Unit1 Analysis of BJT Amplifiers

UNIT-I ANALYSIS OF BJT AMPLIFIERS
Biasing Circuits for BJTs

Biasing refers to providing appropriate DC voltage and DC current to an electronics device to
operate it in a desired way.
A BJT is biased:
i) To operate the BJT in active region so that it can be used as amplifier.

ii) To maintain Ic stable so that the operating point does not drift and thermal run away
does not happen.
Important basic relationship:
Operating Point:
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Types of Biasing:
1. Fixed Bias or Base Bias Circuit
The circuit shown is called as a “fixed base bias circuit”, because the transistors base
current, IB remains constant for given values of Vcc, and therefore the transistors operating point
must also remain fixed. This two resistor biasing network is used to establish the initial operating
region of the transistor using a fixed current bias.
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B.E loop analysis:
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CE loop Analysis:
Applying KVL to the CE loop
-VCC+ICRC+VCE=0
VCE=VCC-ICRC
w.k.t IC=βIB
Substitute IB in IC
Load line Analysis of the Fixed bias circuit:
 A fixed bias circuit with given values of VCC,RC and RB can be analyzed ( means,
determining the values of IBQ, ICQ and VCEQ) using the concept of load line also.
 Here the input loop KVL equation is not used for the purpose of analysis, instead, the
output characteristics of the transistor used in the given circuit and output loop KVL
equation are made use of.
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Problems:
1.Determine the following for the fixed bias circuit as shown in Fig1(***) or it may ask as,
Determine the Q-factors of the fixed bias.
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2. Emitter Bias or Self bias circuit:
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3. DC bias with voltage feedback or voltage feedback bias or voltage feedback circuit
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4. Voltage divider bias or Universal bias

It can be analysied in 2 methods
 Exact analysis
 Approximate analysis
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Approximate analysis:
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Stability of operating point:

Operating point or Q-point: It is the point at which transistor is baised. It is determined on DC
load line.
The process of making the operating point independent of temperature changes or variations in
transistor parameters is known as Stabilization.
SELECTION OF OPERATING POINT:
The operating point can be selected at three different positions on the DC load line:
 Near saturation region
 Near cut-off region
 At the centre i.e., Active region
Case (1): NEAR SATURATION REGION: If the biasing circuit is designed to fix the Q – point (P) very
near to saturation region, the collector current is clipped at the positive half cycle. Thus because of the
distortions present at the collector current, point P is not the suitable operating point.
Case(ii): NEAR CUT-OFF REGION: If the biasing circuit is designed to fix the Q – point (R) near cut-
off region, the collector current is clipped at the negative half cycle. Thus Q-point R is also not a suitable
operating point.
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Case(iii): AT ACTIVE REGION: If the Q – point is fixed at the centre of the active region, the output
signal is sinusoidal waveform without any distortion. Thus the point Q is the best operating point.
STABILITY FACTORS:
It is understood that IC should be kept constant in spite of variations of ICBO or ICO. The
extent to which a biasing circuit is successful in maintaining this is measured
by Stability factor. It denoted by S.
By definition, the rate of change of collector current IC with respect to the collector
leakage current ICO at constant β and IB is called Stability factor.
Note:
 Ideally, stability factor should be perfectly zero to keep the operating point stable.
 Practically stability factor should have the value as minimum as possible.
EXPRESSION FOR STABILITY FACTOR S:
For a common emitter configuration collector current is given by
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Factors affecting the operating point: (****)
The main factor that affect the operating point is the temperature. The operating point shifts due
to change in temperature.
As temperature increases, the values of ICE, β, VBE gets affected.
 ICBO gets doubled (for every 10o rise)

