltage of VG1(G2)=1.316 V.) However, at the smaller applied voltages for which
|μC|<ÿω/2, the GSRRs become lossy (Im (neff)>0), and hence, weakening the light that is going to couple to
the drop-waveguide. In other words, for VG1(G2)„1.316 V, the device is in the absorptive mode. This effect is
the consequence of the reduced carrier density in the graphene micro-ribbons. On the contrary, at applied
voltages for which |μC|>ÿω/2, the graphene micro-ribbons become heavily populated, and the loss in GSRRs
reduces significantly (Im (neff)→0). Hence a significant amount of light can couple to each drop-waveguide. In
other words, the device is in the electro-refractive mode. Varying the applied gate voltages, one can switch the
proposed structure between the electro-absorptive and electro-refractive modes and vice-versa without the need
for any geometrical manipulation.
Using the data given in table 1 and figure 3, we have simulated the distribution of the normalozed mode
intensity |E/E0|2 within the GSRR cross-sectional area encircled by the dashes surrounding the GSRR in
figure 1(b)) for λ = 1552 nm and μC=0.44 eV, in figure 4. As can be seen from this figure, in the resonance
state, the mode intensity is confined mainly within the GSRR. This profile confirms that the graphene micro-
ribbon (yellow dashes) position coincides with the maximum mode intensity.
To characterize the optical propagation across the proposed structure, we considered launching a wideband
(1550„λ <1560 nm) TE mode beam into the device from port T1. Then, utilized an FDTD method to obtain
the output spectra at the trough-port T2 and drop-ports (D11 and D21) while keeping the graphene micro-
ribbons and hence the GSRRs in the electro-absorptive mode (e.g., at VG1=VG2=1.151 V). The data depicted
by the solid blue curve in figure 5(a), around λ=1552 = λr, indicate that ∼ 72.5% of the incident light beam
transmits out of the through-waveguide from port T2, at the given biasing condition. In other words, the optical

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 5. (a) Transmission spectra at ports T2 (solid curve), D11 (dashes), and D21 (dots) for the biassing condition of
VG1=VG2=1.151 V, (b) The corresponding mode intensity distribution across the entire structure at the resonance wavelength of
λ 1552 nm.

Figure 6. (a) Transmission spectra at ports T2(1) (solid curve), D11(12) (dashes), and D21(22) (dots) for the biassing condition of
VG1(2) = 1.637 V and VG2(1) = 1.151 V, (b) and (c) The corresponding mode intensity distributions across the entire structure at the
resonance wavelength when the input optical signal is launched from ports T1 and T2.

loss induced in the graphene micro-ribbons weakens the light circulating within GSRRs at its resonance
wavelength. As a result, the portion of light intensity that couples from each GSRR to the adjacent drop-
waveguide is insignificant, resulting in a low split-ratio of < 0.5% for both drop-channels D11 (dashes) and D21
(dots). Figure 5(b) displays the corresponding mode intensity distribution.
Next, we considered launching the same wideband input optical signal into the structure from Port T1(2),
maintaining the upper (lower) GSRR in the electro-refractive state (e.g., VG1(2)=1.637 V) and the lower (upper)
one in the electro-absorptive state (e.g., VG2(1)=1.151 V), and simulated the propagation nature of the optical
signal throughout the proposed beam splitter/filter. Figure 6(a) illustrates the transmission spectra at ports T2(1)
(solid line), D11(12) (dashes), and D21(22) (dots). As can be seen from solid and dotted curves in this figure for the
resonance wavelength, the transmittances via ports T2(1) and D21(22) are both insignificant (<0.7%), while the
dashed curve indicates the transmittance through port D11(12)∼68.4%. In other words, the electro-refractive
mode of the upper (lower) GSRR has caused six times enhancement in light intensity circulating within it at
resonance, as can be seen in figures 6(b) and (c). A portion of this enhanced light has dropped in the adjacent
drop-waveguide and transmitted out from D11(12). On the contrary, the lossy graphene micro-ribbon in the
lower (upper) GSRR has absorbed most of the light coupled to it from the through-waveguide, at resonance,

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 7. (a) Transmission spectra at ports T2 (solid curve), D11 (dashed curves), and D21 (dotted curves) for the biassing conditions of
VG1=1.585, 1.637, 2.191, 2.826, and 3.541 V and VG2=1.151 V; (b) The dependence of peak of the transmittance T2 (left axis) and
the resonant wavelength (right axis) on the graphene chemical potential. (c) and (d) are the similar data obtained for a similar structure
to that shown in figure 1, except for the location of graphene/hBN layers moved to the top of the GSRRs.

