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Innovative T/R module in state-of-the-art GaN technology

Conference Paper  in  IEEE National Radar Conference - Proceedings · June 2008

DOI: 10.1109/RADAR.2008.4720975 · Source: IEEE Xplore

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 INNOVATIVE T/R MODULE IN STATE-OF-THE-ART GAN TECHNOLOGY
A. Bettidi, M. Calori, A Cetronio, M. Cicolani, C. Costrini, C. Lanzieri, S. Maccaroni, L. Marescialli,
M. Peroni
Selex Sistemi Integrati s.p.a., Via Tiburtina km 12,400, 00131 Roma
phone: +390641503468, fax: +390641503701, email: lmarescialli@selex-si.com
Keywords: MMIC, AESA Systems, Phased Array Radars,
T/R Module, GaN HEMT Technology, GaN MMIC.
ABSTRACT
Phased-array radar systems, based on active electronically
scanned antennas (AESA) populated with a high number of
Transmit/Receive (T/R) modules are on the cutting edge of
advanced radar technology and in the near future will
dominate in all application domains (terrestrial, naval, avi-
onic and space).
To be competitive over conventional radars, AESA systems
must be competitive in terms of reliability and cost besides
of performances. For this reason dominance in T/R module
technology, the key enabling technology in AESA systems, is
of paramount importance and as such many defense compa-
nies are developing independent capabilities to ensure com-
petitive edge products in this field. The major industrial
world players are just developing their competitiveness on
such a type of product.
The enabling technologies for the realization of the T/R
Module and, more specifically, those related to the micro-
wave section (Front End) are the technologies that more
than others determine the feasibility, the performances, the
reliability (due to high number of Modules, up to 10000 T/R
Module/radiating surface), the cost and therefore the com-
petitiveness of the entire system. The strategic performances
of these enabling technologies is due to the fact that they are
in full evolution and as such often are not available or sub-
ject to export restrictions.
This particularly applies for GaN (Gallium Nitride) based
technologies where restriction are not just limited to compo-
nents, but are actually extended to the base materials. GaN
HEMT MMICs (Monolithic Microwave Integrated Circuits)
are strategic enabling components for both high perform-
ance and/or wideband T/R modules and for very high power
solid state transmitter applications. In particular the impact
of GaN technology will be evidenced at System level since it
will enable reduced System size and costs, maximization of
operational bandwidth, enhancement of detection, guidance
and tracking abilities. Benefits will be significant for several
military applications such as: radar, electronic warfare,
high speed communications, multirole and multidomain
functions, etc.
1. INTRODUCTION
Based on self-sufficient technological capabilities within
Selex Sistemi Integrati, for developing Phased Array radar
components (i.e. GaAs/GaN Foundry, MMICs and T/R
modules Design, Microelectronics Integration and Test), L C
and X band T/R module families of components have been
developed for new generation AESA products.
In this paper the design and realization of an innovative X-
Band T/R Module Front End based on GaN HEMT technol-
ogy and utilizing the experience of GaAs T/R Modules,
shall be presented. In particular present paper will focus on
T/R Module architecture and performances as well as on
major advantages given by GaN technology application.
The presented T/R Module Front End shall include the main
microwave functions, that is: power amplification of the
Transmitted signal (GaN HEMT HPA), Low noise amplifi-
cation of the Received signal (GaN HEMT LNA) and the
output Switch to the radiating element for enabling Trans-
mit or Receiving Mode (T/R Switch).
2. GAN-BASED T/R MODULE FRONT END
ARCHITECTURE
The general block diagram of a T/R Module is shown in
Fig.1
LNA/Limiter
E/D Mode RADIATING
RECEIVER MF Control Chip
DUPLEXER
ELEMENT
DA HPA
TRM BIAS AND CONTROL
Figure 1 - General block diagram of a T/R Module
The major functions of a T/R modules are: (i) generation of
transmit power, (ii) low-noise amplification of received sig-
nals from the radiating element, (iii) phase-shift in transmit
and receive modes for beam steering, and (iv) variable gain
setting for aperture weighing during reception.
As visible from Figure 1, the general architecture of the
Module also includes the Limiter function in order to protect
components such as Low Noise Amplifier from high power
signals, either accidental or intentional, and the Duplexer
function to allow the use of the same antenna to Transmit
and to Receive.
From recent development in the field of Microwave Inte-
grated Circuits based on substrates like Gallium Nitride
(GaN) on Silicon Carbide (SiC), comes the possibility to
apply this technology to design and manufacture MMIC
component for RF applications not only to achieve higher
performances in comparison to standard technology (i.e.
GaAs) for HPA MMICs in terms of Output Power and Effi-
ciency, but also to make the most of their robustness and
fairly good characteristics in terms of Noise Figure, in Low
Noise Amplifiers and RF T/R Switches applications.
In other words, with the introduction of robust GaN LNAs
it could be possible to eliminate the Limiter; its insertion
losses should not be present anymore allowing to increase
the power transmitted to the LNA and a reduction of the
noise figure in the incoming signal with possible remarkable
advantages on the system performances. Furthermore, with
GaN T/R RF Switch, by replacing the Circulator with a
semiconductor device, the Duplexer function should be real-
ized with reduced size and, in a medium time scale, at lower
cost.
• Obtain greater power performances with respect to
GaAs-based components;
• Realize greater level of integration. This approach is
relevant to evolve towards a T/R Module organized
in two main chips: the first based on GaN technology
including Front-End functionalities, and the second
based on Silicon or Silicon Germanium (SiGe) tech-
nology for the Back-End functionalities ( phase and
amplitude control, up and down conversion, A/D and
D/A conversion, direct digital conversion from and to
the Signal Processor)
• Much easier realization of wide band Systems (ad-
vanced multi-domain/multirole Systems)
3. GALLIUM NITRIDE TECHNOLOGY
To be added ….
4. GALLIUM NITRIDE MMIC DESCRIPTION
The following Monolithic Microwave integrated Circuits
(MMICs) have been designed in Coplanar Wave configura-
tion in the band 9÷10 GHz.

