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  • Sheet 2 Electronic Circuits

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    Rawan Rafat
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    This document contains an electronic circuits practice exam sheet from Helwan University for second year engineering students. It has 4 questions on p-n junction diodes, including calculating barrier potential from doping, determining voltage from given reverse saturation current, calculating currents in germanium and silicon diodes with given parameters, and finding voltages and currents in circuits with ideal diodes. It provides useful information on intrinsic carrier concentrations and thermal voltage at room temperature for silicon and germanium. The professor wishes the students the best of luck on the exam.

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    This document contains an electronic circuits practice exam sheet from Helwan University for second year engineering students. It has 4 questions on p-n junction diodes, including calculating barrier potential from doping, determining voltage from given reverse saturation current, calculating currents in germanium and silicon diodes with given parameters, and finding voltages and currents in circuits with ideal diodes. It provides useful information on intrinsic carrier concentrations and thermal voltage at room temperature for silicon and germanium. The professor wishes the students the best of luck on the exam.

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    4 views2 pages

    Sheet 2 Electronic Circuits

    Uploaded by

    Rawan Rafat
    This document contains an electronic circuits practice exam sheet from Helwan University for second year engineering students. It has 4 questions on p-n junction diodes, including calculating barrier potential from doping, determining voltage from given reverse saturation current, calculating currents in germanium and silicon diodes with given parameters, and finding voltages and currents in circuits with ideal diodes. It provides useful information on intrinsic carrier concentrations and thermal voltage at room temperature for silicon and germanium. The professor wishes the students the best of luck on the exam.

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    © All Rights Reserved
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    of 2

    Helwan University Electronic Circuits

    Faculty of Engineering 2nd Year


    2023/2024 Sheet (2)

    Question 1
    Consider p-n junction diode is doped with NA corresponding to 1 acceptor atom per 108
    germanium atoms. Calculate the barrier potential VB at room temperature. Assume ND = 103NA.

    Question 2:
    If the reverse saturation current in a silicon diode is 1nA, what is the applied voltage for a diode
    current 2.5 μA at room temp.

    Question 3:
    The diode D1 is germanium with a potential barrier (VB) 0.2V and an incremental resistance (Rf)
    20Ω whereas the diode D2 is silicon with a potential barrier (VB) 0.6V and an incremental
    resistance (Rf) 15Ω. Calculate the diodes currents.

    Question 4:
    For the circuits shown in Figure using ideal diodes, find the values of the voltages and currents
    indicated.
    Useful information:

    At room temperature (300 K),

    ni(Si) = 1.5 x 1010 atoms /cm3, ni(Ge)= 2.5 x 1013 atoms /cm3 and VT =25mV

    With my best Wishes

    Dr. Amr Wageeh

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