INSTITUTE OF PHYSICS,

BHUBANESWAR

ION IMPLANTATION IN ZnO

AND ITS I-V
CHARACTERISTICS

Guided By: Dr. Satyaprakash Sahoo

Presented By: Harsh Raghuwanshi
NIT, Meghalaya
 What is ion implantation?
Ion implantation is a materials engineering process by which ions of a
material are accelerated in an electrical field and impacted into another
solid.
 WHY Zinc Oxide?

1. VLS fabrication
2. Growth temperature for high quality films
3. Simpler crystal-growth technology
4. Higher resistance to radiation induced damage of ZnO compared to GaN
TRANSPARENT CONDUCTING OXIDES
 The transparency is due to their optical band gaps, which is ≥3.3 eV, leading to
a transparency for wavelength >360 nm.

 ZnO has a exciton binding energy of 60 meV at room temperature (RT),

which is higher than one of GaN (24 meV), resulting in enhanced
luminescence efficiency and allows further operation of devices based on
excitonic transitions at RT and above (the thermal energy at room
temperature is about 25 meV).
 Typically used as electrodes when a situation calls for low resistance electrical
contacts without blocking light.

 They are an important component in a number of electronic devices

including liquid-crystal displays, OLEDs, touchscreens and photovoltaics.

 Other common examples of TCOs:

In2O3 & SnO2
PARTICLE ACCELERATOR
 ZnO film deposited on Si wafers by PLD.
 Ion Source: SNICS
 Dopant ions: Al3+ & Li+
 Samples prepared:
1. AZO, Dopant conc. : 1016/cm2 (n-type)
2. AZO, Dopant conc. : 5×1016/cm2 (n-type)
3. LZO, Dopant conc. : 1016/cm2 (p-type)
4. LZO, Dopant conc. : 5×1016/cm2 (p-type)
THERMAL EVAPORATION
 Thermal evaporation methods include the simple case of emission at the
heated source of the material which condenses on the cold substrate.
 A deposition chamber under high vacuum is necessary in order to avoid
oxidation of the source.
 Samples were cleaned using acetone and pressurized dry air.
 For probe contact, Ag layer was deposited at specific sections of the
sample using shadow mask.
TWO PROBE SETUP
 Deposited silver(Ag) act contacts for probe.
 Probe filament are made tungsten of thickness 35μm.
 I-V Characteristics for each sample in different
light conditions was studied.
 Index
I-V CHARACTERISTICS (D) : Dark conditions
(B) : Bright conditions
(L) : 1016/cm2 conc.
1.50E-03
Pure ZnO (H) : 5×1016/cm2 conc.

1.00E-03

5.00E-04
Current(A)

0.00E+00

ZnO (D)
ZnO (B)
-5.00E-04

-1.00E-03

-1.50E-03
-6.00E+00 -4.00E+00 -2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V)

 Symmetric, Non- linear V-I Curve

 RD=3.19×104 Ω, RB=8.92×103 Ω
 I-V CHARACTERISTICS Index
(D) : Dark
(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

4.00E-03 LZO, Conc. = 1016 4.00E-03 LZO, Conc. =5×1016

3.00E-03 3.00E-03

2.00E-03
2.00E-03
1.00E-03
1.00E-03
Current(A)

Current(A)
0.00E+00
0.00E+00
-1.00E-03 LZO (H) (D)
LZO (L) (D)
-1.00E-03 LZO (H) (B)
-2.00E-03 LZO (L) (B)

-3.00E-03 -2.00E-03

-4.00E-03 -3.00E-03

-5.00E-03 -4.00E-03
-6.00E+00-4.00E+00-2.00E+000.00E+002.00E+004.00E+006.00E+00 -6.00E+00-4.00E+00-2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V) Voltage(V)

 Symmetric, Non- linear V-I Curve

 Index

I-V CHARACTERISTICS (D) : Dark

(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

3.00E-03
LZO & ZnO, Conc. = 1016 5.00E-03
LZO
4.00E-03
2.00E-03
3.00E-03
1.00E-03
2.00E-03
Current(A)

0.00E+00 1.00E-03

Current(A)
0.00E+00
-1.00E-03 LZO (L) (D) LZO (L) (D)
ZnO (D) -1.00E-03 LZO (L) (B)
-2.00E-03 LZO (H) (D)
-2.00E-03
LZO (H) (B)
-3.00E-03 -3.00E-03

-4.00E-03
-4.00E-03
-6.00E+00
-4.00E+00
-2.00E+000.00E+002.00E+004.00E+006.00E+00 -5.00E-03
Voltage(V) -6.00E+00 -4.00E+00 -2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V)

 Increase in carrier concentration.

