Professional Documents
Culture Documents
SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 82 AC 12
VCES 1200 V SKiiP 82 AC 12 I 3)
VGES ± 20 V
IC Theatsink = 25 / 80 °C 95 / 65 A
IGBT
ICM tp < 1 ms; Theatsink = 25 / 80 °C 190 / 130 A 3-phase bridge inverter
Tj – 40 . . . + 150 °C
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V
Case M8
Inverse Diode
IF = –IC Theatsink = 25 / 80 °C 80 / 53 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 160 / 106 A
IFSM tp = 10 ms; sin., Tj = 25 °C 720 A
I2t tp = 10 ms; sin., Tj = 25 °C 2600 A2 s
Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 75 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
td(on) VCC = 600 V; VGE = ± 15 V – 35 70 ns
tr IC = 75 A; Tj = 125 °C – 70 140 ns
td(off) Rgon = Rgoff = 15 Ω – 450 600 ns
tf inductive load – 70 100 ns ~
Eon + Eoff – 18 – mJ ~
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 5,0 – nF
~
Rthjh per IGBT – – 0,35 K/W
Diode 2) - Inverter
VF = VEC IF = 75 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2.3) V
UL recognized file no. E63532
VTO Tj = 125 °C – 1,0 1,2 V
rT Tj = 125 °C – 11 15 mΩ • more detailed characteristics of
IRRM IF = 75 A, VR = – 600 V – 45 – A current sensors and temperature
Qrr diF/dt = – 800 A/µs – 11 – µC sensor please refer to part A
Eoff VGE = 0 V, Tj = 125 °C – 3,0 – mJ • common characteristics see
Rthjh per diode – – 0,8 K/W page B 16 – 4
Current sensor for three phase output ac current (SKiiP 82 AC 12 I)
Ip RMS Continuous current, 1)
T = 100 °C, Vsuppl = ± 15 V – 50 – A Theatsink = 25 °C, unless
Ipmax RMS t≤ 2s – – 80 A otherwise specified
2)
CAL = Controlled Axial Lifetime
Ip peak t ≤ 10 µs – 1000 – A
Technology (soft and fast
Rout terminating resistance – 50 – Ω
recovery)
Is RMS rated sensor current 3) With integrated closed loop
at Ip = 50 ARMS 25 mA current sensors
Ip : Is transfer ratio 1 : 2000
Offset error IP = 0 A, T = – 40 ... 100 °C – ± 0,2 – mA
Linearity – 0,1 – %
delay time IP = 10 % – 80 % – <1 – µs
90 % – 20 % – <1 – µs
Bandwidth 0 – 100 (– 3dB) kHz
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2,5 – 3,5 Nm
Case mechanical outline see pages M8
B 16 – 11 and B 16 – 12
© by SEMIKRON 0698 B 16 – 65
135 135
17V 17V
120 120
15V 15V
105 105
13V 13V
90 90
11V 11V
75 75 9V
9V
60 7V 60 7V
45 45
30 30
15 15
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE [V] VCE [V]
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
82AC1203.xls 82AC1204.xls
30 24
Tj = 125 °C Tj = 125 °C
mJ VCE = 600 V mJ VCE = 600 V
25 VGE = ± 15 V VGE = ± 15 V
Eon
RG = 15 Ω 18 Eon
IC = 75 A
20
15 12
Eoff Eoff
10
6
5
E
E
0 0
0 IC 30 60 90 120 A 150 0 RG 10 20 30 Ω 40
Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
VGE [V] 82AC1205
20
ICpuls = 75 A VGE = 0 V
18 f = 1 MHz
600V
16
800V
14
12
10
0
0 120 240 360 480
QG [nC]
Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE
B 16 – 66 0698 © by SEMIKRON
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH
8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4
0,5
2
0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode
B 16 – 4 0698 © by SEMIKRON