Microsyst Technol (2015) 21:1949–1958
DOI 10.1007/s00542-014-2318-1
TECHNICAL PAPER
Polysilicon thin film piezoresistive pressure microsensor: design,
fabrication and characterization
S. Santosh Kumar · B. D. Pant 
Received: 30 June 2014 / Accepted: 31 August 2014 / Published online: 12 September 2014
© Springer-Verlag Berlin Heidelberg 2014
Abstract  Polysilicon based pressure sensors use a sili-
con dioxide layer for isolation of piezoresistors from bulk.
This helps in reducing the leakage current compared to the
p–n junction isolation in silicon piezoresistors. They are
also more cost effective than silicon-on-insulator (SOI)
based sensors for high temperature applications. This paper
reports the design, fabrication process and characterization
of a polysilicon piezoresistive pressure sensor with wet
bulk micromachined diaphragm. Novel meander shaped
polysilicon piezoresistors are placed at optimized locations,
found using finite element method (FEM) simulations, to
experience high stress. The effect of clamping conditions
of the diaphragm on the piezoresistors placement is shown
through FEM simulations and the piezoresistor shapes are
designed to keep the metal lines outside the diaphragm
structure for better reliability. After fabrication and dicing,
the mechanical characterization of the sensor is performed
using laser doppler vibrometer (LDV) for determining the
first mode resonance frequency and transient response of
the sensor diaphragm. A first mode resonant frequency of
306.6 kHz and a response time of 0.56 ms are obtained.
The sensor is then packaged inside a customized jig and
tested with pressure load for determining the static and
temperature characteristics of the sensor in the pressure
range of 0–30 Bar. The sensor is tested at three differ-
ent temperatures, viz. −5, 25 and 55 °C. A sensitivity of
3.35–3.73 mV/Bar, non-linearity of less than 0.3 %, and a
S. S. Kumar (*) · B. D. Pant 
CSIR–Central Electronics Engineering Research Institute
(CEERI), Pilani, Rajasthan, India
e-mail: santoshkumar.ceeri@gmail.com
S. S. Kumar · B. D. Pant 
Academy of Scientific and Innovative Research (AcSIR),
New Delhi, India
hysteresis of less than 0.1 % are obtained for all the test
temperatures.
1 Introduction
MEMS-based pressure sensors are one of the most popu-
lar devices for measurement of fluid pressure. These sen-
sors also have much higher sensitivity than the metal strain
gauges which work on the basis of change in resistance due
to geometrical deformation (Barlian et al. 2009). Various
transduction mechanisms are used in these sensors to con-
vert the pressure input into an electrical signal and based
on the mechanisms the sensor are classified as capacitive,
piezoresistive, piezoelectric, optical, and resonant (Eaton
and Smith 1997; Esashi et al. 1998; Kumar and Pant 2014).
Sensors with piezoresistive transduction have several
advantages like small size, high sensitivity, low cost, and
simple fabrication, which makes them a preferred choice in
several applications (Kumar and Pant 2012).
Piezoresistive pressure sensors undergo a drift in their
output characteristics with temperature owing to vari-
ous factors like temperature coefficient of piezoresistance
(TCπ), temperature coefficient of resistance (TCR) (Tan-
askovic et al. 1995), and junction leakage at high tempera-
ture (Guo et al. 2009). Silicon-based piezoresistors formed
by diffusion/implantation are isolated from the substrate
by a p–n junction and therefore suffer from junction leak-
age at high temperature (Li et al. 2012). Polysilicon thin
film piezoresistors on the other hand are isolated from each
other and from the bulk using a thin layer of silicon diox-
ide underneath the piezoresistors. This helps in cutting off
the junction leakage component of temperature drift. How-
ever, the other components would lead to a temperature
drift which must be compensated using signal conditioning
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1950
Fig. 1  Piezoresistors on a diaphragm
circuits. There are various high temperature applications
of pressure sensors such as aircraft gas turbine combustion
control, chemical processing, automotive industry, aviation
engineering, oil fields, industrial measurements, and con-
trol systems (Guo et al. 2009). Polysilicon is a very impor-
tant material for MEMS and it has been used abundantly
both as a structural material and as an element for piezore-
sistive sensing (French 2002). Polysilicon piezoresistive
pressure sensors can work at high temperature (Liu et al.
2009) and also are more cost competitive than SOI based
sensors (Guo et al. 2009) which have also been suggested
for high temperature applications.
The paper starts with the design principles which have
been considered for designing the pressure sensor. Next, the
fabrication process of the polysilicon piezoresistive pressure
sensor is described. After dicing, the mechanical characteri-
zation of the sensor diaphragm is carried out for obtaining
the resonant frequency (1st mode) and the transient response
of the sensor. After preliminary packaging, the sensor static
and temperature characteristics are experimentally deter-
mined at three temperatures, namely, –5, 25 and 55 °C.
2 Piezoresistive pressure sensor
The phenomenon of piezoresistivity in semiconductors like
silicon and germanium was reported by Smith in (1954).
Various pressure sensors employing polysilicon based pie-
zoresistors have also been reported in literature (Malhaire
and Barbier 2003; Sivakumar et al. 2006). In a piezoresis-
tive pressure sensor, four resistors are placed on the top of
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Microsyst Technol (2015) 21:1949–1958
Fig. 2  Piezoresistors in Wheatstone bridge configuration
diaphragm as shown in Fig. 1. When a pressure is applied
on the diaphragm, stresses are generated in the diaphragm
structure. Two resistors, R2 and R3, experience stress along
the direction of current flow (longitudinal stress) and the
other two resistors, R1 and R4, experience stresses perpen-
dicular to the direction of current flow (transverse stress).
As a consequence of this stress on the resistors, the resist-
ance of the R2 and R3 increase and resistance of R1 and R4
decrease. This change in resistance is due to piezoresistive
effect, which changes the mobility of the charge carriers in
semiconductors under stress. When these piezoresistors are
connected in a Wheatstone bridge as shown in Fig. 2 than
the output of the Wheatstone bridge can be given by Eq. (1)
(Senturia 2001):
   
