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VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series

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Vishay Semiconductors
Power Silicon Rectifier Diodes,
(Stud Version), 35 A, 40 A, 60 A
FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

DO-5 (DO-203AB)

PRIMARY CHARACTERISTICS
IF(AV) 35 A, 40 A, 60 A
Package DO-5 (DO-203AB)
Circuit configuration Single

MAJOR RATINGS AND CHARACTERISTICS


PARAMETER TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
35 (1) 35 (1) 40 (1) 60 (1) A
IF(AV)
TC 140 (1) 140 (1) 150 (1) 140 (1) °C
50 Hz 480 380 765 860
IFSM A
60 Hz 500 (1) 400 (1) 800 (1) 900 (1)
50 Hz 1140 730 2900 3700
I2t A2s
60 Hz 1040 670 2650 3400
I2√t 16 100 10 300 41 000 52 500 A2√s
VRRM Range 50 to 600 (1) 700 to 1000 (1) 50 to 600 (1) 50 to 600 (1) V
TJ -65 to +200 -65 to +200 -65 to +200 -65 to +200 °C
Note
(1) JEDEC® registered values

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE VRM, MAXIMUM DIRECT
PEAK REVERSE VOLTAGE REVERSE VOLTAGE
TYPE NUMBER
(TJ = -65 °C to +200 °C (2)) (TJ = -65 °C to +200 °C (2))
V V
VS-1N1183 VS-1N1183A VS-1N2128A 50 (1) 50 (1)
VS-1N1184 VS-1N1184A VS-1N2129A 100 (1) 100 (1)
VS-1N1185 VS-1N1185A VS-1N2130A 150 (1) 150 (1)
VS-1N1186 VS-1N1186A VS-1N2131A 200 (1) 200 (1)
VS-1N1187 VS-1N1187A VS-1N2133A 300 (1) 300 (1)
VS-1N1188 VS-1N1188A VS-1N2135A 400 (1) 400 (1)
VS-1N1189 VS-1N1189A VS-1N2137A 500 (1) 500 (1)
VS-1N1190 VS-1N1190A VS-1N2138A 600 (1) 600 (1)
VS-1N3765 VS-1N2160 700 (1) 700 (1)
VS-1N3766 800 (1) 800 (1)
VS-1N3767 900 (1) 900 (1)
VS-1N3768 1000 (1) 1000 (1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
(1) JEDEC® registered values
(2) For 1N1183 Series and 1N3765 Series T = -65 °C to +190 °C
C

Revision: 10-Jul-2018 1 Document Number: 93492


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VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum average forward current 1-phase operation, 35 (1) 35 (1) 40 (1) 60 (1) A
IF(AV)
at case temperature 180° sinusoidal conduction 140 (1) 140 (1) 150 (1) 140 (1) °C
Half cycle 50 Hz
sine wave or 6 ms Following any 480 380 765 860
rectangular pulse rated load
condition and
Half cycle 60 Hz with rated
sine wave or 5 ms VRRM applied 500 (1) 400 (1) 800 (1) 900 (1)
Maximum peak one cycle rectangular pulse
IFSM A
non-repetitive surge current Half cycle 50 Hz Following any
sine wave or 6 ms rated load 570 455 910 1000
rectangular pulse condition and
Half cycle 60 Hz with ½ VRRM
sine wave or 5 ms applied following 595 475 950 1050
rectangular pulse surge = 0
t = 10 ms With rated VRRM 1140 730 2900 3700
applied following
Maximum I2t for fusing
t = 8.3 ms surge, initial 1040 670 2650 3400
TJ = TJ maximum
I2t A2s
t = 10 ms With VRRM = 0 1610 1030 4150 5250
Maximum I2t for individual following surge,
device fusing t = 8.3 ms initial 1470 940 3750 4750
TJ = TJ maximum
Maximum I2√t for individual t = 0.1 to 10 ms,
I2√t (2) 16 100 10 300 41 500 52 500 A2√s
device fusing VRRM = 0 following surge
Maximum peak forward voltage 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) V
VFM TJ = 25 °C
at maximum forward current (IFM) 110 110 126 188 A
VRRM = 700 - 5.0 (1) - -
VRRM = 800 - 4.0 (1) - -
Maximum average Maximum rated IF(AV) and TC
VRRM = 900 IR(AV) - 3.0 (1) - - mA
reverse current
VRRM = 1000 - 2.0 (1) - -
Maximum rated IF(AV), VRRM and TC 10 (1) - 2.5 (1) 10 (1)
Notes
(1) JEDEC® registered values
(2) I2t for time t = I2√t x √t
x x

