Universe

Semiconductor Physics
The beauty of semiconductors does not lie just in their
conductivity being intermediate to conductors and insulators
but
1.They have two types of charge carriers
2.They have net negative temperature coefficient of resistance
3.Unlike in conductors selective impurity addition (doping)
enhances the conducting property of the semiconductors
4.Unidirectional flow of current is made possible through a
particular way of adding semiconductors to DIODEs.
5.They are transformed into Transistors which along with the
diodes make up the backbone of electronic Industry.
  Band Gap Energy at
Material Direct / Indirect Bandgap
300 K (eV)

C (diamond) Indirect  5.47 

Elements Ge  Indirect  0.66 
Si  Indirect  1.12 
Sn (grey) Direct 0.08
Groups III-V GaAs Direct  1.42 
compounds InAs  Direct  0.36 
InSb  Direct  0.17 
GaP  Indirect  2.26 
GaN  Direct  3.36 
InN Direct 0.70
α-SiC Indirect
Groups IV-IV 2.99
compounds
Groups II-VI ZnO  Direct  3.35 
compounds CdSe  Direct  1.70 
ZnS Direct 3.68
 Electrons
participating
in covalent
bond
At T=0 All electrons are in covalent bonds and we do not At T>0 some covalent bonds break and Electron-Hole
have free electrons /holes for conduc. So perfect Insulators pairs form
n(E) = Z(E) f(E) ;
The rage of conduction Band is assumed to be from Ec to infinity; and
the range of valence band is considered from negative infinity to Ev;
So
n(E) = Z(E) f(E) ;
The rage of conduction Band is assumed
to be from Ec to infinity; and
the range of valence band is considered
from negative infinity to Ev;
so
p=
There fore p = Np e (Ev-Ef)/kT

Expression for Fermi level in an Intrinsic semiconductor

In an intrinsic semi coductor the number of electrons in
…..band is equal to ……… holes in the …….

This implies n=p

Substituting the expressions for n and p
Ef =………………
ni Intrinsic carrier concentration of a semiconductor is different from
intrinsic semiconductor concentration ( n or p)

Intrinsic carrier concentration of a semiconductor is carrier

concentration of a semiconductor equivalent to that of intrinsic or
pure SC;

intrinsic semiconductor concentration is the carrier concentration of a

semi conductor which is pure or intrinsic.

And ni =√(n*p) =
Taking n = nc and p = nh
P type
semi-
conductor
N type
semi-
conductor
Finding the concentration of Holes in the valance band of a P-Type
semiconductor

Number of holes in the valance band = the number of electrons in the acceptor energy
level….. So…
Substituting the above in the expression for number of
holes in the conduction band i.e.
 N-type P-type
Substitute the expression for fermi energy in Substitute the expression for fermi energy in
the below expressions for getting the below expressions for getting
concentration of electrons in the Conduction concentration of electrons in the Conduction

concentration holes in the valance band concentration holes in the valance band
Mobility is defined as the drift velocity acquired per unit applied
electric filed intensity; or the rtio of drift velocity to applied electric
field intensity.
μ = Vd/E and
Drift Current Density J = n e Vd
‘n’ is concentration of charge carriers; ‘e’ charge of the charge carrier;
‘Vd’ the drift velocity of the charge carrier… is
opposite to the applied field for electrons and
in the direction of applied field for Holes
Direct Band Gap Semiconductor
LECB and HEVB have same k-momentum
vector value
External force is not required to change the
momentum upon jumping from VB to CB
Eg energy alone is sufficient for transition from
VB to CB
Collisions with lattice is not required
Rate of transitions and probability of transition
are high
Photo electronic devices; LED,LASER,
Photodiode etc
Indirect Band Gap semi conductor
LECB and HEVB have different k-momentum
vector value
External force is required to change the
momentum upon jumping from VB to CB
Eg energy alone is not sufficient sufficient for
transition from VB to CB requires a force too
Collisions with lattice is required for momentum
change
Rate of transition and probability of transition
are small
Solar cells like devices
Hall effect
Junction Diode formation
 Junction Diode Energy level diagrams
p n
Ec
Ec
Efn

Ea Ed
Efp
Ev Ev

Diffusion
Ec
Ec

Ev Ev

Ec Vb Barrier
potential
Ec

Ef that is same on both sides

Ev
Vb Barrier Ev
potential
 Junction Diode Biasing ----Energy level diagrams
Vb Barrier
Ec potential
Ec
Ef that is same on both sides
Ev
V =Vb Ev
Barrier
potential
Forward Biasing
Vb-Va Barrier
Ec potential
Ec
Ef differ both sides
Ev
Va < Vb V= Vb -Va Ev

Barrier potential

Vb -Va is negative Ec
p n Ec

Ef differ both sides

Ev
Ev
Va > Vb Vb -Va is negative
 Un Biased
p n
Vb Barrier
Ec potential
Ec
Ef that is same on both sides
Ev
Vb Ev
Barrier potential

Diffusion
Reverse Biasing

Ec V=Vb +Va
Barrier
potential
Ec
Ev
V=Vb
+Va Barrier
potential Ev
Materials Used in Solar Cell
The materials which are used for this purpose
must have band gap close to 1.5ev. Commonly
used materials are-
Silicon.
GaAs.
CdTe.
CuInSe2
Criteria for Materials to be Used in Solar Cell
Must have band gap from 1ev to 1.8ev.
It must have high optical absorption.
It must have high electrical conductivity.
The raw material must be available in abundance
and the cost of the material must be low.