 Small change in slope with dopant concentration.
 Index

I-V CHARACTERISTICS
(D) : Dark
(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

AZO, Conc. = 1016 AZO, Conc. =5×1016

4.00E-02 1.50E-02

3.00E-02
1.00E-02
2.00E-02

5.00E-03
1.00E-02
Current(A)

Current(A)
0.00E+00 0.00E+00
AZO (L) (D) AZO (H) (D)
-1.00E-02 AZO (L) (B) AZO (H) (B)
-5.00E-03
-2.00E-02

-1.00E-02
-3.00E-02

-4.00E-02 -1.50E-02
-6.00E+00-4.00E+00-2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00 -6.00E+00 -4.00E+00 -2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V) Voltage(V)

 Al doped ZnO have very high electron density.

 Index
I-V CHARACTERISTICS (D) : Dark
(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

4.00E-02
AZO

3.00E-02

2.00E-02

1.00E-02
Current(A)

0.00E+00
AZO (H) (D)
AZO (H) (B)
-1.00E-02
AZO (L) (D)
-2.00E-02 AZO (L) (B)

-3.00E-02

-4.00E-02
-6.00E+00 -4.00E+00 -2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V)

 Native defects in ZnO leads to formation of Al2O3 .

 Index

I-V CHARACTERISTICS (D) : Dark

(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

4.00E-02
Conc. = 1016 1.50E-02
AZO & LZO, Conc. =5×1016

3.00E-02
1.00E-02
2.00E-02

5.00E-03
1.00E-02
Current(A)

Current(A)
0.00E+00 0.00E+00
LZO (L) (D) LZO (H) (D)
-1.00E-02 AZO (L) (D) LZO (H) (B)
-5.00E-03
ZnO (D) AZO (H) (D)
-2.00E-02
AZO (H) (B)
-1.00E-02
-3.00E-02

-4.00E-02
-1.50E-02
-6.00E+00-4.00E+00-2.00E+000.00E+002.00E+004.00E+006.00E+00
-6.00E+00-4.00E+00-2.00E+000.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V)
Voltage(V)

 Al doping leads to higher depreciation in resistivity than Li

doping ZnO.
 Index
(D) : Dark

I-V CHARACTERISTICS
(B) : Bright
(L) : 1016/cm2 conc.
(H) : 5×1016/cm2 conc.

1.00E-03
Junction, Conc. = 1016 2.00E-03 Junction, Conc. = 1016
1.00E-03

5.00E-04 0.00E+00

-1.00E-03

Current (A)
0.00E+00
-2.00E-03
Current (A)

JNC (L) (D)

-3.00E-03
-5.00E-04 JNC (L) (B)
JNC (L) (D) -4.00E-03

-1.00E-03 -5.00E-03

-6.00E-03
-1.50E-03 -6.00E+00-4.00E+00-2.00E+000.00E+002.00E+004.00E+006.00E+00
Voltage(V)

-2.00E-03
-6.00E+00 -4.00E+00 -2.00E+00 0.00E+00 2.00E+00 4.00E+00 6.00E+00
Voltage(V)

 Under this condition the sample behaves

as a Schottky diode.
CONCLUSION
 Al doped ZnO is better alternative than Li doped ZnO for optoelectronic
devices.
 Native defects and self compensation effects leads to difficulty in p-type
doping for ZnO.
 Decrement in resistivity of ZnO can be done only till certain Al doping
ratio.

FURTHER TASKS
 Study of band gap variation of AZO films.
 Optical properties of ZnO and AZO films.
 p-type doping of ZnO.
 Structural properties of LZO and ZnO.
 Piezoelectric properties of ZnO