leaving an insignificant amount of light dropping in the adjacent drop-waveguide and transmitting out from
D21(22). The data indicate the bidirectional property of the optical beam-splitter due to its structural symmetry.
Then, we kept the lower GSRR in an electro-absorptive mode (VG2=1.151 V) and tuned the electro-
refractive state of the upper GSRR via changing VG1 (= 1.585, 1.637, 2.191, 2.826, and 3.541 V), and repeated our
calculations for the transmittance spectra out of ports T2 (solid curves), D11 (dashed curves), and D21 (dotted
curves), as seen in figure 7(a). The data in this figure shows, one can tune the peaks of the resonance wavelengths
in the upper GSRR by changing the applied voltage VG1. One can attribute the blue shift in the resonant
wavelengths to the decrease in the effective refractive index of the GSRR due to an increment in the graphene
chemical potential induced by an increase in VG1 (see the solid curve in figure 3). Figure 7(b) represents the
resonance peaks of GSRR versus the chemical potential, showing a linear dependence with the slope of
∼ −2.46 nm eV−1. Comparison of this tunability range/efficiency with those recently reported for approaches
like thermo-optics (i.e., ∼1 nm) [46], electro-optics (i.e., ∼130 pm V−1) [47], and optomechanical (i.e., ∼ 0.3
nm) [48], shows the tuning efficiency/range of our proposed electro-optic splitter/filter is remarkable. To
provide evidence for our earlier claim regarding the position of graphene/hBN, we obtained data similar to
those shown in figures 7(a) and (b) for a similar optical splitter in which we replaced each GSSR with a similar but
simpler multilayer formed by n+−Si/hBN/graphene (215.5 nm/3.5 nm/1 nm). Figures 7(c) and (d) illustrate
the plots. Comparison of figure 7(a) with (c) and figure 7(b) with (d) confirms the superiority of the proposed
optical splitter with embedded hBN/graphene/hBN multilayers as the device tunability is concerned. Although
the peak transmissions through port D11 for some biasing conditions shown in figure 7(c) are ∼12% greater than
their counterparts shown in figure 7(a), the nonlinear variation of their corresponding resonant wavelengths
over the narrow range of ∼0.14 nm ( figure 7(d)) demonstrate their unsuitability.
Next, we repeated our calculation for the case in which both GSRRs are in an electro-refractive index (e.g.,
VG1=VG2=3.214 V), seeking the same transmittances in both drop-ports (D11 and D21). Figure 8(a) shows
the transmittance spectra at ports T2 (solid curve), D11 (dashes), and D21 (dots). As can be observed from this
figure, both GSRRs resonance at λ∼1551.68 nm, where the transmittance at T2 is nearly zero (i.e.,< 0.8%) and
those at the two drop-ports are the same (∼ 42.25%). Figure 8(b) illustrates the corresponding mode intensity
distribution at the resonance wavelength, showing that the incident light upon arrival within the coupling region
couples equally to both GSRRs and enhances there. The enhanced light in either GSRR partly couples to the

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 8. (a) Transmission spectra at ports T2, D11, D21, for VG1=VG2=3.214 V, (b) The corresponding mode intensity distribution
across the proposed device at resonance wavelengths λ = 1551.68 nm.

Figure 9. (a) Transmission spectra at ports T2 (solid curve), D11 (dashed curves), and D21 (dotted curves) for (a) various ΔW at the
biassing condition of VG1(G2)=2.826 (1.151) V, and (b) various ΔR at the biassing condition of VG1(G2)=3.541 (1.151) V. Effects of
the tolerances (a) ΔW and (d) ΔR on the peak of transmittance T2 (left axis) and the resonance wavelength (right axis).

adjacent drop-waveguide and transmits out via the corresponding drop-port. Notice, aligning the centre
frequencies of two rings into the bus waveguides coupled to the ring resonators is not easy and requires precision
in lithography [49].
An important issue, in practice, is the effects of the fabrication uncertainties (tolerances) in the geometrical
dimensions of the fabricated device on its performance. Some research groups have developed various
techniques, like improving the electron beam lithography and etching accuracy [50] and adjusting the resonance
wavelengths after etching [51] to reduce the fabrication uncertainties, affecting the dimensions like R, W, and the
coupling gaps g1(2). Hence, we investigated the impacts of the fabrication uncertainties for these designed

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

Figure 10. Transmission spectra at ports T2 (solid curve), D11 (dashed curves), and D21 (dotted curves) for (a) various Δg1 at the
biassing condition of VG1(G2)=2.826 (1.151) V, and (b) various Δg2 at the biassing condition of VG1(G2)=3.541 (1.151) V. Effects of
the tolerances (c) Δg1 and (d) Δg2 on the peak of transmittance T2 (left axis) and the resonance wavelength (right axis).