 VBE decreases by 2.5mv (for every 1o rise)
So the main problem which affects the operating point is temperature. Hence operating point
should be made independent of the temperature so as to achieve stability. To achieve this,
biasing circuits are introduced.
h-Parameter model of small signal:
Hybrid parameters (also known as h parameters) are known as ‘hybrid’ parameters as they
use voltage ratio, and current ratios to represent the relationship between voltage and current in
a two port network.
A transistor can be treated as a two port network. The terminal behavior of any two part
network can be specified by the terminal voltages V1 & V2 at parts 1 & 2 respectively and
current i1 and i2, entering parts 1 & 2, respectively, as shown in figure (a).
Fig (a): Two port network

If the input current i1 and output Voltage V2 are takes as independent variables, the input
voltage V1 and output current i2 can be written as
V1 = h11 i1 + h12 V2
I2 = h21 i1 + h22 V2
The four hybrid parameters h11, h12, h21 and h22 are defined as follows.
h11 = [V1 / i1] with V2 = 0 = Input Impedance with output port short circuited.
h22 = [i2 / V2] with i1 = 0 = Output admittance with input port open circuited.
h12 = [V1 / V2] with i1 = 0 = reverse voltage transfer ratio with input port open circuited.
h21 = [i2 / i1] with V2 = 0 = Forward current gain with output port short circuited.
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The following points are worth noting while considering the behaviour of transistor in terms of h
parameters :
(i) For small a.c. signals, a transistor behaves as a linear circuit. Therefore, its a.c. operation can be
described in terms of h parameters.
(ii) The value of h parameters of a transistor will depend upon the transistor connection (i.e. CB, CE
or CC) used. For instance, a transistor used in CB arrangement may have h11 = 20 Ω. If we use
the same transistor in CE arrangement, h11 will have a different value. Same is the case with
other h parameters.
(iii) The expressions for input impedance, voltage gain etc. are also applicable to transistor amplifier
except that rL is the a.c. load seen by the transistor i.e.
(iv) The values of h parameters depend upon the operating point. If the operating point is changed,
parameter values are also changed.
(v) The notations v1, i1, v2 and i2 are used for general circuit analysis. In a transistor amplifier, we
use the notation depending upon the configuration in which transistor is used. Thus for CE
arrangement,
v1 = Vbe ; i1 = Ib ; v2 = Vce ; i2 = Ic
Here Vbe, Ib, Vce and Ic are the R.M.S. values.
Circuit Performance in h Parameters:

The expressions for input impedance, voltage gain etc. in terms of h parameters for general circuit
analysis apply equally for transistor analysis. However, it is profitable to rewrite them in standard
transistor h parameter nomenclature.
Similarly, expressions for input impedance in CB and CC arrangements can be written. It may be noted
that rL is the a.c. load seen by the transistor.
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H – parameters equivalent circuit for CE configuration: (***)
To see how we can derive a hybrid model for a transistor, let us consider the common emitter
configuration as shown in the above figure.. The variables Ib, Ic, Vb and Vc represent total
instantaneous currents and voltages.
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Ib = input current
Ic = output current
Vbe = input voltage
Vce = output voltage.
The following figure shows the h-parameter equivalent circuit for the common emitter
configuration.
From the h-parameter equivalent circuit of the common emitter configuration we can write,
The quantities ∆VBE (Vbe), ∆VCE (Vce), ∆IB (Ib) and ∆IC (Ic) represent the small change in base
and collector voltages and currents.
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H-parameters for all three configurations
As mentioned earlier, transistor can be represented as a two port network by making any one
terminal common between input and output. Since there are three possible configurations in
which a transistor can be used, there is a change in terminal voltage and current for different
transistor configurations. For different configurations the relation between input parameters and
output parameters also differs. Therefore, one needs to define different set of h-parameters for
different configurations. To designate the type of configuration another subscript is added to the
h-parameters.
For example :
hie = h11e = input resistance in common emitter configuration.
hfb = h21b = short-circuit current gain in common base configuration.
The following table summarizes the h-parameters for all the three configurations.
Low Frequency BJT Amplifiers:

RC coupled Amplifiers:
Coupling Capacitors
– To couple the various stages of a multi-stage amplifier
• For AC performance essentially a short circuit and AC current flows from one stage to the next
stage
– To support the biasing of each stage individually:
• For DC performance: open circuit and no biasing current flows from one stage to another
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ByPass Capacitors
– To support the addition of a resistor for biasing purposes only
• For DC performance: open circuit and current flows through the biasing resistor
– Short-circuit the biasing resistor for AC performance.
• For AC performance: short circuit and no current flows through the resistor (shorted
out/bypassed)
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Bypass Capacitors
• The value of a bypass capacitor is chosen to provide a short circuit at a frequency sufficiently
low than the band pass of amplifier design
• For a emitter follower, it can be shown f1=1/(2π R’E CE ) where R’E is the equivalent
resistance reflected into the emitter circuit
Analysis of BJT amplifiers in CE, CB & CC Modes:
CB Amplifier:
The amplifier circuit that is formed using a CB configured transistor combination is called as
CB amplifier.
Construction:
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The common base amplifier circuit using NPN transistor is as shown below, the input signal
being applied at emitter base junction and the output signal being taken from collector base
junction.
Operation:
When no input is applied, the quiescent conditions are formed and no output is present. As
Vbe is at negative with respect to ground, the forward bias is decreased, for the positive half of
the input signal. As a result of this, the base current IB also gets decreased.
The below figure shows the CB amplifier with self-bias circuit.
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CE Amplifier:
The amplifier circuit that is formed using a CE configured transistor combination is called as
CE amplifier.
Construction:
The common emitter amplifier circuit using NPN transistor is as shown below, the input signal
being applied at emitter base junction and the output signal being taken from collector base
junction.
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CC Amplifier:
The amplifier circuit that is formed using a CC configured transistor combination is called as
CC amplifier.
Construction
The common collector amplifier circuit using NPN transistor is as shown below, the input
signal being applied at base collector junction and the output signal being taken from emitter
collector junction.
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Operation
When no input is applied, the quiescent conditions are formed and no output is present. When
positive half of the signal is being applied, the forward bias is increased because Vbe is positive
with respect to collector or ground. With this, the base current IB and the collector current IC are
increased.
The following circuit diagram shows a CC amplifier with self-bias circuit.
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Consequently, the voltage drop across Re i.e. the output voltage is increased. As a result, positive half
cycle is obtained. As the input and output are in phase, there is no phase reversal.
If CC configuration is considered for amplification, though CC amplifier has better input impedance and
lower output impedance than CE amplifier, the voltage gain of CC is very less which limits its
applications to impedance matching only.
Differential Amplifier: (***)
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Operation of Differential Amplifier : (***)
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Unit1 Analysis of BJT Amplifiers

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UNIT-I ANALYSIS OF BJT AMPLIFIERS

Biasing Circuits for BJTs

i) To operate the BJT in active region so that it can be used as amplifier.

Important basic relationship:

1. Fixed Bias or Base Bias Circuit

B.E loop analysis:

Applying KVL to the CE loop

Load line Analysis of the Fixed bias circuit:

2. Emitter Bias or Self bias circuit:

4. Voltage divider bias or Universal bias

Stability of operating point:

SELECTION OF OPERATING POINT:

 Practically stability factor should have the value as minimum as possible.

EXPRESSION FOR STABILITY FACTOR S:

For a common emitter configuration collector current is given by

Factors affecting the operating point: (****)

 ICBO gets doubled (for every 10o rise)

Fig (a): Two port network

Circuit Performance in h Parameters:

H – parameters equivalent circuit for CE configuration: (***)

Vbe = input voltage

Vce = output voltage.

H-parameters for all three configurations

hie = h11e = input resistance in common emitter configuration.

hfb = h21b = short-circuit current gain in common base configuration.

Low Frequency BJT Amplifiers:

Differential Amplifier: (***)

Operation of Differential Amplifier : (***)

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