Introduction To Microwave

KONKAN GYANPEETH COLLEGE OF ENGINEERING, KARJAT
Department of: Electronics and Telecommunication
Subject Name:_Microwave Engineering
Module No / Module Name: 01
Lecture No: 01
Faculty Name: Mrs. V.R.Keshwani
Konkan Gyanpeeth College of Engineering, Karjat

1
Syllabus
Konkan Gyanpeeth College of Engineering, Karjat Department: Electronics and telecommunication Engg 2
Konkan Gyanpeeth College of Engineering, Karjat 3
Introduction
Konkan Gyanpeeth College of Engineering, Karjat Department: Electronics and telecommunication Engg
5
Introduction
6
MICROWAVE BANDS
Department: Electronics and telecommunication Engg

MICROWAVE BANDS

MICROWAVE BANDS

Microwave Characteristics
• Electromagnetic waves which travel in free space with velocity of light .
• Size of the microwave component and circuits are within an
Order of magnitude of the operating wavelength hence field theory is
valid at microwaves and not circuit theory.
• Third important characteristic of microwave is skin effect, as skin effect
is function of frequency, depth of penetration decreases with increasing
frequency.
eg at 1000MHz,skin depth for copper is only few microns as a result,
microwaves current tends to flow along the surface of conductor.
Microwave Characteristics
• The fourth unique characteristics of microwaves is associated
with measurement techniques. most of the microwave
measurement involves the accurate measurement of
impedance and power, rather than V and I
ADVANTAGES OF MICROWAVES

continued

APPLICATIONS OF MICROWAVES

Lecture No: 02

18
Scattering Parameters
 At high frequencies, Z, Y, h & ABCD parameters are difficult (if not impossible) to
measure.
• V and I are not uniquely defined
• Even if defined, V and I are extremely difficult to measure (particularly I).
• Required open and short-circuit conditions are often difficult to achieve.
scattering (S) parameters are often the best representation for multi-port networks at high
frequency.

Two port network
S-parameters are defined assuming transmission lines are connected to each port.
a1 a2
Z 01 ,  1 1 2 Z 02 ,  2
b1 b2
z1 z2
On each transmission line:

V i  z i   V i 0 e   i z i  V i 0 e   i z i  V i   z i   V i   z i 
Incoming wave function  ai  zi   Vi  zi 

Vi 
 zi  Vi 
 zi  Z 0i
I i  zi   
Z 0i Z 0i Outgoing wave function  bi  zi   Vi  zi 

Z 0i

For a One-Port Network
L
 
V1 
0 Z 01
L
V 1 0 Z 01
a1
Z 01
b1

b1 0 l1
a1 0  b1  0    L a1  0 
 S11 a1  0 
 S 11
Incoming wave function  ai  zi   Vi   zi  Z 0i For a one-port network, S11
Outgoing wave function  bi  zi   Vi   zi  Z 0i is defined to be the same as
L.

For a Two-Port Network
a1 a2
Z 01 ,  1 1 2 Z 02 ,  2
b1 b2
z1 z2
b1  0   S 1 1 a 1  0   S 1 2 a 2  0 
b2  0   S 21a 1  0   S 22 a 2  0 
 b1  0    S 11 S 12   a1  0  
        b  S a
 b2  0    S 21 S 2 2  a2  0 

b1  0   S11a1  0   S12a2  0 
b2  0   S21a1  0   S 22a2  0 
input reflection coef.
b1  0
S11  w/ output matched
a1  0 
Output is matched
a2  0
reverse transmission coef.
b1  0  Input is matched w/ input matched
S12 
a2  0  a1 0
forward transmission coef.
b2  0 
Output is matched
w/ output matched
S21 
a1  0  a2  0 Input is matched output reflection coef.
b2  0  w/ input matched
S22 
a2  0  a1  0

Properties of the S Matrix
For reciprocal networks, the S-matrix is symmetric.

