Hall Effect

 If a metal or a semiconductor carrying a current ‘I’ is placed in a transverse magnetic field

‘B’, a potential difference VH is produced in a direction normal to both the magnetic field
and current directions.
Expression for VH

• if a magnetic field B is applied normal to the wafer surface and hence to the direction of
current ‘I’ in it, then a transverse potential difference is produced which is known as
Hall Voltage ‘VH’.

𝐁𝐈
• 𝐕𝐇 =
𝐩𝐞𝐭
• Where, p – concentration of holes , e- charge of electron, t- thickness of
the semiconductor.
Hall Coefficient
 Hall coefficient, RH is defined as Hall field per unit current density per unit magnetic
induction.
𝑽𝑯
𝑬𝑯 𝑽𝑯
• 𝐑𝐇 = = 𝑾 = Since, J= I/A
𝑱𝑩 𝐉𝐁 𝐉𝐁𝐰
𝑽𝑯 𝑨
= Since, A= wt
𝑰𝐁𝐰
𝑽𝑯 𝒘𝒕 𝑽𝑯 𝐭 𝐁𝐈
= = • Since, 𝐕𝐇 =
𝐩𝐞𝐭
𝑰𝐁𝐰 𝑰𝐁
𝑩𝑰 𝐭
=
𝒑𝒆𝒕 𝑰𝐁
𝟏
𝑹𝑯 = 𝒑𝒆
Applications of Hall effect
 A Hall effect sensor is a transducer that produces its output voltage in response to
changes in magnetic fields.
 1. Determination of semiconductor type:
 The Hall coefficient is negative for a n-type semiconductor
 And positive for a p-type semiconductor.
 The sign of the Hall coefficient can be used to determine whether a given
semiconductor is n- or p-type.
 2. Determination of carrier concentration:
 By measuring the Hall coefficient, the carrier concentration in a semiconductor can be
determined making use of the relations
 3. Determination of carrier mobility: By measuring the Hall coefficient
and conductivity of the semiconductor, the carrier mobility can be
determined using the relation
 mh = s |RH|
 4. Measurement of magnetic fields:
 Hall voltage is proportional to the magnetic field intensity, for a given
current through the sample.
 Knowing the parameters of the Hall probe, and applied current, we can
determine the intensity of the magnetic field.
 Hall probes can be used for static as well as high-frequency magnetic
fields.
 Hall probes measure variable magnetic fields up to a frequency of 10 12
Hz.
 5. Measurement of power in an electromagnetic wave:
 In an electromagnetic wave in free space, the electric and
magnetic fields are at right angles.
 Now, if a semiconductor is kept parallel to E, it will produce a
current I in the semiconductor.
 Since the semiconductor is simultaneously subjected to a
transverse magnetic field, Hall voltage is produced across the
sample.
 The Hall voltage is proportional to the product EH which
represents power of the wave.
 Thus, Hall effect can be used to determine the flow of power of an
electromagnetic wave.
 6.Contactless Ammeter
 Current flowing through a conductor produces a magnetic field that varies with
current, and a Hall sensor can be used to measure the current without
interrupting the circuit.
 They are especially used in measuring extremely heavy currents, where
conventional ammeters cannot be used.