EC6701-RF AND MICROWAVE ENGINEERING

ANNA UNIVERSITY QUESTION BANK

UNIT-I TWO PORT NETWORK THEORY
Review of Low frequency parameters: Impedance, Admittance, Hybrid and ABCD parameters, Different
types of interconnection of Two port networks, High Frequency parameters, Formulation of S parameters,
Properties of S parameters, Reciprocal and lossless Network, Transmission matrix, RF behavior of
Resistors, Capacitors and Inductors.

PART A
1. Give some example for reciprocal devices.
2. What is ABCD matrix?
3. Define insertion loss.
4. Name the properties of S parameters.
5. Draw the equivalent circuit of a practical capacitor.
6. Give the relationship between [S] and [Z].
7. List any four reasons for the wide use of RF.
8. What are the advantages of S parameters over ‘Z’ or ‘Y’ parameters?
9. Mention the limitations in measuring Z,Y and ABCD parameters at microwave frequencies.
10. A 5dB attenuator is specified as having VSWR of 1.2.Assuming that device is reciprocal, find the
S parameters.
11. Find the ABCD matrix of a transformer with N:1 turns.
12. State the principle advantages of microwave frequencies over lower frequency.
13. What do you mean by symmetry of scattering matrix?
14. What is ESR?
15. Draw the equivalent circuit of an inductor and resistor at radio frequency.
3.2 1 
16. Given Y     find S parameters.
 1 3.2
17. Find S parameters for the following network. Z0=75𝜴

R3
75 ohm

Port1 Port2
18. Find the s parameters for the shunt impedance 75 ohm, with Z0 =75 ohm.
19. Identify the type of component with S parameters of S 11=S12=0, S21≠S22.
PART B
1. State and prove the unitary property and zero property of scattering matrix.(8)
2. Write down the relationship between ABCD parameters and ‘S’parameters. (8)
3. Formulate scattering matrix for a N-port microwave network. (8)
4. Give the [ABCD] matrix for a two port network and derive its [S] matrix. (8)
5. The S-parameters of a two port network are given by
 s11  0.2  90o s12  0.5  90o 
 
 s21  0.5  0 s22  0.2  90o 
o

(i) Determine whether the network is lossy or not.

(ii) Is the network symmetrical and reciprocal? Find the insertion loss of the network. (8)
6. When do you prefer transmission matrix? Obtain the ABCD matrix of a transformer with turns
ratio of N:1. (8)

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 4 2
7. The impedance matrix of a certain lumped element network is given by  Zij    
2  4
 S11 S12 
.Determine equivalent scattering parameter matrix  Sij   
S22 
for the [Z]. (8)
 S21
8. A shunt impedance Z is connected across a transmission line with characteristic impedance Z 0 .
Find the S matrix of the junction. (8)
9. List and explain the properties of S parameters. (8)
10. The S-parameters of a two port network are given by
 s11  0.2  0o s12  0.6  90o 
 
 s21  0.6  90 s22  0.1  0o 
o

(iii) Prove that the network is reciprocal but not lossless.

(iv) Find the return loss at port1 when port2 is short circuited . (8)

11. A four port network has the scattering matrix shown below
 0.1  90o 0.6  45o 0.6  45o 0 
 o 
0.6  45o 0 0 0.6  45 
S 
 0.6  45o 0 0 0.6  45o 
 

 0 0.6  45o 0.6  45o 0 

(i) Is the network is lossless?
(ii) Is the network Reciprocal?
(iii) What is the return loss at port1 when all other ports are terminated with matched loads?
(iv) What is the insertion loss and phase dialog between ports2 and ports4,when all other
ports are terminated with matched loads?
(v) What is the reflection coefficient seen at port1 in a short circuit is placed at the terminal
plane of port3, and all other ports are terminated with matched loads? (16)
12. State and prove the following properties of scattering matrix. (8)
(i) Phase shift property
(ii) Unitary property
13. The input of an amplifier has a VSWR of 2 and the output has a VSWR of 3. Find the
magnititudes of the S parameters S11 and S22 under matched condition. (8)
14. Draw the high frequency equivalent of wire, resistor, capacitor, and inductor and explain.
15. Evaluate the S parameters from Z parameters. (8)
2  3 j 5 j 
Z     j 
, Z 0  50 .
 3j
16. Derive Z and Y matrix formulation of multiport network.(8)
17. State and prove the symmetry of S matrix for a reciprocal network.(8)

