Professional Documents
Culture Documents
Marks: 20
Statement. As a process engineer, you are given a task to dope an intrinsic silicon film with phosphorous atoms at
room temperature until its resistivity reduces from ~105 Ω.cm to only few ~Ω.cm. (a) Show using a plot that how the
concentration of holes and electrons in the silicon varies as a function of the concentration of the donar atoms.
Moreover, (b) show using 2nd plot that how the resistivity of the silicon varies as a function of the concentration of
the donor atoms. Additionally, (c) show using 3rd plot that how the current through the silicon film varies as a
function of the concentration of the donor atoms when applied 1V across it. Add/draw comparisons to intrinsic
silicon in each plot.
* Use log-log scale for both axes (x-axis and y-axis) for better presentation/identification/explanation.
Parameters. The silicon film has a cross sectional area of 1 m2 and length of 10 m. Assume that for the silicon the
electron and hole mobilities (remains constant at) μn=1350 cm2/V·s and μp =480cm2/V·s, respectively. Choose
parameters that best suits your assignment.
Conclusion. Discuss the conclusions of the work done. * be very concise (few lines in bullets).
Presentation.
Grading scheme:
▪ Parameters: 2 marks
▪ Pot 1: 4 marks
▪ Plot 2: 4 marks
▪ Plot 3: 4 marks
▪ Conclusions: 4 marks
▪ Presentation: 2 marks
▪ Total : 20 marks
Copying. Copying is highly discouraged and it will lead to a significant loss (90-95 %) of marks.
* Copying includes using sentences, parameters, formats from others. Discussion is appreciated, but attempt at your
own to make it look original.
1
Submission. Submit through LMS. File (pdf or word) name must include the authors name and section (A or B) (e.g.:
Ahsan Ali A.pdf)