BI TP CU KIN IN T BI 16 TRANG 119. SCH BI GING: TNG T BAI 2 1, V BI 1 2.

BTK KHOA 1 HK3:

Cch 1: Ta c: in p ti cc B transistor: VB = Vcc 20 R2 = 5 = 0,95V R1 + R2 100 + 5

Vi transistor Germani co: VBE = 0, 2V Nn cng dong in tai cc E transistor la: IE = VB VBE 0,95 0, 2 = = 7,5mA RE 0,1

Tim cng dong in tai cc C transistor: IC 50 = IC = I E = 7,5 = 7,35mA IE 1+ 1+ 1 + 50 Tim cng dong in tai cc B transistor:

IC = I B IB = Tim in ap U CE :

I C 7,35 = = 0,147mA 50

U CE = Vcc (VC + VE ) = Vcc ( IC RC + IE RE ) U CE = 20 (7,35.2 + 7,5.0,1) = 4,55V Tim h s n inh S: RB RE S = (1 + ) R 1+ + B RE 1+ Vy: R1.R2 100.5 1+ ( R1 + R2 ).RE (100 + 5).0,1 S = (1 + ) = (1 + 50) = 25 R1.R2 100.5 1+ + 1 + 50 + ( R1 + R2 ).RE (100 + 5).0,1 1+ Cch 2: Ta c: VB = VBE + VE (1)

M:

RB =

R1.R2 R1 + R2

Trong : VE = RE .I E = RE ( I B + I C ) = RE ( I B + I B ) = I B RE (1 + ) V: Do : VB = I phn p .R2 VB = VCC .R2 R1 + R2 m: (2) I phn p = Vcc R1 + R2

T (1)

VCC .R2 = VBE + I B RE (1 + ) R1 + R2 VCC .R2 VBE R1 + R2 IB = RE (1 + )

Vy:

IC = I B

T (1) v (2) tm c: IE = VB VBE RE Trong ( bi cho): Transistor Gemani c : VBE = 0, 2V Transistor Silicon c : VBE = 0, 6V

Tim in ap U CE : U CE = Vcc (VC + VE ) = Vcc ( IC RC + IE RE ) U CE = Vcc IC RC IE RE Tim h s n inh S: S= 1+ .RE 1+ RE + RB Trong : RB = R1.R2 R1 + R2

Nhn xt: V dng bi cho tr s linh kin, tm I B , I C , I E , U CE , S ca mch transistor phn cc kiu cu phn p 1. Phn trn cch 2 l chng minh ( bit t u m c) cng thc. Ta c th thay s liu cho vo thng cng thc (mu vng) tm cc thng s lm vic ca mch. Cch ny thch hp cho thi trc nghim cn kt qu nhanh chn. 2. Cch 1 hay cch 2 u cho kt qu nh nhau, ng p n trong sch bi ging. Tuy nhin. Cng thc tm S hi di. Nn dng cng thc tnh S (mu vng) cch 2 gn hn. 3. Khi thay s vo cng thc ta khng cn quan tm n du tr (-) ca ngun in. Ch ly gi tr tuyt i. V d (-20V), ta ch thay 20V vo cng thc vn ng kt qu. Bi v, du ngun in l ty theo transistor loi PNP hoc NPN m phn cc cc mi ni P-N cho thch hp. Nu ta thay c du ngun in th kt qu ca I v V s c du (-), biu th s phn cc ca P-N trn mch transistor. Nhng iu ny khng cn thit y. Bng chng l p n trong sch vn khng c du tr (-). 4. Khi thay gi tr in tr v d 5K ( 5 K = 5000 = 5.103 ). Ta ch ghi s 5 thi m khng cn ghi 5.103 . V khi tnh ton 103 s b n gin ht. Tuy nhin, ta phi ghi tt c cng mt n v. V d: 0.1K phi ghi l 0,1 ch khng ghi 100 . V nh l kt qu ca I l mA. (Xem bi lm trn). 5. Nn dng my tnh khoa hc (Scientific Calculator) CASIO fx 570 ES tnh nhanh cc cng thc ton nh lu. (xem hnh)

BI 17 TRANG 119. SCH BI GING:

TNG T BAI 2 2. BTK KHOA 1 HK3:

Ta c: I E = I B + I C = I B + I B = I B (1 + ) V: VCC = RC ( I B + I C ) + RE .I E + VCE VCC = RC .I E + RE .I E + VCE VCC = I E ( RC + RE ) + VCE VCC = I B (1 + )( RC + RE ) + VCE IB = VCC VCE (1 + )( RC + RE ) (1)

