Professional Documents
Culture Documents
MBQ50T65FDSC
650V Field Stop IGBT
Applications
PFC Welder
UPS IH Cooker
PV Inverter
TO-247
G
C
E
Maximum Rating
Parameter Symbol Rating Unit
Collector-emitter voltage VCE 650 V
TC=25°C 100 A
DC collector current, limited by Tvjmax IC
TC=100°C 50 A
Pulsed collector current, tp limited by Tjvjmax ICpuls 200 A
Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175°C - 200 A
TC=25°C 60
Diode forward current limited by Tvjmax IF A
TC=100°C 30
Diode pulsed current, tp limited by Tvjmax IFpuls 200 A
Gate-emitter voltage VGE ±20 V
TC=25°C 273 W
Power dissipation PD
TC=100°C 136 W
Short circuit withstand time
VCC ≤ 400V, VGE = 15V, Tvj = 150°C
tsc 5 μs
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
Operating Junction temperature range Tvj -40~175 °C
Storage temperature range Tstg -55~150 °C
Soldering temperature
260 °C
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
Thermal Characteristic
Parameter Symbol Rating Unit
Thermal resistance junction-to-ambient RθJA 40
Thermal resistance junction-to-case for IGBT RθJC 0.55 °C/W
Thermal resistance junction-to-case for Diode RθJC 1.2
100
11.0V
60 11.0V
80
60 40
9.0V
40 9.0V
20
20
VGE = 7V VGE = 7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
120 TJ = 175'C
3.5
Collector Current, IC [A]
100
3.0
80
2.5 50A
60
2.0
40
20A
1.5
20
0 1.0
5 6 7 8 9 10 11 12 13 14 15 25 50 75 100 125 150 175
160 1.7
TJ = 25'C 60A
140 TJ = 175'C 1.6
120 1.5
Forward Voltage, VF [V]
Forward Current, IF [A]
100 1.4
80 1.3
30A
60 1.2
40 1.1 15A
20 1.0
0 0.9
0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175
5.0
6000
Max.
4.5
Capacitance [pF]
Typ.
4.0
Min. 4000
3.5 Coes
3.0
2000
2.5 Cres
2.0
1.5 0
25 50 75 100 125 150 175 0 5 10 15 20 25 30
Junction Temperature, TJ [C] Collector-Emitter Voltage, VCE [V]
16 100
VCC = 130V VCC = 400V
14 VCC = 520V VGE = 15V
RG = 7ohm
TC = 175'C
Gate-Emitter Voltage, VGE, [V]
12 80
Switching Time [nS]
10
tr
8 60
td(on)
4 40
0 20
0 50 100 150 200 250 300 10 20 30 40 50 60 70 80
1000 4
VCC = 400V
VGE = 15V
td(off) RG = 7.9ohm
TC = 175'C
Eon
3
Switching Loss [mJ]
Switching Time [nS]
100
tf
10 Eoff
VCC = 400V 1
VGE = 15V
RG = 7ohm
TC = 175'C
1 0
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
100
tr
50 tf
40 10
0 5 10 15 20 25 0 5 10 15 20 25
3.0 100
VCC = 400V
VCC = 400V
VGE = 15V
VGE = 15V
2.5 IC = 40A
IC = 40A
TJ = 175'C RG = 7.9ohm
Ets 80
Switching Loss [mJ]
2.0
turn on [ns]
Eon td(on)
1.5 60
tr
1.0
40
Eoff
0.5
0.0 20
0 5 10 15 20 25 25 50 75 100 125 150 175
1000 2.5
VCC = 400V VCC = 400V
VGE = 15V VGE = 15V
IC = 40A IC = 40A Ets
RG = 7.9ohm RG = 7.9ohm
2.0
td(off)
Switching Loss [mJ]
Eon
1.5
turn off [ns]
100
1.0
tf
Eoff
0.5
10 0.0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Junction Temperature, T J [C] Junction Temperature, TJ [C]
Ets
140
1.0
Eon
120
100
0.5
Eoff
80
0.0 60
200 250 300 350 400 450 500 600 700 800 900 1000
3.5 50
TJ = 25'C
TJ = 25'C TJ = 175'C
Reverse Recovery Charge, Qrr [uC]
TJ = 175'C IF = 20A
3.0 IF = 20A
40
2.5
2.0 30
1.5
20
1.0
0.5 10
500 600 700 800 900 1000 500 600 700 800 900 1000
Diode Current Slope, diF/dt [A/us] Diode Current Slope, diF/dt [A/us]
800
700 10 10us
600 50us
100us
200us
500 1 500us
400
DC
300 0.1
500 600 700 800 900 1000 1 10 100 1000
Diode Current Slope, diF/dt [A] Collector-Emitter Voltage,VCE [V]
200 9
150 6
100 3
50 0
10 12 14 16 18 20 10 11 12 13 14 15
Fig.25 Typical Short Circuit Collector Current Fig.26 Typical Short Circuit Withstand Time
100 300
90
250
80
Power Dissipation, Ptot [A]
Collector Current, IC [A]
70
200
60
50 150
40
100
30
20
50
10
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
D=0.9
D=0.9
0.5 10
0
0.5
]
]
JC
JC
Thermal Response [Z ?
Thermal Response [Z ?
-1
10
0.1
0.1
0.05 -1
10
0.05
0.02
0.02
-2
10
Notes : 0.01 Notes :
0.01 Duty Factor, D=t1/t2 Duty Factor, D=t1/t2
PEAK TJ = PDM * Z? JC* R? JC(t) + TC PEAK TJ = PDM * Z? JC* R? JC(t) + TC
-2
10
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
10 1x10 1x10 10 10 10 10 10 1x10 1x10 10 10 10 10
Rectangular Pulse width [sec] Rectangular Pulse width [sec]
Fig.29 IGBT Transient Thermal Impedance Fig.30 FRD Transient Thermal Impedance
TO-247
Dimensions are in millimeters, unless otherwise specified
ΦP
E A
A2
Q
S
D1
E2
D
L1
b2
b1
L
b E1
e c A1
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.