IMAPS ATW on RF and Microwave Packaging

High Frequency Packaging

and RF Devices

Dr. Mike Zimmerman and Christopher Lee

Quantum Leap Packaging, Inc

September 16, 2008

Page 1 000490
Quantum Leap Packaging, Inc.
 IMAPS ATW on RF and Microwave Packaging

Outline

ƒ Company Background
ƒ Current Packaging Material Technology
ƒ Enabling Material and Packaging Technologies
ƒ Performance & Reliability Data
ƒ Next Generation Film
ƒ Summary

Page 2 000491
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 IMAPS ATW on RF and Microwave Packaging

Company Background
ƒ Founded December 2002
ƒ Headquartered in Wilmington, Massachusetts
• 32,000 sq. ft. manufacturing facility in Wilmington, MA
• 20,000 sq. ft. manufacturing facility in Poway, CA

ƒ Venture Capital:
ƒ Strategic Investor:
ƒ Strategic Partnerships
• DuPont
• CMC Interconnect Technologies
• Customer Joint Development
ƒ Materials Company with first products in semiconductor packaging

Page 3 000492
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 IMAPS ATW on RF and Microwave Packaging

High Frequency Power Amplifiers

LDMOS Base Station Transistors

Design Trends:
ƒ Increased Power > 300 W
ƒ Higher Frequencies up to 6 GHz
ƒ Device Integration
Drive:
ƒ Greater Thermal Performance
ƒ Lower Dielectric Constant
ƒ Multi-component, multi-lead Package

ƒ Other Applications: Driving frequencies up to 100Ghz

Page 4 000493
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 IMAPS ATW on RF and Microwave Packaging

LDMOS Base Station Transistors

Current LDMOS Packaging
Package Material CTE Thermal
ƒ Ceramic Lid and Body (ppm) (Wm/K)

Body & Lid Ceramic 5.7 – 8.1 ~

ƒ Heat Sink/Flange Alloy :
• Match CTE to ceramic body CuW 6.5 – 7.2 180 - 200
CuMoCu
• Minimize stress with ceramic 5.7 – 9.5 210 – 220
Heat sink/Flange (CMC)
body and Si device
CuCuMoCu
7.2 – 9.0 220-240
(CPC)
ƒ Highly Reliable Construction
• MIL-STD-883E
• Gross Leak

ƒ Key Limitations:
• Thermal Conductivity
• Multi-lead Device Integration
• Cost
Page 5 000494
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Alternative Packaging Solutions

ƒ Organic Body
• LCP Æ anisotropic, low temp (not capable of
eutectic die attach), poor adhesion to metal
• Epoxy Æ non-linear, poor moisture resistance
• Others: PTFE, PEEK Æ Limitations on
temperature, adhesion.
ƒ Flange Materials
• Cu Æ Stress @ die level
• AlSiC, Metal Carbon Fiber composites Æ cost

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 IMAPS ATW on RF and Microwave Packaging

QLP Approach
Enabling Technologies
ƒ Material: solves limitations of previous materials
• Adhesion directly to copper
• High Temperature, > 400oC die attach
• Isotropic properties
ƒ Copper Technology
• High Thermal conductivity
• Manages stresses between Si-Cu
• Flatness control
ƒ Full Body package
• Injection molded
• Leads/flange molded in simultaneously
• Eliminates Assembly Steps & Improves
Flatness
ƒ Lid
• B-stage epoxy (provided as drop-in) Standard Lid Seal U/S Lid Seal
• Gross Leak
• Improved ÆUltrasonic welding
• Fine Leak
Page 7 000496
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Extension to Multiple Leaded

Packages– Enables Integration

Multi-Lead QFN

Page 8 000497
Quantum Leap Packaging, Inc.
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QuantechTM Material Technology

New Molecular Structure: z

ƒ Isotropic Properties
ƒ High Temperature Stability (500°C) x

ƒ Ability to Manipulate Material Properties y

• Control of Mechanical Properties, CTE
• Tailored Electrical Properties
ƒ Excellent Adhesion to Metal Leadframes and Flanges
ƒ Outstanding Moisture Resistance
ƒ Injection moldable and Extruedable

