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    This document provides two tutorial problems related to common-source amplifiers and MOSFET characteristics. The first problem asks the reader to calculate the voltage gain, input resistance, and output resistance of a common-source amplifier using given specifications for an NMOS transistor. The second problem asks the reader to determine the transconductance (gm) and drain resistance (rd) for a MOSFET operating at a specific quiescent point defined by gate-source and drain-source voltages.

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    This document provides two tutorial problems related to common-source amplifiers and MOSFET characteristics. The first problem asks the reader to calculate the voltage gain, input resistance, and output resistance of a common-source amplifier using given specifications for an NMOS transistor. The second problem asks the reader to determine the transconductance (gm) and drain resistance (rd) for a MOSFET operating at a specific quiescent point defined by gate-source and drain-source voltages.

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    © All Rights Reserved
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    11 views1 page

    Tutorial 8

    Uploaded by

    DN Cover
    This document provides two tutorial problems related to common-source amplifiers and MOSFET characteristics. The first problem asks the reader to calculate the voltage gain, input resistance, and output resistance of a common-source amplifier using given specifications for an NMOS transistor. The second problem asks the reader to determine the transconductance (gm) and drain resistance (rd) for a MOSFET operating at a specific quiescent point defined by gate-source and drain-source voltages.

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    © All Rights Reserved
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    ECE3413 : Tutorial 8

    Thursday 16 April 2020


     
     

     
    1) Consider  the  common‐source  amplifier  shown  in  the  following  figure.  The 
    NMOS transistor has KP = 50µA/V², Vt0 = 2V, L = 10µm, W = 400µm. Find the 
    voltage  gain,  input  resistance,  and  output  resistance  of  the  amplifier. 
    Consider  that  the  drain  characteristics  are  horizontal  in  the  saturation 
    region. 
     

     
     
     
    2) Determine the values of gm and rd for the MOSFET having the characteristics 
    shown in the following figure at a Q point defined by VGSQ = 3.5V and VDSQ = 
    10V. 

    1
     

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