Fransitor (BI I)

Bolonction
①
Bipolar
-

currentcontrolled
② device.
D
les.
③ Thermal stability;
constant.
④ Gain BW productis

⑨ Leakey current
*
operation
Dag switch.

⑪
JE Jc &
I "
-> RB RB - Cut of

② FB
->

FD ->
saturation
region
③ FD
->
RB -> Active regio
-> truflifier
I
-

+ Reverse active region. (X)

④ - RB FD

npn
L
I put

a=
S

-- -

I
-
-

o-

is I
E IB Ic Genera equation collector curt
for
=
+

/EIFP1)Ecol
-

=
+ minority
-charge
&

↓ cawier.

majority
#Ip)
changecasser Ico - Collector reverse
saturation current.
↳ Doubles for every 10
Wise in temperature.
x
rl (El
=

ix 1 =

value 0.98
Typical
=

↳ currentgain

value 49; BD 1
P Es
=

:Typical

/I 1 = 50
y
E):
=

(x
4 1
B
+
= =

=
=

1 -

G
Circuit Configuration
-> Ic BID+ (B + 1) Ico
T4,
=

Ico

C
-
Ic4; BY
A ICBO =Ico

-
ICEO when base is open.
collector to emitter current
↳

is open. Is
is Base =0

ICE0=(P+1) [co=(P11)
IcDo

1 IcDo
=

1 -
2
⑭Uranisconfiguratio +V

↳ RC

isthe e
 IP R= 5001, Rc 12kr,
=

VES=0VEE BV, Vac 6V

=
=

> C
C
EB Junction should

FERE+VED-VEE=O
be FB.

IE 4.6 mA (+Ve)
=

IcRc -
Vcc -VcD 0
=

L-
-
- VCI = -0.48V
IE
-
- IActive ↳ RB
--
-
 V VID=GOV=

I
Rc

2
Ri 330km, 2.7k
=

B 100;
=
VDR 0.7
=

Aptely
KVL (IIPS

VDD IDRD VDE 0

=

-
+ +

is 10-0-7 28MA
=

-
=

- 330k its
ARRy KUL 2OP)

Former
e
-
Va + IcRa+VCE =
0

2.4 volt. 2
2.82mA VCE =

Ic =

VCE >0.2
--
~Yes,
region
-

Active
--
Cut
-
anterin For a CE transistor.

t
IC a
~
·

IBS

- e
ID =

RC

ID
Ra

0.8
Ctersil JUCE

Switch ON
- Vc+ IcRc+VE 0
=

Saturative ->

↳ culty
Digital
-> Switch ORR

circuits. ICIBIS
Ic Vc
=

When VCE
-

oRiIc V
-
VE

17
=

B
=

Ra

⑮,
s
 HOV
1c0
es B
·

ke
k
=

eq
=

pie
FE

e
-

10 1cokID+VBE
+
O
=

7 93MA
In 1
=

120k
Ic BI =9.3
= MA.
/S

10 2kFc+ VE
0 -
VcE=-8.6(X)
=

VBR VDE(Sat) 0.8V

ID
10.8=
=
=

=
9211
0.2V
VCE VcE [St)
=
=

Ic
N2
=

4.SMA
=

In I;
2k

So Saturateu 92MA;
- = = YSMA.
I
Biasing
Bias & Voltage divider Bias
Fixed
③ Self Bial.
↓

0
is

See
-

V + BRD + VDE 0
=

La

it
Le

se Vie

↳ constant or fixed.
Once, Va, and Ris are selected,
the base his
current fixed
is
 divider
⑰ Voltage
-
·
TU

S
if
Vaa +Rc VLE =
-
+

W
I ic = V-VCE

See
+V

V+H
r
=

RTH R, IIR2

is
=

> ARKLKVL in loop 4. R. Re

=

VTH is. RTH + VBE O

R, R2
①
+
-
-

ite
Ic04, Ic4
ITY,
$4
⑰ Self Bic VDB +Vc
↑

VH Vaa
=

T5
-
- ·

3
Hithe
Re
Ri i= (B+D di
=

⑤
IP
A t

VDB + R, in VISB
TUBE+ ERE
S
->

Is
(i VE
=

Vaca
VIB = R
↳Reading in B Ris R, R2
=
R, +

↑
R2

BY,
bitsat
+4, F104,
FC4,
R, 20km, R
=
=

12k1, Rc R=
=

1km,
=

Vac Low
=

⑰co
Ii 28.1MA,
=
ic 2.81mA
=

UCE 4.35V.
=
Small signal models
superpositive
analysis as
can

A da
be afflied to

characteristics I
Ie
I
Rs
BTT.
-
G ↳
t

Fr de, Vs 0, VaFo Y,
=

R2

Vs -s.C
-RE
I

c -0.
c -
coupling capacitor
--

For as
case, Us to, Vac
=0,C+SC.
⑪ Ac equivalentcircuits
transister auflifier.