Note :
 S   S T
    
If A B  U
then
For lossless networks, the S-matrix is unitary.
 B   A   U 
  S T
 S   S  S  U 
* * T
Identity matrix
Notation:  S  †   S  H   S  T*
Equivalently,  S T*
  S
1
S  S 
† 1
so 
N N
(i, j) element   S S   Ski S  ij
N-port network T * *
Take ik kj kj 1 ; i  j
 ij  
k1 k1 0; i  j

Department: Electronics and telecommunication Engg 2

continued

Reciprocal network and lossless networks

Continued

Shift in Reference planes
continued

continued

continued

continued

continued
Konkan Gyanpeeth College of Engineering, KarjatDepartment: Electronics and telecommunication Engg 36
Problem

Lecture No: 03

41
Why matching or tuning is important?
• To maximize power delivery and minimize power loss.
• To improve signal to noise ratio as in sensitive receiver
components such as LNA, antenna, etc.
• To reduce amplitude and phase error as in distributed network
such as antenna array.
Z o
Matching
Load Z
Network L
Basic idea of impedance matching

Concept of maximum power transfer
In lump circuit
Z o
P L
V I ZL V L
i
Z o
Z L
2
1 1 2 1  Vi 
PL  VL I  I Z L    Z L
2 2 2  Z L  Zo 
Power maximum whence ZL = Zo

Factors in selecting matching network
• Complexity: simpler, cheaper, more reliable and low loss circuit is
preferred.
• Bandwidth: match over a desirable bandwidth.
• Implementation: depend on types of transmission line either cable, strip
line, micro stripline, waveguide, lump circuit etc.
• Adjustability:some network may need adjustment to match a variable
load.
Matching with lumped elements
The simplest matching network is an L-section using two reactive elements
jX
Configuration 1
Whence RL>Zo Z o jB Z L
ZL=RL+jXL
jX
Configuration 2
Whence RL<Zo Z o jB Z L
continue
If the load impedance (normalized) lies
in unity circle, configuration 1 is
used.Otherwise configuration 2 is used.
The reactive elements are either

inductors or capacitors. So there are 8
possibilities for matching circuit for
various load impedances. Configuration 2 Configuration 1
Matching by lumped elements are

possible for frequency below 1 GHz or for
higher frequency in integrated circuit(MIC,
MEM).
Impedances for serial lumped elements
Serial circuit
Reactance relationship values
+ve X=2pfL L=X/(2pf)

-ve X=1/(2pfC) C=1/(2pfX
L C
R R
Impedances for parallel lumped elements
Parallel circuit
Susceptance relationship values
+ve B=2pfC C=B/(2pf)

-ve B=1/(2pfL) L=1/(2pfB)
C
L R R
Matching by calculation for configuration 1
jX
Z o
jB Z L
For matching, the total impedance of L-section plus ZL should equal to Zo,thus
The impedance seen looking into the matching
1
Zo  jX  network, followed by the load impedance, must
jB  1 /  R L  jX L  be equal to Z0 for an impedance-matched
Rearranging and separating into real and imaginary parts gives us
B  XR L  X LZo   RL  Zo
*
X 1  BX L  BZ o RL  X L **
continue
Solving for X from simultaneous equations (*) and (**) and substitute X in (**) for B, we obtain
X L  RL / Zo R L2  X 2
L  ZoRL +ve capacitor
B  -ve inductor
R L2  X 2
L
Since RL>Zo, then argument of the second root is always positive, the series reactance can be found
as
1 X LZo Zo +ve inductor

X    -ve capacitor
B RL BR L
Note that two solution for B are possible either positive or negative
Matching by calculation for configuration 2
jX
Z o
jB Z L
For matching, the total impedance of L-section plus ZL should equal to 1/Zo,thus
The admittance seen looking
1 1
 jB  into the matching network, followed by the
Zo R L  j X  X L  load impedance, must be equal to 1/Z0 for
Rearranging and separating into real and imaginary parts gives us
oX L  
*
BZ  X Zo  RL
X  X L  BZ o RL **
continue
Solving for X and B from simultaneous equations (*) and (**) , we obtain
RL Z o  RL   X
+ve inductor
X   L -ve capacitor
Z o  RL  / RL +ve capacitor
B   -ve inductor
Zo
Since RL<Zo,the argument of the square roots are always positive, again two solution for X and B are
possible either positive or negative
Matching using Smith chart
parallel capacitance (+ve)