Vout = V + − V − =
R3
V−
R4
V
R1 + R3 R2 + R4
  (1)
R2 R3 − R1 R4
= V
(R1 + R3 )(R2 + R4 )
The up and down arrows in Fig. 2 indicate the increase
and decrease of the resistance of the resistors under stress.
In the ideal scenario, in the unstressed state, all the pie-
zoresistors have equal resistances and the output is zero.
However, in the practical scenario there may be an offset
voltage even without pressure due to mismatch in resistor
values and built-in stresses. As the pressure is increased,
the sensor output changes according to Eq. (1).
3 Design considerations and pressure sensor structure
In the present work, implanted polysilicon piezoresistors
are used as the sensing elements and the diaphragm of the
Microsyst Technol (2015) 21:1949–1958 1951

Fig. 3  Pressure sensor structure

showing polysilicon piezoresis-
tors

pressure sensor is fabricated by wet bulk micromachin-

ing. Bulk micromachining using tetramethylammonium
hydroxide (TMAH) is used for fabrication of the pressure
sensor as it provides a low cost alternative to dry etching
(Mukhiya et al. 2011). Using this technique on (100) wafers
yields diaphragm edges aligned along the <110> directions.
All the piezoresistors are aligned along the [110] direction
(parallel or perpendicular to diaphragm edges). The cavity
formed by the diaphragm is anodically bonded in vacuum
with Pyrex glass to obtain an absolute pressure sensor.
The sensitivity and non-linearity of the sensor are two
of the most important parameters to consider while design-
ing pressure sensors. High sensitivity and minimum non-
Fig. 4  Clamping conditions. a Plate clamped at the edges. b Pressure
linearity is desired in piezoresistive pressure sensors.
sensor diaphragm formed using wet bulk micromachining
Thinner diaphragms are more sensitive than thicker ones
but are more non-linear as well. Similarly, bigger dia-
phragms increase the sensitivity but reduce the linearity entire piezoresistor can be bought inside the high stress
and increase the size of the sensor. So there is always a regions. They also help in increasing the non-linearity
trade-off between sensitivity and non-linearity. Accord- due to all the resistors being in more identical high stress
ing to the theory of thin plate, for good linearity, the dia- regions (Zhang et al. 2007).
phragm deflection at full scale pressure must be less than Sometimes, the pressure sensor diaphragm is modeled
1/5th of the diaphragm thickness (Herrera-May et al. as a plate clamped at the edges especially when diaphragm
2009). As the full scale pressure for the designed pressure is analytically modeled (Maier-Schneider et al. 1995; Gong
sensors is 30 Bar, the diaphragm dimensions are chosen and Lee 2001). However, a pressure sensor diaphragm
based on the above considerations and the ease of fabri- formed by bulk micromachining using TMAH has slanted
cation. The pressure sensor structure with the diaphragm walls and is clamped from the bottom surface. The com-
dimensions are shown in Fig. 3. A square diaphragm is parison of the two situations is shown in Fig. 4. When the
used as it offers a better sensitivity than rectangular dia- diaphragm is modeled as shown in Fig. 4a, the stresses on
phragm and can be realized using bulk micromachining, the diaphragm (when a pressure is applied) cannot extend
unlike circular diaphragms. beyond the edges of the diaphragm. This is not true for the
The placement of the piezoresistors on the diaphragm is clamping shown in Fig. 4b. The design simulations for the
also crucial for the sensor characteristics. For high sensi- pressure sensor diaphragm were carried out using Coven-
tivity, piezoresistors must be placed in high stress regions. torWare® using the proper clamping conditions. The dia-
Meander shaped piezoresistors are used in the present phragm deflection and von-Mises stress distribution of the
design as it help in obtaining a better sensitivity and the diaphragm for full scale pressure are shown in Fig. 5.