4.1 GaN HPA MMIC

HPA

AM
The power amplification of the transmitted signal is per-
SW RF formed by a two stage amplifier with a total gate periphery
of 6 mm (2mm gate width for the first stage and 4mm of
gate width for the output stage) fabricated using a Field
PM
Plate 0.25 µm gate-length process.
LNA
In the following figures the photograph of the HPA chip and
a particular of the output stage is shown.

Core Chip ( GaAs ) Front End ( GaN )

Figure 2 - General block diagram of the T/R Module based on GaN

technology: in blue the Front End in GaN, in green the GaAs Core
Chip for the modulation of RF signal phase and amplitude.
In Figure 2 is reported the block diagram of the GaN based
T/R Module.
The primary advantage is the highest power density that
GaN devices can provide. This will imply that a GaN-based
HPA chip shall have a footoprint that is one quarter with
respect to a GaAs-based HPA chip under the same condition
of generated power, which results in the production of a
greater number of components per single productive cycle.
From the module architecture point of view, the main conse-
quences are: the possibility to reduce the number of MMIC
chips, the reduction of the number of interconnections, the
reduction of the dimensions (size) of the Module itself, the Figure 3 – Photograph of the GaN HPA MMIC: chip size 5.85 mm
simplification of the routing of the Module. x 4.4.mm
The cost reduction of the single T/R Module can be esti-
mated in about 40% with respect to the equivalent module
based on GaAs technology.
The application of GaN technology in future T/R Modules
shall allow to:
 4.2 GaN LNA MMIC
The Low Noise Amplification of the received signal is per-
formed by a three stage amplifier with a total gate periphery
of 1.2 mm fabricated using a Field Plate 0.25 µm gate-
length process.
In the following figure the Photograph of the realized LNA
Chip is shown.

Figure 4 – Photograph of a detail of the GaN HPA output stage.

