3 - Cleanroom

Xing Sheng, EE@Tsinghua
Principles of Micro- and Nanofabrication

for Electronic and Photonic Devices
Cleanroom, Wafer Clean and

Gettering
Xing Sheng 盛兴
Department of Electronic Engineering

Tsinghua University
xingsheng@tsinghua.edu.cn
1
Integrate Circuits
 Moore's law
transistor number transistor size 5

Technology Evolution
1947 today
1 cm < 100 nm
6
Factory Evolution
 cost of new fab today

 1967 2 million $
 2010 10 billion $
Video TSMC
< 100 nm
2016 长江存储，武汉
24 billion $$ 7
Process Simulations
 Silvaco
https://www.silvaco.com/products/tcad/process_simulation/victory_process/victory_process.html 8
Manufacturing Yield
 Yield: rate of success

assume yield = 99% per step:
0.994 = 0.96
0.99400 = 0.02
every 1% yield means $$$ 9

Manufacturing Defects
10
Defects in Silicon
11
Defects in Silicon
Q: why?
dopants
deep level defects

Na, K, Au, Cu, Fe, O, ... 12
Defects in Silicon
ions in gate oxide dopants
deep level defects in Si
13
Defects in Silicon
Deep level defects

(e.g. Au) reduce
minority carrier
lifetime in Si
bad for solar cells
14
Defects
recombination at defect sites

reduce efficiencies of LEDs / solar cells
15
Diffusion of Defects
Liquid Solid
C concentration (mol/m3)
J diffusion flux (mol/m2/s)
D diffusivity (m2/s) 16
Diffusion of Defects
 Diffusivity (扩散系数) D
 rate of spread
 unit: cm2/s
fast
EA
D  D0 exp(  )
kT
slow
 Diffusion length L
L  Dt Q: why?
diffusivity of defects in Si 17
Defect Diffusivity in Silicon
Si, B, P, As, Sb, ... Cu, Fe, Li, H, Au, ...
Slow Fast
18
Defects in Oxide
defect density
2 s qN A ( 2 f ) qQM
Vth  VFB  2 f  
Cox Cox
Na, K, ...
alkali ions (Na, K, ...)

in gate oxide
19
Defects on Surface
Ebd (MV/cm)
Ebd (MV/cm)
Surface roughness (nm) Surface roughness (nm)
Surface roughness reduces breakdown voltages (Ebd) 20

Defects Control
environment cleanroom control
surface clean
Si wafer gettering
21
Contaminations
particles:
- hair
- pollen
- bacteria
- PM2.5
- ...
chemicals:
- organics
- Cu, Au
- Na, K
- ...
22
Sources of Contaminations
particles
from human
sitting walking running

100,000 /min 1,000,000 /min 10,000,000 /min
23
Particles
24
IC Roadmap
25
Cleanroom
class X:
less than X particles larger than 0.5 m
per cubic feet 26
Cleanroom
class X:
per cubic feet 27
Cleanroom
'PM2.5 index'
<< 1 g/m3
class X:
per cubic feet 28
Defects Control
surface clean
Si wafer gettering
29
Defects in Water
defects in water
effects of water cleaning on transistor performance
water resistivity leakage current

(M*cm, at 25 oC) (A/m2)
5 12*10-9
10 10*10-9
13 5*10-9
15 1*10-9 30
Water
 Types
 purified water, distilled water, tapping water, ...
 自来水，矿泉水，纯净水，超纯水，蒸馏水，...
 In cleanroom, deionized (DI) water (去离子水) is used

 free of any mineral ions
 only H+, OH-
H2O <-> H+ + OH-
 In water, at 25 oC
 [H+]*[OH-] = Kw = 10-14 (mol/L)2
 in DI water, [H+] = [OH-] = 10-7 mol/L, pH = 7.0
 resistivity = 18.5 M*cm
31
Si Wafer Clean
 Ultrasonic / megasonic clean in DI water
remove: large particles,

water soluble ions (Na, K, Cl, ...) 32
Standard Si Wafer Clean (RCA)

 Step 1 (SC-1)
 NH4OH : H2O2 : H2O = 1:1:5, at 80 oC, 10 mins
 remove organic residues
 Step 2
 HF : H2O = 1:50, at 25 oC, 20 secs
 remove native SiO2
 Step 3 (SC-2)
 HCl : H2O2 : H2O = 1:1:6, at 80 oC, 10 mins
 remove metals
 Step 4
 clean in DI water
https://en.wikipedia.org/wiki/RCA_clean 33
Metal Removal
34
Other Si Clean Recipes

 Piranha clean
 SPM: Sulfuric-Peroxide Mixture
 H2SO4 : H2O2 = 3:1, 10–30 mins
 extremely exothermic, self heating up to 80 oC
 remove organic residues and some metals
 Ozone (O3) clean

