StrongIRFET™

IRL60B216
Application HEXFET® Power MOSFET
 Brushed Motor drive applications
  VDSS 60V
 BLDC Motor drive applications D

Battery powered circuits RDS(on) typ. 1.5m

 Half-bridge and full-bridge topologies max 1.9m
 Synchronous rectifier applications G
ID (Silicon Limited) 305A
 Resonant mode power supplies
S
 OR-ing and redundant power switches ID (Package Limited) 195A
 DC/DC and AC/DC converters
 DC/AC Inverters

Benefits S
Optimized for Logic Level Drive G
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
TO-220AB
Fully Characterized Capacitance and Avalanche SOA
IRL60B216
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free G D S
Gate Drain Source

Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRL60B216 TO-220 Tube 50 IRL60B216

6 315
RDS(on), Drain-to -Source On Resistance (m)

ID = 100A Limited By Package

5 270

225
ID, Drain Current (A)

TJ = 125°C 180
3
135
2
90

1 TJ = 25°C
45

0 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175

VGS, Gate -to -Source Voltage (V) TC , Case Temperature (°C)

Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature

1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 305
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 215
A 
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current  780
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and
-55 to + 175  
TSTG Storage Temperature Range °C  
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)  
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy  530
mJ
EAS (Thermally limited) Single Pulse Avalanche Energy  1045
IAR Avalanche Current  A
See Fig 15, 16, 23a, 23b
EAR Repetitive Avalanche Energy  mJ
Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.4
RCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W  
RJA Junction-to-Ambient  ––– 62

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 2mA 
––– 1.5 1.9 VGS = 10V, ID = 100A 
RDS(on) Static Drain-to-Source On-Resistance m
––– 1.7 2.2 VGS = 4.5V, ID = 50A 
VGS(th) Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 250µA
––– ––– 1.0 VDS = 60 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 150 VDS = 60V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.0 ––– 

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
Current imitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V.
ISD  100A, di/dt  1420A/µs, VDD  V(BR)DSS, TJ  175°C.
Pulse width  400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V.
 Pulse drain current is limited to 780A by source bonding technology.

2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 264 ––– ––– S VDS = 10V, ID = 100A
Qg Total Gate Charge ––– 172 258 ID = 100A
Qgs Gate-to-Source Charge ––– 53 ––– VDS = 30V
nC  
Qgd Gate-to-Drain Charge ––– 80 ––– VGS = 4.5V
Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 92 –––
td(on) Turn-On Delay Time ––– 70 ––– VDD = 30V
tr Rise Time ––– 185 ––– ID = 30A
ns
td(off) Turn-Off Delay Time ––– 190 ––– RG= 2.7
tf Fall Time ––– 120 ––– VGS = 4.5V
Ciss Input Capacitance ––– 15570 ––– VGS = 0V
Coss Output Capacitance ––– 1260 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 880 ––– pF   ƒ = 1.0MHz, See Fig.7
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1260 ––– VGS = 0V, VDS = 0V to 48V
Coss eff.(TR) Output Capacitance (Time Related) ––– 1645 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics  
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol D
IS ––– ––– 305
(Body Diode) showing the
A
Pulsed Source Current integral reverse G

ISM ––– ––– 780

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS =100A,VGS = 0V 

dv/dt Peak Diode Recovery dv/dt  ––– 11 ––– V/ns TJ = 175°C,IS = 100A,VDS = 60V
––– 52 ––– TJ = 25°C VDD = 51V
trr Reverse Recovery Time ns
––– 57 ––– TJ = 125°C IF = 100A,
––– 91 ––– TJ = 25°C di/dt = 100A/µs 
Qrr Reverse Recovery Charge nC
––– 116 ––– TJ = 125°C  
IRRM Reverse Recovery Current ––– 3.0 ––– A TJ = 25°C 

3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

  
IRL60B216
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

8.0V

ID, Drain-to-Source Current (A)

