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1
2 CHAPTER 1. ELECTRONICS
The energy of a hole is higher, the farther it is from the top of the valence
band.
[scale=0.5]electronic1.jpg
Figure 1.1: *
+4 represents Ge or Si
Since each free electron creates only one hole, the number density of free electrons(ne )
is equal to the number density of holes(nh ) which are equal to the intrinsic charge
carrier concentration (ni ).
ne = nh = ni
The total current is given by,
I = Ie + Ih
1.3 Doping
What are the limitations of an intrinsic semiconductor?
They have low intrinsic charge carrier concentration (of both holes and
electrons).
They cannot have higher hole or electron concentration. Thus, have less
usefulness.
The dopant atom should neatly replace the semiconductor atom. For
this, the size of the dopant atom should be of nearly the same size as the
semiconductor atom.
Doping does not disturb the overall charge neutrality of the semiconductor.
[scale=0.5]electronic2.jpg
Figure 1.2: *
+5 represents pentavalent impurity
ne >> nh
Figure 1.3: *
Energy Level Diagram for n-type
1.5. ENERGY BANDS IN SOLIDS 5
nh >> ne
Figure 1.4: *
Energy Level Diagram for p-type
ne nh = n2i
σ = µh nh e + µe ne e
Figure 1.5: *
Energy Level Diagrams
1.6. P-N JUNCTION 7
If the positive terminal of the battery is connected to the p-side and the negative
terminal is connected to the n-side, then the p-n junction is said to be forward
biased. For an ideal diode, its resistance reduces to 0 and thus, it is short
circuited. When the applied voltage V exceeds the barrier potential VB , a large
forward current ([m]) flows in the circuit.
If the positive terminal of the battery is connected to the n-side and the negative
terminal is connected to the p-side, then the p-n junction is said to be reverse
biased. For an ideal diode, its resistance increases to ∞ and thus, it is an open
circuit. A small reverse current ([µ]) flows in the circuit. Find the current in
the circuit. Thus, the current is,
10
i= =1
9+1
8 CHAPTER 1. ELECTRONICS
Figure 1.6: *
Symbol for p-n junction diode
[scale=0.5]electronic3.png
10 CHAPTER 1. ELECTRONICS
Avalanche Breakdown
Find the current in the circuit, given Vk = 0.7 . The current is,
V − Vk 10.7 − 0.7
i= = = 10[m]
R 1000
Find the main line current. First, consider the diode to be reverse biased,
we find that VA > VB , thus current flows from A to B, hence, the diode is not
reverse biased.
Now, since the diode is forward biased,
25 525
Req = [k] i = 25 = 252[m]
12 12
2i0 i0
idc =< i >= ∧ irms = √
π 2
1.8.3 Photodiodes
It is a p-n junction fabricated from a photosensitive semiconductor and provided
with a transparent window so as to allow light ti fall on its junction. It is used
in reverse bias. Uses of photodiodes.
In light-operated switches
In electronic counters
1.9.1 Emitter
It is a section on one side of the transistor. It is of moderate size and heavily
doped semiconductor. It supplies majority charge carriers.
1.9.2 Base
It is the middle section. It is the smallest in size and least doped semiconductor.
It controls the flow of charge carriers from emitter to base.
1.9.3 Collector
It is a section on the other side of the transistor. It is the largest in size and
moderately doped semiconductor. It collects the majority charge carriers.
Size: Collector > Emitter > Base
Doping: Emitter > Collector > Base
E-B is forward biased and C-B is reverse biased.
IE = IB + IC (IB << IC )
Input Characteristic
A graph showing the variation of base current IB with base-emitter VBE at con-
stant collector-emitter voltage VCE called the input character of the transistor.
The input resistance ri of the transistor in CE configuration is defined as the
ratio of small change in base-emitter voltage to the corresponding small change
in the base current, when the collector-emitter voltage is kept fixed.
∆VBE
ri =
∆IB VCE
Output Characteristic
A graph showing the variation of collector current IC with collector-emitter
voltage VCE at constant base-current IB .
The shaded region towards the left is called saturation region and the
line is saturation line. Here IC does not depend on the input current IB .
VCE < VBE .
In the cut-off region, both the junctions are reverse biased. Here, IC = 0
and the transistor works like a switch.
biased.
