DAGA Lab9

SAINT LOUIS UNIVERSITY
School of Engineering and Architecture

Department of Electronics Engineering
In Partial Requirements of the Course

ME 2251L: Basic Electronics Laboratory
Laboratory Activity 9
Transistor Biasing
Submitted by: Submitted to:

Daga, Kristan O’neal Cervantes Engr. Jeorge C. Antonio
SEA-ECE Faculty
Date Submitted:
I. TOPIC LEARNING OUTCOME
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means, electronic, mechanical, photocopying, recording, or otherwise of any part of this document, without the prior written permission of SLU, is strictly prohibited. 1
TLO 9: Illustrate the transistor as a switching device and measure transistor base and collector
currents.
II. DISCUSSION OF THEORY
The steady state operation of a transistor depends a great deal on its base current, collector voltage,
and collector current values and therefore, if the transistor is to operate correctly as a linear
amplifier, it must be properly biased around its operating point.
Establishing the correct operating point requires the selection of bias resistors and load resistors to
provide the appropriate input current and collector voltage conditions. The correct biasing point for a
bipolar transistor, either NPN or PNP, generally lies somewhere between the two extremes of
operation with respect to it being either “fully-ON” or “fully-OFF” along its DC load line. This
central operating point is called the “Quiescent Operating Point”, or Q-point for short.
When a bipolar transistor is biased so that the Q-point is near the middle of its operating range, that
is approximately halfway between cut-off and saturation, it is said to be operating as a Class-A
amplifier. This mode of operation allows the output voltage to increase and decrease around the
amplifiers Q-point without distortion as the input signal swings through one complete cycle. In other
words, the output is available for the full 360o of the input cycle.
So how do we set this Q-point biasing of a transistor? – The correct biasing of the transistor is
achieved using a process known commonly as Base Bias.
But before we start looking at the possible different transistor biasing arrangements, lets first remind
ourselves of a basic single transistor circuit along with its voltages and currents as shown on the left.
The function of the “DC Bias level” is to correctly set the transistors Q-point by setting its Collector
current ( IC ) to a constant and steady state value without any external input signal applied to the
transistors Base.
This steady-state or DC operating point is set by the values of the circuits DC supply voltage ( Vcc )
and the value of any biasing resistors connected the transistors Base terminal.
Since the transistors Base bias currents are steady-state DC currents, the appropriate use of coupling
and bypass capacitors will help block any biasing currents from other transistor stage affecting the
bias conditions of the next. Base bias networks can be used for Common-base (CB), common-
collector (CC) or common-emitter (CE) transistor configurations. In this simple transistor biasing
tutorial we will look at the different biasing arrangements available for a Common Emitter
Amplifier.
Base Biasing a Common Emitter Amplifier