Smsiseki Ente
Vae
↳, a, Use, b

① I

healt
·
- Bacchfe

snie
c
is
6
A
·

+
Voe LFE Baz
=

i
-e

transconductance.
I
in hfeis
bevs= gmuse=>
Im=
= =
 ~H
Tru-
·

- I Im
is Vor

Voe-
Wet as resistance.
emitter
he is

stre
We >
neis freshe
->

Se Ife -) 1

It
hfe)re here

Swith
For now transistor
-

ic Este (VDE/2-1] Isevaulut:=1.

=
=

dic

BE
e/U.
=

Vi

= Im
==
=

We
=i Ic
=

! ↳
9 point.

Le
 is he is

=
Rp = RallRz Ves

i
·

i Re

tiiie e
es

fette) this ente

4 R0
- y 1 4fz) [ve+RE)
=

= +

Use (We+Ret
~

->
-
-ietmecretes
-
= age
gain (AV)

Ar
I
=e
=

Vo
hye(re+RE)

ARE the off voltage

is -180

out8 phases ill

voltage.

vin-El-Vont -

#
-

wi
amre
 Aus
=>

Y-**s
=

-
I

-
An
, (n) *Ys
=

↳tr
circuit
eqFor selfbias
the

100; R, R2 26K
=

UFE=hfe
=

Rc 9802, =
RR 2km,
=
Vi LOV
=

as
gm, we, Rin, Ar

= 9m i Vi
e, V
=

25mV
-
5V

R+H
=
=
13km

->
-
VH+FBRTH+(UFE+1) REID + 0.7 0
=

In
2kxTor=ZOMA
=

Ic BIn
=

2mA
=

Im 2m

I
=

-= 76.7me
=

26m

G
-Ve I
- i32
=

Rin
=

R+H1l he(Ve+RE) 12.2KM

=
=

- Av=-Re/re byfears
(with capacitors
 -
Av = -
Rc
-

We + RE

↳
load.
⑪ Amplifier with

C, and 22-> coupling capacitors CL

I
·
by capacitor th

=andt
= - bars

↓ RL

e I
he is

C
⑤
in
Ro-heVe
Rin Rp IIRs

Av
=

=
=

ni"
in eyein
=
mpence
a SetVs 0;
= a connecta

currentIs.
volters source us with

See
is
R Rs//Rp
=

Re
Rs + RP

ARply KCL atmode c V Apply KCL atmode b

Vs
is the is=
in hye is+ Vn -
-

ris =

a Lo 0
=
is ("
-
+nte)re] 0
=

* Re r.
=

them
= =
1c

Im
0.3861A/V
=

Rs 1k1, RB 93km,
=

-in
Ses
=

R2 Akr,
=

Rc 2501,
=

4 0,= YFMF Q,
 self bias np E
amplifier.
eq For a

Re 0, Rs 0, R 3K, =

R2 204,
=

R1
=

100K,
=

c 2 =

ICONF, B= 150, UH 3k1

=

is Us Ace (20x108t) BC10t)

= +

A?
in Vo(t)
=?
i vH+
I
re
=

=2

=-150

is Vo =-
Av.Vi=-150[AG(20x106H)
- Sin (1067)].
Vo -150 BanClotS
ii) = x

I reactance high for

↳ very small,
is

low free. Signal

 circuit.
eg. Determine G-points given z4V
-

IActive B
Sin
-

e
- Up = 0.2

Spoken - Ic
t

I
VCE
V -
V+

3
H
=

x IE

= 1km

24 2.10 =

RiH R,.R2
0
=

9.09km
IR.
=

24
+

&

vete
-Er -

IE -NA +

RTH Fi+ VBE+IK Ie 0

=

IB 33.54MA
=

Fc 47x 1.2nA
=
=

UCE Vac =
- Fc (Ra+RE] = 14-16V.*