Professional Documents
Culture Documents
CAsER Diod.
a LED aud
wo most popular ophcal souYces
rate
haul aud Sous bit
duitable
Short
LED
csotated ith
multinmods
bers
atul
Ty
appuceh ms.
most
at
cohevent duices and y ar
CASER'S
bik sate
stabe applicak
appicaioms
hael ond high
Suitable ( l
aociakd
oth Alngle moedt ibe
& tcsually
cemmmly
wsed pho to diodu
most
Dekector CAPD
(APD).
Avaloncht photo
Characteishes opheaSou
.Thoe
Thuse olouices
cuice
al LED and ASER D10DE
3ystem a rue.
exibit nos
characjensheshies that optia
Should posses
puoperty chavacteisic
onge. ok applications
lo
power nd lou usthe
tquiinq
hot to
Speetsawi dth Spectrad idth should be. Such
alite maximvm 8ondtsidth
No-Bi
Rs
Barmer
oey
4 + 4 4 t
Cap
Ce
NOuene
Band
is applieed 1
Cae)
when sci d Ubltage
UBltage
N-P
P-N
akes placa m
Chor Cier chae
tu
As a Sult
Sn o
Lgins toran sih on
eCombine. n lu
CUmuerteol to ophka
t a nsHom
shiom
in fh tan
enemlosh
T ene to phots
ise
Lohich gives
en u l a f m
calculated mn
misS16n
E hy h h p l a n C K s C s t a n t =
662 x 10T
A he 3 lo ms
stadialed
power
optito
+is a meas u th
Radlance arua
O n i t
ADid ngle. per onit.
Bghtness)
6aghtness)
also calltd
urface.
emithn
Cmitting
bhw applcati6
applicatisn
tls hm delay bhws
Raspnse. t u
this s
Emi ssion and h emissicn phcal
Cuent pule.
a
m ht om photoms
enar i h hich
dbusce
Bandidhh
Bandsidth
Umibs t h V a y n g ths njected
ths njested
u h u delay varpng
laked disety by
tnn
Can be
be mo dy
Curent
u ontum Ehcieny7 Inemal doantum thldeny n ths achue Lgion
is thu
tien 67 th ehsle pohs hatecombint. Hadialely
photons
CA-sER
Compan siom behoeen ED and
faxomer CASER
LED sHmulated emission
medl
Spectra d t h Snm I o Snm)
12 109 nm
20nm,
13 ransislo malur
aneates
DIsance
t4 Couplirgbcien
Hih
IS Compahble Abers multi mod sT Sinu mode ST
h Cwo basi LED Comkiquyations being ued kor Hber opties are
dive c s
the opheal s d to 100 um)
that diomter
drameters
t h s p icad
iber cCor
e Mm)side
side th
to mabeh ( so-70
emitter a
the edge
or
Cmtact Atipes
L U D ~ U O U m
usually
onge olirechono han
ngioms
t h e achve.
nore
emitter
emite CED
edge
ge cmtact)
emission patem mekalliz
ehonreletchicol
tmitina D
Frn ge
Issta
Stipe tomtatt
Surhac S/0
aetve, Crea
os
Doublehtrowj
uhehon
bean
- S c h e m n a i e
i n w h e r e n t
optieal l
metallizlon ko eleenca
1thng
an edge -em
htero)unhim ED Heatrsnk
Contach
and ghy
(ombtrhm n tha pbn pn-mehon
ole beam is ED
pn -juncion. trtort caye tmiting ypa
otirectiom Lor to a
leD
ED emite
s catled Highly elirechimal -edje
O107 Suraee emittng leD
3Gn
1 Spectra emissib
pattem (2S nm
emithng ED
Suraeemting double heho funchn ED
Clscuda
ekkud
ell -Hber
4igh Fadione. Surlare emi ting
- Bonding makenal
metalliaahian
LED. The achive kgim is limited
-suraue
a cireular Stetion hawmy an Uyht
conyheme
treHve s i
Grrca Compakble ih h iher c
end act.