One of the most frequently used biasing circuits for a transistor circuit is with the self-biasing of the
emitter-bias circuit were one or more biasing resistors are used to set up the initial DC values for the
three transistor currents, ( IB ), ( IC ) and ( IE ).
The two most common forms of bipolar transistor biasing are: Beta Dependent and Beta
Independent. Transistor bias voltages are largely dependent on transistor beta, ( β ) so the biasing set
up for one transistor may not necessarily be the same for another transistor as their beta values may
be different. Transistor biasing can be achieved either by using a single feed back resistor or by
using a simple voltage divider network to provide the required biasing voltage.
The following are five examples of transistor Base bias configurations from a single supply ( Vcc ).
Fixed Base Biasing a Transistor
The circuit shown is called as a “fixed base bias circuit”, because the transistors base
current, IB remains constant for given values of Vcc, and therefore the transistors operating point
must also remain fixed. This two resistor biasing network is used to establish the initial operating
region of the transistor using a fixed current bias.
This type of transistor biasing arrangement is also beta dependent biasing as the steady-state
condition of operation is a function of the transistors beta β value, so the biasing point will vary over
a wide range for transistors of the same type as the characteristics of the transistors will not be
exactly the same.
The emitter diode of the transistor is forward biased by applying the required positive base bias
voltage via the current limiting resistor RB. Assuming a standard bipolar transistor, the forward base-
emitter voltage drop would be 0.7V. Then the value of RB is simply: (VCC – VBE)/IB where IB is
defined as IC/β.
With this single resistor type of biasing arrangement the biasing voltages and currents do not remain
stable during transistor operation and can vary enormously. Also the operating temperature of the
transistor can adversely effect the operating point.
Collector Feedback Biasing a Transistor
This self biasing collector feedback configuration is another beta dependent biasing method which
requires two resistors to provide the necessary DC bias for the transistor. The collector to base
feedback configuration ensures that the transistor is always biased in the active region regardless of
the value of Beta (β). The DC base bias voltage is derived from the collector voltage VC, thus
providing good stability.
In this circuit, the base bias resistor, RB is connected to the transistors collector C, instead of to the
supply voltage rail, Vcc. Now if the collector current increases, the collector voltage drops, reducing
the base drive and thereby automatically reducing the collector current to keep the transistors Q-
point fixed. Therefore this method of collector feedback biasing produces negative feedback round
the transistor as there is a direct feedback from the output terminal to the input terminal via
resistor, RB.
Since the biasing voltage is derived from the voltage drop across the load resistor, RL, if the load
current increases there will be a larger voltage drop across RL, and a corresponding reduced collector
voltage, VC. This effect will cause a corresponding drop in the base current, IB which in turn,
brings IC back to normal.
The opposite reaction will also occur when the transistors collector current reduces. Then this
method of biasing is called self-biasing with the transistors stability using this type of feedback bias
network being generally good for most amplifier designs.
Dual Feedback Transistor Biasing
Adding an additional resistor to the base bias network of the previous configuration improves
stability even more with respect to variations in Beta, ( β ) by increasing the current flowing through
the base biasing resistors.
The current flowing through RB1 is generally set at a value equal to about 10% of collector
current, IC. Obviously it must also be greater than the base current required for the minimum value of
Beta, β.
One of the advantages of this type of self biasing configuration is that the two resistors provide both
automatic biasing and Rƒ feedback at the same time.
Transistor Biasing with Emitter Feedback
This type of transistor biasing configuration, often called self-emitter biasing, uses both emitter and
base-collector feedback to stabilize the collector current even further. This is because
resistors RB1 and RE as well as the base-emitter junction of the transistor are all effectively connected
in series with the supply voltage, VCC.
The downside of this emitter feedback configuration is that it reduces the output gain due to the base
resistor connection. The collector voltage determines the current flowing through the feedback
resistor, RB1 producing what is called “degenerative feedback”.
The current flowing from the emitter, IE (which is a combination of IC + IB) causes a voltage drop to
appear across RE in such a direction, that it reverse biases the base-emitter junction.
So if the emitter current increases, due to an increase in collector current, voltage drop I*RE also
increases. Since the polarity of this voltage reverse biases the base-emitter junction, IB automatically
decrease. Therefore the emitter current increase less than it would have done had there been no self
biasing resistor.
Generally, resistor values are set so that the voltage dropped across the emitter resistor RE is
approximately 10% of VCC and the current flowing through resistor RB1 is 10% of the collector
current IC.
Thus this type of transistor biasing configuration works best at relatively low power supply voltages.
Voltage Divider Transistor Biasing
Here the common emitter transistor configuration is biased using a voltage divider network to
increase stability. The name of this biasing configuration comes from the fact that the two
resistors RB1 and RB2 form a voltage or potential divider network across the supply with their center
point junction connected the transistors base terminal as shown.
This voltage divider biasing configuration is the most widely used transistor biasing method. The
emitter diode of the transistor is forward biased by the voltage value developed across resistor RB2.
Also, voltage divider network biasing makes the transistor circuit independent of changes in beta as
the biasing voltages set at the transistors base, emitter, and collector terminals are not dependant on
external circuit values.
To calculate the voltage developed across resistor RB2 and therefore the voltage applied to the base
terminal we simply use the voltage divider formula for resistors in series.
Generally the voltage drop across resistor RB2 is much less than for resistor RB1. Clearly the
transistors base voltage VB with respect to ground, will be equal to the voltage across RB2.
The amount of biasing current flowing through resistor RB2 is generally set to 10 times the value of
the required base current IB so that it is sufficiently high enough to have no effect on the voltage
divider current or changes in Beta.
The goal of Transistor Biasing is to establish a known quiescent operating point, or Q-point for the
bipolar transistor to work efficiently and produce an undistorted output signal. Correct DC biasing of
the transistor also establishes its initial AC operating region with practical biasing circuits using
either a two or four-resistor bias network.
In bipolar transistor circuits, the Q-point is represented by ( VCE, IC ) for the NPN transistors or
( VEC, IC ) for PNP transistors. The stability of the base bias network and therefore the Q-point is
generally assessed by considering the collector current as a function of both Beta (β) and
temperature.
Here we have looked briefly at five different configurations for “biasing a transistor” using resistive
networks. But we can also bias a transistor using either silicon diodes, zener diodes or active
networks all connected to the transistors base terminal. We could also correctly bias the transistor
from a dual voltage power supply if so wished.
III. DATA AND RESULTS
LABORATORY ACTIVITY 9
EQUIPMENT/ MATERIALS NEEDED:
Power Source - 0-6Vdc, 150mA

