AON6786

30V N-Channel MOSFET

SRFET TM

General Description Product Summary

SRFETTM AON6786 uses advanced trench technology VDS 30V

with a monolithically integrated Schottky diode to provide ID (at VGS=10V) 85A
excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) < 2.9mΩ
suitable for use as a low side FET in SMPS, load RDS(ON) (at VGS = 4.5V) < 3.9mΩ
switching and general purpose applications.

100% UIS Tested

100% Rg Tested

DFN5X6
Top View D
Top View Bottom View

1 8 SRFETTM
2 7 Soft Recovery MOSFET:
3 6
Integrated Schottky Diode
4 5
G
PIN1
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 66 A
Pulsed Drain Current C IDM 240
Continuous Drain TA=25°C 22
IDSM A
Current TA=70°C 17
Avalanche Current C IAS, IAR 40 A
Avalanche energy L=0.1mH C EAS, EAR 80 mJ
TC=25°C 83
PD W
Power Dissipation B TC=100°C 33
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 42 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.1 1.5 °C/W

Rev1 : June 2011 www.aosmd.com Page 1 of 7

 AON6786

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.5 2 V
ID(ON) On state drain current VGS=10V, VDS=5V 240 A
VGS=10V, ID=20A 2.3 2.9
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.6 4.5
VGS=4.5V, ID=20A 3 3.9 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 115 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 V
IS Maximum Body-Diode Continuous CurrentG 85 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3500 4380 5250 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 340 490 640 pF
Crss Reverse Transfer Capacitance 160 280 400 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.7 1.0 Ω
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge 24 31 38 nC
Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A 8 11 14 nC
Qgd Gate Drain Charge 4 9 13 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 50 ns
tf Turn-Off Fall Time 7 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 9 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17 22 27 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev1 : June 2011 www.aosmd.com Page 2 of 7

 AON6786

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
3V VDS=5V
80 4.5V 80
7V
10V
60 60
ID (A)

ID(A)
125°C
40 40

20 20
25°C
VGS=2.5V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 2

Normalized On-Resistance
4 1.8
VGS=4.5V
VGS=4.5V ID=20A
1.6
RDS(ON) (mΩ )

3
17
1.4
5
2
VGS=10V VGS=10V 2
1.2
ID=20A 10
1
1

0 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

8 1.0E+02
ID=20A
1.0E+01 125°
6
1.0E+00
40
RDS(ON) (mΩ )

125°C 1.0E-01 25°

IS (A)

4
1.0E-02

2 1.0E-03

25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev1 : June 2011 www.aosmd.com Page 3 of 7

 AON6786

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 6000
VDS=15V
ID=20A 5000
8 Ciss

Capacitance (pF)
4000
VGS (Volts)

6
3000
4
2000

2 Coss
1000 Crss

0 0
0 20 40 60 80 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 10µs 160

RDS(ON) TJ(Max)=150°C
limited 10µs
TC=25°C
ID (Amps)

Power (W)

10.0
100µs 120 17
DC 1ms
5
1.0 10ms 80 2
10
TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=1.5°C/W 40
1

0.1 PD

Single Pulse Ton

T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev1 : June 2011 www.aosmd.com Page 4 of 7

 AON6786

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 100
IAR (A) Peak Avalanche Current

TA=25°C 80

Power Dissipation (W)

TA=100°C
100
60

TA=150°C 40
10
TA=125°C
20

1 0
1 10 100 1000 0 25 50 75 100 125 150
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

100 10000

TA=25°C
80 1000
Current rating ID(A)

Power (W)

60
17
100 5
2
40
10
10
20

1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
Thermal Resistance

1 RθJA=50°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev1 : June 2011 www.aosmd.com Page 5 of 7

 AON6786

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 0.7
20A 10A 5A
0.6
1.0E-02
0.5
VDS=30V
0.4

VSD (V)
IR (A)

1.0E-03
0.3
IS=1A
VDS=15V 0.2
1.0E-04
0.1

1.0E-05 0
0 50 100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs. Figure 18: Diode Forward voltage vs. Junction
Junction Temperature Temperature

30 12 14 4
di/dt=800A/µs 125ºC di/dt=800A/µs 125ºC
12 3.5
10
25
3
10 trr
Qrr 25ºC 8 25ºC 2.5
20
Qrr (nC)

8
trr (ns)
Irm (A)

S
6
125ºC 6
15 125ºC 1.5
Irm 4
4 S
25ºC 1
10
2 2 25ºC 0.5

5 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak Figure 19: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

30 20 21 4
Is=20A Is=20A
18 3.5
25 125ºC
15 trr 25ºC 3
15
20 25ºC 2.5
Qrr (nC)

12
Irm (A)

trr (ns)

125ºC
15 Qrr 10 2
S

9
1.5
10
6 S 25ºC
125ºC 5 1
5 Irm
3 0.5
25ºC 125º
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 20: Diode Reverse Recovery Charge and Peak Figure 21: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt

Rev1 : June 2011 www.aosmd.com Page 6 of 7

 AON6786

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev1 : June 2011 www.aosmd.com Page 7 of 7