Electronic Devices

Course No. : EEE F214 / ECE F214 / EEE C381

Topic8: MOSCAP & MOSFET

Course Instructor : Sayan Kanungo

Department of EEE
BITS-Pilani, Hyderabad Campus
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 1
Review of Previous Concepts
Assumptions:
p-semiconductor
 Thermal Equilibrium

 Boltzmann Approximation of FD
Statistics

 Uniform Electrostatic Potential

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 2

Review of Previous Concepts

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 3

 MOS Capacitor
Metal Al

Insulator SiO2

p-semiconductor p-Si

MOSFET MOS-Cap’

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 4

 MOS Capacitor
Flat Band Approximation Qox = 0 & φs = φm

Metal Insulator p-semiconductor

E

E0 E0 E0
qφm qꭕ
EC qꭕ qφs

EC
EFM EG EG EFS
EV
EV
x ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 5
 MOS Capacitor
Flat Band Approximation Qox = 0 & φs = φm

Metal Insulator p-semiconductor

E0 @ Equilibrium

E
ECi

EC
EFM EFS
EV
EVi
x
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 6
 MOS Capacitor
Application of Gate Bias: VGB>0
+ VGB
Ψ(x) Metal is Equipotential- electrons redistributed
QG Metal ξ=0 themselves to cancel the electric field
++ + + + + + + ++
Gauss’s law: Constant Electric
Insulator
ψox 𝒅ξ ρ No charge inside
Field (ξ = −
𝒅ψ
)
= insulator; ρ = 𝟎 𝒅𝒙
𝒅𝒙 ε 𝒅ψ
-
e-
-
-
- e - ψs 𝒅𝒙
→ 𝐥𝐢𝐧𝐞𝐚𝐫
-QS Gauss’s law:
- - - - Depletion Approximation- near the surface of the
𝒅ξ −𝐪𝐍𝐀 𝒅𝟐ψ 𝐪𝐍𝐀
= = semiconductor electron/hole density is negligible
𝒅𝒙 ε 𝒅𝒙𝟐 ε compared to immobile acceptor ion density

p-semiconductor
VGB = ψs + ψox Potential Balance Equation

QG = -QS Charge Balance Equation

- x ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 7

 MOS Capacitor
Application of Gate Bias: VGB>0

+ Metal Insulator p-semiconductor -

E0
E ECi
qψox
EC
EFS
qVGB EV
EFM qψs

EVi
x ξ
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 8
 MOS Capacitor
Non-ideal Situation: Qox = 0 & φs > φm

Metal Insulator p-semiconductor

E

E0 E0 E0
qφm qꭕ
EC qꭕ qφs

EC
EFM
EG EG EFS
EV
EV
x ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 9
 MOS Capacitor
@ Equilibrium
h+
Metal Insulator p-semiconductor

QG Metal
+ + + + + + + +

Insulator
E0
E ECi
- - - - qψox
-QS EC
- - - -

+ +
EFS
EFM
p-semiconductor EV
qψs
- -

EVi
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 x 10
 MOS Capacitor
@ Flat Band Potential
h+
Metal Insulator p-semiconductor

Metal
E0
Insulator
E
ECi
VFB = -(φs – φm)
VFB
EC
p-semiconductor
EFM qVFB EFS
h+ EV
EVi

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 x 11

 MOS Capacitor
Non-ideal Situation: Qox > 0 & φs = φm
@ Equilibrium
e- Metal Insulator p-semiconductor

-QG Metal
- - - -
Insulator
E0
Qox + + + + + + + E
-QS - - - - ECi qψox
EC

+ + + + +
-
-
- EFS
EFM
p-semiconductor EV
qψs
- -
EVi
h+ ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 x 12
 MOS Capacitor
@ Flat Band Potential

e- Metal Insulator p-semiconductor

-QG Metal
- - - - - - - E0
Insulator ECi qψox
Qox + + + + + + + E
- VFB = - Qox/Cox

+ + + + +
-
VFB -
-
-
EC
p-semiconductor
EFM qVFB EFS
EVi EV

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 x 13

 MOS Capacitor
Flat Band Voltage

VFB = (φm – φs) - Qox/Cox Considering the effects of both metal/semiconductor work
function difference and oxide charges

Metal Metal Capacitance of equivalent

parallel plate capacitor

Insulator ꜫox Insulator tox Cox = A (ꜫox/tox)

Metal

p-semiconductor

ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 14

 MOS Capacitor
Application of positive Gate Bias: Depletion

+ Metal Insulator p-semiconductor -

Metal
+ + + + + + + +

Insulator
E E0
ξ
- - - -
qψox
ECi EC
- - - -
VGB
EFS
qVGB

+ +
p-semiconductor EV
EFM qψs
- -

x
EVi xd
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 15
 MOS Capacitor
Application of positive Gate Bias: Inversion