serial inductance
(+ve)
serial capacitance
parallel
(-ve) inductance
(-ve)
Serial Matching using lumped
L components
Parallel
C
Serial C C 2
L 2
10W 50W
C 1
L 1
Parallel
L
L 2
C 1
50  L 10 
C 2 !
Example
Design an L-section matching network to match a series RC load with an impedance ZL=200-j100
W, to a 100 W line, at a frequency of 500 MHz.
Solution
Normalized ZL we have :
ZL= 2-j1
Parallel L
(-j0.7)
Serial C
(-j1.2)
ZL= 2-j1
Parallel C
Serial L (+j0.3)
(j1.2)
Solution 1
Solution 2
continue
b 38.8nH
C   0 . 92 pF
2 f Z o 0.92pF 200-j100
x Zo
L   38 . 8 nH
2 f 2.61pF
1
C   2 . 61 pF 46.1nH ZL=200-j100
2  fx Z o
 Zo
L   46 . 1 nH
2 f b
r e f le c t io n c o e f f ic ie n t
Reflection coefficient
1.2
1
0.8
s olution 1
0.6
s olution 2
0.4
0.2
Solution 2 seems to be better matched 0

0 0.5 1 1.5
at higher frequency freq (GHz)
Single stub-matching
Parallel configuration x
short-stub
Short-stub matching Z L
Z o
open-stub
x
Z L
Z
Open-stub matching o
Example
Design two single–stub shunt tuning networks to match a load ZL=15+j10W to 50W at 2GHz. The load
consists of a resistor and inductor in series. Plot the reflection magnitude from 1 GHz to 3 GHz for each
solution.
Solution
•Normalized the load zL=0.3+j0.2
•Construct SWR circle and convert load to admittance
•Then move from load to generator to meet a circle (1+jb) to obtain two points i.e y1=1-j1.33 and
y2=1+j1.33.
•The distance d from the load to stub is obtained either of these two points i.e. d1= 0.044l and
d2=0.387l.
• To improve bandwidth, the stub is chosen as close as possible to the load.
•The tuning requires a stub of j1.33 for y1 and –j1.33 for y2.
•For open circuit-stub i1 =0.147l and i2=0.353l.
Smith Chart
Continue
0.147  0.353 
15  15 
50  50  50  50 
0.796nH 0.796nH
0.044  0.387 
Solution 1 Solution 2
Convert j0.2 to inductance value, thus
0 . 2  50
1
L   0 . 796 nH
r e fl. c o e ff.
0.8
9
2   2  10 0.6
0.4
Solution 1
Solution 2
0.2
Use this value to calculate reflection coefficient 0
ZL  Zo 1 1.5 2 2.5 3
  f (GHz)
ZL  Zo
Formulas for calculation
Let ZL=RL+jXL, then the impedance at distance d from the load is
Z L  jZ o tan  d ( R L  jX L )  jZ o tan  d
Z d  Z o  Zo
Z o  jZ L tan  d Z o  j ( R L  jX L ) tan  d
Admittance at this point is 1
Yd  G  jB 
Zd
Thus, by substituting Zd and separating real and imaginary, we have
G 

R L 1  tan 2
 d 
R L2   X L  Zo tan  d 2
R L 2 tan  d   Z o  X tan  d  X L  Z o tan  d 
 2 
L
B 
Z o R L2   X L  Z o tan  d
continue
Equating G = Yo = 1/Zo,and , thus we have t  tan  d
1

RL 1  t2  
Zo R L2   X L  Z o t  2
R L2   X L 
 Z ot 2  Z o R L 1  t 2  0 
Z o ( R L  Z o )t 2  2 X Z
L o t  ( R Z
L o  R 2
L  X
2
L )  0
Solving
t 
X L  
R L  Z o  R L 2  X 2
L / Z o
for R L  Z o
RL  Z o 
XL
t= for R L = Z o
2Z o
continue
1

RL 1  t2  
Zo R L2   X L  Z o t  2
R L2   X L 
 Z ot 2  Z o R L 1  t 2  0 
Z o ( R L  Z o )t 2  2 X Z
L o t  ( R Z
L o  R 2
L  X
2
L )  0
 / Z
Solving
X L  R L  Z o  R L 2  X 2
L o
t  for R L  Z o
RL  Z o 
 XL
t  for R L  Z o
2Zo
continue
1