THERMAL AND MECHANICAL SPECIFICATIONS


PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS
Maximum operating
TC -65 to +190 (1) -65 to +200
case temperature range
°C
Maximum storage
TStg -65 to +175 (1) -65 to +200
temperature range
Maximum internal thermal
RthJC DC operation 1.00 (1) 1.1 (1) 0.65 (1)
resistance, junction to case
°C/W
Thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.25
case to sink
Not lubricated thread, tighting on nut (2) 3.4 (30)
Maximum allowable Lubricated thread, tighting on nut (2) 2.3 (20) N·m
mounting torque
Not lubricated thread, tighting on hexagon (3) 4.2 (37) (lbf · in)
(+ 0 %, - 10 %)
Lubricated thread, tighting on hexagon (3) 3.2 (28)
17 g
Approximate weight
0.6 oz.
Case style JEDEC® DO-5 (DO-203AB)
Notes
(1) JEDEC registered values®
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks

Revision: 10-Jul-2018 2 Document Number: 93492


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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Maximum Allowable Case Temperature (°C)

190 103

IF - Instantaneous Forward Current (A)


180
Ø TJ = 190 °C
170 Conduction Period
Typical
160 102
150
DC
140
+60 °C +120 °C +180 °C
130
101
120 TJ = 25 °C
110

100 1
0 10 20 30 40 50 60 0 1 2 3 4 5 6
Average Forward Current Over Full Cycle (A) IF - Instantaneous Forward Voltage (V)

Fig. 1 - Maximum Allowable Case Temperature vs. Fig. 4 - Typical Forward Voltage vs. Forward Current,
Average Forward Current, 1N1183 and 1N3765 Series 1N1183 and 1N3765 Series

70 1.0
TJ = 190 °C +60 °C +120 °C At any rated load condition and with
Average Forward Power Loss

rated VRRM applied following surge


60
Forward Current (Per Unit) 0.9
Series Per Unit Base-A
Over Full Cycle (W)

Peak Half Sine Wave

50 0.8 1N1183 500


1N3765 400
+180 °C
40 0.7
DC
30 0.6
50 Hz 60 Hz
20 0.5

Ø
10 0.4
Conduction Period
0 0.3
0 10 20 30 40 50 1 2 4 6 8 10 20 40 60
Number of Equal Amplitude
Average Forward Current Over Full Cycle (A) Current Pulses (N)
Fig. 2 - Typical Low Level Forward Power Loss vs. Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Average Forward Current (Sinusoidal Current Waveform), Number of Current Pulses, 1N1183 and 1N3765 Series
1N1183 and 1N3765 Series

105 100
TJ = 140 °C
90
DC
Average Forward Current
Average Forward Current

+180 °C 80
104 +120 °C
Over Full Cycle (A)
Over Full Cycle (A)

+60 °C 70 +180 °C Wave


DC
60
+120 °C & Wave
103 50 +180 °C Wave
40
30 +60 °C & Wave
102
20
+Conduction Period
Ø 10
Conduction Period
10 0
10 102 103 104 110 120 130 140 150 160 170 180 190 200
Average Forward Power Loss
Maximum Allowable CaseTemperature (°C)
Over Full Cycle (W)
Fig. 3 - Typical High Level Forward Power Loss vs. Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Average Forward Current (Sinusoidal Current Waveform), Temperature, 1N1183A Series
1N1183 and 1N3765 Series

Revision: 10-Jul-2018 3 Document Number: 93492


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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
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100 1.0
+180 °C Wave DC At any rated load condition and with

Maximum Peak Half Sine Wave


90
Average Forward Power Loss

rated VRRM applied following surge

Forward Current (Per Unit)


+180 °C Wave 0.9
80 Series Per Unit Base-A
+120 °C & Wave
Over Full Cycle (W)