+ Metal Insulator p-semiconductor -

Metal
+ + + + + + + ++ + + + + + + +
E
Insulator E0
e- e- e- e- e- e- e - e- e- e- e- e-
ξ
- - - - qψox
ECi e-- EC
- - - - e
VGB
EFS

++ ++
p-semiconductor qVGB
EV
EFM qψs
- -
x
EVi xd
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 16
 MOS Capacitor
Application of negative Gate Bias: Accumulation

- Metal Insulator p-semiconductor +

Metal
- - - - - - - - - E
Insulator
E0
ECi ξ
h + h + h + h+ h + h + h + h + h +
qψox
qψs
VGB EFM EC
qVGB --
p-semiconductor EFS
h+
h+
EV
EVi
x
xd
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 17
 MOS Capacitor
Depletion Regime Gauss’s law:
𝛒 𝐝𝛏 −𝐪𝐍𝐀
𝛁. 𝛏 = =
𝛆 𝐝𝐱 𝛆𝐬𝐢
E E0
ξ ξ(x)
qψox ξox 𝛆𝐬𝐢 ξsi = 𝛆𝐨𝐱 ξox 𝛆𝐬𝐢 > 𝛆𝐨𝐱
ECi EC
ξs
Ei +𝐪𝐍𝐀𝐱𝐝
EFS 𝛏𝐬 =
qVGB 𝛆𝐬𝐢
+ +

EV
EFM qψs
- - x
xd
x 𝟏 𝟐ψ𝐬𝛆𝐬𝐢
EVi 𝒙𝐝 = 𝟏/𝟐
xd ψ𝐬 = 𝐱𝐝𝝃𝒔
𝟐 𝐪𝐍𝐀

n0 = Ncexp{(EF-Ec(x)/KT} << NA Areal Charge 𝑸𝐬 = −𝒒𝐍𝐀𝐱𝐝 = −(𝟐𝒒𝐍𝐀𝛆𝐬𝐢 ψ𝐬)𝟏

/𝟐
𝛒 = -qNA
Density: /
p0 = Nvexp{(Ev(x)-EF)/KT} << NA ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 𝑸𝐬𝛼 ψ𝐬𝟏 𝟐 18
 MOS Capacitor
Inversion Regime For surface electron density = bulk hole density
nB0exp{qψs/KT} = NA
E
E0 ψs = (KT/q).ln(NA/nB0)
ξ
qψox nS0 nB0
ECi e-- EC Also nB0 = ni2/NA
e
Ei 𝟐𝑲𝑻 𝐍𝐀
qφF 𝝍𝐬 = 𝒍𝒏 & 𝝍𝐬 = 𝟐𝛗𝐅
𝐪 𝐧𝐢
++ ++

qVGB -qφF EFS

EV
EFM qψs nS0 = nB0exp{qψs/KT}
- -
x
𝑸𝐬 𝛼 𝒆𝒙𝒑{qψs/KT}
EVi xd
Since it is hard to bend the band further
beyond 𝝍𝐬 = 𝟐𝛗𝐅
nS0 (x=0) = Ncexp{(EF-Ec(0)/KT} nB0 = Ncexp{(EF-Ec)/KT}
𝟒𝛗𝐅𝛆𝐬𝐢 𝟏/𝟐
nS0 = Ncexp{(EF-Ec+qψs)/KT} = nB0exp{qψ 𝒙𝐝_𝐦𝐚𝐱 =
s/KT}
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 𝐪𝐍𝐀 19
 MOS Capacitor
Charge density vs Surface potential (Depletion and Inversion)
VGB
Ψ(x) Q(x)
Log(Qs)

ψox Qs
~ 𝒆𝒙𝒑{qψs/KT}
ψs QI Inversion

QD
/𝟐
~ ψ𝐬𝟏
Depletion

ψs
x x
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 20
 MOS Capacitor
Charge density vs Surface potential (Accumulation)
VGB
Ψ(x) Q(x)
Log(Qs)

ψox ψs Qs
QA
~ 𝒆𝒙𝒑{−qψs/KT}
Accumulation

ψs
x x
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 21
 MOS Capacitor
Capacitive Components Accumulation QS = QA
VGB = VFB + ψox + ψs ΔVGB = Δ ψox + Δ ψs Depletion -QS = -QD
QG = -(Q0 + QS) Δ QG = -Δ QS Inversion -QS = -QD - QI
Small Signal Gate Capacitance
Log(Qs) 𝒅𝑸𝑮 𝟏 𝐝𝐕𝐆𝐁
𝑪𝐆𝐁 = =
𝐝𝐕𝐆𝐁 𝐂𝐆𝐁 𝒅𝑸𝑮