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1952 Microsyst Technol (2015) 21:1949–1958

Fig. 5  Design simulations. a Diaphragm deflection. b von-Mises stress distribution

The sensitivity of a pressure sensor is proportional to the

differential stress (|σx−σy|) on the piezoresistors (Xiansong
et al. 2004). In the case of longitudinal piezoresistors σx is
dominant and σy is dominant for the transverse piezoresis-
tors. But due to symmetry the x-directed stress along x-axis
gives the estimate for the stresses for both the longitudi-
nal and transverse piezoresistors. The x-component of the
stress along the x-axis of the sensor diaphragm, from the
center of the diaphragm, is shown in Fig. 6. It is clear from
the figure that the high stress regions extend outside the
diaphragm edge. This implies that the piezoresistors can
be placed outside the diaphragm edge. This is not possible
when the diaphragm is considered as a plate, as illustrated
in Fig. 4a.
Novel shaped piezoresistors are placed on the dia-
phragm in order to maximize sensitivity and to reduce
non-linearity. The shape and dimensions of the transverse Fig. 6  X-component of stress along x-axis
and longitudinal piezoresistors are shown in Fig. 7. For
minimizing the mechanical influence of the metal lines on
the diaphragm and the influence of the diaphragm defor- the wafer using RIE to subsequently form a diaphragm
mation on the metal lines (which may lead to their break- of size of 1,280 µm after micromachining. Next, wet bulk
age and affect the metal-piezoresistor contact), the pie- micromachining is carried out using TMAH (25 wt%,
zoresistor shape are chosen to keep metal lines outside the 85 °C) to form a cavity of 295 ± 1 µm depth (to get a dia-
diaphragm edges (Malhaire and Barbier 2003; Wei et al. phragm of about 50 µm thickness). The silicon dioxide
2010). and nitride are etched followed by dry thermal oxidation
(0.1 µm). Then, LPCVD polysilicon thin film of 0.5 µm
is deposited at 620 °C and 0.16 torr. The thermal oxide
4 Pressure sensor fabrication (0.1 µm) and polysilicon at the back side (diaphragm side)
of the wafer is etched. The polysilicon on the front side
A n-type double side polished (DSP) 3 in. Si wafer with is implanted with boron ions (dose −1.5  × 1015 atoms/
(100) orientation wafer and a thickness of 345 ± 1 µm cm2, energy −80 keV) and subsequently annealed at
thickness is used as the substrate for the fabrication of 1,000 °C for 30 min in N2 ambient for dopant activation.
the pressure sensor. First, thermal oxidation (0.6 µm) and A sheet resistivity of about 410–450 Ω/Sq. is measured
LPCVD nitride deposition (0.1 µm) is carried out on the in the doped polysilicon. The polysilicon piezoresis-
wafer. Appropriate regions are opened on back side of tors shapes are than patterned using RIE. Then, PECVD

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Microsyst Technol (2015) 21:1949–1958 1953

Fig. 7  Shape and dimensions of piezoresistors. a Transverse piezoresistors. b Longitudinal piezoresistors

oxide of 0.5 µm thickness is deposited on the wafers and

vias are opened for electrical connections. Next, Cr/Au
(200 Å/2,000 Å) is deposited and patterned for metal-
lization. Finally, the wafer is anodically bonded with
Pyrex 7740 glass at 325 °C with an electric field of 400 V
(5 min) and 600 V (10 min). The bonding is carried out in
vacuum (10−6 Bar) to obtain the reference pressure in cav-
ity required for absolute pressure sensor. Care needs to be
taken in this step as the bonding quality is dependent on
the cleanliness of the bonding surfaces. The entire fabrica-
tion process is depicted in Fig. 8. The SEM micrographs
of the fabricated pressure sensors are shown in Fig. 9. The
insets show the longitudinal and transverse piezoresistors.
The resistances of all the piezoresistors are found to be
11 kΩ ± 5 %.