Page 9 000498
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 IMAPS ATW on RF and Microwave Packaging

Linear and Low CTE

matching Cu
• Traditional LCPs are Anisotropic
• CTE MD~8 ppm/oC, CTE TD >80 ppm/oC
• ”Direction
Flow 6.00E-03
Cross-Flow Direction
6.00E-03

5.00E-03 5.00E-03

4.00E-03 4.00E-03

3.00E-03 3.00E-03

< 20 x10-6/°C < 20 x10-6 /°C

Corrected Expansion

Corrected Expansion
2.00E-03 2.00E-03

1.00E-03 1.00E-03

0.00E+00 0.00E+00
-40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120
-1.00E-03 -1.00E-03

-2.00E-03 -2.00E-03

-3.00E-03 -3.00E-03

-4.00E-03 -4.00E-03

-5.00E-03 -5.00E-03
Temperature (°C) Temperature (°C)

-30 to 30 -30-100 Pts -30 to 30 -30-100 Pts

CLTE 1.07E-05 1.21E-05 1.19E-05 CLTE 1.09E-05 1.35E-05 1.36E-05

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 QuantechTM Material
IMAPS ATW on RF and Microwave Packaging

Permeability

Permeability Comparable to Glass

Permeability of
QuantechTM

Page 11 000500
Quantum Leap Packaging, Inc.
 IMAPS ATW on RF and Microwave Packaging

High Temperature Stability

AuSi Die Attach 430oC

TGA
Stability to 500°C

DMA (-200°C – 500°C)

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Enabling Technology:
QuantechTM Adhesion

Adhesion to Metal Adhesion to Glass

QuantechTM

glass

QuantechTM QuantechTM QuantechTM

Cohesive attachment of LCP—

Copper
Traditional LCPs don’t bond to metals

Page 13 000502
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Reliability Lead Pull Tests

RF Power Amplifier
Instron Testing

ƒ Withstand 100 lb RF
Test Fixture
ƒ Withstand assembly
loads
ƒ Lead Deflection testing
ƒ Bolt Down
ƒ MSL1 –for lead free
solder

Page 14 000503
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Reliability
Lead pull force and Comparison
Material Max pull Visual
NO Cu to LCP adhesion load
Generic 32 lbs No LCP to Cu
LCP adhesion
Quantech 100 lbs Excellent LCP to
Cu adhesion
Commercial LCP
No Degradation after aging (1000 L-L cycles)

T=0

T = 1000
Cycles
Cohesive Quantech LCP Cu bond

Page 15 000504
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Enabling Interface Technology

Hermeticity – Enables Multi-leads
Traditional LCP Issues:
QLP QuantechTM Package
Adhesion and Hermetic Properties

Top View

No dye leakage @ Interface

Bottom View

No Leakage @ Lead Interface

Page 16 000505
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QuantechTM LDMOS Package

Enabling Technology: Copper Flange
Package Material CTE Thermal
ƒ Organic Lid and Body (ppm) (Wm/K)
• QuantechTM Matched CTE
to Cu Body & Lid QuantechTM 15 - 17 ~

ƒ Cu Heat Sink/Flange Heat

Cu 17 360 - 390
sink/Flange
• Higher Thermal
Conductivity
• Proprietary Low Stress 400

Layer to manage Si-Cu 350

Thermal Cond. (Wm/K) 300 >70% Thermal Improvement

stress 250

ƒ Robust & Reliable 200

Construction 150

100
• MIL-STD-883E 50

• Gross Leak & Fine Leak 0

CuW CMC CPC Cu

Flange Material

Page 17 000506
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Managing Cu-Si Stress

