PD - 95046A

IRF640NPbF
IRF640NSPbF
l Advanced Process Technology IRF640NLPbF
l Dynamic dv/dt Rating
HEXFET® Power MOSFET
l 175°C Operating Temperature
l Fast Switching D
l Fully Avalanche Rated VDSS = 200V
l Ease of Paralleling
l Simple Drive Requirements RDS(on) = 0.15Ω
l Lead-Free G
Description
Fifth Generation HEXFET ® Power MOSFETs from ID = 18A
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- TO-220AB D2Pak TO-262
resistance in any existing surface mount package. The IRF640NPbF IRF640NSPbF IRF640NLPbF
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for low-
profile application.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current  72
PD @TC = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy ‚ 247 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt † 8.1 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew„ 10 lbf•in (1.1N•m)
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IRF640N/S/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.25 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.15 Ω VGS = 10V, ID = 11A ƒ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.8 ––– ––– S VDS = 50V, ID = 11A ƒ
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 67 ID = 11A
Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 10 ––– VDD = 100V
tr Rise Time ––– 19 ––– ID = 11A
ns
td(off) Turn-Off Delay Time ––– 23 ––– RG = 2.5Ω
tf Fall Time ––– 5.5 ––– RD = 9.0Ω, See Fig. 10 ƒ
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G

LS Internal Source Inductance ––– 7.5 –––

and center of die contact S

Ciss Input Capacitance ––– 1160 ––– VGS = 0V

Coss Output Capacitance ––– 185 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 53 ––– pF ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 18
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 72
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ƒ
trr Reverse Recovery Time ––– 167 251 ns TJ = 25°C, IF = 11A
Qrr Reverse Recovery Charge ––– 929 1394 nC di/dt = 100A/µs ƒ
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.0
RθCS Case-to-Sink, Flat, Greased Surface „ 0.50 ––– °C/W
RθJA Junction-to-Ambient„ ––– 62
RθJA Junction-to-Ambient (PCB mount)… ––– 40

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 IRF640N/S/LPbF

100 100 VGS

VGS
TOP 15V TOP 15V
10V 10V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
10 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10

4.5V
1
4.5V

1
0.1

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175 °C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.5
ID = 18A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

3.0
TJ = 175 ° C
2.5
10
(Normalized)

2.0

TJ = 25 ° C 1.5

1
1.0

0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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 IRF640N/S/LPbF

2500 20
VGS = 0V, f = 1 MHZ ID = 11A V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED V DS= 100V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd V DS= 40V
2000 16
Coss = Cds + Cgd
C, Capacitance(pF)

1500 12
Ciss

1000 8

Coss
500 4
Crss

0 0
0 20 40 60 80
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175 ° C 100
ID , Drain Current (A)

10 10us

100us
10
TJ = 25 ° C
1ms
1
10ms
1

TC = 25 °C
TJ = 175 °C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRF640N/S/LPbF
RD
20 V DS
20
VGS
D.U.T.
16 RG
+
16 V DD
ID , Drain Current (A)

-
ID , Drain Current (A)

10V
12
12 Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

8 Fig 10a. Switching Time Test Circuit

8

VDS
4 90%
4

0
0 25 50 75 100 125 150 175
25 50 T 75
, Case100 125
Temperature (150
° C) 175 10%
TC C
, Case Temperature ( ° C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response(Z thJC )

D = 0.50

0.20
PDM
0.10
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF640N/S/LPbF

600

EAS , Single Pulse Avalanche Energy (mJ)

15V
ID
TOP 4.4A
500 7.6A
BOTTOM 11A
L DRIVER
VDS
400

RG D.U.T +
- VDD 300
IAS A
20V
tp 0.01Ω
200
Fig 12a. Unclamped Inductive Test Circuit
100
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I AS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF640N/S/LPbF

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRF640N/S/LPbF

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010

LOT CODE 1789 INT ERNAT IONAL PART NUMBER
AS S EMBLED ON WW 19, 2000 RECT IFIER
IN T HE AS S EMBLY LINE "C" LOGO
DAT E CODE
Note: "P" in as s embly line pos ition YEAR 0 = 2000
AS S EMBLY
indicates "Lead - Free" LOT CODE WEEK 19
LINE C

TO-220AB package is not recommended for Surface Mount Application

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF640N/S/LPbF

D2Pak (TO-263AB) Package Outline

Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

T HIS IS AN IRF530S WIT H PART NUMBER

LOT CODE 8024 INT ERNAT IONAL
ASS EMBLED ON WW 02, 2000 RECT IFIER F530S
IN T HE AS SEMBLY LINE "L" LOGO
DAT E CODE
YEAR 0 = 2000
ASS EMBLY
LOT CODE WEEK 02
LINE L

OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER F530S
LOGO DAT E CODE
P = DES IGNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
ASS EMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = ASSEMBLY SIT E CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF640N/S/LPbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBE R
INT ERNATIONAL
ASS EMBLED ON WW 19, 1997
RECT IF IER
IN T HE ASSEMBLY LINE "C" LOGO
DATE CODE
Note: "P" in assembly line
position indicates "Lead-Free" YEAR 7 = 1997
ASSEMBLY
LOT CODE WEE K 19
LINE C

OR
PART NUMBER
INT ERNATIONAL
RECT IF IER
LOGO
DAT E CODE
P = DESIGNAT ES LEAD-FREE
ASSEMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEE K 19
A = ASSEMBLY S ITE CODE

Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF640N/S/LPbF

D2Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3

Notes:
 Repetitive rating; pulse width limited by ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
„ This is only applied to TO-220AB package
‚ Starting TJ = 25°C, L = 4.2mH
RG = 25Ω, IAS = 11A.
… This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
† ISD ≤ 11A, di/dt ≤ 344A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
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