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    The research program focuses on silicon-germanium devices and circuits through fundamental device physics, fabrication, characterization, simulation, circuit design, and applications. The team of over 20 researchers has expertise in SiGe HBT and strained Si CMOS devices, broadband measurement and simulation, noise and linearity, compact modeling, and extreme temperature and radiation effects testing. The research facilities support device and circuit measurements from DC to 100 GHz as well as all major simulation and design tools.

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    The research program focuses on silicon-germanium devices and circuits through fundamental device physics, fabrication, characterization, simulation, circuit design, and applications. The team of over 20 researchers has expertise in SiGe HBT and strained Si CMOS devices, broadband measurement and simulation, noise and linearity, compact modeling, and extreme temperature and radiation effects testing. The research facilities support device and circuit measurements from DC to 100 GHz as well as all major simulation and design tools.

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    © All Rights Reserved
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    6 views1 page

    Cressler - Group Poster 1-10

    Uploaded by

    azan
    The research program focuses on silicon-germanium devices and circuits through fundamental device physics, fabrication, characterization, simulation, circuit design, and applications. The team of over 20 researchers has expertise in SiGe HBT and strained Si CMOS devices, broadband measurement and simulation, noise and linearity, compact modeling, and extreme temperature and radiation effects testing. The research facilities support device and circuit measurements from DC to 100 GHz as well as all major simulation and design tools.

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    © All Rights Reserved
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    of 1

    Silicon--Germanium Devices and Circuits

    Silicon
    John D. Cressler’s Research Team

    Research Program Overview


    Program Focus:
    Fundamental device physics, fabrication issues,
    dc/ac characterization, cryogenic operation,
    noise, analog + digital + RF/microwave/mm-wave
    circuit design, profile optimization for specific
    circuit applications, device-circuit interactions,
    linearity, material issues, radiation effects,
    device simulation, compact modeling

    Research Expertise:
    - SiGe HBT and Strained Si CMOS device physics
    - dc and broadband device/circuit characterization
    - 2-D
    2 D and 3-D
    3 D device
    device-level
    level simulation SiG HBT T
    SiGe Technology
    h l
    - low-frequency and broadband noise, and linearity
    - compact modeling of advanced devices
    - extreme temperature operation (4K to 500C)
    - radiation effects (total dose + single event effects)
    - analog, digital, and mixed-signal circuit design

    R
    Research
    h Facilities:
    F iliti
    - exhaustive device/circuit measurement capabilities
    - dc to 100 GHz, fA to A, uV to kV, 4K to 500C
    - all major simulation and circuit design packages
    - IC fabrication and packaging
    SiGe Circuit Design

    Research Team:
    - 11 PhD, 10 MS, 1 UG, 1 research engineers
    - Affiliations:
    Georgia Tech Analog Consortium (GTAC)

    Contact Information:
    Dr. John D. Cressler
    cressler@ece.gatech.edu / (404) 894-5161 Radiation Effects
    http://users.ece.gatech.edu/~cressler/

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