SMD Type MOSFET

P-Channel MOSFET
AO6401-HF (KO6401-HF)

( SOT-23-6 ) Unit: mm
+0.1
0.4 -0.1

■ Features

0.4
6 5 4
● VDS (V) =-30V
● ID =-5 A (VGS =-10V)

+0.2
2.8 -0.1
+0.2
1.6 -0.1
● RDS(ON) ＜ 47mΩ (VGS =-10V)

0.55
● RDS(ON) ＜ 64mΩ (VGS =-4.5V) 1 2 3

● RDS(ON) ＜ 85mΩ (VGS =-2.5V) +0.01

-0.01
0.15 -0.02
+0.02

● Pb−Free Package May be Available. The G−Suffix Denotes a +0.2

-0.1

Pb−Free Lead Finish

+0.1
1.1 -0.1
D

1 Drain 4 Source

+0.1
0.68 -0.1
0-0.1
2 Drain 5 Drain
3 Gate 6 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±12
TA=25°C -5
Continuous Drain Current ID
TA=70°C -4 A
Pulsed Drain Current IDM -28
TA=25°C 2
Power Dissipation PD W
TA=70°C 1.3
t ≤ 10s 62.5
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 110 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 50
Junction Temperature TJ 150
℃
Junction Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

P-Channel MOSFET
AO6401-HF (KO6401-HF)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-30V, VGS=0V, TJ=55℃ -5
Gate-Body leakage current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250μA -0.5 -1.3 V
VGS=-10V, ID=-5A 47
VGS=-10V, ID=-5A TJ=125℃ 74
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=-4.5V, ID=-4A 64
VGS=-2.5V, ID=-1A 85
On state drain current ID(ON) VGS=-10V, VDS=-5V -28 A
Forward Transconductance gFS VDS=-5V, ID=-5A 18 S
Input Capacitance Ciss 645 780
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 80 pF
Reverse Transfer Capacitance Crss 55 80
Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 4 12 Ω
Total Gate Charge (10V) 14 17
Qg
Total Gate Charge (4.5V) 7 8.5
VGS=-10V, VDS=-15V, ID=-5A nC
Gate Source Charge Qgs 1.5
Gate Drain Charge Qgd 2.5
Turn-On DelayTime td(on) 6.5
Turn-On Rise Time tr VGS=-10V, VDS=-15V, RL=3Ω, 3.5
Turn-Off DelayTime td(off) RGEN=3Ω 41 ns
Turn-Off Fall Time tf 9
Body Diode Reverse Recovery Time trr 11 13.5
IF=-5A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge Qrr 3.5 nC
Maximum Body-Diode Continuous Current IS -2.5 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking
Marking D1** F

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SMD Type MOSFET

P-Channel MOSFET
AO6401-HF (KO6401-HF)
■ Typical Characterisitics
25 20
10V VDS=-5V
4.5V
20
15

15
-ID (A)

-ID(A)
-2.5V 10 125°C
10

5 25°C
5
VGS=-2.0V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 1.8
Normalized On-Resistance

1.6 VGS=-10V
80 ID=-5A
VGS=2.5V
Ω)
RDS(ON) (mΩ

1.4
60
5
VGS=-4.5V
VGS=4.5V 1.2 ID=-4A
2
40 VGS=-2.5V
1 ID=-1A
VGS=10V

20 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
(Note E)

150 1.0E+01
ID=-5A
130 1.0E+00

110 1.0E-01
Ω)
RDS(ON) (mΩ

-IS (A)

90 1.0E-02 125°C
125°C

70 1.0E-03 25°C

50 25°C 1.0E-04

30 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 SMD Type MOSFET

P-Channel MOSFET
AO6401-HF (KO6401-HF)
■ Typical Characterisitics

10 1000
VDS=-15V
ID=-5A
8 800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4 400

Coss
2 200

Crss
0 0
0 5 10 15 0 5 10 15 20 25
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25°C

10.0 RDS(ON) 10µs 1000

limited 100µs
Power (W)
-ID (Amps)

1.0 100
1ms
10ms
10
0.1 TJ(Max)=150°C 10s
TA=25°C DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
-VDS (Volts)
. Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Ambient (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RθJA=110°C/W

0.1

PD
0.01
Zθ JA

Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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