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ECE 612

Design of Digital Integrated Circuits


Spring 2014

Lecture 1
Introduction

S. A. Ibrahim
Ain Shams University
ICL
Course Administration
 Instructor: Dr. Sameh Assem Ibrahim – IC Lab, Third floor, Room 313
 e-mail address: sameh.ibrahim@eng.asu.edu.eg
 Website: http://sites.google.com/site/asuece612s14
 Time & Place: Sat. 4:00 – 7:00 PM (Weekly), Rm. 319
 Reference Material:
 J.M. Rabaey et al., Digital Integrated Circuits: A Design Perspective, 2nd
Edition, Prentice Hall, 2003.
 N. Weste and D. Harris, CMOS VLSI Design: A Circuits and Systems
Perspective, 4th Edition, Addison-Wesley, 2010.
 Notes: collated from a lot of people including Jan Rabaey, Ananda
Chandrakasan, Neil Weste, Elad Alon, Ken Yang, Sudhakar Pamarti, Victor
Rivera, and Dejan Markovic.
 Selected papers
 Grading:
 Design Project (VHDL or Verilog) 30%
 Assignments (2 Cadence Assignments) 20%
 Final 50%
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What is the Class About?

 Integrated digital circuit design (Custom Digital)


 Transistor-level design

 Understand digital circuit behavior


 Power, area, delay, cost trade-offs

 Modern microprocessor design techniques


 Building blocks
 Design trade-off methodologies

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Detailed Course Contents

 The CMOS Inverter


 Static Combinational Logic
 Dynamic Combinational Logic
 Sequential Logic
 Semiconductor Memories
 Arithmetic Building Blocks
 Finite State Machines and controllers
 Interconnects
 Timing and clocking

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Lecture Outline

 History of ICs
 Transistors
 ICs
 Processors
 How and why we went through this path?
 What next?

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History of ICs – 1928

 The first patents for the


transistor principle were
registered in Germany by
Julius Edgar Lilienfield.
 He proposed the basic

principle behind the MOS


field-effect transistor

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History of ICs – 1936

 Mervin Kelly, Bell Lab's


director of research, felt
that to provide the best
phone service it will need
a better amplifier and
that the answer might lie
in semiconductors.
 He formed a department
dedicated to solid state
science.

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History of ICs – 1945

 Bill Shockley the team leader


of the solid state department
(Bell Labs) hired Walter
Brattain and John Bardeen.
 He designed the first
semiconductor amplifier,
relying on the field effect.
 His device was a small
cylinder coated thinly with
silicon, mounted close to a
small, metal plate.
 The device didn't work, and
Shockley assigned Bardeen
and Brattain to find out why.

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History of ICs – 1947

 Bardeen and Brattain built the point contact


transistor.
 They made it from strips of gold foil on a
plastic triangle, pushed down into contact
with slab of germanium.

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History of ICs – 1947 (Cont.)

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History of ICs – 1947 (Cont.)

 Shockley made the


Junction transistor
(sandwich).
 This transistor was
more practical and
easier to fabricate.
 The Junction Transistor
became the central
device of the electronic
age.

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History of ICs – 1948

 Bells Labs unveiled the transistor.


 They decided to name it transistor instead of Point-
contact solid state amplifier.
 John Pierce invented the name, combining
transresistance with the ending common to devices,
like varistor and thermistor.

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History of ICs – 1950’s

 Sony received a license


from Bell Labs to build
transistors.
 In 1946 Sony produced
products for radio repair. In
1950 they decided to build
something for the mass
consumption; the transistor
radio.
 In United States they used
the transistors primarily for
computers and military
uses.
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History of ICs – 1955

 Foundation of Shockley Semiconductor, sowing the


seeds of silicon valley

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History of ICs – 1957

 The traitorous eight abandoned Shockley founding


Fairchild Semiconductor.

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History of ICs – 1958
 Jack Kilby of Texas Instruments invented the Integrated
Circuit (IC)
 It occurred to him that all parts of a circuit could be made
out of the same piece of silicon.
 The entire circuit could be built out of a single crystal
• Reducing the size
• Easier to produce

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History of ICs – 1958 (Cont.)

 An IC is a single
device that contains
an interconnected
array of elements like
transistors, resistors,
capacitors, and
electrical circuits
contained in a silicon
wafer.