RL 1  t2  
Zo R L2   X L  Z o t  2
R L2   X L 
 Z ot 2  Z o R L 1  t 2  0 
Z o ( R L  Z o )t 2  2 X Z
L o t  ( R Z
L o  R 2
L  X
2
L )  0
Solving
t 
X L  
R L  Z o  R L 2  X 2
L / Z o
for R L  Z o
RL  Z o 
 XL
t  for R L  Z o
2Zo
Example
Match a load impedance of ZL=100+j80 to a 50 W line using a single series open-stub.Assuming the
load consists of resistor and inductor in series at 2GHz. Plot the reflection coefficient from 1 GHz to 3
GHz.
Solution
•Normalized the load zL=2+j1.6

•Construct SWR circle
•Then move from load to generator to obtain two points on unity circle(1+jx) z1=1-j1.33 and z2=1+j1.33.
d2=0.463l.
•The tuning requires a stub of j1.33 for z1 and –j1.33 for z2.
Smith Chart
Continue
0.397  0.103 
0.120  0.463 
50  50 
100  100 
50  50  50 
50 
6.37nH 6.37nH
Convert j1.6 to inductance value, thus Reflection coefficient
1 . 6  50 1
L   6 . 37 nH
r e fl. c o e ff.
0.8
9
2   2  10 0.6 Solution 1
0.4 Solution 2
Use this value to calculate reflection coefficient 0.2
0
ZL  Zo 1 1.5 2 2.5 3
  f (GHz)
ZL  Zo
Let YL=GL+jBL, then the load admittance at distance d from the load is
Y L  jY o tan  d ( G L  jB L )  jY o t
Yd  Yo  Yo Where t = tan bd
Y o  jY L tan  d G o  j ( G L  jB L ) t
1
Impedance at this point is Zd  R  jX 
Yd
Thus, by substituting Yd and separating real and imaginary, we have
R 

GL 1 t2 
G L2   B L  Y o t  2
G L 2 t   Y o  B L t  B L  Y o t 
X 

Z o G L2   B L  Y o t  2 
continue
Equating R = Zo = 1/Yo , thus we have
1

GL 1 t2  
Yo G L2   B L  Y o t  2
G L2   B L  Y o t  2  Y o G L 1  t 2  0  
Y o ( G L  Y o ) t 2  2 B L Y o t  ( G L Y o  G L2  B L2 )  0
Solving
t =
B L ± G L
[( Y o GL) + B
2 2
L
]/ Y o
for G ≠ Yo
(G L
Yo ) L
 BL
t  for G L  Y o
2Yo
x
S1
admittance cannot be
matched B’
2
S
B
A= load admittance A
A’
A’=admittance of A at
stub 2
B= Adjust of stub S2 to
bring to the S2 circle
B’=Admittance of B at S1
Then by adjusting stub 1
will bring the admittance to the center of the
chart
x
continue
The two principle solution are
 1 1
d  tan t for t  0
  2
 
1
 2

  tan  1 t  for t  0
To find the stub length,
 1 X 1  
 tan   for short  stub
 2  Zo 
 1 1  Z o 
 tan   for open  stub
 2  X 
Double-stub matching
S 1
S 2
Open or short stubs
Z o Z L
d x
The advantage of this technique is the position of stubs

( d and x) are fixed. The matching are done by changing
the length of stubs. The disadvantage of this technique
is not all impedances can be matched.
continue
Rotated 1+jb circle
y1 /8
b1
y2’
yL
y1’ b1’ b2’
b2 y2
continue
Reflection Coefficient vs frequency
R e fle c tio n c o e ffic ie n t

1
0.8
0.6 Solution 1
0.4 Solution 2
0.2
0
1 1.5 2 2.5 3
Frequency(GHz)
The shorter the stubs the wider will be the bandwidth
Let YL=GL+jBL, then the load admittance at distance x from the load is
' Y L  jY o tan  x ' ' x is distance between stub and

Y L  Yo  G L  jB L load
Y o  jY L tan  x
Admittance at first stub 

Y1  G L'  j B L'  B 1 
After transforming to stub 2 , we have
'
G L  j ( B L'  B 1  Y o t )
Y2  Yo
 