1.9. JUNCTION TRANSISTOR 15
Transfer Characteristic
It is a graph showing the variation of collector current IB with base current IC
at constant collector-emitter voltage VCE . It is a straight line.
Cut-off Region
When Vi increases to a low value, there is not enough forward bias to start a
forward current. (IB IC = 0)Vo = VC C.
Active Region
When Vi is further increased, the transistor is said to be in active state.
1
Vi ∝ IC ∝ IC RC ∝
Vo
Here, the output voltage decreases almost linearly with input voltage.
Saturation Region
When Vi is high, large IC flows which causes the emitter-collector to also be
forward biased. Thus, Vo ≈ 0. The transistor is said to be in saturation state
because it cannot pass any more collector current IC .
Transductance
It is defined as the ratio of the small change in the collector current to the small
change in the emitter-base voltage. It is also called transfer of conductance.
∆IC
gm = ...
∆VBE
It depends on the geometry, doping levels and biasing of the transistor.
Amplifier
It is a circuit which is used for increasing the voltage, current or power of
alternating form. The A.C. voltage gain of an amplifier is defined as the ratio
of the change in the output voltage Vo to the corresponding change in the input
voltage Vi .
∆Vo
Av =
∆Vi
Vo = VCE = VCC − IC RL
∆VCE
Av =
∆VBE
Also,
∆VCE = −Ro ∆IC ∧ ∆VBE = Ri ∆IB
The negative sign indicates that the input and output voltages have a phase
difference of π.
Ro
Av = Ai Ar (Ar = )
Ri
1.10. CIRCUITS 17
(∆IC )Ro
Ap = = A2i Ar
(∆IB )Ri
1.10 Circuits
1.10.1 Analog Circuits
A signal in which current or voltage varies continuously with time. The elec-
tronic circuits which process analog signals are called analog circuits.
1.11.2 OR
The OR operator is +. It takes in two inputs and gives one output.
Y =A+B
1.11.3 NOT
The NOT operator is¯. It takes in one input and gives one output.
Y = Ā
1.11.4 NAND
It is a combination of NOT and AND gate.
Y =A·B
18 CHAPTER 1. ELECTRONICS
1.11.5 NOR
It is a combination of NOT and OR gate.
Y =A+B
The NAND and NOR gates are called the universal gates.
1.11. LOGIC GATES AND BOOLEAN ALGEBRA 19
[scale=0.5]electronic4.png
22 CHAPTER 1. ELECTRONICS
[scale=0.3]electronic5.jpg
[scale=0.3]electronic6.png
Figure 1.7: *
I1 > I2 > I3
Figure 1.8: *
n-p-n Transistor
26 CHAPTER 1. ELECTRONICS
Figure 1.9: *
p-n-p Transistor
1.11. LOGIC GATES AND BOOLEAN ALGEBRA 27
Figure 1.10: *
Common Base Connection
28 CHAPTER 1. ELECTRONICS
[scale=0.5]electronic7.jpg
[scale=0.5]electronic8.jpg
[scale=0.7]electronic9.jpg
Figure 1.11: *
Transfer Characteristic of Base-Biased Transistor
30 CHAPTER 1. ELECTRONICS
Figure 1.12: *
n-p-n transistor as CE Amplifier (If p-n-p transistor is used, the polarity of
cells is reversed)
1.11. LOGIC GATES AND BOOLEAN ALGEBRA 31
Figure 1.13: *
AND Gate
Figure 1.14: *
Realization of AND Gate
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
Figure 1.16: *
OR Gate
Figure 1.17: *
Realization of OR Gate
A B Y
0 0 0
0 1 1
1 0 1
1 1 1
Figure 1.18: *
Truth Table for OR Operator
1.11. LOGIC GATES AND BOOLEAN ALGEBRA 33
Figure 1.19: *
NOT Gate
34 CHAPTER 1. ELECTRONICS
Figure 1.20: *
Realization of NOT Gate
A Y
0 1
1 0
Figure 1.21: *
Truth Table for NOT Operator
1.11. LOGIC GATES AND BOOLEAN ALGEBRA 35
Figure 1.22: *
NAND Gate
Figure 1.23: *
NOR Gate