0.8 1N1183A 800


70
+60 °C & Wave
60 0.7
50
0.6
40
60 Hz
30 TJ = 200 °C 0.5
20 50 Hz
0.4
10 +Conduction Period

0 0.3
0 10 20 30 40 50 60 70 1 2 4 6 8 10 20 40 60
Number of Equal Amplitude
Average Forward Current Over Full Cycle (A) Current Pulses (N)
Fig. 7 - Maximum Low Level Forward Power Loss vs. Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Average Forward Current, 1N1183A Series Number of Current Pulses, 1N1183A Series

104 1.0
+180 °C Wave DC At any rated load condition and with
Maximum Peak Half Sine Wave
rated VRRM applied following surge
Average Forward Power Loss

Forward Current (Per Unit)


0.9
+180 °C Wave
Series Per Unit Base-A
+120 °C & Wave 1N2128A 900
Over Full Cycle (W)

0.8
103 +60 °C & Wave
0.7

0.6
60 Hz
102 TJ = 200 °C 0.5

0.4
50 Hz
+Conduction Period
10 1 0.3
10 102 103 1 2 4 6 8 10 20 40 60
Number of Equal Amplitude
Average Forward Current Over Full Cycle (A) Current Pulses (N)
Fig. 8 - Maximum High Level Forward Power Loss vs. Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Average Forward Current, 1N1183A Series Number of Current Pulses, 1N2128A Series
Maximum Allowable Case Temperature (°C)

104 200
+60 °C & Wave
Instantaneous Forward Current (A)

+120 °C & Wave


180
+180 °C Wave
103
+180 °C Wave
160
2
10
140

TJ = 25 °C DC
120
10

100
TJ = 200 °C +Conduction Period
1
80

10-1 60
0 0.5 1 1.5 2 2.5 3 3.5 0 10 20 30 40 50 60 70 80 90 100

Instantaneous Forward Voltage (V) Average Forward Current Over Full Cycle (A)
Fig. 9 - Maximum Forward Voltage vs. Forward Current, Fig. 12 - Maximum Allowable Case Temperature vs.
1N1183A Series Average Forward Current, 1N2128A Series

Revision: 10-Jul-2018 4 Document Number: 93492


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
70 103 +60 °C 105
& Wave
Average Forward Power Loss

+90 °C & Wave

Average Forward Power Loss


60 +180 °C Wave
TJ = 140 °C +180 °C Wave
Over Full Cycle (W)

Over Full Cycle (W)


50 +60 °C & Wave TJ = 140 °C
+120 °C & Wave
40 +180 °C Wave +Conduction
Period
+180 °C Wave 102 104
DC
30
+Conduction Period
DC
20
DC
+180 °C Wave
10 +180 °C Wave
+120 °C & Wave
+60 °C & Wave
0 10 103
0 10 20 30 40 50 10 102 103 104
Average Forward Current Over Full Cycle (A) Average Forward Current Over Full Cycle (A)

Fig. 13 - Maximum Low Level Forward Power Loss vs. Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series Average Forward Current, 1N2128A Series

104
Instantaneous Forward Current (A)

103

102

101 TJ = 140 °C

TTJJ == 25 °C
°C

1.0
0 1 2 3 4 5 6 7

Instantaneous Forward Voltage (V)


Fig. 15 - Maximum Forward Voltage vs. Forward Current,
1N2128A Series

LINKS TO RELATED DOCUMENTS


Dimensions www.vishay.com/doc?95360

Revision: 10-Jul-2018 5 Document Number: 93492


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Outline Dimensions
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Vishay Semiconductors
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)

Ø 14.6 (0.57)

6.1 (0.24)
7.0 (0.28)

1.03 (0.04)
Ø 4.10 (0.16) MAX.
Ø 3.80 (0.15)

4 (0.16) MIN.

25.4 (1.0) MAX.

10.8 (0.43)
11.4 (0.45)

10.7 (0.42)
11.5 (0.45)

1/4" 28UNF-2A

17.40 (0.68) MIN.


1.0 (0.04)
MAX. Across flats

Revision: 19-Nov-2020 1 Document Number: 95360


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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000

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