8.0V
6.0V 6.0V
5.0V 5.0V
4.5V 3.5V 4.5V
4.0V 4.0V
3.5V BOTTOM 3.5V BOTTOM 3.5V

100 100

60µs PULSE WIDTH 60µs PULSE WIDTH

Tj = 25°C Tj = 175°C
10 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics

1000 2.2

RDS(on) , Drain-to-Source On Resistance

ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)

100 1.8
TJ = 175°C (Normalized)
TJ = 25°C
10 1.4

1 1.0
VDS = 25V
60µs PULSE WIDTH
0.1 0.6
0 2 4 6
-60 -20 20 60 100 140 180
VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

1000000 14
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED ID= 100A
12
VGS, Gate-to-Source Voltage (V)

Crss = Cgd
VDS = 48V
Coss = Cds + Cgd
100000 VDS = 30V
10
C, Capacitance (pF)

VDS= 12V
Ciss 8
10000
Coss 6
Crss
4
1000

100 0
0.1 1 10 100 0 50 100 150 200 250 300 350 400 450
VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 8. Typical Gate Charge vs.

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015
  
IRL60B216
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000

ID, Drain-to-Source Current (A)

TJ = 175°C
ISD, Reverse Drain Current (A)

100µsec
100
100

Limited by Package
1msec
TJ = 25°C 10
10

1
10msec
1 DC
0.1 Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse
0.1 0.01
0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10

VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

74 2.0
Id = 2.0mA
1.8
72
1.6
70 1.4

1.2
Energy (µJ)
68
1.0
66
0.8

64 0.6

0.4
62
0.2
60 0.0
-60 -20 20 60 100 140 180 -10 0 10 20 30 40 50 60
TJ , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)

Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy

4.0
RDS (on), Drain-to -Source On Resistance (m)

VGS = 3.5V
3.5 VGS = 4.0V
VGS = 4.5V
VGS = 8.0V
3.0 VGS = 10V

2.5

2.0

1.5

1.0
0 50 100 150 200
ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216
1

Thermal Response ( Z thJC ) °C/W D = 0.50

0.1 0.20
0.10
0.05
0.01 0.02
0.01

0.001 SINGLE PULSE

( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  Tj = 150°C and
Tstart = 25°C (Single Pulse)
Avalanche Current (A)

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Avalanche Current vs. Pulse Width

600
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)
500 ID = 100A 1.Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for every
400 part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
300 3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
200
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
100 6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav  

6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216
3.0 20
VGS(th), Gate threshold Voltage (V) IF = 60A
2.5 VR = 51V
16
TJ = 25°C
TJ = 125°C
2.0
12

IRRM (A)
1.5

8
1.0 ID = 250µA
ID = 1.0mA
ID = 1.0A 4
0.5

0.0 0
-75 -25 25 75 125 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/µs)

Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
20 400
IF = 100A IF = 60A
VR = 51V 350 VR = 51V
16 TJ = 25°C
TJ = 25°C
TJ = 125°C 300 TJ = 125°C

12
QRR (nC)
IRRM (A)

250

200
8

150
4
100

0 50
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/µs) diF /dt (A/µs)

Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt

400
IF = 100A
350 VR = 51V
TJ = 25°C
300 TJ = 125°C
QRR (nC)

250

200

150

100

50
0 200 400 600 800 1000
diF /dt (A/µs)

Fig 21. Typical Stored Charge vs. dif/dt

7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

V(BR)DSS

15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS

Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds

Vgs

VDD 
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform

8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
YEA R 0 = 2000
N o t e : "P " in a s s e m b ly lin e p o s it io n ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015

 
IRL60B216

Qualification Information†  
Industrial
Qualification Level   (per JEDEC JESD47F) ††

Moisture Sensitivity Level TO-220 N/A

RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
10/9/2015  Corrected typo on Fig5. Vds from 10V to 25V on page 4.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback October 9, 2015