IB = Tm tr s RB :

24 5 = 0, 04mA (1 + 45)(10 + 0, 27)

VCE = VBE + RB .I B RB = VCE VBE IB 5 0, 6 = 110 K 0, 04.103 (2)

RB =

Tm h s n nh S:

Theo nh lut kicSp ta c:

VCC = ( I B + IC ) RC + I B R + VBE + I E RE =( I B +IC ) RC +I B R + BE + I B +IC ) RE V ( ( R + RC + RE ) I B = VCC VBE ( RC +RE ) IC IB = VCC VBE ( RC + RE ) I C ( R + RC + RE )

V Vcc v VBE khng ph thuc vo IC v v IB nn tnh o hm IB theo IC ta c: RC RE (+ ) dI B = dI C R B R+ R E C + Theo cng thc tnh h s S ta c: 1 + = dI 1 ) B ( dI C +1 + = R RE + 1 + C RB + C+RE R 1 45 = + 1+ 45

S =

10 0,27 110 + + 10 0,27

9,5

Nhn xt: V dng bi tm RB , S ca mch transistor phn cc kiu hi tip. 1. Nh cc bn thy. lm c bi ny cn c 3 cng thc trn. Nhng trong sch bi ging ch c cng thc (3) tm S. Cn (1) v (2) th khng c. Bi ging trong sch ch dy l thuyt cho s n gin khng c RE . Do mnh chng minh v a ra cng thc tng qut cho trng hp transistor c RE . cc bn p dng cng thc (mu vng) lm cho nhanh khi thi trc nghim. Tht ra, sch dy l l thuyt chung hiu bi trn c s vn dng gii bi tp khc. Nhng chng ta hc t xa (ch c sch m thnhk s) khng c ai ging dy lm sao m hiu m lm. Con g khng c m qu trng cng khng c lun! 2. Ch khi thay gi tr in tr cng thc (1). Ta khng cn 3 ghi 10 , nn kt qu ca I phi l mA. Nhng khi thay vo cng thc (2). Ta phi ghi 103 (i ra Ampe).

BI 18 TRANG 119. SCH BI GING. GING 100% BAI 3 4. BTK KHOA 1 HK3:

Tm I B : I C = I B + ( + 1) I CBO IB = I C ( + 1) I CBO

1 (100 + 1)5.103 = = 4,95.103 A 100 I B = 4,95mA Tm I E : IC I (1 + ) = IE = C IE 1+ IE = Tm RB : VCC = VBE + I B RB + I E RE RB = RB = Tm S: VCC VBE I E RE IB 1(1 + 100) = 1, 01A 100

40 0, 2 1, 01.5 = 7020 7 K 4,95.103

S = + 1 = 100 + 1 = 101

BI 15 TRANG 118. SCH BI GING. GING 100% BAI 3 2. BTK KHOA 1 HK3:

15. Cho s nh hnh v: Cho bit 1 = 0,98 , 2 = 0,96 , VCC = 24V , RC = 120 , I E = 100mA , B qua dng in ngc bo ha ( I CBO = 0 ). Xc nh: a) Cc dng in I C1 , I B1 , I E1 , I C 2 , I B 2 b) U CE

Tm I C 2 : IC 2 = 2 I C 2 = 2 .I E2 = 0,96.100 = 96mA I E2 Tm I B 2 : IB2 = IC 2 I I (1 2 ) = C2 = C2 2 2 2 1 2 96(1 0,96) = 4mA 0,96

IB2 = Tm I C1 :

I C1 = 1 I C1 = 1.I E1 = 0,98.4 = 3,92mA I E1 Tm I B1 :

I C1 I (1 1 ) = 1 = 1 I B1 = C1 I B1 1 1 1 I B1 = Tm U CE : U CE = VCC I C .RC = VCC ( I C1 + I C 2 ).RC U CE = 24 (3,92 + 96).103.120 = 12V Tm IC : IB I C I C1 + I C 2 3,92 + 96 = = = 1249 IB I B1 0, 08 Tm IC : IE I C I C1 + I C 2 3,92 + 96 = = = 0,9992 IE I E2 100 3,92(1 0,98) = 0, 08mA 0,98

BI 15 TRANG 142. SCH BI GING. TNG T BAI 3 1. BTK KHOA 1 HK3:

Tm U GS : U I D = I DO 1 GS U GSngat
2

ID U GS = U GSngat 1 I DO

1 U GS = (2) 1 = 2 + 2 = 0,585V 0, 6V 2 Tm RS : U GS = I D .RS RS = U GS 0, 6 = 3 = 600 ID 10