EE-801: Semiconductor Device Physics

Assign # 2 Spring 2021

Author 1: Name: CMS No.:

Author 2: Name: CMS No.:

* Put all these details in the cover page.

Marks: 20

Statement. As a process engineer, you are given a task to dope an intrinsic silicon film with phosphorous atoms at
room temperature until its resistivity reduces from ~10 5 Ω.cm to only few ~Ω.cm.

(a) Show using a plot that how the concentration of holes and electrons in the silicon varies as a function of the
concentration of the donar atoms.

(b) Show using plot that how the resistivity of the silicon varies as a function of the concentration of the donar
atoms.

(c) Show using plot that how the drift current density of the silicon varies as a function of the concentration of the
donar atoms.

(d) Conclusion.

 Discuss the conclusions of the work done

* be very concise (few lines in bullets).

Add/draw comparisons to intrinsic silicon in each plot.

Parameters. Assume that, for the silicon, the electron and hole’ mobility remain constant at μn=1350 cm2/V·s and
μp =480cm2/V·s, respectively. Choose parameters that best suits your assignment.

Book Reference: Ch. 5.1 and Ch. 4.5

Authors Contributions. Mention each authors contributions at the end (it is mandatory to discuss this).

Author 1.

Author 2.

Implementation Tool. Matlab, Python etc.

Presentation.

 Time new roman; font size-12 justified; line spacing of 1.15.

 Plots/graphs/images should be very clear. Add x-labels, y-labels, units, legends, titles with good line
thicknesses and color selection
 Presentation is highly important and can lead to maximum marks

Grading scheme:

1
  Parameters: 2 marks
 Plot 1: 2 marks
 Plot 2: 4 marks
 Plot 3: 4
 Conclusions: 4
 Presentation: 4
 Total : 20 marks

Copying. Copying is highly discouraged and it will lead to a significant loss (90-95 %) of marks.

* Copying includes using sentences, parameters, formats from others. Discussion is appreciated, but attempt at
your own to make it look original.

Submission.
1. Submit through LMS in pdf format
2. File name must include the authors name as below

Ahsan Ali & Mohammad Afaq.pdf