parameters (i.e., ΔR, ΔW, and Δg1(2)) on the resonance wavelength of the GSRRs. Depending on the fabrication
techniques and equipment, fabrication error-induced uncertainty in SOI fabrication varies from sub-
nanometer nm to 3 nm. Consequences of achieving fluctuations (fabrication tolerances) below 1 nm are the
increase in time, cost, and complexity of the fabrication technique. Figures 9(a) and (b) show the results of the
simulated transmission spectra for the fabrication tolerances of −3 nm„ΔW„3 nm, and −3 nm„ΔR„3
nm while assuming the other geometrical parameters are their nominal values (table 1). These plots show the
sensitivity of the transmissions peaks and the related resonant wavelengths to the fabrication tolerances in the
ring radius and width (ΔR and ΔW). In other words, to achieve the desired resonance wavelength, one needs to
precisely control the fabrication tolerances in the ring radius and width, minimizing the related uncertainties.
These two uncertainties produce fluctuations in the GSRRs effective index (i.e., Δneff) and the roundtrip length
(i.e., ΔL≡2πΔR), resulting in a shift in the resonance wavelength (i.e., Δλ=Δneff ΔL/m=2πΔneff ΔR/m).
Hence, a minute fluctuation in either the effective index or the round trip length can result in a relatively
significant shift in the resonance wavelength. Figures 9(c) and (d) show the variations in the transmission peak
(T2) and the resonance wavelength versus ΔW and ΔR, extracted from parts (a) and (b), respectively. As seen
from these two figures, the dependencies of the shift in the resonance wavelength on ΔW and ΔR are almost
linear. However, this is not the case for ΔT2. Moreover, for ΔW(ΔR) <0, the resonance wavelengths experience
a blueshift. On the contrary, For ΔW(ΔR) >0, the resonance wavelengths experience a redshift.
Finally, we analyzed the effects of the fabrication tolerance in the coupling gaps between the bus(drop)
waveguide(s) and the rings (Δg1(2)) on the transmittances through ports T2, D11(21), and the related resonant
wavelengths. Figure 10 shows these effects for uncertainties in the range of −10 nm„Δg1(2)„10 nm while
keeping the other geometrical at the nominal values (table 1). As seen from this figure, a Δg1(2) = ±5 nm
tolerance in g1(2) causes a negligible shift of∼m5 pm in the resonance wavelengths and an insignificant change in
the transmittance. The latter is due to the coupling-induced wavelength shift phenomenon, which is the
consequence of the tolerances in the lithography and the etching processes [52]. For devising such gaps between
the rings and straight through and drop waveguides, one should employ nanolithography via direct e-beam
writing, focused ion beam milling, or high precision wafer steppers [49].

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Phys. Scr. 96 (2021) 125536 A Bagheri et al

4. Conclusion

We have proposed an ultra-compact Si-based switchable optical beam splitter/filter. Utilizing graphene-based
electro-absorptive (refractive) modulation, one can tune the transmission channels of this beam splitter (filter)
without any mechanical manipulation. The proposed beam splitter consists of a through-waveguide coupled to
two drop-waveguides via two GSRRs. Due to the precise modulation of the graphene sheets by external voltages,
the newly designed switchable beam splitter (filter) is a potential alternative for the conventional electro- and
thermo-optically tuned counterparts suitable for DWDM optical communication systems. The simulation
results show that by changing the applied voltage from 1.585 to 3.541 V, the resonance wavelength of GSRR in
electro-refractive experiences a blue shift of ∼0.61 nm. Simulation results also show when both GSRRs are in the
electro-absorptive mode, ∼72.5% of the input light intensity transmits out of the through-port, and the outputs
from the drop-ports are <0.5%. When both GSRRs are in the electro-refractive mode, both drop-ports
experience the same split-ratios of ∼42.25%. Nevertheless, when one GSRR becomes electro-refractive and the
second one is electro-absorptive, the drop-port adjacent to the former GSRR experiences split-ratio∼68.4%,
and the transmission through other drop-port is insignificant. Due to the device’s structural symmetry, the
CMOS-compatible optical device can act as a bidirectional splitter suitable for DWDM applications. Simulation
results also show that one should decrease the fabrication error for the proposed device to perform as desired.

Data availability statement

The data that support the findings of this study are available upon reasonable request from the authors.

Funding

No funding was received for this work.

Disclosures

The authors declare no conflicts of interest.

ORCID iDs

Amin Bagheri https://orcid.org/0000-0002-0107-6475

Fakhroddin Nazari https://orcid.org/0000-0001-9905-8090
Mohammad Kazem Moravvej-Farshi https://orcid.org/0000-0002-8954-6418

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