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Homework 2 (Part 1)
The equations are plotted below. The wavelength of ArF, KrF, g-line and i-
line are 193nm, 248nm, 436nm and 365nm respectively, which are sketched in
the plot. The intersection points of those lines are the considered proper
exposure wavelength that could be used in lithography.
1.4
1.2
g-line
0.8
Resulotion (μm)
i-line
0.6
KrF
ArF
0.4
0.2
According to the solution, ArF source is adequate for 0.13 μm and 0.1 μm
technology generations.
KT
B 3.86 ×102 0.78
15.86 µ m / h
2
= exp −=
A 0.052 KT
If the initial oxide grown at 1200°C , it would taken longer to grow:
xi2 + Axi 0.32 + 0.052 × 0.3
=τ = = 0.127h
B 0.829
The time required to grow 0.8μm at 1200°C is
xi2 + Axi 0.82 + 0.052 × 0.8
=τ = = 0.822h
B 0.829
Thus, the time required to add 0.5μm to an existing 0.3μm film is 0.822-
0.127=0.695hr.
6.23 At 900°C in H2O, the oxidation rate constants are given by:
0.78
3.86 ×102 exp −
B= −5 =0.17 µ m 2 / h
8.62 × 10 × 1173
B 1.63 ×108 2.05
= exp − −5 =0.152 µ m 2 / h
A 1.68 8.62 ×10 ×1173
The total use of time is:
1 + 0.17 / 0.152
=τ = 12.46h
0.17
So, the thickness is:
0.17 13.64
=t 1 + = − 1 1.064 µ m
2 × 0.152 1.112 / (4 × 0.17)