18. Find the S parameters for the following circuit. Z0=50𝜴

R1

R2
20 ohm
j50 ohm

Port1 port2

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UNIT II RF AMPLIFIERS AND MATCHING NETWORKS 9
Characteristics of Amplifiers, Amplifier power relations, Stability considerations, Stabilization Methods,
Noise Figure, Constant VSWR, Broadband, High power and Multistage Amplifiers, Impedance matching
using discrete components, Two component matching Networks, Frequency response and quality factor,
T and Pi Matching Networks, Microstrip Line Matching Networks.
PART A
1. Distinguish between conditional and unconditional stabilities of amplifier.
2. A GaAs MESFET has the following parameter:
S11=0.65∠-154o S12=0.02∠40o S 21=2.04∠185o S 11=0.55∠-35o
Calculate its maximum stable power gain.
3. Write the expression for noise figure of a two port amplifier.
4. Define stability.
5. What are the needs for impedance matching networks?
6. Define power gain of amplifier in terms of S-parameters and reflection coefficients.
7. What are the considerations in selecting matching networks?
8. Define transducer power gain.
9. Give the expression that relates nodal quality factor(Qn) with load quality factor(Q L).
10. Define :Noise figure
11. Define unilateral power gain.
12. A 6 dB attenuator is specified as having VSWR of 1.2. Assuming that the device is reciprocal,
find the S parameters.
13. Define maximum available gain.
14. What are the advantages of mictrostripline matching networks?
PART B
1. The S parameters for a transistor are given below. Determine its stability and the input and
output stability circles(use smith chart) (16)
S11=0.385∠-53o S12=0.045∠90o S21=2.7∠78o S11=0.89∠-26.5o
2. A microwave transistor has the following S parameters at 10 GHz, with 50 ohm reference
impedance.
S11=0.45∠150o S12=0.01∠-10o S 21=2.05∠10o S11=0.40∠-150o
The source impedance is Zs =20 ohm and load impedance is ZL = 30 ohm.
Compute the power gain, available gain and the transducer power gain. (16)
3. Explain following
(i) Impedance matching networks
(ii) Micro strip line matching networks (16)
4. Design a matching network to match a ZL= (10+j10) ohm to a 50 ohm line. Specify the value of
L and C at frequency of 1GHz.(use smith chart) (16)
5. Design all possible configurations of discrete two element matching network that match the
source impedance ZS=(50+j50)𝜴 to the load ZL=(25-j15)𝜴.Assume the characteristic impedance
of 75𝜴 at operating frequency 2GHz.( use smith chart) (16)
6. Draw the 8dB gain circle of the transistor with following S parameters at 1 GHz. S11=0.46∠-97o
S12=0.06∠-22o S21=7.1∠112o S11=0.57∠-48o (16)

7. A MESFET operated at 5.7 GHz has the following S-parameters:

S11=0.5∠-60o S 12=0.02∠0o S21=6.5∠115o S11=0.6∠-35o
Verify the circuit, whether it is unconditionally stable or nor? (6)

8. Discuss the design procedure for T and 𝜋 matching networks. (16)

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UNIT III PASSIVE AND ACTIVE MICROWAVE DEVICES 9
Terminations, Attenuators, Phase shifters, Directional couplers, Hybrid Junctions, Power dividers,
Circulator, Isolator, Impedance matching devices: Tuning screw, Stub and quarter wave transformers.
Crystal and Schottkey diode detector and mixers, PIN diode switch, Gunn diode oscillator, IMPATT
diode oscillator and amplifier, Varactor diode, Introduction to MIC.

PART A
1. What are matched terminators?
2. What are ferrites? Why is it need in circulators?
3. What is negative resistance in Gunn diode?
4. What are the factors that reduce the efficiency of IMPATT diode?
5. Give the major disadvantages of IMPATT diodes.
6. State the transferred electron effect.
7. A directional coupler is having coupling factor of 20dB and directivity of 40dB. If the
incident power is 100mW, what is the coupled power?
8. Draw the diagram of H-plane Tee junction.
9. State Gunn effects.
10. Define directivity of a directional coupler.
11. Draw the structure of two hole directional coupler
12. List advantages of MIC’s.
13. What is the working principle of varactor diode?
14. What are composite of ferrite?
15. What is Gyrator?
16. Mention the ideal characteristics of dielectric material in MMIC.
17. What are the applications of Magic Tee?
18. Why is it difficult to manufacture large value of inductors in MIC’s?
19. Mention the ideal characteristics of Substrate material in MMIC.
20. Differentiate TED between ATTD.
21. Distinguish between monolithic and hybrid MIC’s.
PART B
1. Discuss the structure and principle of operation of
(i) Isolator (8)
(ii) Circulator(8)
2. With neat diagram, explain the working principle of Gunn diode. Mention its application.(16)
3. Draw and explain the operation of Magic Tee. Explain its application in the construction of 4 -
port circulator. (8)
4. Draw and explain the various types of attenuators and phase shifters.(16)
5. Explain the operating principle of a Gunn diode. Describe its domain formation and various
modes of operations.(16)
6. With the help of two valley, explain how negative resistance can be created in Gunn diode.
Mention its applications.(16)
7. What are the materials used for MMIC fabrication? Explain with neat diagrams the fabrication
process of MMICs.(16)
8. Draw the construction and explain the working of IMPATT diode.(16)
9. Explain how directional coupler can be used to measure reflected power. (8)
10. Explain the properties of H-plane Tee and give reasons why it is called shunt Tee. (8)
11. Derive the equation for the scattering matrix of magic Tee. (8)
12. Differentiate between circulators and isolators. (8)
13. Derive scattering matrix for E-plane Tee using S parameter theory. (8)
14. Discuss the structure and principle of operation of
(i) Directional coupler(8)