~ 𝒆𝒙𝒑{qψs/KT} 𝟏 𝐝ψ𝐨𝐱 𝐝ψ𝐬

QI = +
QA Inversion 𝐂𝐆𝐁 𝒅𝑸𝑮 𝒅(−𝑸𝒔)

𝟏 𝟏 𝟏 𝒅𝑸𝑮
~ 𝒆𝒙𝒑{−qψs/KT} = +
𝐂𝐆𝐁 𝐝𝑸𝑮 𝐝(−𝑸𝑫 − 𝑸𝑰) 𝑪𝐨𝐱 =
Accumulation 𝐝ψ𝐨𝐱
~ ψ𝐬𝟏
/𝟐 𝒅ψ𝐨𝐱 𝒅ψ𝐬
Depletion 𝒅(−𝑸𝑫)
𝑪𝐃 =
𝟏 𝟏 𝟏 𝐝ψ𝐬
QD ψs = +
𝐂𝐆𝐁 𝑪𝒐𝒙 𝑪𝑰 + 𝑪𝑫 𝒅(−𝑸𝑰)
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 𝑪𝐈 =
𝐝ψ𝐬 22
 MOS Capacitor
Capacitance vs Gate bias Cox 𝟏 𝟏 𝟏
ψox VGB ψox Cox = +
𝐂𝐆𝐁 𝑪𝒐𝒙 𝑪𝑰 + 𝑪𝑫
𝟏 𝟏 𝟏
= +
𝐂𝐆𝐁 𝑪𝒐𝒙 𝑪𝑨 CA CD CI
ψs ψs ψs

Log(Qs) CGB
Cox
~ 𝒆𝒙𝒑{qψs/KT}
QI CI
QA Inversion CA
Inversion
Accumulation
~ 𝒆𝒙𝒑{−qψs/KT}
Accumulation
/𝟐
~ ψ𝐬𝟏 Depletion
Depletion
CD
QD
ψs VGB
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 23
 MOS Capacitor
C-V Characteristics
Cox 𝟏 𝟏 𝟏 ꜫ𝒐𝒙 ꜫ𝑺𝒊
ψox VGB = + 𝑪𝐨𝐱 = & 𝑪𝐬 =
𝒙𝐝
+ 𝐂𝐆𝐁 𝑪𝒐𝒙 𝑪𝑺 𝒕𝐨𝐱
CS
QG Metal
ψs 𝑪𝒐𝒙𝑪𝑺
𝐂𝐆𝐁 =
𝑪𝒐𝒙
=
ꜫ𝒐𝒙
𝐂𝐆𝐁 =
+ + + + + + + + 𝑪𝒐𝒙 + 𝑪𝑺 𝟏 + 𝑪𝒐𝒙/𝑪𝑺 𝒕 + 𝒙 (ꜫ𝒐𝒙)
𝒐𝒙 𝒅 ꜫ
𝑺
Insulator tox CGB
e- - e- - e- - e- - e- ꜫ𝒐𝒙
Cox 𝐂𝐆𝐁_𝐦𝐢𝐧 = ꜫ
-QS xd 𝒕𝒐𝒙 + 𝒙𝒅_𝒎𝒂𝒙( 𝒐𝒙)
- - - - ꜫ𝑺
CA CI
p-semiconductor Inversion 𝟒𝛗𝐅𝛆𝐬𝐢
𝒙𝐝_𝐦𝐚𝐱 = 𝟏/𝟐
Accumulation
𝐪𝐍𝐀

Depletion
- CD
𝐂𝐆𝐁_𝐦𝐢𝐧
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021
VGB 24
 MOS Capacitor
C-V : Frequency Response How fast the semiconductor
Frequency Response charges can respond to the
𝟏 𝟏 𝟏 of MOSCAP
= + changes in gate potential
𝐂𝐆𝐁 𝑪𝒐𝒙 𝑪𝑰 + 𝑪𝑫

CGB
QG Metal
+ + + + + + + + ΔVGB Cox
ΔQG Inversion Low-frequency
Insulator CA CI
Thermal EHP
e- - - - Accumulation
- e - e - e - e
-
generation rate
-QS < small signal
- - - - VGB
ΔQS Depletion frequency
p-semiconductor CD High-frequency
VGB
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 25
 MOS Capacitor
Threshold Voltage: surface electron density = bulk hole density
Gate voltage needed to
bend the band by 2qφF VGB = VFB + ψox + ψs

E
E0
ξ
qψox nS0 nB0
ECi e-- EC
e
Ei −𝑸𝐬
qφF VT = VFB + + 2φF
𝑪𝒐𝒙
++ ++

qVGB -qφF EFS

EV
EFM qψs
- - −𝒒𝒏𝐢𝟐 2qφF
x Qs = -qNAxd_max + 𝒆𝒙𝒑
𝑵𝑨 𝑲𝑻
EVi xd_max
ELECTRONIC DEVICES- Dr. Sayan Kanungo'2021 26