Where t = tan bd
' '
Yo  j G L  jB L  jB 1 t

Example
Design a double-stub shunt tuner to match a load ZL=60-j80 to a 50 W line. The stubs are to be short
circuited stubs, and are spaced l /8 apart. The load consists of a series resistor and capacitor that
match at 2 GHz. Plot the reflection coefficient magnitude versus frequency from 1 GHz to 3GHz.
Solution
•Plot normalized load zL=1.2 –j 1.6 W and convert to admittance we have yL= 0.3 +j0.4.
•Construct a rotated 1+ j b circle which is a distance d=l/8 from a 1+jb circle. Get two possible
points on the rotated 1+jb circle, y1 and y1’ by adding susceptance of the first stubs. In this case
we take x=0(match section immediate after the load . I.e b1=1.314 and b1’=-0.114.The length of
stub will be i1=0.396l and i1’=0.232l.
•Now transform both point onto 1+jb circle along SWR circles.This bring two solution y2 =1-j3.38
and y2’=1+j1.38.
•Then the second stub should be b2= 3.38 and b2’=-1.38. The length of stub will be i2=0.454l
and i2’=0.100l.
Rotated 1+jb circle
continue
y1  /8
b1
y2’
yL
y1’ b1’ b2’
b2 y2
continue
Reflection Coefficient vs frequency
R e fle c tio n c o e ffic ie n t

1
0.9
0.8
0.7
0.6 Solution 1
0.5
0.4 Solution 2
0.3
0.2
0.1
0
1 1.5 2 2.5 3
Frequency(GHz)
The shorter the stubs the wider will be the bandwidth


Y1  G L'  j B L'  B 1 
'
G L  j ( B L'  B 1  Y o t )
Y2  Yo
 
Where t = tan bd
' '


Y1  G L'  j B L'  B 1 
'
G L  j ( B L'  B 1  Y o t )
Y2  Yo
 
Where t = tan bd
' '
continue
So susceptances of stubs are
B 1   B L '
Yo  1  t G2
L 'Yo  G ' 2 2
L t
t
and B2 
 Yo 1  t 
2 ' 2 2
G L 'Yo  G L t  G L 'Yo
G L 't
To find the stub length ,
 1 B 1  
 tan   for open  stub
 2  Yo 
 1 1  Y o 
 tan   for short  stub
 2  B 
BDepartment
either B: 1Electronics
or B2 and telecommunication Engg
continue
 1 1
  2
 
1
 2

  tan  1 t  for t  0
 1 X 1  
 2  Zo 
 1 1  Z o 
 2  X 
continue
 1 1
  2
 
1
 2

  tan  1 t  for t  0
 1 X 1  
 2  Zo 
 1 1  Z o 
 2  X 
Graphical method
Suitable for load impedance laying inside the unity circle.
• Plot ZL normalised to 50 ohm

•Find bisector and point intersect the chart axis (I.e A)
•Draw circle at center A touching the center of the chart
•Obtain R1 and calculated new characteristic impedance of the line
•Renormalised the ZL to ZT, thus we have ZL2 . Then plot on the chart.
•Obtain x for the length of the matching section by moving towards generator.
ZT  R1 Zo
Graphical method
Z L2
Z L
R A R
1 2
Unity circle
Lecture No: 04

99
Smith chart
Single-stub Matching in a Lossless Line
Shunt stub
In order to avoid complicated mathematics, graphical solutions using Smith chart
are widely used in the matching design.
when only load is connected, a voltage standing wave is formed in the line.
If we move away from the complex load towards the generator along the line, there are
voltage minima at which the reflection coefficient is a negative real quantity and the
input admittance is pure conductance of value Yin = (1 – G)/(1 + G)
= g = S, where S is the load VSWR.
there are voltage maxima at which the admittance is pure conductance of value
Yin = (1 + G)/(1 – G) = 1/S.
there must be a point at a certain distance d(say) towards the generator from the
first voltage minimum where the real part of the normalized admittance is unity, so
that yin = 1 ± jb.
The reactive component ±jb of this admittance can be cancelled by an equal and
opposite susceptance ∓jb of a short-circuited shunt stub of length l, located at that
point, and having characteristic impedance equal to that of the line, i.e. Z0.
The total normalized admittance of the terminated line and the stub looking towards
the load is then yt = 1 ± jb ∓ j cot bl = 1; so that cot bl = b
Serie stub
Konkan Gyanpeeth College of Engineering, Karjat Konkan Gyanpeeth College
Department of Engineering,
: Electronics Karjat
and telecommunication Engg 115
Example
Match a load impedance of ZL=100+j80 to a 50 W line using a single series open-stub.Assuming the
load consists of resistor and inductor in series at 2GHz. Plot the reflection coefficient from 1 GHz to 3
GHz.
Solution
•Normalized the load zL=2+j1.6