2 VOM
Practical Electronic Trainer
DS1 - Miniature Lamp, 5V-1W
Component Board M
Q1 - NPN Transistor, 2N2219A
Q2 - PNP Transistor, 2N2905A
R1 - 470Ω, 1W
R2 - Potentiometer
S1 - SPDT
PROCEDURES:
Objective A: Determine proper biasing polarity and measure base and collector currents of
NPN and PNP transistors in switching circuits.
1. a. Examine the on-off switching circuit shown in figure 1. Switch S1 is used to connect the base
of NPN transistor Q1 to either the emitter or +6 Vdc. Series resistor R1 limits the base-to-
emitter voltage drop.
Calculate the maximum current that can flow through R1 using a 6 Vdc source. Disregard the
base-to-emitter voltage drop.
IR1 = _______3/235_________mAdc
a. Connect the circuit shown in figure 1.
Insert MultiSim Screenshot:
b. Adjust the power source to 6 Vdc. Operate S1 several times while observing lamp DS1 and
the two milliammeters. Does the lamp go on and off depending on the position of S1?
____Yes_______
c. Measure base and collector currents with lamp DS1 on.
IB = ________10.853________mA
IC = _______230.583_________mA
d. Measure the base-to-emitter and collector-to-emitter voltages with lamp DS1 on. Use the
VOM for these measurements.
VBE = _____0.899272___________Vdc
VCE = _____0.235425___________Vdc
e. Throw switch S1 to the opposite position causing DS1 to go out.

f. Measure base and collector currents with lamp DS1 off.
IB = ______-355.271 pA__________mA
IC = _____6.084 nA___________mA
g. Measure base-to-emitter and collector-to-emitter voltages with lamp DS1 off.
VBE = _______41.849 n__________Vdc
VCE = _______6__________Vdc
h. Return the voltage to zero.
2. a. Examine the on-off switching circuit shown in Figure 2. Note it is identical circuit used in
procedure 1 except now a PNP transistor Q2 is being used and the power source and
metering polarities have been reversed.
a. Connect the circuit shown in Figure 2.
b. Repeat procedure 1 recording the following on-off measurements for the PNP switching
circuit.
With lamp DS1 on:
IB = ______10.512_______mA
IC = ____216.934_________mA
VBE = _______1.059______Vdc
VCE = ____0.576649_________Vdc
With lamp DS1 off:
IB = _______-266.461 pA_______mA
IC = ______6.217 nA________mA
VBE = _____43.203 nV_________Vdc
VCE = ________6______Vdc
c. Return the voltage to zero
d. Are your measured values for the PNP switching circuit similar, except for polarity to your
NPN measurements? _____Yes________
Objective B: Demonstrate and measure transistor base and collector currents when the
transistor is used as a variable lamp controller.
3. a. Examine the transistor lamp control circuit shown in Figure 3.
a. Does the potentiometer R2 act as a variable voltage divider in this circuit? __Yes___
What is the voltage range at the arm of R2 as it is turned from full ccw to full cw?
_____0_____Vdc to ____6_______Vdc
b. Connect the circuit shown in Figure 3. Set the arm of R2 to its full ccw position for
minimum resistance in the base-emitter circuit.
c. Adjust the power source to 6Vdc.
d. Rotate the arm of R2 to its full cw position and back several times noting the change in
the lamp brightness.
e. Adjust R2 for exactly 125mAdc of collector current.
f. Measure and record in Table 1 the base current for a collector current of 125mAdc.
g. Repeat (g) for each of the collector currents listed in Table 1.
h. Return the voltage to zero.
i. Calculate and record the current gain for your transistor at each of the lC values listed in
Table 1, using the equation:
Current Gain,â = IC / IB
j. Examine the data recorded in Table 1. Is the current gain of your transistor the same each
of the value of collector current? ____No______
Collector Current Base Current Current Gain, â

