1N3208 Series

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Vishay Semiconductors
Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
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PRODUCT SUMMARY 
IF(AV) 15 A


MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
15 (1) A
IF(AV)
TC 150 (1) °C
50 Hz 239
IFSM A
60 Hz 250 (1)
50 Hz 286
I2t A2s
60 Hz 260
I2t 3870 A2s
VRRM Range 50 to 600 V
TJ - 65 to 175 °C
Note
(1) JEDEC registered values

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM REPETITIVE PEAK VRM, MAXIMUM DIRECT
REVERSE VOLTAGE REVERSE VOLTAGE
TYPE NUMBER
(TJ = - 65 °C TO 175 °C) (TJ = - 65 °C TO 175 °C)
V V
1N3208 50 (1) 50 (1)
1N3209 100 (1) 100 (1)
1N3210 200 (1) 200 (1)
1N3211 300 (1) 300 (1)
1N3212 400 (1) 400 (1)
1N3213 500 (1) 500 (1)
1N3214 600 (1) 600 (1)
Notes
(1) JEDEC registered values

• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R

Revision: 08-Apr-13 1 Document Number: 93496

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N3208 Series
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Vishay Semiconductors

FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum average forward current  15 A
IF(AV) 180° sinusoidal conduction
at case temperature 150 (1) °C
Half cycle 50 Hz sine wave
Following any rated load 239
or 6 ms rectangular pulse
condition and with rated
Half cycle 60 Hz sine wave VRRM applied 250 (1)
Maximum peak one cycle or 5 ms rectangular pulse
IFSM A
non-repetitive surge current Half cycle 50 Hz sine wave
Following any rated load 284
or 6 ms rectangular pulse
condition and with VRRM
Half cycle 60 Hz sine wave applied following surge = 0 297
or 5 ms rectangular pulse

t = 10 ms With rated VRRM applied 286

Maximum I2t for fusing following surge,
t = 8.3 ms initial TJ = 150 °C 260
I2t A2s
t = 10 ms 403
Maximum I2t for individual With VRRM = 0 following
device fusing surge, initial TJ = 150 °C
t = 8.3 ms 368
Maximum I2t for individual
I2t (2) t = 0.1 ms to 10 ms, VRRM = 0 following surge 3870 A2s
device fusing
Maximum forward voltage drop VFM IF(AV) = 15 A (47.1 A peak), TC = 150 °C 1.5 (1) V
Maximum average reverse current IR(AV) Maximum rated IF(AV) and TC = 150 °C 10 (1) mA
Notes
(1) JEDEC registered values
(2) I2t for time t = I2t x t
x x

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating 
TJ, TStg - 65 to 175 (1) °C
and storage temperature range
Maximum internal thermal
RthJC DC operation 0.65
resistance, junction to case
°C/W
Thermal resistance,
RthCS Mounting surface, smooth, flat and greased 0.25
case to sink
Not lubricated thread, tighting on nut (2) 3.4 (30)
Lubricated thread, tighting on nut (2) 2.3 (20)
Maximum allowable mounting torque
(+ 0 %, - 10 %) Not lubricated thread, tighting on hexagon (3) 4.2 (37)
Lubricated thread, tighting on hexagon (3) 3.2 (28)
28.5 g
Weight
1 oz.
Case style JEDEC DO-203AB (DO-5)
Notes
(1) JEDEC registered values
(2) Recommended for pass-through holes
(3) Recommended for holed threaded heatsinks

Revision: 08-Apr-13 2 Document Number: 93496

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 1N3208 Series
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Vishay Semiconductors
35 120
100 60°

Average Forward Power Loss

30
Average Forward Current

90 180°
Ø

Over Full Cycle (W)

Over Full Cycle (A)

DC Conduction period 80 120°

25 DC
70
20 60
180° 50 TJ = 140 °C
15
40
120°
10 30
60° Ø
20 Conduction period
5
10
0 0
110 120 130 140 150 160 170 180 0 10 20 30 40 50 60 70 80 90

Maximum Allowable Case Temperature (°C) Average Forward Current Over Full Cycle (A)
Fig. 1 - Average Forward Current vs. Fig. 3 - Maximum Low Level Forward Power Loss vs.
Maximum Allowable Case Temperature Average Forward Current

250
105
At any rated load condition and

Average Forward Power Loss

with rated VRRM following surge
Peak Half Sine Wave
Forward Current (A)

104

Over Full Cycle (W)

200 120°

180°
103 60°
150
TJ = 140 °C
50 Hz 60 Hz
DC
102
100 Ø
Conduction period

10
1 2 4 6 8 10 20 40 60 10 102 103 104
Number of Equal Amplitude Average Forward Current Over Full Cycle (A)
Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current vs. Fig. 4 - Maximum High Level Forward Power Loss vs.
Number of Current Pulses Average Forward Current
Instantaneous Forward Current (A)

103

102

TJ = 140 °C

10

TJ = 25 °C

1
0 1 2 3 4 5 6 7

Instantaneous Forward Voltage (V)

Fig. 1 - Maximum Forward Voltage vs. Forward Current

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95360

Revision: 08-Apr-13 3 Document Number: 93496

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
Vishay Semiconductors

DO-203AB (DO-5) for

1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS in millimeters (inches)

Ø 14.6 (0.57)

6.1 (0.24)
7.0 (0.28)

1.03 (0.04)
Ø 4.10 (0.16) MAX.
Ø 3.80 (0.15)

4 (0.16) MIN.

25.4 (1.0) MAX.

10.8 (0.43)
11.4 (0.45)

10.7 (0.42)
11.5 (0.45)

1/4" 28UNF-2A
for metric devices: M6 x 1

17.40 (0.68) MIN.

1.0 (0.04)
MAX. Across flats

Document Number: 95360 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 29-Sep-08 1
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Revision: 02-Oct-12 1 Document Number: 91000