meialieahon
In i e surlace enmitiag leD th Heasnk
plons t achue ligA emithng
Schematic dlagom Surkoce -emicni
Lgin ts onented lar ts H Coxi's CED U
1s
thruyh 4Ls Aubshmke t u alevie. mb ohlth s aber
hsn
un bondlud h order- to acuept th tmited tight
Ths emissim pabem is sotopia ith a 120 HPB This isotopic
ary dfireeHen
LASERDIoDE
momochonatic
tLy hawe highly mi
oliocltsaut COheren oluices
as e lght bea
have hlghly olivecfional lght beam
ofp adlatim
Thsy
er dlode t fabry pe
Thr mos+ eommomly used pe o
om th puintiple, Shmul aked
onatr". t LOvk
Cawity es
emisSiom
Resonaor
tabvy peot Cauiky
are Shosh
dimensi
d m e n OnA
ond t h vaitus
Th Conshuchmal
clthails wn n 67
Canity
6ommatim
6aby pewt
Tha u l e c t i n g
Faccts
a n s m i t e d wcewe
C o u i t y endls a r t
plants
ConruuHon
(ISM)
-Di-eleeh
ulechng ayer
horaverse size
coupled nto ber.
fo be
opHad poer
poees)ea namely
Lorin oer achon s
C) Shmuldted emissron
(6) Spomtaneots misim
a) Absopti on Ez m h u
e2
w hv
Eni nttal Stae
d i n a l stabe
GND
Sa
feps
. mvolweo threc myr
sith peper
Stp
otp-1 (A bsapHm)- hn o
phofon enera (hv)
m he
device n e
ave engh A romphnges 0n
ts h
absoybs t ener md rans/ers se
Spabc £
tlu 9HOune
whn eufumA t
Ofp-2 CSponkanesus emissien) emib
nhable excibed ate (G) , F
Sa nom ny emissim.
his ts called Spomkancous
photn eney h These emission
extrmal Stimulation
extranaf
horc. s
no
iswsCed 9m CED
n s exéted
whn e is peoent
Skp3Stimulattd emiasion -U eleuee
hv hmpinges n
end l s
phofon
hat & meiclont emirslom.
aiaelatrd
Knoon
Can be Unelexstrod
th's mistin
Smples- example HesUman Cavit.
by conaicdering abry-peo
hueture. i Ahown n above It
Ris m a n
Fab-peof urla ces ces each ofhtr,
ectingmi 0
twpartial
has a t g ets taapped
by-pen Caity
ls Lams ic
boek aud
baek C d Tu back od
aud uelects
n lt
auity cau
Lohin t
Cauity CaUses
electh eld
s
hips
t
ts LOowelengk hat aut cet susonan Lguen cles mterlere
emtr
comsactvey ctnd tir amplitucla. udd ohn tyext
U oluwiee.
Resonating oavedengfhs au cald "
longitudinad mocle
8ine uy kesmale culong s log Lu
hree
it
cauity.
value
behauiour tls pusonant 9auvelenths or
Resona mad
mirb afleehuihy nodas
mocles R
h s nomber longitudinal
length (aber
m L
n:RepncHue. lndes
SA
Relaloe wawely
g Separa Hon behoeen
lonin
lanin
Reson atng modeelasingmodu.
mocles
laling moeles
behreen dls
t s spacng ualue
Emissive uvelength at peak
SA d A-
Ln
FHOTO DEreCTORS
opeed
Reapsmavity I fas usponue
4.Hgh
Should have long operahing e
be Cos ehecHve.
Should
dioclts LOhidh
htdh oltteets
ane a30 callsd 0 phob
Photo Delccfos 9nto ebcfical nol.
Ught
converts
and Converfs I
tlhs phesenee m'Ravose
oe ual peraked mRowese
eperafed blas
phob oletee
fos
hen
han
ehale0
hole pais at tqhebaed cue to
Semicemduittnr
hv
thsempin photohs
3 3 h u i c l e n t photma
fPIN photoeliode
dioede tomaishs
PIN photo
emicnducar
a wlde. mhinoic
Semiconduc tor there is
behsten u pd n laytr
ide.,
layer mhin sle
uqnd a Ahon
9fnce he abso-bcd
absorbed n
photons
ibe
eng
thah
Tha ncomng
rcmng
hos a nprved
bmpved
high pobabib Ruyims.fhu
n-kegims
thu
Hhe
the P r
P oY n ph
pn- p ho
ohhd
diio
oddet
h tlu imple
pn
thon is
yple
Haher
H ather
elaHoe
to Phoh g eheynbed Ep
meed
and t
cmduehrm Bavd
wetng
phofm has
an
hbh enmkd N
Shin an midnt
halle Band
tha phetn Can
fve Val e e
ener hv2E. p
lehimy
Camies whsn a
bogenrally
leys
les than vnity.