In the following figures the main performances in terms of Figure 7 – Photograph of GaN LNA MMIC: chip size 4.8 mm x
Output Power, Gain and Power Added Efficiency as meas- 2.4 mm
ured on wafer, have been shown. In the following figures the main performances as measured
on wafer, have been shown. The max NF in the band width
Pout_vs_Frequency results in 2.6 dB with an associated Gain of 14 dB with an
25 44 output P1dB of 26dBm.
23 42

21 40 Graph To be added
19 38

17 36 4.3 GaN RF T/R Switch

Pout (dBm)
Gass (dB)

15 34
The Duplexer function is to be performed by using a T/R
13 32
switch realized in GaN technology. The configuration is a
11 30
non reflective SPDT using shunt FETs to enable high power
9 28
handling capabilities.
7 26
In the following figure the photograph of the T/R Switch
5
9 9.5 10 10.5 11
24
chip is shown.
Frequency [GHz]

Figure 5 – GaN HPA MMIC behavior in the frequency band.

The Output Power is about 40 dBm with an associated Gain
of 12 dB @2dB Compression point.

Power Sweep @ 10 GHz

23 43

21 41
19 39

17 37
Pout (dB m)
Gass (dB )

15 35
13 33

11 31
Figure 8 – Photograph of the GaN T/R Switch: chip size 4.2 mm x
9 29 3.2 mm
7 27
5 25
From on wafer measurements the obtained performances are
3 23
in good agreement with the design simulations, as shown in
10 12 14 16 18 20 22 24 26 28 30 32 the following figures.
Pin (dBm)

Figure 6 – Pout vs Pin Compression Curve @10 GHz

 X-Band SPDT switch Insertion Loss and Isolation
0 0
-1 -8
-2 -16

-3 -24
-4 -32
-5 -40
-6 -48
-7 -56
Isolation Measured (R) Insertion Loss Simulated (L)
-8 -64

-9 Isolation Simulated (R) Insertion Loss Measured (L) -72

-10 -80
5 6 7 8 9 10 11 12 13 14 15
Frequency (GHz) Figure 11 – Sketch of the complete T/R Module

Figure 9 – Measurements (dotted lines) versus Simulated Perform-

ances: in the design band I.L.< 2dB and Isolation > 40 dB

X-band SPDT switch -Port Matching

0 S22 Measured S11 Simulated

-5 S22 Simulated S11 Mesuared

S33 Simulated S33 Measured

-10

-15

-20
Figure 12 – Top view of the GaN-based T/R Module: size 46.6mm
-25 x 15.6 mm
-30 It must be underlined that, in order to achieve the desired
-35 Output Power level, a GaAs driver amplifier has been in-
5 6 7 8 9 10 11 12 13 14 15 cluded in the Transmitting path. The phase and amplitude
Frequency(GHz)
modulation is performed by a multifunction GaAs Core Chip
working in X Band.
Figure 10 – Measurements (dotted lines) versus Simulated Perform-
The measured performances are shown in the following fig-
ances: Port matching > 10 dB
ures.
The power handling (P1dB at input port) of the T/R switch is To be added
better than 37 dBm @10 GHz.

5. GAN-BASED T/R MODULE DESIGN 6. CONCLUSIONS

As regards packaging solution for T/R Modules, generally In present paper the design and realization of a GaN-based
there are different technologies available, with different lev- X band T/R module has been presented, showing very
els of integration. For present application the chosen packag- promising performances, both at GaN MMICs and at mod-
ing technology solution is the LTCC. This technology allows ule level. The main aspects in terms of cost reduction, future
an Integrated Single Package (ISP) approach based on a Mul- improvements of T/R Module products and relevant impacts
tilayer Ceramic substrate: by simply brazing a proper metal on System main performances have been shown.
frame and a cover lid it can afford the required hermeticity.
Starting from the block diagram shown in Figure 2, the de- 7. AKNOWLEDGEMENTS
sign of the complete T/R module has been performed using
We would like to acknowledge the Italian MoD for financing
the said approach: the assembly and packaging of the RF
the R&D activities reported in the frame of KORRIGAN
MMICs and related bias and control circuitry requires a cer-
project.
tain number of interconnections and as such for this section
multi-layer substrates such as LTCC/HTCC are attractive to
minimize both module footprint and coupling between mi-
crowave and control signals.
The following figures show the final results.

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