•Construct SWR circle
•Then move from load to generator to obtain two points on unity circle(1+jx) z1=1-j1.33 and z2=1+j1.33.
d2=0.463l.
•The tuning requires a stub of j1.33 for z1 and –j1.33 for z2.
Smith Chart
Konkan Gyanpeeth College of Engineering, Karjat Konkan Gyanpeeth College
Department of Engineering,
: Electronics Karjat
and telecommunication Engg 117
Continue
0.397  0.103 
0.120  0.463 
50  50 
100  100 
50  50  50 
50 
6.37nH 6.37nH
Convert j1.6 to inductance value, thus Reflection coefficient
1 . 6  50 1
L   6 . 37 nH
r e fl. c o e ff.
0.8
9
2   2  10 0.6 Solution 1
0.4 Solution 2
Use this value to calculate reflection coefficient 0.2
0
ZL  Zo 1 1.5 2 2.5 3
  f (GHz)
ZL  Zo
L-section matching network
EXAMPLE 5.1 L-SECTION IMPEDANCE MATCHING
Design an L-section matching network to match a series RC load with an impedance
ZL = 200 − j100 to a 100 line at a frequency of 500 MHz.
solution
The normalized load impedance is zL = 2 − j 1, which is plotted on the Smith chart of
Figure 5.3a.
This point is inside the 1 + j x circle, so we use the matching circuit of Figure 5.2a.
Because the first element from the load is a shunt susceptance, it makes sense to convert
to admittance by drawing the SWR circle through the load, and a straight line from the
load through the center of the chart, as shown in Figure 5.3a.
continue
b 38.8nH
C   0 . 92 pF
2 f Z o 0.92pF 200-j100
x Zo
L   38 . 8 nH
2 f 2.61pF
1
C   2 . 61 pF 46.1nH ZL=200-j100
2  fx Z o
 Zo
L   46 . 1 nH
2 f b
r e f le c t io n c o e f f ic ie n t
1.2
1
0.8
s olution 1
0.6
s olution 2
0.4
0.2
Solution 2 seems to be better matched 0

0 0.5 1 1.5
at higher frequency freq (GHz)
Lecture No: 05

124
How to read ZY chart


Introduction To Microwave

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Introduction To Microwave

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KONKAN GYANPEETH COLLEGE OF ENGINEERING, KARJAT

Department of: Electronics and Telecommunication

Subject Name:_Microwave Engineering

Module No / Module Name: 01

Konkan Gyanpeeth College of Engineering, Karjat

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department of: Electronics and Telecommunication

Subject Name:_Microwave Engineering

Module No / Module Name: 01

Konkan Gyanpeeth College of Engineering, Karjat

Department: Electronics and telecommunication Engg

On each transmission line:

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

For reciprocal networks, the S-matrix is symmetric.

Konkan Gyanpeeth College of Engineering, Karjat

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department: Electronics and telecommunication Engg

Department of: Electronics and Telecommunication

Subject Name:_Microwave Engineering

Module No / Module Name: 01

Konkan Gyanpeeth College of Engineering, Karjat

Basic idea of impedance matching

Power maximum whence ZL = Zo

The reactive elements are either

Matching by lumped elements are

Reactance relationship values

+ve X=2pfL L=X/(2pf)

Susceptance relationship values

+ve B=2pfC C=B/(2pf)

Rearranging and separating into real and imaginary parts gives us

1 X LZo Zo +ve inductor

Rearranging and separating into real and imaginary parts gives us

parallel capacitance (+ve)

Solution 2 seems to be better matched 0

at higher frequency freq (GHz)

•Normalized the load zL=2+j1.6

Convert j1.6 to inductance value, thus Reflection coefficient

To find the stub length,

Open or short stubs

The advantage of this technique is the position of stubs

R e fle c tio n c o e ffic ie n t

The shorter the stubs the wider will be the bandwidth

' Y L  jY o tan  x ' ' x is distance between stub and

Admittance at first stub 

Department: Electronics and telecommunication Engg

R e fle c tio n c o e ffic ie n t

The shorter the stubs the wider will be the bandwidth