5 Mechanical characterization

For the mechanical characterization of the sensor struc-

ture, the sensor chip is mounted on top of a piezoelec-
tric actuator disk as shown in Fig. 10a, b. The dual beam
mode in laser doppler vibrometer (LDV) is adopted to find
the frequency response of the sensor structure in order to
cancel out the frequency response of the piezoelectric disk
(Fig. 10c). The frequency response of the sensor structure
is shown in Fig. 11. The resonance frequency (first mode)
of the structure is found to be 306.6 kHz.
Fig. 8  Fabrication process flow. a Thermal SiO2 growth (0.6 µm)
and LPCVD Si3N4 deposition (0.1 µm). b SiO2 and Si3N4 etching
using RIE. c Wet bulk micromachining of Si from backside. d SiO2
and Si3N4 etching on both sides, thermal SiO2 growth (0.1 µm) and
LPCVD Polysilicon deposition (0.5 µm), etching at the back side
using RIE, and implantation of polysilicon using boron and anneal-
ing. e Piezoresistor patterning. f PECVD SiO2 deposition (0.5 µm). g
Via opening. h Cr/Au sputtering (200 Å/2,000 Å). i Metal patterning.
j Anodic bonding with Pyrex glass

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Fig. 9  SEM micrographs. a
Fabricated pressure sensor—top
view. b Diaphragm fabricated
using wet bulk micromachin-
ing—bottom view

Fig. 10  LDV Characterization
setup. a Piezoelectric actuator
disk. b Pressure sensor chip
mounted on the actuator. c
Device under test

For obtaining the transient response of the sensor, an
input pulse with the first mode resonance frequency is
given as an excitation to the piezoelectric actuator. The
input pulse is shown in Fig. 12a and the response of the
sensor structure is shown in Fig. 12b. After the input pulse
is terminated, the time taken for the output (diaphragm
deflection) to settle to 90 % of its peak value is about
0.56 ms. This is the response time of the sensor. Thus, if
the frequency of the input measurand (pressure signal) is
greater than 1/(0.56 × 10−3)  = 1.785 kHz there will be
ringing of the output signal.
6 Static characterization
A custom made jig is fabricated and the pressure sensor
die (mounted on the header) is placed inside the jig for
obtaining the package for sensor static characterization.

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Microsyst Technol (2015) 21:1949–1958 1955
This sensor arrangement for packaging is illustrated in
Fig. 13. The pressure load is applied to the sensor by con-
necting the jig to a ¼ in. pipe which is in turn connected to
a pressure controller. The pressure input is provided using
a pressure controller (DH Budenberg). The jig along with
the sensor is placed inside a thermal chamber to provide
a controlled temperature ambient for testing. The block
diagram schematic of the characterization setup is shown
Fig. 11  Frequency response of the sensor showing the first resonance
mode
Fig. 12  Transient response of the pressure sensor diaphragm. a Input excitation signal. b Response of the pressure sensor diaphragm
in Fig. 14. A constant input bias voltage 3.3 V is pro-
vided to the sensor for testing. The differential output of
the pressure sensor was experimentally determined while
sweeping the input pressure from 1 to 30 Bar (in steps of
1 Bar). The output of the sensor is determined at interval
of 3.33 % (1 Bar) of full scale up to the full scale in order
to obtain a large number of calibration points. This helps
in better accuracy while determining the non-linearity of
the sensor.
The output characteristics of the pressure sensor is cal-
culated at three different temperatures—standard tempera-
ture (25 °C), low temperature (−5 °C) and high tempera-
ture (55 °C). The combined plot for output characteristics
of the sensor is shown in Fig. 15. It is observed from the
plot that the sensitivity of the sensors decrease with tem-
perature, which is in line with the theory of piezoresistance
(Kanda 1982).
The offset voltage of the sensor and the linear fit func-
tion of the experimentally observed output at different tem-
peratures are shown in Table 1. The high offset voltage can
be attributed to the different design patterns of longitudi-
nal and transverse piezoresistors. This leads to a high mis-
match in the resistance values of the resistors.
The typical output response curve of any piezoresistive
pressure sensor is shown in Fig. 16. The sensitivity of the
sensor can be calculated either using an end point straight
line or a linear fit line. The sensitivity of the sensor in the
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Fig. 13  Packaging of the pres-

sure sensor. a Fabricated pres-
sure sensors. b Pressure sensor
chip wire bonded on header. c
Packaged sensor inside jig with
¼ in. pressure port

