MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FH-56
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE

FD1000FH-56 OUTLINE DRAWING Dimensions in mm

R4
9

5
15°
‘38

0.4 MIN
φ 50
CATHODE

21 ± 0.5
TYPE

0.4 MIN
NAME φ 50
● IF(AV) Average forward current ......................1000A
ANODE φ 92 MAX
● VRRM Repetitive peak reverse voltage ....... 2500V, 2800V
M5 × 0.8
● QRR Reverse recovery charge ................. 1000µC DEPTH 2.5

● Press pack type

APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
50 56
VRRM Repetitive peak reverse voltage 2500 2800 V
VRSM Non-repetitive peak reverse voltage 2800 3100 V
VR(DC) DC reverse voltage 2000 2240 V

Symbol Parameter Conditions Ratings Unit

IF(RMS) RMS forward current 1570 A
IF(AV) Average forward current f = 60Hz, sine wave θ = 180°, Tf = 79°C 1000 A
IFSM Surge forward current One half cycle at 60Hz, non-repetitive 25 kA
I2t Current-squared, time integration One cycle at 60Hz 2.6 × 105 A 2s
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +150 °C
— Mounting force required Recommended value 29.4 26.5 ~ 35.3 kN
— Weight Standard value g

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min Typ Max
IRRM Repetitive peak reverse current Tj = 125°C, VRRM Applied — — 80 mA
VFM Forward voltage Tj = 125°C, IFM = 2500A, Instantaneous measurement — — 1.9 V
IFM = 1000A, diF/dt = –30A/µs, VR = 150V,
QRR Reverse recovery charge — — 1000 µC
Tj = 125°C
Rth(j-f) Thermal resistance Junction to fin — — 0.025 °C/W

Aug.1998
 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FH-56
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE

PERFORMANCE CURVES

MAXIMUM FORWARD CHARACTERISTICS RATED SURGE FORWARD CURRENT

104 25
7

SURGE FORWARD CURRENT (kA)

5
FORWARD CURRENT (A)

3 Tj = 125°C 20
2
103
7 Tj = 25°C
15
5
3
2
10
102
7
5
5
3
2
101 0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 1 2 3 5 7 10 20 30 50 70100

FORWARD VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN) MAXIMUM POWER DISSIPATION
CHARACTERISTICS
100 2 3 5 7 101
0.032 3200
RESISTIVE, INDUCTIVE LOAD
THERMAL IMPEDANCE (°C/W)

0.028 2800
POWER DISSIPATION (W)

DC CIRCUIT
SINGLE-PHASE
0.024 2400 HALF WAVE, FULL WAVE
RECTIFICATION CIRCUIT
0.020 2000
THREE-PHASE
0.016 1600 HALF WAVE,
FULL WAVE
0.012 1200 RECTIFICATION
CIRCUIT
0.008 800

0.004 400

0 0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 0 400 800 1200 1600

TIME (S) AVERAGE FORWARD CURRENT (A)

REVERSE RECOVERY CHARGE,

ALLOWABLE FIN TEMPERATURE REVERSE RECOVERY TIME VS.
VS. AVERAGE FORWARD CURRENT JUNCTION TEMPERATURE
130 103
REVERSE RECOVERY CHARGE (µC),

RESISTIVE, INDUCTIVE LOAD 7 QRR

REVERSE RECOVERY TIME (µS)

5 MAX.
120 SINGLE-PHASE
3 AV.
FIN TEMPERATURE (°C)

HALF WAVE, FULL WAVE

110 RECTIFICATION CIRCUIT 2 IFM diF/dt
+
VAK • iA

102 trr
100 7 0 t
5 VRM
DC CIRCUIT –
90 3 Irm
THREE-PHASE 2 QRR = trr✕Irm
trr 2
80 HALF WAVE,
FULL WAVE
101
7 MAX.
70 RECTIFICATION 5
CIRCUIT
3 IFM = 1000A AV.
60 2 diF/dt = –30A/µs
VRM = 150V
50 100
0 400 800 1200 1600 0 20 40 60 80 100 120 140 160

AVERAGE FORWARD CURRENT (A) JUNCTION TEMPERATURE (°C)

Aug.1998
 MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES

FD1000FH-56
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE

REVERSE RECOVERY CHARGE, REVERSE RECOVERY CHARGE,

REVERSE RECOVERY TIME VS. REVERSE RECOVERY TIME VS. RATE
FORWARD CURRENT OF DECREASE OF REVERSE CURRENT
104 104
REVERSE RECOVERY CHARGE (µC),

REVERSE RECOVERY CHARGE (µC),

IFM diF/dt diF/dt = –30A/µs IFM diF/dt
7 7 MAX.
REVERSE RECOVERY TIME (µS)

REVERSE RECOVERY TIME (µS)

+ + trr

VAK • iA
5 trr VRM = 150V 5
VAK • iA

0 t Tj = 125°C 0 t
3 VRM 3 VRM AV.
2 – 2 Irm
–
Irm
103 QRR = trr✕Irm 103 QRR = trr✕Irm
7 2 7 2
QRR
5 5 QRR
3 MAX. MAX.
AV. trr 2 trr
AV.
101 101
7 7
5 MAX. 5
3 AV. 3 IFM = 1000A
2 2 VRM = 150V
Tj = 125°C
100 100
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

FORWARD CURRENT (A) RATE OF DECREASE OF REVERSE CURRENT (A /µS)

Aug.1998