QLP Proprietary Cu Technology
Hard Solder D/A
ƒ Si-Cu CTE Mismatch Si Device = 2.8ppm/°C
• Si Device = 2.8 ppm/°C
• Cu = 17 ppm/°C
Cu Flange + Low Stress Layer
ƒ Die Crack and Failure 17 ppm/°C
ƒ Poor Reliability Performance

ÎQLP “Low Stress” Cu Flange Technology

• Manages stresses
• Maintains flange convexity
• Enables Higher Thermal Conductivity
• Maintains Long Term Reliability

Page 18 000507
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 IMAPS ATW on RF and Microwave Packaging

Flange Flatness
Customer Data
ƒ 15 points measured across back side of flange
1 2 3 4 5
6 7 8
9 1 1 1 1
0 1 2 3

ƒ Positive flatness values indicate convex part

ƒ Summary of Flatness Measurements
Î Little change through processing
Top of flange
Î Final flatness - favors bolt down and good
contact between heat sink and board

Before die After ceramic After LCP lid

attach After die attach lid attach attach
Center 1.6 1.5 0.6 1.0
Left ear -0.5 -0.6 -1.0 -0.9
Right ear -0.7 -0.8 -1.1 -0.9
Page 19 000508
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Reliability
Military Power Package
Customer A
Total Parts 49

Initial Gross Leak Test 49/49 Pass

MIL-STD-883E
Initial Fine Leak Test (<5 x 10-8 atm cc/s) 47/47Pass*
1014.9
500 Temp Cycles (-40°C to +125°C) 45/45 Pass*

1000 Temp Cycles (-40°C to +125°C) 21/21 Pass

Customer B
Initial Gross Leak Test 40/40 Pass
MIL-STD-883E
Initial Fine Leak Rate 40/40
He Fine Leak Test by QLP
Test (<1 x 10-9 cc-atm/sec) and Customer
Radioisotope Krypton 85
250 Temp Cycles 5 pcs.
method by customer
-11
(-50°to +150°C) (1 x 10 cc-atm/sec)

MIL-STD-883E
500 Temp Cycles 5 pcs
He Leak Test by customer
(-50°to +150°C) (<5 x 10-8cc-atm/sec)

MIL-STD-883E
PIND Test 10/10 Pass
Customer
Page 20 000509
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Package Performance
QuantechTM Cu Flange Technology

ƒ 12°C Lower Junction

Temperature vs CuW Flange

ƒ Each °C improvement ≈ 1 year

longer life

ƒ 3 – 5% Efficiency Improvement
over CuMoCu
• Improved Reliability and Longer Life
• Lower Current Draw
• Greater Device Performance

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QLP Multilayer Roadmap

ƒ Lead frame design limitations for
High Frequency

ƒ Higher frequency and other

applications require multi-layer
technology
ÎQLP materials development for multilayer
organic packages.
; 100 GHz applications
; Low Dielectric Constant
; High Adhesion
; High Temp Stability
; Isotropic & Tailored CTE

Page 22 000511
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 IMAPS ATW on RF and Microwave Packaging

High Frequency Films

Specifications

Dielectric Film Properties Target Specifications

Moisture Absorption (% 1 hr, 100oC) < .05%
DK> 10 Ghz 3.2
Df > 1 Ghz .002
Flammability Rating ( bromine/Halogen free) UL 94 V-0
Film and sheet thickness 50 ~ 500um (2 ~ 20 mils)
Film Thickness Tolerance +/- 5%

CTE (X,Y) Adjustable 10- 40 ppm/oC

CTE (Z) < 40 ppm/oC
Film HDT 320oC
Thermal Stability Lead Free solder
Copper Peel Strength > 5 lb/inch

Page 23 000512
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 IMAPS ATW on RF and Microwave Packaging

QLP Multilayer
Roadmap

.002” Dielectric

½ oz Cu
Multiple layer QLP
substrate
Page 24 000513
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Summary

ƒ QLP Materials and Process technology enables

new generation of air cavity organic packages
• Proven higher performance
• Improved ownership costs
• Matched reliability
ƒ QLP’s Roadmap targets multilayer technology and
addresses high frequency applications

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