Fig. 14  Block diagram of pres-

sure sensor testing setup

present work is calculated using both the methods and is determined output of the sensor. For each test point, there
summarized in Table 2. As shown in Fig. 16, the output is a specific deviation. The maximum deviation is called
of the sensor is not a straight line but has some non-lin- the non-linearity of the sensor. Non-linearity at a particular
earity. To calculate the non-linearity for the sensor under point (for the end point straight line) is defined by Eq. (2)
test, the output of the sensor at zero pressure was calculated (Bao 2005):
by extrapolation (due to unavailability of a vacuum pump
in the pressure controller). Non-linearity is defined as the Vo (Pm )
Vo (Pi ) − Pm Pi
deviation of the specified calibration curve (end point NLi = × 100 % (2)
straight line or least square fit line) from the experimentally Vo (Pm )

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Microsyst Technol (2015) 21:1949–1958 1957

Fig. 16  Illustration for the typical response of any piezoresistive

pressure sensor
Fig. 15  Output characteristics of the pressure sensor at different tem-
peratures

where Pi is pressure at calibrated points, Pm is maximum

pressure of operation, and Vo is corresponding voltage
output.
For hysteresis calculations, the output value of the sen-
sor is recorded while retracing the pressure load from 30
to 1 Bar (in steps of 5 Bar). The non-linearity and hyster-
esis of the sensors are found to be less than 0.3 and 0.1 %,
respectively, over the full scale for all the three tempera-
tures. The combined non-linearity plot for the sensors
is shown in Fig. 17. The characterization results of the
uncompensated sensor including the temperature coeffi-
cient of offset (TCO) and temperature coefficient of span
(TCS) are summarized in Table 2. The sensor shows good
performance in the desired operation range. Fig. 17  Non-linearity of the pressure sensor at different temperature

Table 1  Offset voltage and Temperature (°C) Offset voltage (mV) Linear fit function y = Output
linear fit functions at different at 1 Bar voltage (mV), x = Pressure (Bar)
temperatures
−5 −112.03 y = 3.74x − 115.95
25 −111.53 y = 3.53x − 115.29
55 −111.47 y = 3.35x − 115.03

Table 2  Summary of sensor characteristics at different temperatures

Temperature (oC) Sensitivity (using linear fit) Sensitivity (using end point Non-linearity Hysteresis
(mV/Bar) straight line) (mV/Bar) (%/full scale) (%/full scale)

−5 3.74 3.73 <0.3 <0.1

25 3.53 3.52
55 3.35 3.35
Temperature coefficient of offset at 1 Bar (TCO) 0.016 %/FSoC
Temperature coefficient of span (TCS) 0.19 %/oC

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7 Conclusions
A piezoresistive pressure sensor with novel shaped polysil-
icon piezoresistors is presented in this work. The piezore-
sistors are placed at high stress regions extending outside
the diaphragm edges and metal lines are kept outside the
diaphragm to increase sensor reliability. Both the mechani-
cal and static characterization of the sensor is performed.
The sensor characterization results show good sensitiv-
ity, linearity and hysteresis in the desired operation range
(0–30 Bar). The drift in offset and sensitivity with tem-
perature is also reported for different temperatures. The
sensor can be used for high temperature applications in
this pressure range. It is also possible to boost the sensitiv-
ity of the sensor and compensate the temperature drift by
using signal conditioning circuitry to obtain better output
characteristics.
Acknowledgments  Authors would like to acknowledge the gener-
ous support of the Director, CSIR-CEERI, Pilani. The authors would
also like to thank all the scientific and technical staff of MEMS and
Microsensors Group at CSIR-CEERI, Pilani. The financial support by
Council of Scientific and Industrial Research (CSIR) through PSC-
201: MicroSenSys project is gratefully acknowledged. The authors
would also like to thank Dr. S.C. Bose and Mr. M. Santosh from IC
design group for their help in sensor characterization. The authors
would also like to acknowledge the Centre for Nano Science and
Engineering (CeNSE) at the Indian Institute of Science (IISc), Ban-
galore for providing the LDV characterization facility for mechanical
characterization.
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