Seat No.

: _______________

MG-124
May-2018
M.Sc., Sem.-II
409 : Physics
(Solid State Properties and Physics of Semi-conductor)
(Old)
Time : 3 Hours] [Max. Marks : 70

Instructions : (1) Attempt all questions.

(2) Symbols used have their usual meanings.

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(3) Assume data when necessary.

n
1. (A) Obtain the expression of the stabilization free energy density for the

r.i
superconducting state. 7
OR
(1) For a specimen of V3Ga, the critical fields are respectively 1.4 × 105 and
i
ls
4.2 × 105 amp/m for 14 K and 13 K. Calculate the TC and critical field at
0 K and 4.2 K.
ea

(2) The transition temperature of mercury with an average atomic mass of

200.59 a.m.u is 4.153 K. Determine the transition temperature of one of its
isotopes 80Hg204.
.R

(Hint : TC  M–1/2)
(B) Write down the London equation and show that the magnetic field decays
w

exponentially. Also, using the concept of coherence length, derive the dirty
superconductor limit. 7
w

OR
Show that the magnetic flux is quantized in unit of h/2e in superconducting ring.
w

2. (A) What is Magnetic Resonance ? Discuss in details about the Nuclear Spin
Resonance. 7
OR
Write note on : (1) Spin-Lattice relaxation (2) Spin-Spin relaxation.
(B) Discuss the Neel model of Ferrimagnetism. 7
OR
Discuss the Neel model of antiferromagnetism.

MG-124 1 P.T.O.

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3. (A) Distinguish between metal, insulators and semiconductors according to their band
diagrams. Also draw the band diagrams of n-type and p-type semiconductors. 7
OR
On what factors does the mobility of semiconductor depend ? Obtain a
relationship between conductivity and mobility for extrinsic semiconductors.
(B) Obtain an expression of density of states for a metal and extend it to find a similar
equation for a semiconductor. 7
OR
Using suitable equations, explain the process of generation and recombinations in
a p-type semiconductor.

4. (A) Obtain ideal diode equation for a p-n junction diode. 7

OR
Obtain an expression of depletion region width for an unbiased p-n junction.

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(B) Define contact potential. State the physical significance of such potential. Draw
energy band diagram when two metals are joined. 7

n
OR
Derive an equation for space charge region width when external bias is applied to

5.
a p-n junction.

Answer the following in brief :

i r.i 14
ls
(1) The vortex state is stable when the penetration of the applied field to the
superconductor material causes the surface energy to become negative. (TRUE /
ea

FALSE)
(2) Give an example of high pressure superconductor.
(3) What is the value of energy gap at critical temperature in superconductor ?
.R

(4) Which magnetic substance possesses no net magnetic moment even in the
presence of external magnetic field ?
(5) What is magnon ?
w

(6) What is closure domain ?

(7) The magnetic state of a material depends on pressure. (TRUE / FALSE)
w

(8) Give relationship between mobility and conductivity of charge carriers in

semiconductor.
w

(9) On factors does the mobility of charge carrier depend ?

(10) Give applications of Hall effect.
(11) Why the location of donor state is close to the bottom of the conduction band ?
(12) State the significance of law of mass action.
(13) State the difference between abrupt and graded p-n junction.
(14) Give the unit of contact potential.
______________
MG-124 2

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 Seat No. : _______________

MG-124
May-2018
M.Sc., Sem.-II
409 : Physics
(Solid State Properties and Physics of Semi-conductor)
(New)
Time : 3 Hours] [Max. Marks : 70
Instructions : (1) Attempt all questions.
(2) Symbols used have their usual meanings.
(3) Assume data when necessary.

fo
1. (A) Obtain the expression of the stabilization free energy density for the
superconducting state. 7

n
OR
(1) For a specimen of V3Ga, the critical fields are respectively 1.4 × 105 and

(2)
i r.i
4.2 × 105 amp/m for 14 K and 13 K. Calculate the Tc and critical field at
0 K and 4.2 K.
The transition temperature of mercury with an average atomic mass of
ls
200.59 a.m.u is 4.153 K. Determine the transition temperature of one of its
isotopes 80Hg204.
ea

(Hint : TC  M–1/2)
(B) Write down the London equation and show that the magnetic field decays
exponentially. Also, using the concept of coherence length, derive the dirty
.R

superconductor limit. 7
OR
Show that the magnetic flux is quantized in unit of h/2e in superconducting ring.
w

2. (A) What is Magnetic Resonance ? Discuss in details about the Nuclear Spin
w

Resonance. 7
OR
w

Write note on : (1) Spin-Lattice relaxation (2) Spin-Spin relaxation.

(B) Discuss the Neel model of Ferrimagnetism. 7
OR
Discuss the Neel model of antiferromagnetism.

3. (A) Using diagram, explain energy band formation in silicon. Also, draw the
schematic band diagram of direct and indirect band gap semi-conductors 7
OR

MG-124 3 P.T.O.

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 Define non-degenerate semi-conductor. Prove that for an n-type semi-conductor
the carrier concentration is given by
EF – Ei
n = niexp  kT 
 
(B) For an intrinsic semi-conductor, state and prove the law of mass action. 7
OR
Prove that for intrinsic semi-conductor, the Fermi level lies at the centre of the
energy gap.

4. (A) For an abrupt p-n junction under the no bias condition, deduce an equation for the
depletion region width. 7
OR
For an abrupt p-n junction, obtain following expression for built-in potential
kT NAND

fo
Vbi = q ln  2 
 ni 
(B) For an un-biased abrupt p-n junction, obtain an expression for the depletion layer

n
width. 7
OR

diode.
i r.i
Obtain rectifier equation and draw the I-V characteristics of an ideal p-n junction
ls
5. Answer the following in brief : 14
(1) The vortex state is stable when the penetration of the applied field to the
ea

superconductor material causes the surface energy to become negative. (TRUE /

FALSE)
(2) Give an example of high pressure superconductor.
.R

(3) What is the value of energy gap at critical temperature in superconductor ?

(4) Which magnetic substance possesses no net magnetic moment even in the
presence of external magnetic field ?
w

(5) What is magnon ?

(6) What is closure domain ?
w

(7) The magnetic state of a material depends on pressure. (TRUE / FALSE)

(8) Draw the location of Fermi level for a p-type semi-conductor kept at 20 °C and
w

100 °C.
(9) Define degenerate semi-conductors.
(10) Write the unit of Hall co-efficient RH.
(11) Why the location of acceptor state is close to the top of the valance band ?
(12) State the importance of capacitance-voltage characteristics of a p-n junction.
(13) State the difference between abrupt and graded p-n junction.
(14) Define depletion capacitance and state its unit.
_____________

MG-124 4

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