IC, mA IB, mA IC/ IB
125 mA 1.371 91.174
100 mA 0.984162 101.609
75 mA 0.659953 113.644
50 mA 0.397267 125.859
25 mA 0.167104 149.607
0 mA -0.044409 0
IV. DOCUMENTATION OF ACTIVITY
V. OBSERVATIONS
For a transistor to function, the two PN junctions must be properly biased. The base-emitter
junction behaves like any other PN junction when viewed alone. If the base-emitter junction is
forward biased, the transistor is on. If it is reverse biased, the transistor is off. This is just like a
diode. If you forward bias a diode, the diode conducts. If you reverse bias the diode, the diode
cuts off.
Now, the base-emitter junction in a transistor is going to essentially turn the transistor on or off.
Now, the base-collector junction will not have that same power, but the base-emitter junction
will determine whether the transistor is turned on or off. The base-collector junction also behaves
as a pn junction, but it will not have the ability to cause it to turn on or off.
Now, when we're looking at these two scenarios here, the emitter has been taking out of the
circuit and there's no current and the emitter is essentially open. What we've done here is, we
connected a battery across the collector-base junction. In this case, the collector-base junction is
forward biased and we are experiencing a current flow, and this is much like a diode. In this
scenario, the same thing is reverse biased. The only difference is the clarity. The diode is
opposite. Now, there is no current. You see the flow meters here indicate no current here. They
did maintain that the current was flowing. Keep in mind in both cases, the emitter is open. It is
out of the circuit. We're just showing the fact that this behaves just like a diode and the base-
emitter would function just like a diode as well.
VI. CONCLUSIONS
Transistor Biasing is setting a transistor’s DC operating voltage or current conditions to the

correct level so that any AC input signal can be amplified correctly by the transistor. The steady-
state operation depends significantly on its base current, collector voltage, and collector current
values; therefore, if the transistor operates correctly as a linear amplifier, it must be adequately
biased around its operating point. Establishing the correct operating point requires the selection
of bias resistors and load resistors to provide the appropriate input current and collector voltage
conditions. The right biasing point for a bipolar transistor, either NPN or PNP, generally lies
between the two extremes of operation concerning either “fully-ON” or “fully-OFF” along its
DC load line. This central operating point is called the “Quiescent Operating Point,” or Q-point
for short. Transistors are one of the primarily used semiconductor devices used for various
applications, including amplification and switching. However, to achieve these functions
satisfactorily, the transistor must be supplied with a certain amount of current and voltage.
Setting these conditions for a transistor circuit is referred to as Transistor Biasing. This goal can
be accomplished by various techniques that give rise to different kinds of biasing circuits.
However, all of these circuits are based on the principle of providing right-amount of base
current, IB4
VII. REFERENCES
- Transistor Biasing and Biasing of Transistors, Electronics Tutorial (2012)

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SAINT LOUIS UNIVERSITY

School of Engineering and Architecture

In Partial Requirements of the Course

Submitted by: Submitted to:

I. TOPIC LEARNING OUTCOME

II. DISCUSSION OF THEORY

Base Biasing a Common Emitter Amplifier

Fixed Base Biasing a Transistor

Collector Feedback Biasing a Transistor

Transistor Biasing with Emitter Feedback

Voltage Divider Transistor Biasing

III. DATA AND RESULTS

Power Source - 0-6Vdc, 150mA

a. Connect the circuit shown in figure 1.

Insert MultiSim Screenshot:

c. Measure base and collector currents with lamp DS1 on.

Insert MultiSim Screenshot:

Insert MultiSim Screenshot:

e. Throw switch S1 to the opposite position causing DS1 to go out.

Insert MultiSim Screenshot:

Insert MultiSim Screenshot:

Insert MultiSim Screenshot:

With lamp DS1 on:

Insert MultiSim Screenshot:

Insert MultiSim Screenshot:

3. a. Examine the transistor lamp control circuit shown in Figure 3.

Insert MultiSim Screenshot:

Collector Current Base Current Current Gain, â

IV. DOCUMENTATION OF ACTIVITY

Transistor Biasing is setting a transistor’s DC operating voltage or current conditions to the

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