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 (ii) Magic Tee(8)
15. Determine the scattering matrix of E-plane junction Tee. (8)

UNIT IV MICROWAVE GENERATION 9

Review of conventional vacuum Triodes, Tetrodes and Pentodes, High frequency effects in vacuum
Tubes, Theory and application of Two cavity Klystron Amplifier, Reflex Klystron oscillator, Traveling
wave tube amplifier, Magnetron oscillator using Cylindrical, Linear, Coaxial Voltage tunable
Magnetrons, Backward wave Crossed field amplifier and oscillator.

PART A
1. A helix travelling wave tube operates at 4 GHz, under a beam voltage of 10kv and beams current
of 500mA. If the helix is 25 ohm and interaction length is 20cm, find the gain parameter.
2. Define: Convection current of TWT.
3. Compare O-type tube and M-type tubes.
4. Define velocity modulation
5. Distinguish between TWT and Klystron.
6. Why magnetron called a cross field devices?
7. What is meant by mode characteristics of Reflex Klystron Oscillator?
8. What is the need for helix structure in TWT?
9. What is meant by strapping?
10. List out various applications of TWT.
11. Write the assumptions to calculate the RF power using reflex Klystron oscillator.

PART B
1. Explain the operation of two cavity klystron amplifier and compare with travelling wave tube.
2. Derive the equation of velocity modulated wave and discuss the concept of bunching effect in
two cavity Klystron. (16)
3. An X band pulsed cylindrical magnetron has following operating parameters:
Anode voltage V0=26 kV
Beam current I0= 27A
Magnetic flux density B0=0.336Wb/m2
Radius of cathode cylinder a= 5cm
Radius of vane edge to center b=10cm
Determine cyclotron angular frequency, cut off voltage for a fixed B0 and cut off
magnetic flux density for a fixed V0. (16)
4. Explain the working principle of Reflex Klystron and derive the expression of bunching
parameters, power and efficiency. (16)
5. Explain the working principle of Travelling Wave Tube Amplifier (TWTA). (16)
6. Write detailed notes about cylindrical magnetron. (16)
7. (i) Draw a neat sketch showing the constructional features of a cavity magnetron and explain why
magnetron is called as cross field device.
(iii) Derive an expression for cut off magnetic field for a cylindrical magnetron.
(iv) Explain how strapping enables the separation of п mode from other modes. (16)
8. Draw and explain the working of Multi-cavity klystron. Write the Mathematical analysis of TWO
cavity klystron.(16).
9. A two cavity Klystron amplifier has the following parameters:
Beam voltage (Vdc)=900V, Beam current (I0)=30mA, frequency=8GHz, gap spacing in either
cavity (d)=1 mm. Spacing between centre of cavities (S)=4cm. Effective shunt
impedance(Rsh)=40K𝜴.
Calculate:
(i) Electron velocity

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 (ii) D.C electron time
(iii) Input voltage for maximum output voltage(16)

UNIT V MICROWAVE MEASUREMENTS 9

Measuring Instruments : Principle of operation and application of VSWR meter, Power meter, Spectrum
analyzer, Network analyzer, Measurement of Impedance, Frequency, Power, VSWR, Q-factor, Dielectric
constant, Scattering coefficients, Attenuation, S-parameters.

PART A
1. What are the errors in impedance measurement?
2. What are the errors possible in standing wave ratio measurements?
3. What is the principle by which high power measurements could be done by calorimetric method?
4. Name two methods to measure the dielectric constant of a load.
5. Define SWR.
6. What is the significance of VSWR measurements?
7. Define insertion loss.
8. Name two methods to measure impedance.
9. Name two methods to measure attenuation.
10. Calculate the SWR of a transmission system operating at 8GHz. The distance between two
minimum power points in 0.9mm on a slotted line whose velocity factor is unity?
11. Draw a setup to measure the frequency.
12. Mention two methods to measure microwave power.
13. List out any two sensors used to measure the power.
14. What does VSWR determine?
PART B
1. Explain the principle of microwave power measurements.(8)
2. Discuss slotted line method of VSWR measurements. (8)
3. Explain the procedure to measure the impedance of a load. (8)
4. With neat block diagram explain the Insertion loss and Attenuation measurements. (8)
5. Explain the measurement of load Impedance by slotted line method. (8)
6. Explain the measurement of cavity Q by slotted line method. (8)
7. Describe with neat diagram and mathematical formulation the measurement of dielectric constant
of a solid using rectangular waveguide. (8)
8. With neat diagram explain Insertion loss measurements, and Scattering Parameters.(16)

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