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MSE 210: Microstructural Engineering

Jan 2023 4 Credits


Lecture: 3 h
Lab: 1.5 h

Prafull Pandey
Department of Materials Engineering
Indian Institute of Technology, Gandhinagar

Lecture 3
FOREWORD: Review of structures and defects
Cross slip of screw dislocation
Slip plane 2

Slip plane 1

𝑡Ƹ
Screw dislocation

• Screw dislocation can move on any plane as 𝒕ො || 𝒃 −


𝐒𝐜𝐫𝐞𝐰 𝐝𝐢𝐬𝐥𝐜𝐨𝐚𝐭𝐢𝐨𝐧 𝐜𝐡𝐚𝐧𝐠𝐞𝐬 𝐭𝐡𝐞 𝐠𝐢𝐥𝐝𝐞 𝐩𝐥𝐚𝐧𝐞 𝐯𝐢𝐚 𝐜𝐫𝐨𝐬𝐬 𝐬𝐥𝐢𝐩- Conservative
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Climb of edge dislocation
• Edge dislocation changes the slip plane via a climb process- Nonconservative

Positive climb/climb up Negative climb/climb down


Removal of row of atoms Addition of row of atoms
Decrease of vacancy concentration Increase of vacancy concentration

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2D or Surface defects
Surface/interface

Homophase (Same phase) Heterophase (different phase)

Free surface Solid/Liquid Interphase interface


Twin boundary Grain boundary Stacking fault (Solid/gas) (Solid 1/Solid 2)
(Reflection) (Rotation) (Translation)

Low angle High angle Tilt Twist


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Surface defect: Stacking faults
• Faults in the stacking sequence of a crystal

Stacking of an fcc lattice {111} Intrinsic stacking fault Extrinsic stacking fault
C A B
B C A
A B C
C A 4 layers of Extra A layer A 3 layers twin
Missing c layer
B B hcp sequence B
A A A
C C C
B B B
A A A

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Dislocations and stacking sequence in FCC

A B

C B B
C
B
A A
A A 𝒂
< 𝟏𝟏𝟎 >
𝒂 𝟐
< 𝟏𝟏𝟎 >
𝟐 A→B
𝒂
< 𝟏𝟏𝟎 > ABCABCABC… stacking sequence B→C
𝟐
C→A

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Creation of stacking faults in FCC

Stacking of an fcc lattice {111}


C A B
B C A
A B C
C A A
B B B
A A
Extra A layer
A
Missing c layer
C C C
B B B
A A A
Intrinsic stacking fault Extrinsic stacking fault

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Stacking fault energy and separation of partials

d
Attractive force
(SFE)

Repulsive force
(partials) 𝑏𝑝2 > 𝑏𝑙2 + 𝑏𝑡2

𝐺 (𝑏𝑙 . 𝑏𝑡 )
𝑑=
2𝜋𝛾𝑆𝐹𝐸

𝜸𝑺𝑭𝑬 is higher d is smaller


𝜸𝑺𝑭𝑬 is lower d is higher

The dissociation of a perfect dislocation into two partials (Shockley) results in the creation of a stacking fault.
The increase in energy due to stacking fault: stacking fault energy (𝛾𝑆𝐹𝐸 )

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Effect of SFE on deformation mode

Low SFE High SFE

No cross slip -Planar slip Easy cross slip -Wavy slip

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Twinning

Mirror plane
(Twin plane)

• Twinning results in a change in shape and orientation


without changing the crystal structure

• Low temperature
• Movement of all atoms in a disciplined way

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Twinning
C
B
Stacking of an fcc lattice {111} A
C A B C
B C A B
A B C C
4 layers
C A A A twin
B B B B
A A
Extra A layer
A A
Missing c layer
C C C C
B B B B
A A A A
Intrinsic stacking fault Extrinsic stacking fault Twin

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Twin boundaries

Twin boundaries

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Grain boundaries
What is the difference between single crystal and polycrystalline material?
• Most crystalline solids are composed of a collection of many small crystals or grains, such materials are termed
Polycrystalline

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Materials science and Engineering:, Callister
Surface defect: Grain boundaries

Inverse pole figure map

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Surface defect: Grain boundaries

A region of high energy

• A region of disrupted long-range crystalline order


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Surface defect: Grain boundaries

 - Misorientation angle


•  < 15 - Low angle grain boundary
•  > 15 - High angle grain boundary

110
110
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Surface defect: Grain boundaries

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