 H2O + O3
 Organic solvent 'wet' method

 Acetone / Isopropanol / DI water
 not used for standard CMOS process!
35
Other Si Clean Recipes

 UV Ozone clean
 clean organic residues
 Plasma clean
 clean organic residues
'dry' method
36
Clean other Materials
 SiO2 (glass, quartz, ...)

 piranha clean, H2SO4 : H2O2 = 3:1, 10–30 mins
 SC-1, NH4OH : H2O2 : H2O = 1:1:5, at 80 oC, 10 mins
 GaAs
 NH4OH : H2O = 1:10, for stoichiometric surface (Ga/As 1:1)
 H3PO4 or HCl, for As rich surface
 Acetone / Isopropanol / DI water

 generally works well for most non-CMOS process
37
Surface roughness (nm)

Surface Roughness
Surface roughness (nm)
Surface Roughness of Si after cleaning

ammonia (NH4OH) and HF slightly etches Si 38
Defects Control
surface clean
Si wafer gettering
39
Gettering（吸杂）
 'gettering' in the vacuum tube

 use titanium to absorb gases in vacuum tubes
titanium
40
Si Wafer Gettering（吸杂）
intrinsic gettering
extrinsic gettering:
Si3N4, P2O5, ... 41

 intrinsic gettering
easy
hard
O defects in Si diffusivity of defects 42

 Minority carrier lifetime
Au doped Si: 10-9 s
Typical Si: 10-6 s
Gettered Si: 10-3 s
43
Principles of Micro- and Nanofabrication

for Electronic and Photonic Devices
Lab Safety
Xing Sheng 盛兴
Department of Electronic Engineering

Tsinghua University
xingsheng@tsinghua.edu.cn
44
Lab Safety
 Chemicals
 HF, H2SO4, ...
 KOH, NH4OH, ...
 Acetone, ...
 Electricity
 instruments, ...
 Fires
 Acetone, Alcohol, ...
 Sharps
 silicon, glass, ...
 ...
45
Lab Safety
 Lab orientation
 exits, showers, ...
 Proper protection
 gloves, goggles, aprons, ...
 Materials Data Safety Sheets (MSDS)
 ...
46
Lab Safety
 Materials Data Safety Sheets (MSDS)
47
Chemical Safety
 NFPA diamond
 0: no hazard
 4: highest risk
HF acetone H2O2
48
Chemical Safety
 Choose proper containers
 Most solvents
 glass, Teflon, ...
 Be careful
 alkali (NaOH, etc) slowly etches glass
 HF strongly etches glass!
glass art by HF etch

49
Chemical Safety
glass art by HF etch

50
Radiation Safety
XRD SEM & TEM Ebeam Evaporator

51
Laser Safety
wear goggles
Q: O.D.
52
Biological Safety
53
Cleanroom Orientation
Video
always gown up!

54
Process References
https://cleanroom.byu.edu
55

3 - Cleanroom

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3 - Cleanroom

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Xing Sheng, EE@Tsinghua

Principles of Micro- and Nanofabrication

Cleanroom, Wafer Clean and

Department of Electronic Engineering

transistor number transistor size 5

 cost of new fab today

 Yield: rate of success

every 1% yield means $$$ 9

deep level defects

Deep level defects

bad for solar cells

recombination at defect sites

J diffusion flux (mol/m2/s)

Defect Diffusivity in Silicon

Si, B, P, As, Sb, ... Cu, Fe, Li, H, Au, ...

alkali ions (Na, K, ...)

Surface roughness (nm) Surface roughness (nm)

Surface roughness reduces breakdown voltages (Ebd) 20

environment cleanroom control

sitting walking running

environment cleanroom control

effects of water cleaning on transistor performance

water resistivity leakage current

 In cleanroom, deionized (DI) water (去离子水) is used

 Ultrasonic / megasonic clean in DI water

remove: large particles,

Standard Si Wafer Clean (RCA)

Other Si Clean Recipes

 Ozone (O3) clean

 Organic solvent 'wet' method

Other Si Clean Recipes

Clean other Materials

 SiO2 (glass, quartz, ...)

 Acetone / Isopropanol / DI water

Surface roughness (nm)

Surface roughness (nm)

Surface Roughness of Si after cleaning

environment cleanroom control

 'gettering' in the vacuum tube

Si3N4, P2O5, ... 41

O defects in Si diffusivity of defects 42

 Minority carrier lifetime

Au doped Si: 10-9 s

Typical Si: 10-6 s

Gettered Si: 10-3 s

Principles of Micro- and Nanofabrication

Department of Electronic Engineering

 Materials Data Safety Sheets (MSDS)

 Materials Data Safety Sheets (MSDS)

 Choose proper containers

glass art by HF etch

glass art by HF etch

XRD SEM & TEM Ebeam Evaporator

always gown up!

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