QUantum effleieny
Respmsrihy
RelaHon 6hw ctemal quan tum ekleteng y)
Quonbm efdena
A-phom uuwelength
hC hc
maximum avelength
Cur- avelength (Ac)
3 e/hoe
tha pusults
photon
Epoatern
c u t c o n d i h o n aheteneuelongth
h
Avalanche Photo Dioda
eleie icld
Reach hrovyh Avakrch phob etiode RAPD
Ava lonhA
W mulhiptèahion
ghon
qain
min mfieldpneh
ugulyeddJor
OepleHon
lon
onizaHon
I(T)
ho.s he schtmehe
iut FReach thamygh APD Stuetur
Shuctae o n RPD.
cmcen paion eleehie cld i h
Virhe o tu dopping Uu
clechic eld
tnshucHon
tls n'p unuton, he
blas Ahe
bias ,
opezutn
p erten
Ond phyoira ionizahom
ndr
Undur
n
nomma
all
Knoon as
Cause mpact this
this Kts
enoush to
th compleely
deple fed
dtpleted.
RAPD
e Iip) uegion alsp
nn
k on
-n as
T-lager APD
HPD's a al
henee
tmdition,
Llach hmuh phenomena erctiom ts
spereution
brcakdown phenomena
Hvalonde
APD uses
incrtasCs
ncrtascs s Ledsponsiuit
etsporsiuty
Lohih
h
these three acfor are
ha
ts kundementall, tini ted by
s /p0mse apeed phobphotoeliods
Cate)5 to foaveleevss t h cdepleHon
rime P takes phofo generubes
m the Coomer
comier eln
dilE velocity
ransit ine t depernds
Hgion this
thi deple tion
layer
widh , and
h ghen
V
peiponse
by tae srisetHme
timu s descibed byhe
descn'bed
AuseHm
Ths
ugiom
deple.hion
defeefortfp
ia r s e Hme
end all fmu
Temperahur eeet mAvalanthu. gain
avalancht photoelode SVe
9 a h mechanism
elpendnce of ths
tomperatre SensiHve. becavse. o the temp.
pGrheulay
eand hole. nonizatim tates. This emp. dependenee.
Can
is
voltaje
blas voltage
ducacases ond hs appled So
will
hirease
and
Hemp. ill
ncrease.
omizaisn
Aaks e and holes
maliplyng
electiceld
n he a Hcceiver maorpavake
c deeoto
cleteotor
Huqulres
that
o
mm
h
h e. photo
his blas voltage
vottag
Changed
hs oppUed olepenclsnt
shich adjust a ample temp-
Clhcuit loever
ediomhip.
changes empiicel tel
tiu tm. L
hon at which pes
obtamedOm
breakclown vltaje
Can
be Vp n- 2. 7,
tapHesíon to okin itJ
H
Sinte.u buakdoon I-Vve)" V Na- Inin
vny
to
Knouon werse
bas vslta
Naz
i
UolT)[ + a (T-To)
O0ltae Nge T) photocungsent
Ima muipl'ed
i t h t e m p
ente
temp.
nT)n To) (,Hb LT-To)
wlh a po Jitive
U
Lonstants (RAPD)
photodiode
S u b st
tiuig
Ths
hrough cLuakeneks
a b v e e g h
uach
Cmpamspns o photoeletectors
and In a As PIN photbdlode
Gqenete operabng 1àromefera g S ,ye
S-10
Sias veth
Sb JUD 1 0 SD
DosK Cuen
nA
0.1-2 0:-0-8 O.-0.
Rise tima ns
S0-46 Q0-40 0 30
Blas Votha