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History of ICs – 1968

 Bob Noyce and Gordon Moore, two of the traitorous


eight together with Andy Grove, form Intel Corporation

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Intel Processors (1971 – 1995)

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Intel Processors (1997 – 2012)

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Core i7 Haswell Architecture

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Moore’s Law
 It’s an observation made by Gordon E. Moore, in which
he predicted that the number of transistors, inside an
Integrated Circuit, could be doubled every 24 months.

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Technology Roadmap 2012 (ITRS)
Year 2011 2013 2015 2017 2019 2021 2023 2025

DRAM ½ pitch [nm] 36 28 23 17.9 14.2 11.3 8.9 7.1

Transistor density logic [Mtransistors/cm2] 798 1,596 2,534 4,022 6,385 10,136 16,090 25,541

Maximum wiring levels 12 13 13 14 14 15 15 16

High-perf. phys. gate [nm] 24 20 17 14 11.7 9.7 8.1 6.6

High-perf. VDD [V] 0.9 0.85 0.8 0.75 0.71 0.66 0.62 0.59

Local clock [GHz] 3.744 4.05 4.38 4.737 5.124 5.542 5.994 6.483

High-perf. power [W] 161 149 143 130 133 130

Low-power phys. gate [nm] 26 21 17.6 14.5 11.9 9.8 8.1 6.5

Low-power VDD [V] 0.72 0.67 0.63 0.59 0.55 0.51 0.48 0.44

Low-power power [W] 3 3 3 3 3 3 3 3

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Scaling

 Technology shrinks by 0.7/generation.


 With every generation, we can integrate 2x more functions per chip; chip cost does not
increase significantly.
 Cost of a function decreases by 2x.
 But …
 How to design chips with more and more functions?
 Design engineering population does not double every two years.
 Hence, a need for more efficient design methods
 Exploit different levels of abstraction
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Challenges in Digital Design
 Microscopic Issues
 Ultra-high-speed design
 Interconnects
 Noise, crosstalk
 Reliability, manufacturability
 Power dissipation Performance
 Clock distribution
 Macroscopic Issues Design time
Robustness
and resources
 Complexity
 Time-to-market
Area Power
 Millions of gates
 High-level abstraction
 Reuse and IP portability
Bottom Line is $$$
 predictability

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Design Abstraction Levels

Project

Course
Assignments
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Why Custom Digital?

 Someone has to design and implement the libraries.


 Creating an adequate model of a cell or module requires an
in-depth understanding of its internal operation.
 The library-based approach works fine only when the
design constraints (speed, cost or power) are not stringent.
 Abstraction-based approach is only correct to a certain
degree and becomes worse with scaling. (ex: parasitics)
 Increasing the size of a digital design has a profound effect
on global signals like supply and clock.
 Another impact of technology evolution is that new design
issues and constraints tend to emerge over time.(ex: new
power constraints)
 Troubleshooting a design requires circuit expertise.
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Example 1
 Problem: Active power increase in microprocessors
 Solution 1: Dynamic voltage-frequency scaling (DVS)

[Burd, JSSC00]
• Feedback loop sets VDD such that FERR=0.
• Ring oscillator delay-matched to CPU critical paths.
• Custom loop implementation → Can optimize CDD.
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Example 1 Continued
 Sizing has major impact for small delay increments.
 Supply reduction has more impact for large delay
increment.
 Using multiple-supplies is marginally better.
 Combined gives the best of both worlds.
 5% delay improvement can lead to 30+% power
reduction

[Stojanovic, ESSCIRC02]

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Example 2
 Problem: Increased leakage power
 Solution 1: Power down dynamically.

[Tschanz, ISSCC2003]

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Example 2 Continued
 Solution 2: Circuit-Level Approaches
 Transistor-level optimization
 Multi-Vth designs
 Increasing length
 Stacking of devices

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Example 3
 Problem: Device performance limitations due to scaling
 Solution: New Structures/Materials/Devices
 Channel engineering
• Material
• Profile
 New devices

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Reading
 Chapter 1 of Rabaey.
 Burd et al., “A dynamic voltage scaled microprocessor System”,
IEEE Journal of Solid-State Circuits, vol. 35, no.11, pp. 1571-1580,
Nov. 2000.
 V. Stojanovic et al., “Energy-Delay Tradeoffs in Combinational
Logic using Gate Sizing and Supply Voltage Optimization”,
Proceedings of the 28th European Solid-State Circuits
Conference, 2002. (ESSCIRC 2002), Sep. 2002.
 J. Tschanz et al., “Dynamic-Sleep Transistor and Body Bias for
Active Leakage Power Control of Microprocessors”, ISSCC Digest
of Technical Papers, 2003.

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